BZT52C2V4S-BZT52C75S MIL-STD-202 BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52C4V7S - Datasheet Archive

 

200mW, 5% Tolerance SMD Zener Diode Small Signal Diode SOD-323F B Features C A Wide zener voltage range selection : 2.4V to 75V

 

BZT52C2V4S-BZT52C75S BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode SOD-323F B Features C A Wide zener voltage range selection : 2.4V to 75V VZ Tolerance Selection of ±5% D Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate E Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code F Unit (mm) Mechanical Data Unit (inch) Min Dimensions Max Min Max Case : Flat lead SOD-323 small outline plastic package A 1.15 1.35 0.045 0.053 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202 MIL-STD-202, Method 208 guaranteed B 2.30 2.70 0.091 0.106 C 0.25 0.40 0.010 0.016 High temperature soldering guaranteed: 260 °C/10s D 1.60 1.80 0.063 0.071 Polarity : Indicated by cathode band E 0.80 1.00 0.031 0.039 Weight : 4.02±0.5 mg F 0.05 0.20 0.002 0.008 Ordering Information Part No. Package Packing BZT52CxxS RR SOD-323F 3Kpcs/7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units PD Power Dissipation 200 mW Forward Voltage IF=10mA VF 1 V Thermal Resistance (Junction to Ambient) (Note 1) RJA 625 °C/W TJ, TSTG -65 to + 150 °C Junction and Storage Temperature Range Notes:1. Valid provided that electrodes are kept at ambient temperature Zener I vs. V Characteristics Current IF VZM VZ VBR VR IR IZK VF Voltage VBR Leakage Region Forward Region : Test current for voltage V Z VZ : Voltage at current I ZT ZZT BreakdownRegion : Dynamic impedance at I ZK IZT IZM : Test current for voltage V BR ZZK IZT : Voltage at I ZK IZK : Dynamic impedance at I ZT IZM : Maximum steady state current VZM : Voltage at I ZM Version : C09 BZT52C2V4S-BZT52C75S BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode Electrical Characteristics Ta = 25°C unless otherwise noted VF Forward Voltage = 1V Maximum @ IF = 10 mA for all part numbers VZ @ IZT (Volt) IZT(mA) ZZT @ IZT() Max IZK(mA) 2.52 5 100 1 564 45 2.84 5 100 1 564 18 1 3.0 3.15 5 100 1 564 9 1 3.14 3.3 3.47 5 95 1 564 4.5 1 BZT52C3V6S BZT52C3V6S 3.42 3.6 3.78 5 90 1 564 4.5 1 BZT52C3V9S BZT52C3V9S 3.71 3.9 4.10 5 90 1 564 2.7 1 BZT52C4V3S BZT52C4V3S 4.09 4.3 4.52 5 90 1 564 2.7 1 BZT52C4V7S BZT52C4V7S 4.47 4.7 4.94 5 80 1 470 2.7 2 BZT52C5V1S BZT52C5V1S 4.85 5.1 5.36 5 60 1 451 1.8 2 BZT52C5V6S BZT52C5V6S 5.32 5.6 5.88 5 40 1 376 0.9 2 BZT52C6V2S BZT52C6V2S 5.89 6.2 6.51 5 10 1 141 2.7 4 BZT52C6V8S BZT52C6V8S 6.46 6.8 7.14 5 15 1 75 1.8 4 BZT52C7V5S BZT52C7V5S 7.11 7.5 7.86 5 15 1 75 0.9 5 BZT52C8V2S BZT52C8V2S 7.79 8.2 8.61 5 15 1 75 0.63 5 BZT52C9V1S BZT52C9V1S 8.65 9.1 9.56 5 15 1 94 0.45 6 BZT52C10S BZT52C10S 9.50 10 10.50 5 20 1 141 0.18 7 BZT52C11S BZT52C11S 10.45 11 11.55 5 20 1 141 0.09 8 BZT52C12S BZT52C12S 11.40 12 12.60 5 25 1 141 0.09 8 BZT52C13S BZT52C13S 12.35 13 13.65 5 30 1 160 0.09 8 BZT52C15S BZT52C15S 14.25 15 15.75 5 30 1 188 0.045 10.5 BZT52C16S BZT52C16S 15.20 16 16.80 5 40 1 188 0.045 11.2 BZT52C18S BZT52C18S 17.10 18 18.90 5 45 1 212 0.045 12.6 BZT52C20S BZT52C20S 19.00 20 21.00 5 55 1 212 0.045 14.0 BZT52C22S BZT52C22S 20.90 22 23.10 5 55 1 235 0.045 15.4 Part Number Min Nom Max BZT52C2V4S BZT52C2V4S 2.28 2.4 BZT52C2V7S BZT52C2V7S 2.57 2.7 BZT52C3V0S BZT52C3V0S 2.85 BZT52C3V3S BZT52C3V3S ZZK @ IR @ VR( IZK() Max A) Max VR(V) 1 BZT52C24S BZT52C24S 22.80 24 25.20 5 70 1 235 0.045 16.8 BZT52C27S BZT52C27S 25.65 27 28.35 2 80 0.5 282 0.045 18.9 BZT52C30S BZT52C30S 28.50 30 31.50 2 80 0.5 282 0.045 21.0 BZT52C33S BZT52C33S 31.35 33 34.65 2 80 0.5 306 0.045 23.0 BZT52C36S BZT52C36S 34.20 36 37.80 2 90 0.5 329 0.045 25.2 BZT52C39S BZT52C39S 37.05 39 40.95 2 130 0.5 329 0.045 27.3 BZT52C43S BZT52C43S 40.85 43 45.15 2 150 0.5 353 0.045 30.1 BZT52C47S BZT52C47S 44.65 47 49.35 2 170 0.5 353 0.045 33.0 BZT52C51S BZT52C51S 48.45 51 53.55 2 180 0.5 376 0.045 35.7 BZT52C56S BZT52C56S 53.20 56 58.80 2 200 0.5 400 0.045 39.2 BZT52C62S BZT52C62S 58.90 62 65.10 2 215 0.5 423 0.045 43.4 BZT52C68S BZT52C68S 64.60 68 71.40 2 240 0.5 447 0.045 47.6 BZT52C75S BZT52C75S 71.25 75 78.75 2 255 0.5 470 0.045 52.5 Notes: 1. The Zener Voltage (V Z) is tested under pulse condition of 10ms. 2. The device numbers listed have a standard tolerance on the nominal zener voltage of ±5%. 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan semiconductor representative. 4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the DC zener current (I ZT or IZK) is superimposed to I ZT or IZK. Version : C09 BZT52C2V4S-BZT52C75S BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Zener Breakdown Characteristics FIG 1 Typical Forward Characteristics 100 Zener Current (mA) Forward Current (mA) 1000 100 Ta=25°C 10 Ta=25°C 10 1 0 0.1 1 0 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 1 2 3 Forward Voltage (V) 6 7 8 9 10 11 12 FIG 4 Admissible Power Disspation Curve FIG 3 Zener Breakdown Characteristics 300 Power Dissipation (mW) 10 Zener Current (mA) 5 Zener Voltage (V) 100 1 0 250 200 150 100 50 0 0 15 25 35 45 55 65 0 75 50 100 150 200 Ambient Tempeture (°C) Zener Voltage (V) FIG 5 Typical Capacitance FIG 6 Effect of Zener Voltage on Impedence 1000 1000 100 Dynamic Impedence () Capacitance(pF) 4 100 1V Bias Ta=150°C 10 Bias at 50% of VZ(Nom) Iz=1mA Ta=25°C Iz=5mA 10 Iz=20m 1 1 1 10 Zener Voltage (V) 100 1 10 100 Zener Voltage (V) Version : C09