BYX82 2002/95/EC 2002/96/EC MIL-STD-750 BYX83 BYX84 BYX85 BYX86 88/540/EEC - Datasheet Archive

 

Vishay Semiconductors Standard Avalanche Sinterglass Diode Features · · · · · · Glass

 

BYX82 BYX82 / 83 / 84 / 85 / 86 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features · · · · · · Glass passivated junction Hermetically sealed package e2 Low reverse current High surge current loading Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC 2002/95/EC and WEEE 2002/96/EC 2002/96/EC 949539 Applications Rectification, general purpose Mechanical Data Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 369 mg Case: SOD-57 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750 MIL-STD-750, Method 2026 Parts Table Part Type differentiation Package BYX82 BYX82 VR = 200 V; IFAV = 2 A SOD-57 BYX83 BYX83 VR = 400 V; IFAV = 2 A SOD-57 BYX84 BYX84 VR = 600 V; IFAV = 2 A SOD-57 BYX85 BYX85 VR = 800 V; IFAV = 2 A SOD-57 BYX86 BYX86 VR = 1000 V; IFAV = 2 A SOD-57 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Average forward current i2*t-rating Junction and storage temperature range Document Number 86052 Rev. 1.5, 14-Apr-05 Unit 200 V VR = VRRM 400 V VR = VRRM 600 V VR = VRRM 800 V VR = VRRM 1000 V IFSM 50 A IFRM Tamb 45 °C Value BYX86 BYX86 Repetitive peak forward current Symbol VR = VRRM BYX85 BYX85 tp = 10 ms, half sinewave Part BYX84 BYX84 Peak forward surge current Test condition see electrical characteristics BYX82 BYX82 BYX83 BYX83 Reverse voltage = Repetitive peak reverse voltage 10 A IFAV 2 A i2*t 8 A2*s Tj = Tstg - 55 to + 175 °C www.vishay.com 1 BYX82 BYX82 / 83 / 84 / 85 / 86 Vishay Semiconductors Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Symbol Value Unit l = 10 mm, TL = constant Test condition RthJA 45 K/W on PC board with spacing 25 mm Junction ambient RthJA 100 K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typ. Max Forward voltage Parameter IF = 1 A Test condition Symbol VF Min 0.9 1.0 Unit V Reverse current VR = VRRM IR 0.1 1 µA VR = VRRM, Tj = 100 °C IR 10 25 µA Diode capacitance VR = 4 V, f = 1 MHz CD 20 Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr 2 4 µs Reverse recovery charge IF = IR = 1 A, di/dt = 5 A/µs Qrr 3 6 µC pF 120 10 l l 100 IF ­ Forward Current (A ) RthJA ­Therm. Resist. Junction/ Ambient ( K/W) Typical Characteristics (Tamb = 25 °C unless otherwise specified) 80 TL= constant 60 40 Tj = 25°C 0.1 20 Scattering Limits 0 0.01 0 5 10 15 20 25 30 l ­ Lead Length ( mm ) 94 9572 0 RthJA 100 K/W V RRM VR BYX 82 40 0 BYX 84 BYX 83 BYX 85 2.4 3.0 24 18 12 6 BYX 86 1600 0 400 800 1200 Reverse / Repetitive Peak Reverse Voltage ( V ) Figure 2. Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage www.vishay.com CD ­ Diode Capacitance ( pF ) Tj ­ Junction Temperature ( °C ) RthJA 35 K/W 120 94 9579 1.8 30 RthJA 57 K/W 160 80 1.2 Figure 3. Forward Current vs. Forward Voltage 240 200 0.6 V F ­ Forward Voltage ( V ) 94 9573 Figure 1. Max. Thermal Resistance vs. Lead Length 2 Tj = 175°C 1 f = 1 MHz Tj = 25°C 0 0.1 94 9574 1 100 10 V R ­ Reverse Voltage ( V ) Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Document Number 86052 Rev. 1.5, 14-Apr-05 BYX82 BYX82 / 83 / 84 / 85 / 86 Zthp­Thermal Resistance for PulseCond.(K/W) Vishay Semiconductors 1000 V RRM 200 V RthJA 100 K/W 100 tp/T = 0.5 10 tp/T = 0.2 tp/T = 0.1 tp/T = 0.05 Tamb = 25°C Tamb =100 °C Tamb = 45 ° C Tamb = 125 °C 0.02 Tamb = 70°C Tamb = 150 °C 0.01 Single Pulse 1 10­3 10­2 10­1 100 101 10 0 tp ­ Pulse Length ( s ) 94 9575 101 102 I FRM ­ Repetitive Peak Forward Current ( A ) Zthp­ Thermal Resistance for PulseCond.(K/W) Figure 5. Thermal Response 1000 V RRM 1000 V t 10 µs RthJA 100 K/W 100 tp/T = 0.5 10 Tamb = 25°C Tamb = 45°C tp/T = 0.2 tp/T = 0.1 tp/T = 0.05 Tamb = 60°C Tamb = 70°C 0.02 Tamb =100°C 0.01 Single Pulse 1 10­3 10­2 10­1 100 101 10­1 tp ­ Pulse Length ( s ) 94 9578 100 101 I FRM ­ Repetitive Peak Forward Current ( A ) Zthp­ Thermal Resistance for Pulse Cond.(K/W) Figure 6. Thermal Response 1000 V RRM 200 V RthJA 57 K/W 100 Tamb = 25°C tp/T = 0.5 10 1 10­4 tp/T = 0.2 tp/T = 0.1 tp/T = 0.05 tp/T = 0.02 tp/T = 0.01 10­3 94 9577 Tamb = 70°C Tamb = 100°C Tamb = 125°C Tamb = 150°C Tamb = 45°C Single Pulse 10­2 10­1 100 100 tp ­ Pulse Length ( s ) 101 I FRM ­ Repetitive Peak Forward Current ( A ) Figure 7. Thermal Response Document Number 86052 Rev. 1.5, 14-Apr-05 www.vishay.com 3 BYX82 BYX82 / 83 / 84 / 85 / 86 Zthp­Thermal Resistance for Pulse Cond.(K/W) Vishay Semiconductors 1000 V RRM 1000 V t 10 µs RthJA 57 K/W 100 tp/T = 0.5 10 Tamb = 25 °C tp/T = 0.2 tp/T = 0.1 tp/T = 0.05 100°C Tamb = 45 °C 70°C tp/T = 0.02 tp/T = 0.01 1 ­4 10 10­3 Single Pulse 10­2 Tamb = 125°C 10­1 100 100 tp ­ Pulse Length ( s ) 94 9576 101 I FRM ­ Repetitive Peak Forward Current ( A ) Figure 8. Thermal Response Package Dimensions in mm (Inches) Sintered Glass Case SOD-57 3.6 (0.140)max. 94 9538 Cathode Identification ISO Method E 0.82 (0.032) max. 26(1.014) min. www.vishay.com 4 4.0 (0.156) max. 26(1.014) min. Document Number 86052 Rev. 1.5, 14-Apr-05 BYX82 BYX82 / 83 / 84 / 85 / 86 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC 88/540/EEC and 91/690/EEC 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 D-74025 Heilbronn, Germany Document Number 86052 Rev. 1.5, 14-Apr-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1