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BYG10GHE3/TR Vishay Semiconductors DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA, 2 PIN, Rectifier Diode visit Digikey Buy
BYG10G-E3/TR3 Vishay Semiconductors DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA, 2 PIN, Rectifier Diode visit Digikey Buy
BYG10GHE3/TR3 Vishay Semiconductors DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA, 2 PIN, Rectifier Diode visit Digikey Buy
BYG10G-E3/TR Vishay Semiconductors DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA, 2 PIN, Rectifier Diode visit Digikey Buy
BYG10G-M3/TR3 Vishay Semiconductors DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode visit Digikey Buy
BYG10GHM3/TR Vishay Semiconductors DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode visit Digikey Buy

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Part : BYG10G-E3/TR Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $0.0569 Price Each : $0.0649
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Part : BYG10G-M3/TR3 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $0.1149 Price Each : $0.1309
Part : BYG10GHE3/TR Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : 120,600 Best Price : - Price Each : -
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Part : BYG10G-E3/TR Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : 29 Best Price : $0.0430 Price Each : $0.0430
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Part : BYG10GHM3/TR3 Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : - Best Price : $0.1210 Price Each : $0.1230
Part : BYG10G-E3/TR Supplier : Vishay Intertechnology Manufacturer : Future Electronics Stock : 30,600 Best Price : $0.11 Price Each : $0.1170
Part : BYG10G-E3/TR3 Supplier : Vishay Intertechnology Manufacturer : Future Electronics Stock : - Best Price : $0.0590 Price Each : $0.0590
Part : BYG10G-E3/TR Supplier : Vishay Intertechnology Manufacturer : RS Components Stock : 300 Best Price : £0.1080 Price Each : £0.1970
Part : BYG10GHE3/TR Supplier : Vishay Intertechnology Manufacturer : RS Components Stock : 175 Best Price : £0.1180 Price Each : £0.1760
Part : BYG10GHE3TR3 Supplier : Vishay Intertechnology Manufacturer : ComSIT Stock : 1,885 Best Price : - Price Each : -
Part : BYG10G-E3/TR Supplier : Vishay Intertechnology Manufacturer : Chip1Stop Stock : 5,400 Best Price : $0.0947 Price Each : $0.1052
Part : BYG10G-E3/TR Supplier : Vishay Intertechnology Manufacturer : element14 Asia-Pacific Stock : 100 Best Price : $0.20 Price Each : $0.63
Part : BYG10G-E3/TR Supplier : Vishay Intertechnology Manufacturer : element14 Asia-Pacific Stock : 100 Best Price : $0.20 Price Each : $0.63
Part : BYG10G-E3/TR Supplier : Vishay Intertechnology Manufacturer : Farnell element14 Stock : - Best Price : £0.1080 Price Each : £0.1170
Part : BYG10G-E3/TR Supplier : Vishay Semiconductors Manufacturer : New Advantage Stock : 84,600 Best Price : $0.1290 Price Each : $0.1376
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BYG10G Datasheet

Part Manufacturer Description PDF Type
BYG10G Vishay Intertechnology Silicon Mesa SMD Rectifier Original
BYG10G Vishay Siliconix Diodes Original
BYG10G Vishay Telefunken Silicon Mesa SMD Rectifier Original
BYG10G-E3/TR Vishay DIODE STANDARD RECOVERY RECTIFIER 400V 1.5A 2DO-214AC T/R Original
BYG10G-E3/TR3 Vishay DIODE STANDARD RECOVERY RECTIFIER 400V 1.5A 2DO-214AC T/R Original
BYG10G/TR Vishay DIODE STANDARD RECOVERY RECTIFIER 400V 1.5A 2DO-214AC T/R Original
BYG10G/TR3 Vishay DIODE STANDARD RECOVERY RECTIFIER 400V 1.5A 2DO-214AC T/R Original

BYG10G

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ) IFSM ER TJ, TSTG SYMBOL BYG10D BYG10D 200 BYG10G BYG10G 400 BYG10J BYG10J 600 1.5 30 BYG10K BYG10K 800 , SYMBOL BYG10D VF BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT V Maximum at IF = 1 A instantaneous IF = 1.5 A , BYG10G BYG10J BYG10K 25 150 (1) 125 (2) 100 (3) BYG10M BYG10Y UNIT °C/W °C/W Note: (1) Mounted on Vishay Semiconductors
Original
J-STD-020C 2002/95/EC 2002/96/EC DO-214AC J-STD-002B JESD22-B102D
Abstract: BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y www.vishay.com Vishay General Semiconductor , °C unless otherwise noted) PARAMETER SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y BYG10D Device marking code BYG10G BYG10J BYG10K BYG10M BYG10Y 200 400 , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG10D, BYG10G, BYG10J, BYG10K , ) SYMBOL BYG10D BYG10G BYG10J IF = 1 A BYG10K BYG10M BYG10Y UNIT 1.1 TJ = 25 Vishay Intertechnology
Original
J-STD-020 AEC-Q101 J-STD-002 22-B102 2011/65/EU JS709A
Abstract: BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y www.vishay.com Vishay General Semiconductor , BYG10G BYG10J BYG10K BYG10M BYG10Y BYG10D Device marking code BYG10D BYG10G , ?91000 BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y www.vishay.com Vishay General Semiconductor , instantaneous forward voltage (1) SYMBOL BYG10D BYG10G BYG10J IF = 1 A BYG10K BYG10M , BYG10D BYG10G BYG10J BYG10K RJL 125 RJA (3) BYG10Y UNIT 150 RJA (2 Vishay Intertechnology
Original
Abstract: ) IFSM ER TJ, TSTG SYMBOL BYG10D BYG10D 200 BYG10G BYG10G 400 BYG10J BYG10J 600 1.5 30 BYG10K BYG10K 800 , TJ = 100 °C VF IR trr SYMBOL BYG10D BYG10G BYG10J BYG10K 1.1 1.15 1 10 4 V BYG10M BYG10Y UNIT A s , Al-oxide-ceramic (Al O ), 50 mm2 35 m Cu 2 3 (1) BYG10D BYG10G BYG10J 25 BYG10K BYG10M BYG10Y Vishay Semiconductors
Original
Abstract: TJ, TSTG SYMBOL BYG10D BYG10D 200 BYG10G BYG10G 400 BYG10J BYG10J 600 1.5 30 BYG10K BYG10K 800 BYG10M , TJ = 100 °C VF IR trr SYMBOL BYG10D BYG10G BYG10J BYG10K 1.1 1.15 1 10 4 V BYG10M BYG10Y UNIT A s , Al-oxide-ceramic (Al O ), 50 mm2 35 m Cu 2 3 (1) BYG10D BYG10G BYG10J 25 BYG10K BYG10M BYG10Y Vishay Semiconductors
Original

vishay MARKING UM SMA

Abstract: BYG10D RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BYG10G BYG10J BYG10K BYG10M BYG10Y BYG10D Device marking code BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y , TEST CONDITIONS SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT , ) PARAMETER SYMBOL Typical thermal resistance, junction to lead BYG10D BYG10G BYG10J RJL
Vishay Semiconductors
Original
vishay MARKING UM SMA BYG10D-BYG10M JESD 201 class 1A smd smd diode byg10K BYG10G TR

BYG10J

Abstract: BYG10D BYG10D 200 BYG10G BYG10G 400 BYG10J BYG10J 600 1.5 30 BYG10K BYG10K 800 BYG10M BYG10M 1000 BYG10Y , TJ = 100 °C SYMBOL VF BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT V 1.1 1.15 1 10 4 IR trr , ambient SYMBOL RJL RJA BYG10D BYG10G BYG10J 25 150 125 (2) 100 (3) (1) BYG10K BYG10M BYG10Y
Vishay Semiconductors
Original
JESD22-B102

BYG10M

Abstract: J-STD-002B noted) PARAMETER SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y BYG10D BYG10G , noted) PARAMETER TEST CONDITIONS SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y , otherwise noted) PARAMETER SYMBOL Typical thermal resistance - Junction lead BYG10D BYG10G
Vishay Semiconductors
Original

vishay MARKING UM SMA

Abstract: BYG10D otherwise noted) PARAMETER SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y 200 400 600 800 1000 1600 Device , noted) PARAMETER TEST CONDITIONS SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y , otherwise noted) PARAMETER SYMBOL Typical thermal resistance - Junction lead BYG10D BYG10G
Vishay Semiconductors
Original
smd code marking e3

vishay MARKING UM SMA

Abstract: BYG10D BYG10D 200 BYG10G BYG10G 400 BYG10J BYG10J 600 1.5 30 BYG10K BYG10K 800 BYG10M BYG10M 1000 BYG10Y , TJ = 100 °C SYMBOL VF BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT V 1.1 1.15 1 10 4 IR trr , ambient SYMBOL RJL RJA BYG10D BYG10G BYG10J 25 150 125 (2) 100 (3) (1) BYG10K BYG10M BYG10Y
Vishay Semiconductors
Original
Abstract: otherwise noted) PARAMETER SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y BYG10D Device marking code BYG10G BYG10J BYG10K BYG10M BYG10Y 200 400 600 800 1000 , forward voltage (1) SYMBOL BYG10D BYG10G BYG10J IF = 1 A BYG10K BYG10M BYG10Y , resistance, junction to lead BYG10D BYG10G BYG10J BYG10K RJL RJA (1) BYG10Y 125 Vishay General Semiconductor
Original
BYG10
Abstract: TJ, TSTG SYMBOL BYG10D BYG10D 200 BYG10G BYG10G 400 BYG10J BYG10J 600 1.5 30 BYG10K BYG10K 800 BYG10M , TJ = 100 °C VF IR trr SYMBOL BYG10D BYG10G BYG10J BYG10K 1.1 1.15 1 10 4 V BYG10M BYG10Y UNIT A s , Al-oxide-ceramic (Al O ), 50 mm2 35 m Cu 2 3 (1) BYG10D BYG10G BYG10J 25 BYG10K BYG10M BYG10Y Vishay Semiconductors
Original
Abstract: ) IFSM ER TJ, TSTG SYMBOL BYG10D BYG10D 200 BYG10G BYG10G 400 BYG10J BYG10J 600 1.5 30 BYG10K BYG10K 800 , TJ = 100 °C VF IR trr SYMBOL BYG10D BYG10G BYG10J BYG10K 1.1 1.15 1 10 4 V BYG10M BYG10Y UNIT A s , Al-oxide-ceramic (Al O ), 50 mm2 35 m Cu 2 3 (1) BYG10D BYG10G BYG10J 25 BYG10K BYG10M BYG10Y Vishay Semiconductors
Original

BYG10D

Abstract: BYG10D-BYG10M RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BYG10G BYG10J BYG10K BYG10M BYG10Y BYG10D Device marking code BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y , TEST CONDITIONS SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT , ) PARAMETER SYMBOL Typical thermal resistance, junction to lead BYG10D BYG10G BYG10J RJL
Vishay Semiconductors
Original
Abstract: otherwise noted) PARAMETER SYMBOL BYG10G BYG10J BYG10K BYG10M BYG10Y BYG10D Device marking code BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y 200 400 600 800 , SYMBOL BYG10D BYG10G BYG10J IF = 1 A IF = 1.5 A BYG10K BYG10M BYG10Y UNIT 1.1 , CHARACTERISTICS (TA = 25 °C unless otherwise noted) SYMBOL PARAMETER BYG10D BYG10G BYG10J BYG10K Vishay Intertechnology
Original
Abstract: the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BYG10G BYG10J BYG10K BYG10M BYG10Y BYG10D Device marking code BYG10D BYG10G BYG10J , ) SYMBOL BYG10D BYG10G BYG10J IF = 1 A BYG10K BYG10M BYG10Y UNIT 1.1 TJ = 25 , CHARACTERISTICS (TA = 25 °C unless otherwise noted) SYMBOL PARAMETER BYG10D BYG10G BYG10J BYG10K Vishay General Semiconductor
Original

diode rectifier DO-214AC

Abstract: 15811 @ IFAV = 1.5 A DO-214AC BYG10G VR = 400 V @ IFAV = 1.5 A DO-214AC BYG10J VR = 600 , Unit VR = VRRM 200 V BYG10G VR = VRRM 400 V BYG10J VR = VRRM 600 V
Vishay Semiconductors
Original
diode rectifier DO-214AC 15811 BYG10DBYG10M

BYG10DBYG10M

Abstract: BYG10 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features · · · · · Controlled avalanche characteristics Glass passivated junction Low reverse current High surge current capability Wave and reflow solderable DO-214AC (SMA) Applications Surface mounting General purpose rectifier Parts Table Part BYG10D BYG10G BYG10J BYG10K BYG10M Type differentiation VR = 200 V @ IFAV = , condition Part BYG10D BYG10G BYG10J BYG10K BYG10M Peak forward surge current Average forward current
Vishay Semiconductors
Original
125K/W
Abstract: VISHAY BYG10 Vishay Semiconductors Standard Avalanche SMD Rectifier Features · · · · · Controlled avalanche characteristics Glass passivated junction Low reverse current High surge current capability Wave and reflow solderable Applications Surface mounting General purpose rectifier 15 811 Order Information Part Number BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y Part Differentiation VR = 200 V , BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y Peak forward surge current Average forward current Junction and Vishay Semiconductors
Original

diode rectifier DO-214AC

Abstract: BYG10 @ IFAV = 1.5 A DO-214AC BYG10G VR = 400 V @ IFAV = 1.5 A DO-214AC BYG10J VR = 600 , Unit VR = VRRM 200 V BYG10G VR = VRRM 400 V BYG10J VR = VRRM 600 V
Vishay Semiconductors
Original
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