BYG10 BYG10D DO-214AC BYG10G BYG10J BYG10K BYG10M BYG10Y BYG10DBYG10M 125K/W - Datasheet Archive

 

VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features · · · · ·

 

BYG10 BYG10 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features · · · · · Controlled avalanche characteristics Glass passivated junction Low reverse current High surge current capability Wave and reflow solderable 15811 Applications Surface mounting General purpose rectifier Parts Table Part Type differentiation Package BYG10D BYG10D VR = 200 V @ IFAV = 1.5 A DO-214AC DO-214AC BYG10G BYG10G VR = 400 V @ IFAV = 1.5 A DO-214AC DO-214AC BYG10J BYG10J VR = 600 V @ IFAV = 1.5 A DO-214AC DO-214AC BYG10K BYG10K VR = 800 V @ IFAV = 1.5 A DO-214AC DO-214AC BYG10M BYG10M VR = 1000 V @ IFAV = 1.5 A DO-214AC DO-214AC BYG10Y BYG10Y VR = 1600 V @ IFAV = 1.5 A DO-214AC DO-214AC Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit VR = VRRM 200 V BYG10G BYG10G VR = VRRM 400 V BYG10J BYG10J VR = VRRM 600 V BYG10K BYG10K VR = VRRM 800 V BYG10M BYG10M VR = VRRM 1000 V BYG10Y BYG10Y Peak forward surge current Part BYG10D BYG10D VR = VRRM 1600 V IFSM 30 A IFAV 1.5 A Tj = Tstg Reverse voltage = Repetitive peak reverse voltage - 55 to + 150 °C ER 20 mJ tp = 10 ms, half sinewave Average forward current Junction and storage temperature range Pulse energy in avalanche mode, non repetitive (inductive load switch off) Document Number 86008 Rev. 1.5, 09-Oct-00 I(BR)R = 1 A, Tj = 25 °C BYG10DBYG10M BYG10DBYG10M www.vishay.com 1 BYG10 BYG10 VISHAY Vishay Semiconductors Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Symbol Value Unit Junction lead Parameter TL = const. Test condition Part RthJL 25 K/W Junction ambient mounted on epoxy-glass hard tissue RthJA 150 K/W mounted on epoxy-glass hard RthJA 125 K/W RthJA 100 K/W tissue, 50 mm2 35 µm Cu mounted on Al-oxid-ceramic (Al2O3), 50 mm2 35 µm Cu Electrical Characteristics Tamb = 25 °C, unless otherwise specified Max Unit Forward voltage Parameter IF = 1 A Test condition VF 1.1 V IF = 1.5 A VF 1.15 V Reverse current VR = VRRM IR 1 µA VR = VRRM, Tj = 100 °C IR 10 µA IF = 0.5 A, IR = 1 A, iR = 0.25 A trr 4 µs Reverse recovery time Part Symbol Min Typ. Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1.6 I FAV ­ Average Forward Current ( A ) 100.000 I F ­ Forward Current ( A) 10.000 Tj=150°C 1.000 0.100 Tj=25°C 0.010 0.001 VR=VRRM half sinewave RthJAv25K/W 1.2 1.0 0.8 0.6 0.4 RthJAv125K/W 0.2 RthJAv150K/W 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF ­ Forward Voltage ( V ) 16438 Figure 1. Forward Current vs. Forward Voltage www.vishay.com 2 1.4 0 16439 20 40 60 80 100 120 140 160 Tamb ­ Ambient Temperature ( °C ) Figure 2. Max. Average Forward Current vs. Ambient Temperature Document Number 86008 Rev. 1.5, 09-Oct-00 BYG10 BYG10 VISHAY Vishay Semiconductors 5000 t rr ­ Reverse Recovery Time ( ns ) 1000 IR ­ Reverse Current ( mA ) VR = VRRM 100 10 Tamb=125°C 4000 Tamb=100°C 3000 Tamb=75°C Tamb=50°C 2000 Tamb=25°C 1000 IR=0.5A, iR=0.125A 0 1 25 16440 50 75 100 125 Tj ­ Junction Temperature ( °C ) 0 150 0.2 0.6 Qrr ­ Reverse Recovery Charge ( nC ) PR ­ Reverse Power Dissipation ( mW ) VR = VRRM 350 300 PR­Limit @100%VR 250 200 150 PR­Limit @80%VR 100 50 1.0 Figure 6. Typ. Reverse Recovery Time vs. Forward Current 2000 400 0.8 IF ­ Forward Current ( A ) 94 9544 Figure 3. Reverse Current vs. Junction Temperature 0.4 Tamb=125°C Tamb=100°C 1600 Tamb=75°C 1200 Tamb=50°C Tamb=25°C 800 400 IR=0.5A, iR=0.125A 0 0 25 50 75 100 125 0 150 Tj ­ Junction Temperature ( °C ) 16441 94 9338 Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature 0.2 0.4 0.6 0.8 1.0 IF ­ Forward Current ( A ) Figure 7. Typ. Reverse Recovery Charge vs. Forward Current 30 CD ­ Diode Capacitance ( pF ) f=1MHz 25 20 15 10 5 0 0.1 16442 1.0 10.0 100.0 VR ­ Reverse Voltage ( V ) Figure 5. Diode Capacitance vs. Reverse Voltage Document Number 86008 Rev. 1.5, 09-Oct-00 www.vishay.com 3 BYG10 BYG10 VISHAY Zthp ­ Thermal Resistance for Pulse Cond. (K/W) Vishay Semiconductors 1000 125K/W 125K/W DC 100 tp/T=0.5 tp/T=0.2 10 tp/T=0.1 tp/T=0.05 tp/T=0.02 Single Pulse tp/T=0.01 1 10­5 10­4 10­3 10­2 10­1 100 101 102 tp ­ Pulse Length ( s ) 94 9339 Figure 8. Thermal Response Package Dimensions in mm 5.3 +0.2 / -0.4 4.4 +0.1 / -0.2 ISO Method E 0.2 2.15 ± 0.15 technical drawings according to DIN specifications 0.1 ± 0.07 1.5 +0.2 / -0.1 2.6 +0.2 / -0.3 3 +0.3 / -0.5 Plastic case JEDEC DO 214 similar to SMA Cathode indicated by a band 14275-1 www.vishay.com 4 Document Number 86008 Rev. 1.5, 09-Oct-00