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BYD33DGPHE3/54 Vishay Semiconductors DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode visit Digikey Buy
BYD33DGPHE3/73 Vishay Semiconductors DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode visit Digikey Buy

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BYD33D Datasheet

Part Manufacturer Description PDF Type
BYD33D Changzhou Galaxy Electrical Rectifier Diode, Fast Recovery Rectifier, Single, 200V, DO-15, 2-Pin Original
BYD33D EIC Semiconductor Avalanche Fast Recovery Rectifier Diodes Original
BYD33D Philips Semiconductors Fast soft-recovery controlled avalanche rectifiers Original
BYD33D Philips Semiconductors Fast Soft-Recovery Controlled Avalanche Rectifier Original
BYD33D Philips Semiconductors Very Fast Soft Recovery Avalanche Rectifier Diodes Original
BYD33D N/A Cross Reference Datasheet Scan
BYD33D N/A Shortform Data and Cross References (Misc Datasheets) Scan
BYD33D Philips Semiconductors AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Scan
BYD33D Philips Semiconductors Fast soft-recovery controlled avalanche rectifiers Scan
BYD33D-A52R Philips Semiconductors Fast soft-recovery controlled avalanche rectifiers Original
BYD33DGP-E3/54 Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE GEN PURP 200V 1A DO204AL Original
BYD33DGP-E3/73 Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE GEN PURP 200V 1A DO204AL Original
BYD33DGPHE3/54 Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE GEN PURP 200V 1A DO204AL Original
BYD33DGPHE3/73 Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE GEN PURP 200V 1A DO204AL Original
BYD33DT/R N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan

BYD33D

Catalog Datasheet MFG & Type PDF Document Tags

BYD33

Abstract: DIODE BYD33D repetitive peak reverse voltage BYD33D - 200 V BYD33G - 400 V BYD33J - 600 , - 1400 V - 200 V continuous reverse voltage BYD33D BYD33G - 400 V , 1.26 A - 0.70 A - 0.67 A BYD33D to M - 12 A BYD33U and V - 11 A BYD33D to M BYD33U and V IF(AV) average forward current BYD33D to M BYD33U and V IFRM , = 65 °C; see Figs 8 and 9 BYD33D to M - 7 A BYD33U and V - 6 A - 20
Philips Semiconductors
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BYD33 BYD33K BYD33V BYD33M DIODE BYD33D EQUIVALENT BYD33D M3D119 MAM123

BYD33

Abstract: BYD33G . MAX. UNIT repetitive peak reverse voltage BYD33D - 200 V BYD33G - 400 V , - 1400 V BYD33D - 200 V BYD33G VR - BYD33M - 400 V , 11 - 0.70 A - 0.67 A BYD33D to M - 12 A BYD33U and V IF(AV) - BYD33V - 11 A average forward current BYD33D to M BYD33U and V IF(AV) average forward current BYD33D to M BYD33U and V IFRM repetitive peak forward current 1996 Sep 18 Ttp = 55
Philips Semiconductors
Original
MBC051

BYD33

Abstract: EQUIVALENT BYD33D VRRM PARAMETER CONDITIONS MIN. MAX. UNIT repetitive peak reverse voltage BYD33D - , reverse voltage BYD33D BYD33G 400 V - 600 V BYD33K - 800 V BYD33M - , period; see also Figs 10 and 11 - 0.70 A - 0.67 A BYD33D to M - 12 A BYD33U and V IF(AV) - BYD33J - 11 A average forward current BYD33D to M BYD33U and V IF(AV) average forward current BYD33D to M BYD33U and V IFRM 1996 Jun 05
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Original
BYD33 Series PHILIPS BYD33

EQUIVALENT BYD33D

Abstract: 1n5062 equivalent -400 1P643 FAGOR BYD33D FE2G DIOTEC BYV27-400 1P644 FAGOR BYD33D FE2H DIOTEC , BYW56 FES1G FAGOR BYG80G RGP10MT FAGOR BYD33M FF1001 FAGOR BYD33D RGP15MT FAGOR BYV96E FF1002 FAGOR BYD33D RGP30MT FAGOR BYW96E FF1003 FAGOR BYD33D , -02 FUJI BYD33D ERA17-04 FUJI 1N4004ID ERB44-04 FUJI BYD33G ERA18-02 FUJI BYD33D ERB44-06 FUJI BYD33J ERA18-04 FUJI BYD33G ERB44-08 FUJI BYD33M ERA22
Philips Semiconductors
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BYD73D CTB34M 1n5062 equivalent SUF5402 diode cross reference BYS21-45 1N4007 general instruments BYS21-45 BY255 itt PBYR3045WT BYD73G SB1035 PBYR1040

BYD33D

Abstract: BYD33M BYD33D 200 V BYD33G 400 V BYD33J 600 V BYD33K 800 V BYD33M 1000 V BYD33U 1200 V BYD33V 1400 V Vr continuous reverse voltage BYD33D 200 V BYD33G 400 V BYD33J 600 V BYD33K 800 V BYD33M 1000 V BYD33U 1200 V BYD33V 1400 V If(AV) average forward current BYD33D to M 1.3 A BYD33U and V 1.26 A Ifsm non-repetitive peak forward current 20 A Ersm non-repetitive peak reverse avalanche energy BYD33D to J 10 mJ BYD33K to V 7 mJ trr reverse recovery time BYD33D to J 250 ns BYD33Kand M 300 ns BYD33U and V 500 ns
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OCR Scan
DIODES BYD33d DIODES BYD33G ScansUX62 marking w60 AOU474 711QA2

byd33

Abstract: BYD33V SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vrrm repetitive peak reverse voltage BYD33D - 200 V , 1400 V Vr continuous reverse voltage BYD33D - 200 V BYD33G - 400 V BYD33J - 600 V , BYD33D to M BYD33U and V Ttp = 55 °C; lead length = 10 mm; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 - 1.30 1.26 A A ìf(av) average forward current BYD33D to M BYD33U and V , BYD33D to M - 12 A BYD33U and V - 11 A 1996 Sep 18 2 â  7110fl2b OlOûbbO =ìb7 â  This Material
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OCR Scan

BYD33J

Abstract: DIODE BYD33D peak reverse voltage BYD33D BYD33G BYD33J BYD33K BYD33M BYD33U BYD33V Vr continuous reverse voltage BYD33D BYD33G BYD33J BYD33K BYD33M BYD33U BYD33V average forward current BYD33D to M BYD33U and V !f s m , non-repetitive peak reverse avalanche energy BYD33D to J BYD33K to V reverse recovery time BYD33D to J BYD33K and
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OCR Scan
SOD-81

B4U marking

Abstract: BYD33D N AUER PHILIPS/DISCRETE b"ìE D â  bbS3«ì31 Q02bS73 TTE MAPX BYD33D;G;J ;K;M I AVALANCHE , transient energy (e.g. during flashover in a picture tube). quick reference data BYD33D g j k m , BYD33D;G;J;K;M b , . max. BYD33D G J K M 200 400 600 800 1000 200 400 600 800 1000 Rth j-tp 1,3 0,7 12 7 20 10 1,3 , diodes blE D â  bhSBTBl ÃDEbS7S Ã75 HAPX BYD33D;G;J;K;M A CHARACTERISTICS Ti = 25 °C unless
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OCR Scan
B4U marking 600-1000V philips dl 701 S3T31 YD33D S3131
Abstract: bbS3T31 Q02bS73 TT2 » A P X bTE B N AUER PHILIPS/DISCRETE BYD33D;G;J;K;M AVALANCHE , reverse transient energy (e.g. during flashover in a picture tube). QUICK REFERENCE DATA BYD33D G , /DISCRETE bRE D b b S B ' m 002bS7M â  APX BYD33D;G;J;K;M RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) BYD33D G J K Repetitive peak reverse , rectifier diodes BYD33D;G;J;K;M CHARACTERISTICS Tj = 25 °C unless otherwise specified BYD33D G -
OCR Scan
7Z82241

sod 81

Abstract: sod81 b3E D â  1^53^24 0G7H333 Dlb «SIC3 NAPC/PHILIPS SEMICOMA BYD33D;G;J;K;M FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SCOT OR DATASHEET AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Rectifier diodes in hermetically sealed axial-leaded ID* envelopes. They are intended for television and industrial applications, such as switched-mode power supplies, scan rectifiers in TV receivers and also for , QUICK REFERENCE DATA BYD33D G J K M Repetitive peak reverse voltage VRRM max. 200 400 600 800 1000
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OCR Scan
sod 81 sod81 rectifier handbook PICTURE TUBE

DIODES BYD

Abstract: byd33v SIYU R BYD33D . BYD33V Fast Recovery Rectifier Reverse Voltage 200 to 1400 V Forward Current 1.26 to 1.3 A DO-15 Features 1.0(25.4) MIN .034(0.9) DIA .028(0.7) . Low reverse leakage . High forward surge capability . High temperature soldering guaranteed: .300(7.6) .230(5.8) 250°C/10 seconds, 0.375" (9.5mm) lead length, .140(3.6) 5 lbs. (2.3kg) tension DIA 1.0(25.4 , from 150 250 350 UNITS nS DACHANG ELECTRONICS SIYU R BYD33D . BYD33V
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Original
DIODES BYD 50 33g on

BYD33G

Abstract: BYD33D BYD33D THRU BYD33M SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE200 TO 1000V CURRENT: 1.0A FEATURE High temperature metallurgic ally bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500 High temperature soldering guaranteed 350°C /10sec/0.375"lead length at 5 lbs tension Operate at Ta =55°C with no thermal run away Typical , Mounted Rev.4, 1-Jul-03 www.gulfsemi.com RATINGS AND CHARACTERISTIC CURVES BYD33D THRU BYD33M 1
Gulf Semi
Original
DO-41 DO-204AL UL-94

BYD33M

Abstract: BYD33D BL GALAXY ELECTRICAL BYD33D(Z)-BYD33M(Z) VOLTAGE RANGE: 200 - 1000 V CURRENT: 1.3 A FAST RECOVERY RECTIFIERS FEATURES DO - 15 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Is opropanol and s im ilar s olvents MECHANICAL DATA Cas e:JEDEC DO-15,m olded plas tic Term inals : Axial lead ,s olderable per , . Document Number 0261040 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES BYD33D(Z
BL Galaxy Electrical
Original
DO--15 STD-202 50VDC

DIODES BYD 33g

Abstract: DIODES BYD BYD33D - BYD33M AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES PRV : 200 - 1000 Volts Io : 1.3 Amperes DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.166 , RATING AND CHARACTERISTIC CURVES ( BYD33D - BYD33M ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC IF
EIC Semiconductor
Original
DIODES BYD 33g DIODES 33D DIODES BYD 33j UL94V-O MIL-STD-202

DIODES BYD

Abstract: BYD33D - BYD33M AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES PRV : 200 - 1000 Volts Io : 1.3 Amperes DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA , CHARACTERISTIC CURVES ( BYD33D - BYD33M ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC IF dIF/dt Trr t
EIC Semiconductor
Original
Abstract: BYD33D THRU BYD33M SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE200 TO 1000V CURRENT: 1.0A FEATURE DO-41\DO-204AL High temperature metallurgic ally bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500 High temperature soldering guaranteed 350°C /10sec/0.375â'lead length at 5 lbs tension Operate at Ta =55°C , RATINGS AND CHARACTERISTIC CURVES BYD33D THRU BYD33M 1 1 Rev.4 www.gulfsemi.com Gulf Semi Gulf Semi
Original

DIODES BYD

Abstract: BYD33M BL GALAXY ELECTRICAL BYD33D(Z)-BYD33M(Z) VOLTAGE RANGE: 200 - 1000 V CURRENT: 1.3 A FAST RECOVERY RECTIFIERS FEATURES DO - 15 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Is opropanol and s im ilar s olvents MECHANICAL DATA Cas e:JEDEC DO-15,m olded plas tic Term inals : Axial lead ,s olderable per , BYD33D(Z)-BYD33M(Z) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM trr
BL Galaxy Electrical
Original
BYD33DZ

tda8841s1

Abstract: TDA8846s1 6415 3436 2411 14" E -13V BYD33D 1N4148 21" USA 2 3411 BYD33D 6403 , Drum 22uH Jumper NA NA NA NA 5 C 3417 BYD33D 4 3421 14" VlotAux13V L5 , -62 BYD33D 6 BYD33D -0V2 12K 6402 10 L2 3404 ABLinfo 2415 100u L3 , AT2078 1 56u MainAux +160 VH 5404 3R9 3414 1 2420 47u 9424 BYD33D , -64 100u 2466 100n 2463 BYD33D F1 3461 2464 Vlot8V 1M V_P2 B 6460 A
Philips Electronics
Original
tda8841s1 TDA8846s1 TDA8844 tda8844 S1 tda8842S1 flyback at2078 14PT314A/78 14PT316A/78 14PT414A/78 14PT616A/78 20PT324A/78 20PT326A/78

400v 20A ultra fast recovery diode

Abstract: 400v 50A DIODE BYD43-20 BYV98 BYD33D G J K M BYD37D G J K M Package Outline Repetitive Peak Reverse Voltage ^R R
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OCR Scan
BYV72E-100 BYV54V-50 400v 20A ultra fast recovery diode 400v 50A DIODE BYV54V50 power Diode 200V 10A BYV44-300 BYV74-300 S0T-227B2 BYD31D

BYM26D

Abstract: byd43v Philips Semiconductors Concise Catalogue 1996 Medium-power rectifiers SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS DATA: PAGES 65-66 surface-mount SOD64 2.3 A 3.0 A BYW95A BYM36A SOD87 1.5 A BYD37D _ FAST SOFT-RECOVERY CONTROLLED-AVALANCHE RECTIFIERS OVERVIEW leaded VR (V) 200 SOD91 0.5 A BYD31D SOD81 1.3 A BYD33D SOD57 1.5 A BYV95A BYV36A BYV26A1* SOD106 1.5 A BYG60D _ < V(AV)max. _ - BYM26A BYD57D1* BYG70D,) 400 BYD31G BYD33G BYV95B BYV36B
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OCR Scan
BYV95C BYV96D BYM26D BYW96D BYV97G BYM36G byd43v byv26 BYV36E AND BYV96E BVV36A BYV26B BYM26B BYW95B BYM36B BYD37G BYG60G

ELECTRONIC BALLAST 18W SCHEMATIC

Abstract: discrete 2x40w ballast an96004 driven by a discrete driver circuit, consisting of BYD33D diodes and a small driver transformer with a , capacitor. The driver circuit consists of some BYD33D diodes and a small driver transformer with a Multihole , SEMICONDUCTORS: D1,2,3,4 BYW54 D5,10 BYD33J D6,7,8,11,12,13 BYD33D D9 BYD31J D14 BR100-03 TR1,2 BUW85
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ELECTRONIC BALLAST 18W SCHEMATIC discrete 2x40w ballast an96004 philips electronic ballast 18W resonant half bridge ballast schematic an96004 half bridge self oscillating transformer 1X18W AN96104 PR37692 BUX85 CE254 MHB2-13/8/6-3C85

flyback transformer philips TV EHT AT2097

Abstract: TDA8447 1k R66 10E NFR25 R42 15E BYD33D 4E7 NFR25 22E NFR25 D9 R65 10E NFR25 , R163 D135 BYD33D T113 MPSA44 BZX79 C75 185V 500V C112 2n7 1k R132 D113
Philips Semiconductors
Original
flyback transformer philips TV EHT AT2097 TDA8447 TU305B2 AT2097 TRANSISTOR D405 flyback transformer philips AT2097 CCM420 AN97032
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