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BYC10-600 Datasheet

Part Manufacturer Description PDF Type
BYC10-600 NXP Semiconductors Understanding PFC - SMPS applications; Bipolar power diodes for Switch Mode Power Supplies Original
BYC10-600 NXP Semiconductors Understanding PFC - Lighting applications; Bipolar power diodes and transistors for electronic ballast Original
BYC10-600 NXP Semiconductors BYC10-600 - DIODE 10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC, Rectifier Diode Original
BYC10-600 Philips Semiconductors Rectifier diode ultrafast, low switching loss Original
BYC10-600 Philips Semiconductors Rectifier diode ultrafast, low switching loss Original
BYC10-600,127 NXP Semiconductors Rectifier diode ultrafast, low switching loss - @ I<sub>F</sub>: 10 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 10 A; Single/dual: SINGLE ; t<sub>rr</sub>: 19 ns; V<sub>F</sub>: 1.8 V; V<sub>RRM</sub>: 600 V; Package: week 1, 2005 Original
BYC10-600,127 NXP Semiconductors BYC10-600 - DIODE 10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC, Rectifier Diode Original
BYC10-600CT NXP Semiconductors Understanding PFC - SMPS applications; Bipolar power diodes for Switch Mode Power Supplies Original
BYC10-600CT NXP Semiconductors Understanding PFC - Lighting applications; Bipolar power diodes and transistors for electronic ballast Original
BYC10-600CT NXP Semiconductors BYC10-600 - DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB, TO-220AB, 3 PIN, Rectifier Diode Original
BYC10-600CT Philips Semiconductors Rectifier diode ultrafast, low switching loss Original
BYC10-600CT Philips Semiconductors Rectifier diode ultrafast, low switching loss Original
BYC10-600CT,127 NXP Semiconductors Rectifier diode ultrafast, low switching loss; Package: week 1, 2005 Original
BYC10-600CT,127 NXP Semiconductors BYC10-600 - DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB, TO-220AB, 3 PIN, Rectifier Diode Original

BYC10-600

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: switching losses in associated MOSFET BYC10-600 SYMBOL QUICK REFERENCE DATA VR = 600 V VF 1.8 V , Half-bridge lighting ballasts · Half-bridge/ full-bridge switched mode power supplies. The BYC10-600 is , BYC10-600 MAX. 1.8 2.3 2.9 200 3.0 55 40 7.5 12 11 UNIT V V V µA mA ns ns ns A A V IL Vin 150 , Rectifier diode ultrafast, low switching loss BYC10-600 30 25 20 Forward dissipation, PF (W) Vo = 1.3 V Rs = 0.05 Ohms BYC10-600 Tmb(max) C D = 1.0 90 100 110 120 ID dIF/dt Irrm 0.5 Philips Semiconductors
Original
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600 Rectifier diode ultrafast, low switching loss , thermal resistance · Reduces switching losses in associated MOSFET BYC10-600 SYMBOL QUICK , supplies. The BYC10-600 is supplied in the SOD59 (TO220AC) conventional leaded package. PINNING PIN 1 2 , 35 19 32 3 9.5 8 BYC10-600 MAX. 1.8 2.3 2.9 200 3.0 55 40 7.5 12 11 UNIT V V V A mA ns ns ns , specification Rectifier diode ultrafast, low switching loss BYC10-600 30 25 20 Forward dissipation NXP Semiconductors
Original
Abstract: FEATURES BYC10-600 SYMBOL · Extremely fast switching · Low reverse recovery current · Low , . PINNING PIN SOD59 (TO220AC) DESCRIPTION cathode 2 The BYC10-600 is supplied in the SOD59 , Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC10-600 , , low switching loss 30 BYC10-600 Forward dissipation, PF (W) Tmb(max) C 90 dIF/dt 100 0.5 Irrm ID D = 1.0 Vo = 1.3 V Rs = 0.05 Ohms 25 BYC10-600 ID = IL 110 Philips Semiconductors
Original
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600 Rectifier diode ultrafast, low switching loss , ultrafast, low switching loss FEATURES BYC10-600 SYMBOL â'¢ Extremely fast switching â'¢ Low , 2 The BYC10-600 is supplied in the SOD59 (TO220AC) conventional leaded package. 1 anode , specification Rectifier diode ultrafast, low switching loss BYC10-600 ELECTRICAL CHARACTERISTICS Tj = , BYC10-600 Forward dissipation, PF (W) Tmb(max) C 90 dIF/dt 100 0.5 Irrm ID D NXP Semiconductors
Original

BYC10-600

Abstract: BYV79E FEATURES BYC10-600 SYMBOL · Extremely fast switching · Low reverse recovery current · Low , . PINNING PIN SOD59 (TO220AC) DESCRIPTION tab cathode 2 The BYC10-600 is supplied in the , Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC10-600 , BYC10-600 Forward dissipation, PF (W) Tmb(max) C 90 dIF/dt 100 0.5 Irrm ID D = 1.0 Vo = 1.3 V Rs = 0.05 Ohms 25 BYC10-600 ID = IL 110 120 20 0.2 losses
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BYV79E

BYC10-600

Abstract: BYC10B-600 specification Rectifier diode ultrafast, low switching loss 30 BYC10-600 Forward dissipation, PF (W , , Pdsw (W) 100 Reverse recovery time, trr (ns) BYC10-600 f = 20 kHz Tj = 125 C 0.2 VR = 400 , Peak reverse recovery current, Irrm (A) BYC10-600 20 A 6 5 4 10 A f = 20 kHz Tj = 125 C VR = 400 V 10 20 A 3 IF = 5 A IF = 5 A 2 1 Tj = 125 C VR = 400 V BYC10-600 , recovery parameters trr, Irrm 20 BYC10-600 Forward current, IF (A) 20 F 0 1 2
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Original
BYC10B-600

ultraFast Recovery Bridge Rectifier

Abstract: BYC10-600 Rectifier diode ultrafast, low switching loss 30 BYC10-600 Forward dissipation, PF (W) Tmb(max , , Pdsw (W) 100 Reverse recovery time, trr (ns) BYC10-600 f = 20 kHz Tj = 125 C 0.2 VR = 400 , Peak reverse recovery current, Irrm (A) BYC10-600 20 A 6 5 4 10 A f = 20 kHz Tj = 125 C VR = 400 V 10 20 A 3 IF = 5 A IF = 5 A 2 1 Tj = 125 C VR = 400 V BYC10-600 , recovery parameters trr, Irrm 20 BYC10-600 Forward current, IF (A) 20 F 0 1 2
Philips Semiconductors
Original
ultraFast Recovery Bridge Rectifier

BP317

Abstract: BYC10-600 DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600 Rectifier diode Freewheeling and power factor , BYC10-600 anode (a) tab k 1 a 2 cathode (k) 1 2 LIMITING VALUES Limiting values , correction BYC10-600 THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance , correction 30 BYC10-600 Forward dissipation, PF (W) Tmb(max) C 90 dIF/dt 100 0.5 Irrm ID D = 1.0 Vo = 1.3 V Rs = 0.05 Ohms 25 BYC10-600 ID = IL 110 120 20
Philips Semiconductors
Original
BP317 SCA56

BYC10-600

Abstract: BYV79E FEATURES BYC10-600 SYMBOL · Extremely fast switching · Low reverse recovery current · Low , . PINNING PIN SOD59 (TO220AC) DESCRIPTION tab cathode 2 The BYC10-600 is supplied in the , Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC10-600 , , low switching loss 30 BYC10-600 Forward dissipation, PF (W) Tmb(max) C 90 dIF/dt 100 0.5 Irrm ID D = 1.0 Vo = 1.3 V Rs = 0.05 Ohms 25 BYC10-600 ID = IL 110
Philips Semiconductors
Original
Abstract: BYC10-600 20 September 2012 Hyperfast power diode Product data sheet 1. Product profile , product NXP Semiconductors BYC10-600 Hyperfast power diode 2. Pinning information Table 2. Pin , . Ordering information Table 3. Ordering information Package Name BYC10-600 TO-220AC Description plastic , ; sine-wave pulse Tstg Tj BYC10-600 Conditions Min -40 - Max 600 600 500 10 20 65 71 150 150 Unit , 20 September 2012 2/9 NXP Semiconductors BYC10-600 Hyperfast power diode 32 Ptot (W) 24 NXP Semiconductors
Original
Abstract: BYC10-600 27 May 2013 TO -22 0 AC Hyperfast power diode Product data sheet 1 , Semiconductors BYC10-600 Hyperfast power diode 5. Pinning information Table 2. Pin 1 2 mb Pinning , information Package Name BYC10-600 TO-220AC Description plastic single-ended package; heatsink mounted; 1 , 25 °C; sine-wave pulse tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse Tstg Tj BYC10-600 , BYC10-600 Hyperfast power diode 32 Ptot (W) 24 0.2 16 0.1 0.5 003aak437 25 Ptot (W) 20 4.0 15 NXP Semiconductors
Original

ultrafast diode 10a 400v

Abstract: power diode 500v 10A UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC10-600 ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE DESCRIPTION DIODE The UTC BYC10-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC10-600 can be used in applications, such , www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-023.b BYC10-600 ABSOLUTE , www.unisonic.com.tw 2 of 3 QW-R601-023.b BYC10-600 VIN 150uH typ IL Preliminary DIODE TYPICAL
Unisonic Technologies
Original
ultrafast diode 10a 400v power diode 500v 10A Rectifier Diode 20A Vrrm 500V half bridge converter Diode 400V 20A ultrafast diode 20a 400v BYC10L-600-TA2-T BYC10G-600-TA2-T

ultrafast diode 10a 400v

Abstract: diode 500v 10A UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC10-600 DIODE ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE DESCRIPTION The UTC BYC10-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC10-600 can be used in , -023.a BYC10-600 DIODE Preliminary ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Peak , TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R601-023.a BYC10-600 DIODE Preliminary
Unisonic Technologies
Original
diode 500v 10A diode 10a 400v DC DC converter 400V ULTRAFAST 10A 600V mosfet 500v 10A BYC10L-600- BYC10G-600-

bridge rectifier 8341

Abstract: BP317 specification Rectifier diode Freewheeling and power factor correction 30 BYC10-600 Forward , recovery switching losses, Pdsw (W) 100 Reverse recovery time, trr (ns) BYC10-600 f = 20 kHz , current, dIF/dt (A/us) 100 Peak reverse recovery current, Irrm (A) BYC10-600 20 A 6 5 4 , 125 C VR = 400 V BYC10-600 0 100 Rate of change of current, dIF/dt (A/us) 1 100 1000 , .9. Definition of reverse recovery parameters trr, Irrm 20 BYC10-600 Forward current, IF (A) 20 F
Philips Semiconductors
Original
bridge rectifier 8341
Abstract: Rs = 0.05 Ohms BYC10-600 Tmb(max) C D = 1.0 90 100 110 120 ID dIF/dt Irrm 0.5 0.2 , to diode reverse recovery. 0.25 100 Reverse recovery time, trr (ns) BYC10-600 f = 20 , , Ptsw (W) 20 A 100 Peak reverse recovery current, Irrm (A) BYC10-600 10 A f = 20 kHz Tj = 125 C VR = 400 V 10 20 A IF = 5 A IF = 5 A 2 1 BYC10-600 0 100 Rate of change of current , , IF (A) Tj = 25 C Tj = 150 C BYC10-600 t 15 rr time 10 typ max Q I I s 10 NXP Semiconductors
Original
Abstract: , low switching loss 30 BYC10-600 Forward dissipation, PF (W) Tmb(max) C 90 dIF/dt , recovery time, trr (ns) BYC10-600 f = 20 kHz Tj = 125 C 0.2 VR = 400 V 10 A 20 A 0.15 10 A , , Irrm (A) BYC10-600 20 A 6 5 4 10 A f = 20 kHz Tj = 125 C VR = 400 V 10 20 A 3 IF = 5 A IF = 5 A 2 1 Tj = 125 C VR = 400 V BYC10-600 0 100 Rate of change of , BYC10-600 Forward current, IF (A) 20 F 0 1 2 Forward voltage, VF (V) 3 4 Fig Philips Semiconductors
Original

N mosfet 400v 100A

Abstract: UNISO TE NIC CHNO G SCO LTD LO IE ., BYC10-600 Preliminary DIODE U LT RAFAST , LOW SWI T CH I N G LOSS RECT I FI ER DI ODE Ì DESCRI PT I ON The UTC BYC10-600 is a rectifier diode , . The UTC BYC10-600 can be used in applications, such as half-bridge/full-bridge switched mode power , Pin Assignment 1 2 Tab K A K Packing Tube 1 of 3 QW-R601-023.b BYC10-600 Ì DIODE , 8 11 V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R601-023.b BYC10-600
Unisonic Technologies
Original
N mosfet 400v 100A
Abstract: BYC10-600 Forward dissipation, PF (W) Tmb(max) C 90 dIF/dt 100 0.5 Irrm ID D , Reverse recovery time, trr (ns) BYC10-600 10 A 20 A 0.15 10 A IF = 5 A 20 A 0.1 , Rate of change of current, dIF/dt (A/us) 100 Peak reverse recovery current, Irrm (A) BYC10-600 , ) BYC10-600 Rate of change of current, dIF/dt (A/us) 1000 Fig.8. Typical peak reverse recovery , 20 BYC10-600 Forward current, IF (A) 20 F BYC10-600 100mA BYC10-600 Reverse NXP Semiconductors
Original
Abstract: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES · Extrem ely fa st sw itching · Low reverse recovery current · Low therm al resistance · R educes sw itching losses in associated M O SFET BYC10-600 SYMBOL QUICK REFERENCE DATA V R = 600 V V F < 1.8 V IF(av) = 10 A trr = 19 ns (typ) APPLICATIONS · Active pow er fa cto r correction · H , Dimensions in mm Net Mass: 2 g BYC10-600 4,5 max l ^ - 1VjW- max 1,3 3,7 1 - T 2,8 5,9 min A -
OCR Scan
T0220AC
Abstract: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES · Extrem ely fa st sw itching · Low reverse recovery current · Low therm al resistance · R educes sw itching losses in associated M O SFET BYC10-600 SYMBOL QUICK REFERENCE DATA V R = 600 V V F < 1.8 V IF(av) = 10 A trr = 19 ns (typ) APPLICATIONS · Active pow er fa cto r correction · H , loss MECHANICAL DATA Dimensions in mm Net Mass: 2 g BYC10-600 4,5 max l ^ - 1VjW- max 1,3 3 -
OCR Scan

FULL WAVE mosfet RECTIFIER CIRCUITS

Abstract: snubber CIRCUITS mosfet Note Table:1. Summary of PFC diode characteristics. Types BYC5-600 BYC8-600 BYC10-600 , -600 BYC8-600 BYC10-600 chip back metallisation solder BYC5-600 [PICTURE] SOT404 Conclusion
Philips Components
Original
BYC5B-600 FULL WAVE mosfet RECTIFIER CIRCUITS snubber CIRCUITS mosfet 500a reversed diode Amp. mosfet 1000 watt byc10-600 equivalent high power fast recovery diodes 5 ns
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