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Part : BYC10-600,127 Supplier : WeEn Semiconductor Manufacturer : Avnet Stock : 5,000 Best Price : $0.3714 Price Each : $0.65
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Part : BYC10-600PQ Supplier : WeEn Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.3374 Price Each : $0.3784
Part : BYC10-600PQ Supplier : WeEn Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.3286 Price Each : $0.5750
Part : BYC10-600CT,127 Supplier : NXP Semiconductors Manufacturer : Newark element14 Stock : - Best Price : $0.4320 Price Each : $0.9960
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Part : BYC10-600127 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 8,383 Best Price : $0.49 Price Each : $0.60
Part : BYC10-600CT127 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 13,196 Best Price : $0.47 Price Each : $0.58
Part : BYC10-600P127 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 1,800 Best Price : $0.41 Price Each : $0.51
Part : BYC10-600PQ Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 779 Best Price : $0.41 Price Each : $0.51
Part : BYC10-600 Supplier : Philips Semiconductors Manufacturer : America II Electronics Stock : 3,224 Best Price : - Price Each : -
Part : BYC10-600,127 Supplier : NXP Semiconductors Manufacturer : Ameya Holding Stock : - Best Price : - Price Each : -
Part : BYC10-600.127 Supplier : NXP Semiconductors Manufacturer : Ameya Holding Stock : - Best Price : - Price Each : -
Part : BYC10-600CT,127 Supplier : NXP Semiconductors Manufacturer : Ameya Holding Stock : - Best Price : - Price Each : -
Part : BYC10-600CT.127 Supplier : NXP Semiconductors Manufacturer : Ameya Holding Stock : - Best Price : - Price Each : -
Part : BYC10-600PQ Supplier : NXP Semiconductors Manufacturer : Ameya Holding Stock : - Best Price : - Price Each : -
Part : BYC10-600,127 Supplier : WeEn Semiconductor Manufacturer : Chip1Stop Stock : 190 Best Price : $0.5430 Price Each : $0.5680
Part : BYC10-600CT,127 Supplier : WeEn Semiconductor Manufacturer : Chip1Stop Stock : 188 Best Price : $0.6860 Price Each : $1.10
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BYC10-600 Datasheet

Part Manufacturer Description PDF Type
BYC10-600 NXP Semiconductors BYC10-600 - DIODE 10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC, Rectifier Diode Original
BYC10-600 NXP Semiconductors Understanding PFC - SMPS applications; Bipolar power diodes for Switch Mode Power Supplies Original
BYC10-600 NXP Semiconductors Understanding PFC - Lighting applications; Bipolar power diodes and transistors for electronic ballast Original
BYC10-600 Philips Semiconductors Rectifier diode ultrafast, low switching loss Original
BYC10-600 Philips Semiconductors Rectifier diode ultrafast, low switching loss Original
BYC10-600,127 NXP Semiconductors Rectifier diode ultrafast, low switching loss - @ I<sub>F</sub>: 10 A; I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 10 A; Single/dual: SINGLE ; t<sub>rr</sub>: 19 ns; V<sub>F</sub>: 1.8 V; V<sub>RRM</sub>: 600 V; Package: week 1, 2005 Original
BYC10-600,127 NXP Semiconductors BYC10-600 - DIODE 10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC, Rectifier Diode Original
BYC10-600CT NXP Semiconductors BYC10-600 - DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB, TO-220AB, 3 PIN, Rectifier Diode Original
BYC10-600CT NXP Semiconductors Understanding PFC - SMPS applications; Bipolar power diodes for Switch Mode Power Supplies Original
BYC10-600CT NXP Semiconductors Understanding PFC - Lighting applications; Bipolar power diodes and transistors for electronic ballast Original
BYC10-600CT Philips Semiconductors Rectifier diode ultrafast, low switching loss Original
BYC10-600CT Philips Semiconductors Rectifier diode ultrafast, low switching loss Original
BYC10-600CT,127 NXP Semiconductors Rectifier diode ultrafast, low switching loss; Package: week 1, 2005 Original
BYC10-600CT,127 NXP Semiconductors BYC10-600 - DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB, TO-220AB, 3 PIN, Rectifier Diode Original

BYC10-600

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: switching losses in associated MOSFET BYC10-600 SYMBOL QUICK REFERENCE DATA VR = 600 V VF 1.8 V , Half-bridge lighting ballasts · Half-bridge/ full-bridge switched mode power supplies. The BYC10-600 is , BYC10-600 MAX. 1.8 2.3 2.9 200 3.0 55 40 7.5 12 11 UNIT V V V uA mA ns ns ns A A V IL Vin 150 , Rectifier diode ultrafast, low switching loss BYC10-600 30 25 20 Forward dissipation, PF (W) Vo = 1.3 V Rs = 0.05 Ohms BYC10-600 Tmb(max) C D = 1.0 90 100 110 120 ID dIF/dt Irrm 0.5 Philips Semiconductors
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Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600 Rectifier diode ultrafast, low switching loss , thermal resistance · Reduces switching losses in associated MOSFET BYC10-600 SYMBOL QUICK , supplies. The BYC10-600 is supplied in the SOD59 (TO220AC) conventional leaded package. PINNING PIN 1 2 , 35 19 32 3 9.5 8 BYC10-600 MAX. 1.8 2.3 2.9 200 3.0 55 40 7.5 12 11 UNIT V V V A mA ns ns ns , specification Rectifier diode ultrafast, low switching loss BYC10-600 30 25 20 Forward dissipation NXP Semiconductors
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Abstract: FEATURES BYC10-600 SYMBOL · Extremely fast switching · Low reverse recovery current · Low , . PINNING PIN SOD59 (TO220AC) DESCRIPTION cathode 2 The BYC10-600 is supplied in the SOD59 , Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC10-600 , , low switching loss 30 BYC10-600 Forward dissipation, PF (W) Tmb(max) C 90 dIF/dt 100 0.5 Irrm ID D = 1.0 Vo = 1.3 V Rs = 0.05 Ohms 25 BYC10-600 ID = IL 110 Philips Semiconductors
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Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600 Rectifier diode ultrafast, low switching loss , ultrafast, low switching loss FEATURES BYC10-600 SYMBOL â'¢ Extremely fast switching â'¢ Low , 2 The BYC10-600 is supplied in the SOD59 (TO220AC) conventional leaded package. 1 anode , specification Rectifier diode ultrafast, low switching loss BYC10-600 ELECTRICAL CHARACTERISTICS Tj = , BYC10-600 Forward dissipation, PF (W) Tmb(max) C 90 dIF/dt 100 0.5 Irrm ID D NXP Semiconductors
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Abstract: FEATURES BYC10-600 SYMBOL · Extremely fast switching · Low reverse recovery current · Low , . PINNING PIN SOD59 (TO220AC) DESCRIPTION tab cathode 2 The BYC10-600 is supplied in the , Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC10-600 , BYC10-600 Forward dissipation, PF (W) Tmb(max) C 90 dIF/dt 100 0.5 Irrm ID D = 1.0 Vo = 1.3 V Rs = 0.05 Ohms 25 BYC10-600 ID = IL 110 120 20 0.2 losses -
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BYV79E
Abstract: specification Rectifier diode ultrafast, low switching loss 30 BYC10-600 Forward dissipation, PF (W , , Pdsw (W) 100 Reverse recovery time, trr (ns) BYC10-600 f = 20 kHz Tj = 125 C 0.2 VR = 400 , Peak reverse recovery current, Irrm (A) BYC10-600 20 A 6 5 4 10 A f = 20 kHz Tj = 125 C VR = 400 V 10 20 A 3 IF = 5 A IF = 5 A 2 1 Tj = 125 C VR = 400 V BYC10-600 , recovery parameters trr, Irrm 20 BYC10-600 Forward current, IF (A) 20 F 0 1 2 -
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BYC10B-600
Abstract: Rectifier diode ultrafast, low switching loss 30 BYC10-600 Forward dissipation, PF (W) Tmb(max , , Pdsw (W) 100 Reverse recovery time, trr (ns) BYC10-600 f = 20 kHz Tj = 125 C 0.2 VR = 400 , Peak reverse recovery current, Irrm (A) BYC10-600 20 A 6 5 4 10 A f = 20 kHz Tj = 125 C VR = 400 V 10 20 A 3 IF = 5 A IF = 5 A 2 1 Tj = 125 C VR = 400 V BYC10-600 , recovery parameters trr, Irrm 20 BYC10-600 Forward current, IF (A) 20 F 0 1 2 Philips Semiconductors
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ultraFast Recovery Bridge Rectifier
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600 Rectifier diode Freewheeling and power factor , BYC10-600 anode (a) tab k 1 a 2 cathode (k) 1 2 LIMITING VALUES Limiting values , correction BYC10-600 THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance , correction 30 BYC10-600 Forward dissipation, PF (W) Tmb(max) C 90 dIF/dt 100 0.5 Irrm ID D = 1.0 Vo = 1.3 V Rs = 0.05 Ohms 25 BYC10-600 ID = IL 110 120 20 Philips Semiconductors
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BP317 SCA56
Abstract: FEATURES BYC10-600 SYMBOL · Extremely fast switching · Low reverse recovery current · Low , . PINNING PIN SOD59 (TO220AC) DESCRIPTION tab cathode 2 The BYC10-600 is supplied in the , Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC10-600 , , low switching loss 30 BYC10-600 Forward dissipation, PF (W) Tmb(max) C 90 dIF/dt 100 0.5 Irrm ID D = 1.0 Vo = 1.3 V Rs = 0.05 Ohms 25 BYC10-600 ID = IL 110 Philips Semiconductors
Original
Abstract: BYC10-600 20 September 2012 Hyperfast power diode Product data sheet 1. Product profile , product NXP Semiconductors BYC10-600 Hyperfast power diode 2. Pinning information Table 2. Pin , . Ordering information Table 3. Ordering information Package Name BYC10-600 TO-220AC Description plastic , ; sine-wave pulse Tstg Tj BYC10-600 Conditions Min -40 - Max 600 600 500 10 20 65 71 150 150 Unit , 20 September 2012 2/9 NXP Semiconductors BYC10-600 Hyperfast power diode 32 Ptot (W) 24 NXP Semiconductors
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Abstract: BYC10-600 27 May 2013 TO -22 0 AC Hyperfast power diode Product data sheet 1 , Semiconductors BYC10-600 Hyperfast power diode 5. Pinning information Table 2. Pin 1 2 mb Pinning , information Package Name BYC10-600 TO-220AC Description plastic single-ended package; heatsink mounted; 1 , 25 °C; sine-wave pulse tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse Tstg Tj BYC10-600 , BYC10-600 Hyperfast power diode 32 Ptot (W) 24 0.2 16 0.1 0.5 003aak437 25 Ptot (W) 20 4.0 15 NXP Semiconductors
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Abstract: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC10-600 ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE DESCRIPTION DIODE The UTC BYC10-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC10-600 can be used in applications, such , www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-023.b BYC10-600 ABSOLUTE , www.unisonic.com.tw 2 of 3 QW-R601-023.b BYC10-600 VIN 150uH typ IL Preliminary DIODE TYPICAL Unisonic Technologies
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ultrafast diode 10a 400v power diode 500v 10A Diode 400V 20A half bridge converter Rectifier Diode 20A Vrrm 500V ultrafast diode 20a 400v BYC10L-600-TA2-T BYC10G-600-TA2-T
Abstract: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC10-600 DIODE ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE DESCRIPTION The UTC BYC10-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC10-600 can be used in , -023.a BYC10-600 DIODE Preliminary ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Peak , TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R601-023.a BYC10-600 DIODE Preliminary Unisonic Technologies
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diode 500v 10A diode 10a 400v DC DC converter 400V ULTRAFAST 10A 600V mosfet 500v 10A BYC10L-600- BYC10G-600-
Abstract: specification Rectifier diode Freewheeling and power factor correction 30 BYC10-600 Forward , recovery switching losses, Pdsw (W) 100 Reverse recovery time, trr (ns) BYC10-600 f = 20 kHz , current, dIF/dt (A/us) 100 Peak reverse recovery current, Irrm (A) BYC10-600 20 A 6 5 4 , 125 C VR = 400 V BYC10-600 0 100 Rate of change of current, dIF/dt (A/us) 1 100 1000 , .9. Definition of reverse recovery parameters trr, Irrm 20 BYC10-600 Forward current, IF (A) 20 F Philips Semiconductors
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bridge rectifier 8341
Abstract: Rs = 0.05 Ohms BYC10-600 Tmb(max) C D = 1.0 90 100 110 120 ID dIF/dt Irrm 0.5 0.2 , to diode reverse recovery. 0.25 100 Reverse recovery time, trr (ns) BYC10-600 f = 20 , , Ptsw (W) 20 A 100 Peak reverse recovery current, Irrm (A) BYC10-600 10 A f = 20 kHz Tj = 125 C VR = 400 V 10 20 A IF = 5 A IF = 5 A 2 1 BYC10-600 0 100 Rate of change of current , , IF (A) Tj = 25 C Tj = 150 C BYC10-600 t 15 rr time 10 typ max Q I I s 10 NXP Semiconductors
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Abstract: , low switching loss 30 BYC10-600 Forward dissipation, PF (W) Tmb(max) C 90 dIF/dt , recovery time, trr (ns) BYC10-600 f = 20 kHz Tj = 125 C 0.2 VR = 400 V 10 A 20 A 0.15 10 A , , Irrm (A) BYC10-600 20 A 6 5 4 10 A f = 20 kHz Tj = 125 C VR = 400 V 10 20 A 3 IF = 5 A IF = 5 A 2 1 Tj = 125 C VR = 400 V BYC10-600 0 100 Rate of change of , BYC10-600 Forward current, IF (A) 20 F 0 1 2 Forward voltage, VF (V) 3 4 Fig Philips Semiconductors
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Abstract: UNISO TE NIC CHNO G SCO LTD LO IE ., BYC10-600 Preliminary DIODE U LT RAFAST , LOW SWI T CH I N G LOSS RECT I FI ER DI ODE Ì DESCRI PT I ON The UTC BYC10-600 is a rectifier diode , . The UTC BYC10-600 can be used in applications, such as half-bridge/full-bridge switched mode power , Pin Assignment 1 2 Tab K A K Packing Tube 1 of 3 QW-R601-023.b BYC10-600 Ì DIODE , 8 11 V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R601-023.b BYC10-600 Unisonic Technologies
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N mosfet 400v 100A
Abstract: BYC10-600 Forward dissipation, PF (W) Tmb(max) C 90 dIF/dt 100 0.5 Irrm ID D , Reverse recovery time, trr (ns) BYC10-600 10 A 20 A 0.15 10 A IF = 5 A 20 A 0.1 , Rate of change of current, dIF/dt (A/us) 100 Peak reverse recovery current, Irrm (A) BYC10-600 , ) BYC10-600 Rate of change of current, dIF/dt (A/us) 1000 Fig.8. Typical peak reverse recovery , 20 BYC10-600 Forward current, IF (A) 20 F BYC10-600 100mA BYC10-600 Reverse NXP Semiconductors
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Abstract: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES · Extrem ely fa st sw itching · Low reverse recovery current · Low therm al resistance · R educes sw itching losses in associated M O SFET BYC10-600 SYMBOL QUICK REFERENCE DATA V R = 600 V V F < 1.8 V IF(av) = 10 A trr = 19 ns (typ) APPLICATIONS · Active pow er fa cto r correction · H , Dimensions in mm Net Mass: 2 g BYC10-600 4,5 max l ^ - 1VjW- max 1,3 3,7 1 - T 2,8 5,9 min A -
OCR Scan
T0220AC
Abstract: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES · Extrem ely fa st sw itching · Low reverse recovery current · Low therm al resistance · R educes sw itching losses in associated M O SFET BYC10-600 SYMBOL QUICK REFERENCE DATA V R = 600 V V F < 1.8 V IF(av) = 10 A trr = 19 ns (typ) APPLICATIONS · Active pow er fa cto r correction · H , loss MECHANICAL DATA Dimensions in mm Net Mass: 2 g BYC10-600 4,5 max l ^ - 1VjW- max 1,3 3 -
OCR Scan
Abstract: Note Table:1. Summary of PFC diode characteristics. Types BYC5-600 BYC8-600 BYC10-600 , -600 BYC8-600 BYC10-600 chip back metallisation solder BYC5-600 [PICTURE] SOT404 Conclusion Philips Components
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BYC5B-600 FULL WAVE mosfet RECTIFIER CIRCUITS snubber CIRCUITS mosfet 500a reversed diode Amp. mosfet 1000 watt byc10-600 equivalent high power fast recovery diodes 5 ns
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