NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: N=1.250869271 BV=70) * .MODEL DDG D , N=1.221463278 BV=70) * .MODEL DDG D , (CJO=7.30514E-10 30514E-10 VJ=0.841622114 M=0.492520593 +RS=0.00763334 IS=1.000E-10 000E-10 TT=23.0E-9 N=1.202445731 BV=70 , N=1.163252509 BV=70) * .MODEL DDG D , N=1.227701726 BV=70) * .MODEL DDG D ... | Original |
24 pages, |
2SJ604 2SJ603 2SJ602 2SJ601 M2SJ602 2SJ600 2SJ599 2SJ621 2SJ598 2SJ624-A M2SJ607 M2SJ605 SPICE2G6 m0565 BV-70 datasheet abstract |
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| Abstract: VISHAY 1N5711 1N5711_Spice Vishay Semiconductors 1N5711 1N5711 Spice Parameters * * (c)1999 Thomatronik GmbH * * info@thomatronik.de * * * * Author: Arpad Buermen * * Arpad.Burmen@ieee.org * * .SUBCKT DN5711 DN5711 1 2 .MODEL SD D ( + N=1.68359 + IS=1.50122E-007 50122E-007 + RS=31.3769 + EG=0.69 + XTI=2 + CJO=2E-012 2E-012 + VJ=0.393705 + M=0.196045 + FC=0.5 + TT=1.4427E-009 4427E-009 + BV=70 + IBV=0.001 + KF=0 + AF=1 ) .MODEL PND D ( + IS=1.16495E-014 16495E-014 + RS=1.06783 + ... | Original |
2 pages, |
DN5711 1N5711 1N5711 spice 1N5711 abstract |
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| Abstract: (CJO=1.13503E-9 13503E-9 VJ=1.6347627 M=0.5150107 +RS=0.003065613 IS=1.0E-10 0E-10 TT=20.5E-9 N=1.131865 BV=70 , (CJO=1.13503E-9 13503E-9 VJ=1.6347627 M=0.5150107 +RS=0.003065613 IS=1.0E-10 0E-10 TT=20.5E-9 N=1.131865 BV=70 , VJ=1.310085 M=0.65524 +RS=0.00236226 IS=1.0E-10 0E-10 TT=20.5E-9 N=1.088235 BV=70 , VJ=1.310085 M=0.65524 +RS=0.00236226 IS=1.0E-10 0E-10 TT=21.0E-9 N=1.088235 BV=70 ... | Original |
21 pages, |
2SK3365 2SK3356 2SK3357 2SK3354 2SK3366 2SK3367 2SK3377 2SK3353 2SK3307 2SK3355 SPICE2G6 M2SK3377 2SK33 44358 datasheet abstract |
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| Abstract: : Commercial Temperature Product BVÂ70 VCC Write Control Parameter BVÂ120 3.3 ± 0.3V Load , Product VCC Write Control Parameter BVÂ70 3.3V ± 0.3V Load 50 pF Unit Errata , Erratum: Commercial Temperature Product BVÂ70 VCC 5V ± 10% Load Parameter 5V ± 5% 30 ... | Original |
23 pages, |
intel topside mark intel DOC 29768 28f800 intel flash 28F800 topside mark 28F800BV/CV/CE 28F008BV/BE 28F008/800BV/BE/CV/CE 28F800BV/CV/CE abstract |
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| Abstract: tEHEL Specifications New Write Specifications: Commercial Temperature Product BVÂ70 VCC Load , Product BVÂ70 VCC 3.3V ± 0.3V Load Write Control WE#-Controlled Writes 50 pF Parameter , Product BVÂ70 VCC 5V ± 5% 5V ± 10% Load 30 pF 100 pF Errata Spec Errata ... | Original |
24 pages, |
intel flash 28F800 topside mark intel DOC 28f800 errata 28F800BV/CV/CE 28F008BV/BE 28F008/800BV/BE/CV/CE 28F800BV/CV/CE abstract |
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| Abstract: Write Specifications: Commercial Temperature Product BVÂ70 VCC Load Write Control 50 pF , Product BVÂ70 VCC 3.3V ± 0.3V Load Write Control WE#-Controlled Writes 50 pF Parameter , Product BVÂ70 VCC 5V ± 5% 5V ± 10% Load 30 pF 100 pF Errata Spec Errata ... | Original |
23 pages, |
intel DOC intel flash 28F800 topside mark 28F800BV/CV/CE 28F008BV/BE 28F008/800BV/BE/CV/CE 28F800BV/CV/CE abstract |
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| Abstract: ) .MODEL D1014DB D1014DB D (CJO=88.5P RS=0.25 VJ=0.7 M=0.33 BV=70) .ENDS D1014 D1014.s2p ! Vds=28V ... | Original |
4 pages, |
D1014 D1014 abstract |
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| Abstract: in tel SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 8-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B 28F800BV-T/B, 28F800CV-T/B 28F800CV-T/B, 28F008BV-T/B 28F008BV-T/B 28F800CE-T/B 28F800CE-T/B, 28F008BE-T/B 28F008BE-T/B Intel SmartVoltage Technology - 5 V or 12 V Program/Erase - 2.7 V, 3.3 V or 5 V Read Operation Very High Performance Read - 5 V: 70 ns Access Time - 3 V: 120 ns Access Time - 2.7 V: 120 ns Access Time Low Power Consumption - Max 60 mA Read Current at 5 V - Max 30 mA Read Current at 2.7 V-3.6 V x8/x16-Selectable I ... | OCR Scan |
58 pages, |
28F800 28F800BV-T/B 28F800CV-T/B 28F008BV-T/B 28F800CE-T/B 28F008BE-T/B 28F800BV-T/B abstract |
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| Abstract: 8-MBIT (512K X 16 1024K 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T 28F800BV-T B 28F800CV-T 28F800CV-T B 28F008BV-T 28F008BV-T B 28F800CE-T 28F800CE-T B 28F008BE-T 28F008BE-T B Y Intel SmartVoltage Technology 5V or 12V Program Erase 2 7V 3 3V or 5V Read Operation Program Time Reduced 60% at 12V VPP Y Extended Cycling Capability 100 000 Block Erase Cycles (Commercial Temperature) 10 000 Block Erase Cycles (Extended Temperature) Y Very High Performance Read 5V 70 120 ns Max Access Time 30 40 ns Max Output ... | Original |
54 pages, |
t90 series SRAM TTL 1024K x 8 28F800CV-T 28F800CE-T 28F800BV-T 28F800 28F008BV-T 28F008BE-T 1024K 28F008B 16-KB 96-KB 128-KB 1024K abstract |
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| Abstract: E SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 8-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B 28F800BV-T/B, 28F800CV-T/B 28F800CV-T/B, 28F008BV-T/B 28F008BV-T/B 28F800CE-T/B 28F800CE-T/B, 28F008BE-T/B 28F008BE-T/B n n n n n n n Intel SmartVoltage Technology 5 V or 12 V Program/Erase 2.7 V, 3.3 V or 5 V Read Operation Very High Performance Read 5 V: 70 ns Access Time 3 V: 120 ns Access Time 2.7 V: 120 ns Access Time Low Power Consumption Max 60 mA Read Current at 5 V Max 30 mA Read Current at 2.7 V�6 V ... | Original |
58 pages, |
28F800 datasheet abstract |
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| Abstract: Photodevices cadmium sulphide photoconductive cells All types: Spectral response range 0.3 to 0.9 fXm book 1 part: 3 Type No. Incidence of Illumination and Description Drawing reference Max. Dissipation Ml at (°C) Max. Cell Voltage (d.c. or pk.) (V) Nominal* Cell Resistance (kill Ambient Temperature Limits (°C) ORP12 ORP12 End-on BU 200 25 110 2.4 - 10 to +60 ORP60 ORP60 End-on BV 70 25 350 60 - 40 to +70 ORP61 ORP61 Side-on BV 70 20 25 70 350 60 - 40 to +70 ORP62 ORP62 Side-on BV 100 25 350 48 - 40 to +70 OR ... | OCR Scan |
1 pages, |
RPY85 ORP6 Photoconductive Cell RPY71 RPY84 RPY82 BV-70 ORP62 ORP69 ORP61 RPY58 RPY58A photoconductive orp12 ORP60 orp12 photoconductive ORP12 ORP60 ORP12 abstract |
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| Abstract: 12 RK12L115 RK12L115 NEW %20% 20V DC/50V DC/50V AC 0.05W 300%5$ 25%15mNç©- 15,000cycles 40: to 185: Unit:mm 2 6 10 9 9.5 0.6 9.6 2 5 3 8 1.5 12 0.3 (3.2) 6é"Œ0.8 holes PC boardT=1.6 �1 T=1.6 (13) (3.5) 2 2.4 11 � R3 3.7 0.5 Ground Ground 2.5 12 8 1 3 17.5 4.5 11.2 5 � (7.5) 13 9 5 � 13.6 14.2 2.7 ... | Original |
3 pages, |
RK12L115 RK12L115 abstract |
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| Abstract: I Hll AV1X, H1X AV2X, Hll AV3X ft^l',' h * 11" *i, it ' ,1 ; I,; ,i.'. „ >. , -, ', wij ». â- â- " â- iS .f, *->i i>-i'B iH I- Hi >. u ,< -"i ,. . -11,1 m-. â- OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT DESCRIPTION The HI 1 AV is a optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor mounted in a standard 6-pin dual-in-line package. NOTES 1 a. The product type number consists of the basic product type followed by the letter "X" whic ... | OCR Scan |
4 pages, |
7002 transistor sm datasheet abstract |
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| .MODEL BAW56 BAW56 BAW56 BAW56 D (IS=24.2N RS=42M N=2.18 BV=70 IBV=66U + CJO=1.65P VJ=.75 M=.333 TT=8.64N) .ENDS XBAW56 XBAW56 XBAW56 XBAW56 1 2 1 BAW156 BAW156 BAW156 BAW156 D2 2 3 BAW156 BAW156 BAW156 BAW156 .MODEL BAW156 BAW156 BAW156 BAW156 D (IS=473P RS=42M N=1.75 BV=70 IBV=1.3U + CJO=2.65P VJ .MODEL MSD6150 MSD6150 MSD6150 MSD6150 D (IS=473P RS=42M N=1.75 BV=70 IBV=1.3U + CJO=6.63P VJ=.75 M=.333 TT=144N) .ENDS XMSD www.datasheetarchive.com/files/spicemodels/misc/modelos/diodekak.sub |
Spice Models | 21/02/2008 | 1.4 Kb | SUB | diodekak.sub |
| *SRC=B170;DI_B170;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B170 D ( IS=89.3u RS=42.2m BV=70.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) www.datasheetarchive.com/files/diodes-inc/spice-model/4259.mod |
Diodes, Inc. | 04/09/2012 | 0.17 Kb | MOD | 4259.mod |
| *SRC=SB170 SB170 SB170 SB170;DI_SB170 SB170 SB170 SB170;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB170 SB170 SB170 SB170 D ( IS=6.63u RS=62.3m BV=70.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) www.datasheetarchive.com/files/diodes-inc/spice-model/4427.mod |
Diodes, Inc. | 04/09/2012 | 0.17 Kb | MOD | 4427.mod |
| *SRC=B370;DI_B370;Diodes;Si; 70.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B370 D ( IS=916u RS=14.1m BV=70.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) www.datasheetarchive.com/files/diodes-inc/spice-model/4297.mod |
Diodes, Inc. | 04/09/2012 | 0.16 Kb | MOD | 4297.mod |
| *SRC=B270;DI_B270;Diodes;Si; 70.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B270 D ( IS=746u RS=21.0m BV=70.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) www.datasheetarchive.com/files/diodes-inc/spice-model/4276.mod |
Diodes, Inc. | 04/09/2012 | 0.16 Kb | MOD | 4276.mod |
| .model MMBD1203 MMBD1203 MMBD1203 MMBD1203 D(Is=10E-15 10E-15 10E-15 10E-15 Rs=1.0 CJO=1.3p Tt=12n Bv=70 Ibv=0.1p) * 85-?-? Original library www.datasheetarchive.com/files/fairchild/pdfs/models actual/mmbd1203.mod |
Fairchild | 22/08/2003 | 0.11 Kb | MOD | mmbd1203.mod |
| .model 1N4150 1N4150 1N4150 1N4150 D(Is=10E-15 10E-15 10E-15 10E-15 Rs=1.0 CJO=1.3p Tt=12n Bv=70 Ibv=0.1p) * 85-?-? Original library www.datasheetarchive.com/files/fairchild/pdfs/models actual/1n4150.mod |
Fairchild | 22/08/2003 | 0.1 Kb | MOD | 1n4150.mod |
| .model MMBD1201 MMBD1201 MMBD1201 MMBD1201 D(Is=10E-15 10E-15 10E-15 10E-15 Rs=1.0 CJO=1.3p Tt=12n Bv=70 Ibv=0.1p) * 85-?-? Original library www.datasheetarchive.com/files/fairchild/pdfs/models actual/mmbd1201.mod |
Fairchild | 22/08/2003 | 0.11 Kb | MOD | mmbd1201.mod |
| .model 1N4152 1N4152 1N4152 1N4152 D(Is=0.1p Rs=6 CJO=1p Tt=3n Bv=70 Ibv=0.1p) * 85-?-? Original library www.datasheetarchive.com/files/fairchild/pdfs/models actual/1n4152.mod |
Fairchild | 22/08/2003 | 0.1 Kb | MOD | 1n4152.mod |
| .model MMBD1204 MMBD1204 MMBD1204 MMBD1204 D(Is=10E-15 10E-15 10E-15 10E-15 Rs=1.0 CJO=1.3p Tt=12n Bv=70 Ibv=0.1p) * 85-?-? Original library www.datasheetarchive.com/files/fairchild/pdfs/models actual/mmbd1204.mod |
Fairchild | 22/08/2003 | 0.11 Kb | MOD | mmbd1204.mod |