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Part Manufacturer Description Last Check Distributor Ordering
BUZ901 TT Electronics MOSFET, N, TO-3 from £5.11 (Dec 2016) Farnell element14 Buy
BUZ901 TT Electronics N CHANNEL MOSFET, 200V, 8A, TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:1.5V; No. of Pins:2 ;RoHS Compliant: Yes (Dec 2016) Newark element14 Buy
BUZ901 TT Electronics MOSFET N-Channel 200V 8A TO-3 42 (Dec 2016) RS Components Buy
BUZ901CDP TT Electronics BUZ901DP TRANSISTOR 5 from $15.04 (Dec 2016) Allied Electronics Buy
BUZ901D TT Electronics MOSFET, N, TO-3 from €356.1300 (Nov 2016) Farnell element14 Buy
BUZ901D TT Electronics N CHANNEL MOSFET, 200V, 16A, TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:200V; On Resistance Rds(on):750mohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:1.5V; Product Range:- ;RoHS Compliant: Yes (Dec 2016) Newark element14 Buy
BUZ901DP TT Electronics Bipolar Transistors - BJT LATERAL MOSFET N-CH 200V 16A (Dec 2016) TTI Buy
BUZ901P TT Electronics MOSFET, N, TO-247 109 from $11.62 (Dec 2016) element14 Asia-Pacific Buy
BUZ901P TT Electronics MOSFET, N, TO-247 117 from £7.36 (Dec 2016) Farnell element14 Buy
BUZ901P TT Electronics N CHANNEL MOSFET, 200V, 8A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:1.5V; No. of Pins:3 ;RoHS Compliant: Yes 69 from $14.88 (Dec 2016) Newark element14 Buy
BUZ901P TT Electronics MOSFET N-Channel 200V 8A TO-247 48 (Dec 2016) RS Components Buy

BUZ901 Datasheet

Part Manufacturer Description PDF Type Ordering
BUZ901 N/A Shortform Datasheet & Cross References Data
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1 pages,
82.41 Kb

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BUZ901D N/A Shortform Datasheet & Cross References Data
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1 pages,
82.41 Kb

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BUZ901P N/A Shortform Datasheet & Cross References Data
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1 pages,
82.41 Kb

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BUZ901 Magnatec N-channel power MOSFET for audio applications, 200V
ri

4 pages,
39.43 Kb

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BUZ901D Magnatec N-CHANNEL POWER MOSFET
ri

4 pages,
40.51 Kb

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BUZ901D Magnatec Silicon N-Channel Power Mosfet
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41 pages,
1710.43 Kb

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BUZ901DP Magnatec N-CHANNEL POWER MOSFET
ri

4 pages,
39.38 Kb

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BUZ901DP Magnatec N-CHANNEL POWER MOSFET
ri

3 pages,
40.58 Kb

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BUZ901P Magnatec N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
ri

4 pages,
37.81 Kb

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BUZ901P Magnatec N-channel power MOSFET for audio applications, 200V
ri

4 pages,
85.21 Kb

Original Buy
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BUZ901

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BUZ900 BUZ900 BUZ901 MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 , °C unless otherwise stated) VDSX Drain – Source Voltage BUZ900 BUZ900 160V BUZ901 200V ±14V VGSS , °C Prelim. 10/94 BUZ900 BUZ900 BUZ901 MAGNA TEC STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Characteristic Test Conditions Min. VGS = –10V BUZ900 BUZ900 BUZ901 200 Gate â , VDS = 10V V 10 BUZ900 BUZ900 mA VDS = 200V 10 BUZ901 yfs* V 12 VDS = 160V ... Original
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4 pages,
24.38 Kb

BUZ900 BUZ901 TEXT
datasheet frame
Abstract: BUZ900 BUZ900 BUZ901 MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 , Voltage BUZ900 BUZ900 160V BUZ901 200V VGSS Gate ­ Source Voltage ID Continuous Drain Current , . Fax (01455) 552612. 125W ­55 to 150°C Prelim. 10/94 BUZ900 BUZ900 BUZ901 MAGNA TEC , . VGS = ­10V BUZ900 BUZ900 BUZ901 200 Gate ­ Source Breakdown Voltage VDS = 0 IG = ±100uA , VDS = 10V Forward Transfer Admittance V 10 BUZ900 BUZ900 mA VDS = 200V 10 BUZ901 yfs ... Magnatec
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datasheet

4 pages,
39.43 Kb

BUZ905 BUZ906 BUZ900 BUZ901 TEXT
datasheet frame
Abstract: -1645 1. 2SK1057 2SK1057 / 2SJ161 2SJ161 2SK1058 2SK1058 / 2SJ162 2SJ162 BUZ900 BUZ900 / BUZ905 BUZ905 BUZ901 / BUZ906 BUZ906 2SK1529 2SK1529 / 2SJ200 2SJ200 , 6. 50mA 150mA , 7 FFT 8 THD MOSFET BJT AB Magnatec BUZ901/BUZ906 3 FFT , . 100mA 30023239 9. 500mA 30023219 10. 500mA 12. 200mA 11 13 Magnatec BUZ901/BUZ906 , 40W/8 4 , Magnatec BUZ901/BUZ906 , 1kHz THD+N , Time 0 30023225 10 30 16. 2SK1058/2SJ162 2SK1058/2SJ162 10 200mA Magnatec BUZ901/BUZ906 17 18 ... National Semiconductor
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datasheet

24 pages,
889.55 Kb

BUZ900 2 ch 100w audio amplifier BUZ906 2sk1529 2sj200 amplifier irfp240 mosfet 100w amplifier LM4702 2SK1058 MOSFET 2SK1058 IRFP9240 BJT BD139 IRFP240 AN-1645 BD149 AN1645 lm4702 OUTPUT STAGE INFORMATION 100w mosfet audio power amplifier LM4072 2sk1058 2SJ162 Audio Power Amplifier MOSFET TOSHIBA TEXT
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Abstract: IV I A CB INI A BUZ900 BUZ900 BUZ901 MECHANICAL DATA Dimensions in mm N-CHANNEL POWER MOSFET , Voltage V DSX V GSS BUZ900 BUZ900 160 V ±14V 8A 8A @ Tcase = 2 5 °C BUZ901 200V Gate - Source Voltage , stated) Characteristic b v dsx BUZ900 BUZ900 BUZ901 Test Conditions VGS = -10V lD = 10mA < o Min , Breakdown Voltage Gate - Source Cut-Off Voltage Drain - Source Saturation Voltage BUZ900 BUZ900 BUZ901 Iq lD , 00 > O II o VDS = 200V BUZ901 < C O II o mA 10 0.7 2 S yfs* Forward Transfer ... OCR Scan
datasheet

4 pages,
103.96 Kb

BUZ900 BUZ901 TEXT
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Abstract: / 2SJ162 2SJ162 Renesas BUZ900 BUZ900 / BUZ905 BUZ905 Magnatec BUZ901 / BUZ906 BUZ906 Magnatec 2SK1529 2SK1529 / 2SJ200 2SJ200 , Class AB amplifier design. Using the Magnatec BUZ901/BUZ906 pair and the resistor bias circuit shown , of 100mA, 200mA and 300mA using the Magnatec BUZ901/BUZ906 pair. Similar results using the same bias , the graphs for the Renesas 2SK1058/2SJ162 2SK1058/2SJ162 pair and the Magnatec BUZ901/BUZ906 pair shows that three , FIGURE 16. 2SK1058/2SJ162 2SK1058/2SJ162 at 200mA Bias The same tests and graphs for the Magnatec BUZ901/ BUZ906 BUZ906 are ... National Semiconductor
Original
datasheet

24 pages,
622.58 Kb

ANXX 2sk1529 2sj200 2sk1530 irfp240 circuit diagram Audio Power Amplifier MOSFET TOSHIBA buz906 irfp9240 circuit diagram AN-1645 IRFP240 AN1645 BJT small signal low power BD139 transistor 2sj162 BJT BD139 LM4702 2SK1058 specification of 2SK1058 2sk1058 2SJ162 lm4702 OUTPUT STAGE INFORMATION 2SK1058 MOSFET APPLICATION NOTES BD139 heat sink TEXT
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Abstract: Drain' Source Breakdown voltage Vgg — -10V l(j —10mA BUZ900 BUZ900 BUZ901 160 200 Drain-Source cut - off current Vg s = -10V Vds= 160V BUZ900 BUZ900 Vds = 200V BUZ901 Gate ‘ Source Breakdown , BUZ905D BUZ905D ID = 16A VDSS = 160 V BUZ901D & BUZ906D BUZ906D ID = 16A VDSS = 200V CALL MAGNATEC FOR FURTHER ... OCR Scan
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3 pages,
61.18 Kb

000D530 TEXT
datasheet frame
Abstract: IVI A CB INI A BUZ900D BUZ900D BUZ901D M ECHANICAL DATA Dimensions in mm N-CHANNEL POWER MOSFET , RATINGS C rease = 25°C unless otherwise stated) V DSX V GSS BUZ900D BUZ900D BUZ901D Drain - Source , BUZ901D Test Conditions VGS = -10V lD = 10mA < (fi o II o Min. 160 200 ±14 0.1 Typ. Max , Voltage Drain - Source Saturation Voltage BUZ900D BUZ900D BUZ901 D Iq = ±100|aA lD = 100mA lD = 16A VDS= 160V , bsx Drain - Source Cut-Off Current v GS = - 10V VDS = 200V BUZ901 D < CO II o mA 10 1.4 4 ... OCR Scan
datasheet

4 pages,
99.05 Kb

n-channel 250w power mosfet BUZ900D BUZ901D TEXT
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Abstract: BUZ900DP BUZ900DP BUZ901DP M ECHANICAL DATA Dimensions in mm 5 .C ) N-CHANNEL POWER MOSFET POWER , GSS BUZ900DP BUZ900DP BUZ901DP Drain - Source Voltage Gate - Source Voltage Continuous Drain Current , otherwise stated) Characteristic b v dsx IVI A G IN IA rw BUZ900DP BUZ900DP BUZ901DP Test Conditions , Saturation Voltage BUZ900DP BUZ900DP BUZ901 DP Iq = ±100|aA lD = 100mA lD = 16A VDS= 160V BUZ900DP BUZ900DP b v gss V , Source Cut-Off Current v GS = - 10V VDS = 200V BUZ901 DP < CO II o mA 10 1.4 4 S yfs ... OCR Scan
datasheet

4 pages,
98.88 Kb

BUZ900DP BUZ901DP TEXT
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Abstract: BUZ900P BUZ900P BUZ901P M E C H A N IC A L DATA Dimensions in mm (inches) 4.69 (0.185) 5.31 (0.209 , (Tcase = 25°C unless otherwise stated) Characteristic b v dsx BUZ900P BUZ900P BUZ901P Test Conditions VGS , Voltage BUZ900P BUZ900P BUZ901 P Iq - i 1 OOjaA lD = 1 0 0 m A il 00 b v gss o II V GS(OFF) V D , Cut-Off Current BUZ900P BUZ900P v GS = - 10V o > o VDS = 200V BUZ901 P C O < mA 10 0.7 2 S , TEC Typical Output Characteristics 9 fi\ -p\ - - Tc = 25'C BUZ900P BUZ900P BUZ901P Typical Output ... OCR Scan
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4 pages,
106.21 Kb

buz906p BUZ901P buz901 NO10V BUZ900P TEXT
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Abstract: BUZ901 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)200 V(BR)GSS (V) I(D) Max. (A)8.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150Ãu Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) V(GS)th (V) (Min) @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition) I(DSS) Max. (A) @V(DS) (V ... American Microsemiconductor
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1 pages,
7.97 Kb

BUZ901 TEXT
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Abstract: 2SK135 2SK135 BUZ900D BUZ900D TO 3 160V 16A 250W N 2 X 2SK135 2SK135 BUZ900P BUZ900P T024 7 160V 8A 125W N 2SK1058 2SK1058 BUZ901 TO 3 200V , BUZ9 OOP 4 . 75 3 . 799 3 . 399 2.90 2 . 70 2 . 50 BUZ901 G.22 4 .978 4 . 454 3 . 80 3 . 54 3 .276 , BUZ900 BUZ900 BUZ901 MECHANICAL DATA Dimensions in mm N-CHANNEL POWER MOSFET .7 Max. Pin 1 - Gate TO , as BUZ905 BUZ905 & BUZ906 BUZ906 absolute maximum ratings Cease = 25°C unless otherwise stated) BUZ900 BUZ900 BUZ901 , . 10/94 Kx ffVIÄGINJA %l^SîWi BU2900 BU2900 BUZ901 STATIC CHARACTERISTICS (TCase = 25°c unless ... OCR Scan
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41 pages,
1710.43 Kb

BU2900 2sk1058 equivalent BUZ905D 2SJ56 HITACHI BUZ906D BUZ906DP 2SK135 audio amplifier 2sk135 semelab 2SJ56 magnatec BUZ900D BUZ901 semelab BUZ900P 2sJ50 mosfet BUZ901P lateral mosfet audio amplifier 2sk135 audio application mosfet cross reference 2SJ56 2sk176 HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET TEXT
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