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Part : BUZ80FI Supplier : STMicroelectronics Manufacturer : Bristol Electronics Stock : 1,000 Best Price : $1.1021 Price Each : $2.6880
Part : BUZ81 Supplier : Infineon Technologies Manufacturer : Chip One Exchange Stock : 30,478 Best Price : - Price Each : -
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BUZ84A Datasheet

Part Manufacturer Description PDF Type
BUZ84A Philips Semiconductors PowerMOS Transistor Original
BUZ84A Motorola Switchmode Datasheet Scan
BUZ84A Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan
BUZ84A N/A Shortform Datasheet & Cross References Data Scan
BUZ84A N/A Semiconductor Master Cross Reference Guide Scan
BUZ84A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BUZ84A N/A FET Data Book Scan
BUZ84A N/A Shortform Data and Cross References (Misc Datasheets) Scan
BUZ84A Siemens Power Transistors Scan

BUZ84A

Catalog Datasheet MFG & Type PDF Document Tags

BUZ84A

Abstract: PowerMOS transistor_ BUZ84A_ | N AUER PHILIPS/DISCRETE ObE D â , transistor T T m ER PHILIPS/DISCRETE _ ObE D BUZ84A_ â  ( 3 ,   _ bbS3T31 0014708 4 â  T-39-13 394 ] PowerMOS transistor BUZ84A_ , : refer to Mounting instructions for T03 envelopes. 389 PowerMOS transistor BUZ84A N AMER , transistor N AUER PHILIPS/DISCRETE BUZ84A OhE D hbS3131 D Q m 7 Q b â¡ T-39-13 Fig.3 Fig
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OCR Scan
S3131 S3T31

BUZ84A

Abstract: D147D PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ84A ObE D bhSBTBl 0014703 S Tâ'"T^I^iS July , Tj Junction temperature - - 150 °c BUZ84A THERMAL RESISTANCES From junction to mounting base From , BUZ84A N AMER PHILIPS/DISCRETE OhE D bbS3T31 QQl.M7Gb 0 p= 0,9 p s lOOps 1 ms 10 ms 100 ms 5 101 5 , transistor BUZ84A N AMER PHILIPS/DISCRETE DbEJ>_|_tbSBT31_£D147D7_2 T-39-13 n rds(on , i i 393 This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ84A N
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OCR Scan
D147D MC 140 transistor V103 001470T

BUZ84

Abstract: BUZ84A TECHNICAL DATA SEMICONDUCTOR BUZ84 BUZ84A TMOS POWER MOSFETs 5.3 and 6 AMPERES rDS(on) = 1-5 and 2 OHMS 800 VOLTS MOTOROLA Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications , Range T ç = 25°C T c = 100°C Symbol V DSS vdgr BUZ84 800 800 ± 20 5.3 3.3 21 125 BUZ84A , MTM6N85 are applicable for this device. MOTOROLA TMOS POWER MOSFET DATA BUZ84, BUZ84A ELECTRICAL
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OCR Scan

BUZ54

Abstract: s 271 5A SIEM EN S SIPMOS" Leistungstransistoren N-Kanal-Anreicherungstypen Typ Type BUZ 78 BUZ 80 BUZ80A BUZ 81 BUZ 84 BUZ84A BUZ 305 BUZ 307 BUZ 308 BUZ 355 BUZ 356 BUZ 50A BUZ 50B BUZ 50C BUZ 51 BUZ53A BUZ 54 BUZ54A BUZ 310 BUZ 311 BUZ 312 BUZ 357 BUZ 358 W d s V 800 800 800 800 800 800 800 800 800 800 800 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 ^D S(on)m ax SIPMOS® Power Transistors N channel enhancement types ¡o A 1.5 2.6 3.0 4.0 5.3 6.0 7.5 3.0 2.6 6.0 5.0 2.5 2.0 2.3 3.4 2.6
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OCR Scan
C67078-S1318-A2 C67078-S1010-A2 C67078-S1010-A3 BUZ54 s 271 5A BUZ357 C67078-A1309-A2 C67078-A1309-A3 C67078-S1345-A2 C67078-A1013-A2 C67078-A1013-A3

2N4351 MOTOROLA

Abstract: MRF966 GnrlElec/GE GnrlElec/GE GnrlElec/GE GnrlElec/GE GEllntersil Sillconix IRF612 2SK411 BUZ84A IRF420 2SK412
Space Power Electronics
Original
2SK355 2N4351 MOTOROLA MRF966 2N3819 MOTOROLA BFS28 3SK124 3SK45 IRF241 2SK357 BUZ30 BUZ43A IRF623

BUZ84A

Abstract: TO-204AA Vdc pF pF pF 4.0 100 0.25 1.0 Page 1 of 2 TYPE: BUZ84A Drain Source Diode Characteristics
Semiconductor Technology
Original
TO-204AA

A1306 TRANSISTOR

Abstract: t a1306 ¡ A1013-A2 BUZ84A 6 1 1.5 125 A1013-A3 BUZ2201» 6.5 1 1.5 125 â¡ A1103-A2 BUZ 2211) 5.5 1 2 125 m
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OCR Scan
A1316-A3 A1328-A3 A1306 TRANSISTOR t a1306 A1306A A3206A A1309 T0-220 C67078- A1300-A2 A1329-A2 A1301-A2 BUZ11

BUZ90

Abstract: BSI07A 125 ±100 ±20 250 800 2. 1 4 i 1 3 10 3 1.8 3 5000 350 140 25 T0-204AA BUZ84A MOT N 800 ±20 6.0
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OCR Scan
BSI07A BS170 BSS123 BUZ71 BUZ71A BUZ73 BUZ90 251C T0-220AB

MTH6N85

Abstract: 950p to-247 package ) CHM75T-M157 (A) BUZ355 BUZ355 BUZ355 BUZ84A 2N6913A 2N6913A 2N6913A IXTH6N80A (A) IXTM6N80A (A) IXTH6N80
Short Form Catalog
Original
2SK351 MTH6N85 950p to-247 package 21n60n SIEMENS 800 IRFAF30 BUZ308 BUZ80 IRFBE30 BUZ83 BUZ361 BUZ307

si 13001

Abstract: buz90 125 ±100 ±20 250 800 2. 1 4 i 1 3 10 3 1.8 3 5000 350 140 25 T0-204AA BUZ84A MOT N 800 ±20 6.0
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OCR Scan
si 13001 buzh F133 T0-204 BSR72 BSR76 BSR78 BSR80 BSR81

BUZ171

Abstract: TO-236-AA 125 ±100 ±20 250 800 2. 1 4 i 1 3 10 3 1.8 3 5000 350 140 25 T0-204AA BUZ84A MOT N 800 ±20 6.0
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OCR Scan
BUZ171 TO-236-AA BUZ10 8UZ63 BUZ64 BUZ72A BUZ74 BUZ76

irf113

Abstract: IRF224 125 ±100 ±20 250 800 2. 1 4 i 1 3 10 3 1.8 3 5000 350 140 25 T0-204AA BUZ84A MOT N 800 ±20 6.0
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OCR Scan
IRF034 IRF035 irf113 IRF224 IRF123 1RF9Z32 1RF48 1RF045 T0-204AE

2N6155

Abstract: BUZ24 125 ±100 ±20 250 800 2. 1 4 i 1 3 10 3 1.8 3 5000 350 140 25 T0-204AA BUZ84A MOT N 800 ±20 6.0
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OCR Scan
2N6155 BUZ24 4900 SIEMENS bup 314 siemens Ni 1000 SSS6N60 IBF123

irf9110

Abstract: SOT-123 125 ±100 ±20 250 800 2. 1 4 i 1 3 10 3 1.8 3 5000 350 140 25 T0-204AA BUZ84A MOT N 800 ±20 6.0
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OCR Scan
irf9110 SOT-123 8UZ11 BUZ63 IRF9122 irfl33 1RF120 IRFI21 1RF122

MFE9200

Abstract: BUZ84A BUZ84A 6 3-83 750 7 1.5 MTM3N75 3 75 3-417 600 2.8 3 2N6823 3-48 2.5 1.5 MTM3N60 3-412 1.8 6
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OCR Scan
MFE9200 BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet DK101/D MTP2955 T-97-60 0020-H

BUZ901P

Abstract: BUZ900P Switching ID: 2.3 Case Style: TO-204AA/TO-3 Polarity: Industry Type: BUZ83A STI Type: BUZ84A Notes , : BUZ84A STI Type: 2N5867 Notes: Polarity: PNP Power Dissipation: 87 Tj: VCEV: VCEO: 60 hFE min: 20
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Original
BUZ345 DTS410 BUZ901P BUZ900P BUZ900 buz90a d44c3 BUZ77 BUZ341 BUZ344 BUZ346 BUZ346S2 DTS4074

FET BFW10

Abstract: KP101A BUZ74A BUZ76 BUZ76A BUZ78 BUZ80 BUZ80A BUZ83 BUZ83A BUZ84 BUZ84A book S9 S9 S9 S9 S9 S9 S9 S9 S9 S9 S9 S9
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OCR Scan
BA583 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BA220 BA221 BA223 BA281 BA314 BA315

35n05

Abstract: mje12007 PowerMOS transistor_ BUZ84A_ | N AUER PHILIPS/DISCRETE ObE D â , : refer to Mounting instructions for T03 envelopes. 389 PowerMOS transistor BUZ84A N AMER , transistor T T m ER PHILIPS/DISCRETE _ ObE D BUZ84A_ â  ( 3 , transistor N AUER PHILIPS/DISCRETE BUZ84A OhE D hbS3131 D Q m 7 Q b â¡ T-39-13 Fig.3 Fig , PowerMOS transistor BUZ84A N AMER P H I L I P S / D I S CR E T E DbE D â  b b S BTBl 0 0 1
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OCR Scan
35n05 mje12007 Motorola Switchmode 1 special 20N15 AN803 motorola ur3060

Q2N4401

Abstract: D1N3940 PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ84A ObE D bhSBTBl 0014703 S Tâ'"T^I^iS July , Tj Junction temperature - - 150 °c BUZ84A THERMAL RESISTANCES From junction to mounting base From , BUZ84A N AMER PHILIPS/DISCRETE OhE D bbS3T31 QQl.M7Gb 0 p= 0,9 p s lOOps 1 ms 10 ms 100 ms 5 101 5 , transistor BUZ84A N AMER PHILIPS/DISCRETE DbEJ>_|_tbSBT31_£D147D7_2 T-39-13 n rds(on , i i 393 This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ84A N
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Original
Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 RD91EB

IRFD1Z3 equivalent

Abstract: TP8N20 Vdc pF pF pF 4.0 100 0.25 1.0 Page 1 of 2 TYPE: BUZ84A Drain Source Diode Characteristics
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OCR Scan
IRFD1Z3 equivalent TP8N20 siemens semiconductor manual 8N60 equivalent TP8N10 irf8408 4000D 4001D L001A 4501D 4502D P002A
Abstract: ¡ A1013-A2 BUZ84A 6 1 1.5 125 A1013-A3 BUZ2201» 6.5 1 1.5 125 â¡ A1103-A2 BUZ 2211) 5.5 1 2 125 m -
OCR Scan
23SLG5

tlo 84

Abstract: BUz840 ) CHM75T-M157 (A) BUZ355 BUZ355 BUZ355 BUZ84A 2N6913A 2N6913A 2N6913A IXTH6N80A (A) IXTM6N80A (A) IXTH6N80
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OCR Scan
VMT05152 tlo 84 BUz840 Si102 84/BUZ
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