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BUZ80A Datasheet

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BUZ80A N/A Shortform Datasheet & Cross References Data
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1 pages,
84.73 Kb

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BUZ80A Motorola Switchmode Datasheet
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1 pages,
56.98 Kb

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BUZ80AFI N/A Shortform Datasheet & Cross References Data
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1 pages,
84.73 Kb

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BUZ 80A Infineon Technologies Conventional Power MOS Transistors
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9 pages,
141.81 Kb

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BUZ80A N/A Semiconductor Master Cross Reference Guide
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1 pages,
116.44 Kb

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BUZ80A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data)
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1 pages,
117.92 Kb

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BUZ80A N/A FET Data Book
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1 pages,
58.95 Kb

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BUZ80A Infineon Technologies N-Channel SIPMOS Power Transistor, 800V, TO-220, 3.00 ?, 3.0A
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9 pages,
141.8 Kb

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BUZ80A Philips Semiconductors / NXP Semiconductors PowerMOS Transistor
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7 pages,
217.12 Kb

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BUZ80A Siemens Semiconductors
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7 pages,
1066.96 Kb

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BUZ80A

Catalog Datasheet Results Type PDF Document Tags
Abstract: BUZ80A ® N - CHANNEL 800V - 2.5 - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE V DSS s s s s s s s R DS(on) ID 800 V BUZ80A , ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it BUZ80A V DS V DGR V GS , 1998 1/9 BUZ80A THERMAL DATA TO-220 R thj -case Thermal Resistance Junction-case Max , 1100 150 35 pF pF pF ® BUZ80A ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON ... Original
datasheet

9 pages,
99.67 Kb

BUZ80A BUZ80A abstract
datasheet frame
Abstract: BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS( on) ID BUZ80A BUZ80AFI 800 V 800 V < 3 < 3 3.8 A 2.4 A s s s s s s s TYPICAL , Parameter Value BUZ80A VD S V DG R V GS Unit BUZ80AFI Drain-source Voltage (V GS = 0) 800 , April 1993 1/10 BUZ80A/BUZ80AFI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl , BUZ80A/BUZ80AFI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on ... Original
datasheet

10 pages,
106.1 Kb

BUZ80AF BUZ80A BUZ80AFI BUZ80A abstract
datasheet frame
Abstract: BUZ80A ® N - CHANNEL 800V - 2.5 - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE V DSS s s s s s s s R DS(on) ID 800 V BUZ80A , BUZ80A Drain-source Voltage (V GS = 0) 800 V Drain- gate Voltage (R GS = 20 k) 800 V , 1998 1/9 BUZ80A THERMAL DATA TO-220 R thj -case Thermal Resistance Junction-case Max , 1 Unit S 1100 150 35 pF pF pF ® BUZ80A ELECTRICAL CHARACTERISTICS (continued ... Original
datasheet

9 pages,
116.96 Kb

BUZ80a equivalent BUZ80A BUZ80A abstract
datasheet frame
Abstract: SIEMENS SIPMOS ® Power Transistor BUZ80A · N channel · Enhancement mode Type BUZ 80A , 25°C, unless otherwise specified Parameter BUZ80A Symbol min. Values typ. max. Unit , Dynamic Characteristics Transconductance ^bs9ls BUZ80A Values typ. max. Unit S 1 1.8 pF 1600 , /ms Orr írr 1.8 Vsd 1.05 1.3 IsM 12 Values typ. max. BUZ80A Unit A 3 V M S M C . , current fe - /(7b) parameter: VGS > 10 V BUZ80A Safe operating area t = ñ VDs) parameter: D = 0.01 ... OCR Scan
datasheet

9 pages,
128.46 Kb

BUZ80A BUZ80A abstract
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Abstract: 7^2^537 DOMSbBT G7b - SGTH ¿7/ SGS-THOMSON BUZ80A i[LII£TO«§ BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Vdss RdS(OII) Id BUZ80A BUZ80AFI 800 V 800 V < 3 Q < 3 n 3.8 A 2.4 A , SCHEMATIC DIAGRAM 0 (2) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUZ80A BUZ80AFI Vos , operating area April 1993 1/7 127 BUZ80A/BUZ80AFI - 7^237 0D4Sb4G BTfi BISGTH THERMAL DATA TO-220 , rrz SCS-IHOMSON # fsiie«s,iiCT(siswies 128 7CÏ2,:Î237 ÜGMSbm 72i* -SGTH BUZ80A/BUZ80AFI ... OCR Scan
datasheet

7 pages,
340.01 Kb

dg45b BUZ80AF BUZ80A BUZ80AFI datasheet abstract
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Abstract: Copyrighted By Its Respective Manufacturer PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ80A OLE D , BUZ80A N AMER PHILIPS/DISCRETE ObE D - bfa53131 0Ü14SS1 14SS1 - - REVERSE DIODE RATINGS AND CHARACTERISTICS , ßC 237 ft_ This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ80A , Its Respective Manufacturer PowerMOS transistor BUZ80A N AMER PHILIPS/DISCRETE DL.E D "*0S (ON , 23? This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ80A N AMER ... OCR Scan
datasheet

7 pages,
217.12 Kb

V103 T0220AB V103 TRANSISTOR BUZ80A datasheet abstract
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Abstract: SGS-THOMSON £j ï ULKgraM OeS BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E BUZ80A BUZ80AFI V dss RDS(on) Id 800 V 800 V , by safe operating area April 1993 1/10 BUZ80A/B UZ80AFI UZ80AFI THERMAL DATA TO -220 R th j- c a , 2/10 * 7 # BSIieR®BLIlTfMiaieS T SGS-THOMSON BUZ80A/B UZ80AFI UZ80AFI ELECTRICAL CHARACTERISTICS , Operating Areas For ISOWATT22Q ISOWATT22Q Package * 7 # BSIieR®BLIlTfMiaieS H Z T SGS-THOMSON BUZ80A/B ... OCR Scan
datasheet

10 pages,
339.56 Kb

BUZ80A BUZ80AFI BUZ80A abstract
datasheet frame
Abstract: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ80A CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain ­ Source Voltage Drain ­ Gate Voltage Drain Current ­ Continuous Drain Current ­ Pulsed Gate ­ Source Voltage , 25V, f = 1 MHz pF 150 pF 55 pF Page 1 of 2 TYPE: BUZ80A Drain Source Diode ... Original
datasheet

2 pages,
25.17 Kb

BUZ80A BUZ80A abstract
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Abstract: 3/7 123 BUZ80A/Z80AF Z80AF' Thormal Impaöeance lrorTO-220 Package Thermal Impedance For , SGS-THOMSON Z T ê BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80A BUZ80AFI V d ss 800 V 800 V FtDS(on) 3 Ü 3 Li Id 3.8 A 2.4 A . . . . . . AVALANCHE , eter BUZ80A V ds V dgr V gs Id Id I d m (« ) Value BUZ80AFI 800 800 ± 20 3.8 2.3 15 100 0.8 -65 to , h 199 2 °c 1/7 121 BUZ80A/BUZ80AFI THERMAL DATA T 0 -2 2 0 Rthj-case Rthj-amb ... OCR Scan
datasheet

7 pages,
203.47 Kb

BUZ80A BUZ80AF BUZ80AFI BUZ80A abstract
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Abstract: BUZ80A ELECTRICAL C H A R A C TE R IS TIC S - c o n tin u e d (Tq = 25C C unless otherw ise noted) j , 0110 C055 0 255 0050 - 0.080 CASE 221A-04 TO-22ÛAB MOTOROLA TMOS POWER MOSFET DATA BUZ80A , E M P E R A T U R E (; C) MOTOROLA TMOS POWER MOSFET DATA BUZ80A SAFE OPERATING AREA ... OCR Scan
datasheet

4 pages,
125.63 Kb

datasheet abstract
datasheet frame
Abstract: BUZ80A SIPMOS® Power Transistors BUZ 80 BUZ 80 A q N channel q Enhancement mode Type VDS ID RDS (on) Package 1) Ordering Code BUZ 80 800 V 2.6 A 4.0 TO-220 AB C67078-A1309-A2 C67078-A1309-A2 BUZ 80 A 800 V 3.0 A 3.0 TO-220 AB C67078-A1309-A3 C67078-A1309-A3 Maximum Ratings Parameter Symbol BUZ Unit 80 80 A Continuous drain current, TC = 50 °C ID 2.6 3.0 Pulsed drain current, TC = 25 °C ID puls 10 12 Drain-source voltage VD ... Original
datasheet

8 pages,
507.89 Kb

C67078-A1309-A3 BUZ80 datasheet abstract
datasheet frame
Abstract: Pulsed reverse drain current Tc = 25 °C BUZ 80 BUZ80A Diode forward on-voltage / s = 6.0 A, Vgs = 0 V ... OCR Scan
datasheet

9 pages,
183.82 Kb

datasheet abstract
datasheet frame
Abstract: SIEMENS SIPMOS® Power MOS Transistors BUZ 80 BU Z8 0A BUZ 307 BU Z308 VDS = 800 V /q = 2.6 . 3.0 A ^DS(on) = 3.0 . 4.0 Q · · · N channel Enhancement mode Packages: TO-220AB TO-218AA (TOP-3) ') Type BUZ 80 BUZ 80 A BUZ 307 BUZ 308 Ordering code C67078-A1309-A2 C67078-A1309-A2 C67078-A1309-A3 C67078-A1309-A3 C67078-A3100-A2 C67078-A3100-A2 C67078-A3109-A2 C67078-A3109-A2 Maximum Ratings 0 0 D O o c N Parameter Drain-source voltage Drain-gate voltage, flG S = 20 kQ Gate-source voltage Continuous drain current, Tc = 50 °C Pulsed drain current, ... OCR Scan
datasheet

8 pages,
201.82 Kb

datasheet abstract
datasheet frame
Abstract: BUZ 80 A SIPMOS ® Power Transistor · N channel · Enhancement mode · Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 80 A 800 V 3.6 A 3 TO-220 AB C67078-S1309-A3 C67078-S1309-A3 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 26 °C Values Unit A 3.6 Pulsed drain current IDpuls TC = 25 °C 14.5 Avalanche current,limited by Tjmax IAR 3.1 Avalanche en ... Original
datasheet

9 pages,
141.8 Kb

datasheet abstract
datasheet frame
Abstract: BUZ 80A SIPMOS ® Power Transistor · N channel · Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 80A 800 V 3A 3 TO-220 AB C67078-A1309-A3 C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage RGS = 20 k Values Unit 800 V 800 ID Continuous drain current TC = 50 °C A 3 IDpuls Pulsed drain current TC = 25 °C 12 ... Original
datasheet

9 pages,
176.66 Kb

C67078-A1309-A3 BUZ 840 transistor vds rds 12 id 80a to220 BUZ 80A A1309 datasheet abstract
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BUZ80A N-CHANNEL 800V - 2.5 OHM - 3.8A - TO-220 FAST POWER MOS TRANSISTOR Document following formats: Portable Document Format and Raw Text Format BUZ80A N - CHANNEL 800V - 2.5 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUZ80A V DS Drain-source Voltage (V GS = 0) 800 V V Temperature 150 o C ( w ) Pulse width limited by safe operating area TYPE V DSS R DS(on) I D BUZ80A 800 V V GS = 0 1100 150 35 pF pF pF [ BUZ80A 2/9 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
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STMicroelectronics 02/04/1999 7.54 Kb HTM 2955-v1.htm
BUZ80A N-CHANNEL 800V - 2.5 OHM - 3.8A - TO-220 FAST POWER MOS TRANSISTOR Document following formats: Portable Document Format and Raw Text Format BUZ80A N - CHANNEL 800V - 2.5 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUZ80A V DS Drain-source Voltage (V GS = 0) 800 V V Temperature 150 o C ( w ) Pulse width limited by safe operating area TYPE V DSS R DS(on) I D BUZ80A 800 V V GS = 0 1100 150 35 pF pF pF [ BUZ80A 2/9 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
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STMicroelectronics 14/06/1999 7.51 Kb HTM 2955-v2.htm
wvannot xfn BUZ80A Document Format Size Document Number Date Update Pages BUZ80A N - CHANNEL 800V - 2.5 W - 3.8A - TO-220 FAST POWER MOS TRANSISTOR n TYPICAL R DS DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUZ80A V DS Drain-source operating area TYPE V DSS R DS(on) I D BUZ80A 800 V < 3 W 3.8 A November 1998 1 2 = 0 1100 150 35 pF pF pF [ BUZ80A 2/9 ELECTRICAL CHARACTERISTICS (continued
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STMicroelectronics 18/12/2000 10.43 Kb HTM 2955-v3.htm
TO-220 FAST POWER MOS TRANSISTOR BUZ80A Document Format Size Document 09/11/1998 9 Raw Text Format BUZ80A N - CHANNEL 800V - 2.5 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUZ80A V DS Drain-source Voltage (V GS = 0 ) Pulse width limited by safe operating area TYPE V DSS R DS(on) I D BUZ80A 800 V < 3 W 3.8 A Capacitance V DS = 25 V f = 1 MHz V GS = 0 1100 150 35 pF pF pF [ BUZ80A 2/9
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STMicroelectronics 20/10/2000 10 Kb HTM 2955.htm
BUZ80A N-CHANNEL 800V - 2.5 OHM - 3.8A - TO-220 FAST POWER MOS TRANSISTOR Document Number: 2955 Date Update: 09/11/98 Pages: 9 The document is available in the following formats: Portable Document Format and Raw Text Format
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STMicroelectronics 14/06/1999 0.91 Kb HTM 2955-v5-vx2.htm
BUZ80A , BUZ80AFI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Document Number: 2955 Date Update: 9/4/94 Pages: 10 The document is available in the following formats: Portable Document Format and Raw Text Format (for text retrieval only) The document is also available compressed with PKZIP® in the following formats: Portable Document Format , PrinterLeaf and PostScript
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STMicroelectronics 16/04/1996 1.44 Kb HTM 2955-v5.htm
Datasheet N-CHANNEL 800V - 2.5 OHM - 3.8A - TO-220 FAST POWER MOS TRANSISTOR BUZ80A Document Format Size Document Number Date Update Pages Portable Document Format 2955 09/11/1998 9 Raw Text Format
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/2955-v3.htm
STMicroelectronics 20/10/2000 2.9 Kb HTM 2955-v3.htm
BUZ80A , BUZ80AFI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Document Number: 2955 Date Update: 9/4/94 Pages: 10 The document is available in the following formats: Portable Document Format and Raw Text Format
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/2955.htm
STMicroelectronics 06/02/1998 0.95 Kb HTM 2955.htm
BUZ80A N-CHANNEL 800V - 2.5 OHM - 3.8A - TO-220 FAST POWER MOS TRANSISTOR Document Number: 2955 Date Update: 09/11/98 Pages: 9 The document is available in the following formats: Portable Document Format and Raw Text Format
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/2955-v2.htm
STMicroelectronics 14/06/1999 0.91 Kb HTM 2955-v2.htm
BUZ80A N-CHANNEL 800V - 2.5 OHM - 3.8A - TO-220 FAST POWER MOS TRANSISTOR Document Number: 2955 Date Update: 09/11/98 Pages: 9 The document is available in the following formats: Portable Document Format and Raw Text Format
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/2955-v1.htm
STMicroelectronics 31/03/1999 0.93 Kb HTM 2955-v1.htm

Fairchild Cross Reference Results

Fairchild Part Orderable Industry Part Manufacturer Type Family Description
FQP2N60C FQP2N60C Buy BUZ80A Buy Infineon (Siemens) Close Power MOSFET 600V N-Channel Advance QFET C-Series
FQP3N60C FQP3N60C Buy BUZ80A Buy Infineon (Siemens) Close Power MOSFET 600V N-Channel MOSFET QFET
FQP3N80C FQP3N80C Buy BUZ80A Buy Infineon (Siemens) Close Power MOSFET 800V N-Channel Advance QFET C-Series
FQP4N90C FQP4N90C Buy BUZ80A Buy Infineon (Siemens) Close Power MOSFET 900V N-Channel Advance QFET C-Series

Ixys Corp. Cross Reference Results

Ixys Corp. Part Ixys Description Industry Part Manufacturer Description Type
IXFP7N80P Buy VDSS (V)=800, ID@TC=25°C(A)=7, RDS(on) max @TJ=25°C(Ohm)=1.4 BUZ80A Buy STMicroelectronics VDSS (V)=800, ID@TC=25°C(A)=3.8, RDS(on) max @TJ=25°C(Ohm)=2.5 Close

NTE Electronics Cross Reference Results

NTE Electronics Part Industry Part
NTE2387 Buy BUZ80A Buy
NTE2387 Buy BUZ80AFI Buy

STMicroelectronics Cross Reference Results

STMicroelectronics Part Industry Part Manufacturer Type Description
STP4NA80 Buy BUZ80A Buy - Replacement Power MOSFETs
STP4NA80FI Buy BUZ80AFI Buy - Replacement Power MOSFETs
STP4NB80 Buy BUZ80A Buy Infineon Technologies Nearest Preferred Power MOSFETs - Very High Voltage

Misc. Cross Reference Results

Part Similar Part Notes
BUZ80A Buy 2SK513 Buy
BUZ80A Buy 2SK792 Buy
BUZ80A Buy BUZ81 Buy
BUZ80A Buy STP3NK80Z Buy
BUZ80A Buy STP4NK80Z Buy
BUZ80A Buy STP5NK80Z Buy
BUZ80AFI Buy 2SK1356 Buy
BUZ80AFI Buy 2SK1460 Buy