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BUZ80A Datasheet

Part Manufacturer Description PDF Type
BUZ 80A Infineon Technologies Conventional Power MOS Transistors Original
BUZ80A Infineon Technologies N-Channel SIPMOS Power Transistor, 800V, TO-220, 3.00 ?, 3.0A Original
BUZ80A Philips Semiconductors PowerMOS Transistor Original
BUZ80A Siemens Original
BUZ80A Siemens SIPMOS Power Transistor (N channel Enhancement mode) Original
BUZ80A STMicroelectronics N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS Original
BUZ80A STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original
BUZ80A Toshiba Power MOSFETs Cross Reference Guide Original
BUZ80A Motorola Switchmode Datasheet Scan
BUZ80A N/A Shortform Datasheet & Cross References Data Scan
BUZ80A N/A Semiconductor Master Cross Reference Guide Scan
BUZ80A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BUZ80A N/A FET Data Book Scan
BUZ80A Siemens Power Transistors Scan
BUZ80AF N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BUZ80AFI STMicroelectronics N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS Original
BUZ80AFI Toshiba Power MOSFETs Cross Reference Guide Original
BUZ80AFI N/A Shortform Datasheet & Cross References Data Scan
BUZ80AFI N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan

BUZ80A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS( on) ID BUZ80A BUZ80AFI 800 V 800 V < 3â"¦ < 3â"¦ 3.8 A 2.4 A s s s s s s s , RATINGS Symbol Parameter Value BUZ80A VD S V DG R V GS Unit BUZ80AFI Drain-source , width limited by safe operating area April 1993 1/10 BUZ80A/BUZ80AFI THERMAL DATA TO-220 R , . Max. 1 Unit S 1100 150 55 pF pF pF BUZ80A/BUZ80AFI ELECTRICAL CHARACTERISTICS STMicroelectronics
Original
ISOWATT220 P011G BUZ80A/BUZ80AFI
Abstract: BUZ80A ® N - CHANNEL 800V - 2.5 - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE V DSS s s s s s s s R DS(on) ID 800 V BUZ80A , ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it BUZ80A V DS V DGR V GS , 1998 1/9 BUZ80A THERMAL DATA TO-220 R thj -case Thermal Resistance Junction-case Max , 1100 150 35 pF pF pF ® BUZ80A ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON STMicroelectronics
Original
P011C
Abstract: BUZ80A N - CHANNEL 800V - 2.5CI - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE V dss â  . . . . . . RdS(oii) Id 800 V BUZ80A < 3 Q. 3.8 A TYPICAL RDS(on) = 2.5  , alue Unit BUZ80A V ds V dgr V gs 800 V D rain- gate V oltage (R gs = 20 k£2) 800 , 1/9 BUZ80A THERMAL DATA T O -220 R th j- c a s e Therm al Max 1.25 °C/W ^thj-a , Unit S 1 100 150 35 L L LL L L Q Q Q_ _ _ Ciss Coss Crss Pa ram eter BUZ80A -
OCR Scan
GC27160
Abstract: BUZ80A ® N - CHANNEL 800V - 2.5 - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE V DSS s s s s s s s R DS(on) ID 800 V BUZ80A , BUZ80A Drain-source Voltage (V GS = 0) 800 V Drain- gate Voltage (R GS = 20 k) 800 V , 1998 1/9 BUZ80A THERMAL DATA TO-220 R thj -case Thermal Resistance Junction-case Max , Unit S 1100 150 35 pF pF pF ® BUZ80A ELECTRICAL CHARACTERISTICS (continued STMicroelectronics
Original
BUZ80a equivalent DD 127 D TRANSISTOR
Abstract: SIEMENS SIPMOS ® Power Transistor BUZ80A · N channel · Enhancement mode Type BUZ 80A , 25°C, unless otherwise specified Parameter BUZ80A Symbol min. Values typ. max. Unit , . Dynamic Characteristics Transconductance ^bs9ls BUZ80A Values typ. max. Unit S 1 1.8 pF 1600 , írr 1.8 Vsd 1.05 1.3 IsM 12 Values typ. max. BUZ80A Unit A 3 V M S M C . 12 . , ) parameter: VGS > 10 V BUZ80A Safe operating area t = ñ VDs) parameter: D = 0.01, Tc = 25 -
OCR Scan
C67078-A1309-A3
Abstract: SGS-THOMSON £j ï ULKgraM OeS BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E BUZ80A BUZ80AFI V dss RDS(on) Id 800 V 800 V , by safe operating area April 1993 1/10 BUZ80A/B UZ80AFI THERMAL DATA TO -220 R th j- c a , * 7 # BSIieR®BLIlTfMiaieS T SGS-THOMSON BUZ80A/B UZ80AFI ELECTRICAL CHARACTERISTICS (continued , For ISOWATT22Q Package * 7 # BSIieR®BLIlTfMiaieS H Z T SGS-THOMSON BUZ80A/B UZ80AFI -
OCR Scan
UZ80A BUZ80A/B ATT220
Abstract: N AMER PHILIPS/DISCRETE ObE D â  BUZ80A_ _ LbS3131'0Q145S1 f â'â  l , _ _ BUZ80A_ N AMER PHILIPS/DISCRETE DbE T â T1^53c 131 OOIMSSM 3 â , : refer to Mounting instructions for TO220 envelopes. 235 a PowerMOS transistor BUZ80A N , ns - nC PowerMOS transistor N AflER PHILIPS/DISCRETE _BUZ80A , _ N AMER PHILIPS/DISCRETE BUZ80A DbE D â  bbS3T31 0014553 1 â  â â â ft -4 0 -
OCR Scan
014S4C 0014S52 T-39-11 S3T31
Abstract: BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS( on) ID BUZ80A BUZ80AFI 800 V 800 V < 3 < 3 3.8 A 2.4 A s s s s s s s TYPICAL , Parameter Value BUZ80A VD S V DG R V GS Unit BUZ80AFI Drain-source Voltage (V GS = 0) 800 , April 1993 1/10 BUZ80A/BUZ80AFI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl , BUZ80A/BUZ80AFI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on STMicroelectronics
Original
Abstract: 7^2^537 DOMSbBT G7b â  SGTH ¿7/ SGS-THOMSON BUZ80A i[LII£TOǤ BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Vdss RdS(OII) Id BUZ80A BUZ80AFI 800 V 800 V < 3 Q < 3 n 3.8 A , BUZ80A BUZ80AFI Vos Drain-source Voltage (Vgs = 0) 800 V Vdgr Drain- gate Voltage (Rgs = 20 k£2) 800 , '¢) Pulse width limited by safe operating area April 1993 1/7 127 BUZ80A/BUZ80AFI â  7^237 0D4Sb4G BTfi , 72i* â SGTH BUZ80A/BUZ80AFI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter -
OCR Scan
k2800 dg45b Y125 ISQWATT220 RG-50 SC03980
Abstract: BUZ80A OLE D ^53^31 001455G b RATINGS T-39-11 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vds , PowerMOS transistor BUZ80A N AMER PHILIPS/DISCRETE ObE D â  bfa53131 0Ã14SS1 Ã â  REVERSE DIODE , transistor BUZ80A N ANER PHILIPS/DISCRETE ObE D ^53131 DDIHSSS T T-39-11 80 W P 70 D j 60 50 40 30 20 10 , transistor BUZ80A N AMER PHILIPS/DISCRETE DL.E D "*0S (ON) Fig. 6 Typical drain-source on-state , . 23? This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ80A N AMER -
OCR Scan
T0220AB V103 TRANSISTOR buz80 V103 T0220
Abstract: -220 Package Safe Operating Areas For ISOWATT22Q Package SGS-THOMSON 3/7 123 BUZ80A/Z80AF' , SGS-THOMSON Z T ê BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80A BUZ80AFI V d ss 800 V 800 V FtDS(on) 3 Ü 3 Li Id 3.8 A 2.4 A . . . . . . AVALANCHE , 121 BUZ80A/BUZ80AFI THERMAL DATA T 0 -2 2 0 Rthj-case Rthj-amb Rthc-sink ISOW ATT22Û 3.12 , BUZ80A/BUZ80AFI Turn-on Current Slope Turn-off Drain-source Voltage Slope 0 50 100 150 -
OCR Scan
ISOWATT22C BUZ8CIA/BUZ80AFI GCS760 GC2Q75Q SCQ5970
Abstract: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ80A CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain ­ Source Voltage Drain ­ Gate Voltage Drain Current ­ Continuous Drain Current ­ Pulsed Gate ­ Source Voltage , 25V, f = 1 MHz pF 150 pF 55 pF Page 1 of 2 TYPE: BUZ80A Drain Source Diode Semiconductor Technology
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Abstract: MOTOROLA SC XSTRS/R F m E D I OQöTbMS b3b?aSM 3 I MOTOROLA â i SEMICONDUCTOR TECHNICAL DATA BUZ80A P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-Mode Silicon Gate This T M O S Power FET is designed for high voltage, high speed, low loss power switching , büâ'ifc.Mb â l BUZ80A EL E C T R IC A L C H A R A C T E R IS T IC S â'" continued D e = 25°C unless , MOTOROLA SC tfS T R S /R F 11,5 D I t 3 t 7 2 S 1 /ODfi^bia â  ( T BUZ80A S A F E -
OCR Scan
AN569
Abstract: 55 · BUZ308 BUZ80 BUZ80 BUZ80 IRFBE30 BUZ83 BUZ83 BUZ83 BUZ361 BUZ307 BUZ80A BUZ80A BUZ80A Short Form Catalog
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2SK351 21n60n 950p to-247 package IRFAF30 MTH6N85 SIEMENS 800 IXTM3N80A IXTP3N80A 2SK513 2SK415 2SK796 IXTM3N80
Abstract: BUZ80A ELECTRICAL C H A R A C TE R IS TIC S - c o n tin u e d (Tq = 25C C unless otherw ise noted) j , 0110 C055 0 255 0050 - 0.080 CASE 221A-04 TO-22ÛAB MOTOROLA TMOS POWER MOSFET DATA BUZ80A , E M P E R A T U R E (; C) MOTOROLA TMOS POWER MOSFET DATA BUZ80A SAFE OPERATING AREA -
OCR Scan
Abstract: BUZ90A BUZ93 BUZ92 BUZ77B BUZ77A BUZ305 BUZ305 BUZ355 BUZ356 BUZ81 BUZ80A BUZ307 BUZ80 , STP3NA60 STP6NA80 STP5N80 BUZ80A STP5NA80 STP4NA80 STP3NA80 STP2N80 STP5N90 STP5NA90 STP4N90 , IRFBC40 STP5NB60 STP5NB60 STP5NB60 STP3NB60 STP3NB60 STP3NB60 STP6NA80 STP6NB80 BUZ80A STP5NA80 , STP7NB80 STP6NB80 STP5NB80 BUZ80A 5.5 4.7 10 8.6 8 5.8 4.5 3.8 2.5 9 7.2 6.2 5.3 3.6 , -BUZ80A STP3NA80 STP2N80 STU6NA90 STP5NA90 STP4N90 STP3NA90 - STP4NA90 STP4NA100 STP3N100 STMicroelectronics
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STP3N60FI IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L
Abstract: BUZ_BSS-P_Saber.exe BUZ60 BUZ78 BUZ338 BUZ61A BUZ80A BUZ_BSS-P_Saber.exe Saber Simulation Models Last Infineon Technologies
Original
BTS443P SPNA2N80C2 SPP08N80C3 BTS840S2 BTS118D BTS282-Z SIPC69N60C3 P-Channel Depletion Mosfets sipc01n80c2 buz22 SIPC26N60C3 BTS308 BTS409 BTS410-H2 BTS640S2 BTS650P
Abstract: STP5NB60 IRFBC30 STP3NB60 STP7NB80 STP6NB80 STP5NB80 BUZ80A ID(cont) REPLACED 5.5 4.7 10 , STU9NA60 MTP6N60 - STP6NA60 STP4NA60 MTP3N60 - STP3NA60 STP6NA80 STP5NA80 STP4NA80 -BUZ80A STP3NA80 STMicroelectronics
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STP3020L STP4NB90FP STP6NA80FP IRF640 complementary ste38na50 STE45N50 IRF630 complementary STD1NB60 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20
Abstract: BUZ80A BUZ325 BUZ356 BUZ74A BUZ81 BUZ326 TDA16822 ICE2A180 ICE2A265 ICE2A280 CoolMOS Infineon Technologies
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BTS555 SIPC30S2N08 BSP229 SKP15N60 BUP314 SPW20N60S5 equivalent BUZ78 equivalent SIPC26N80C3 SDP06S60 SDP04S60 SDB10S30 BTS550P BTS114A
Abstract: SIEM EN S SIPMOS" Leistungstransistoren N-Kanal-Anreicherungstypen Typ Type BUZ 78 BUZ 80 BUZ80A BUZ 81 BUZ 84 BUZ84A BUZ 305 BUZ 307 BUZ 308 BUZ 355 BUZ 356 BUZ 50A BUZ 50B BUZ 50C BUZ 51 BUZ53A BUZ 54 BUZ54A BUZ 310 BUZ 311 BUZ 312 BUZ 357 BUZ 358 W d s V 800 800 800 800 800 800 800 800 800 800 800 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 ^D S(on)m ax SIPMOS® Power Transistors N channel enhancement types ¡o A 1.5 2.6 3.0 4.0 5.3 6.0 7.5 3.0 2.6 6.0 5.0 2.5 2.0 2.3 3.4 2.6 -
OCR Scan
C67078-S1318-A2 C67078-S1010-A2 C67078-S1010-A3 BUZ54 s 271 5A BUZ357 BUZ,271 C67078-A1309-A2 C67078-S1345-A2 C67078-A1013-A2 C67078-A1013-A3 C67078-S3134-A2
Abstract: BUZ80A ® N - CHANNEL 800V - 2.5 - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE V DSS s s s s s s s R DS(on) ID 800 V BUZ80A , BUZ80A Drain-source Voltage (V GS = 0) 800 V Drain- gate Voltage (R GS = 20 k) 800 V , 1998 1/9 BUZ80A THERMAL DATA TO-220 R thj -case Thermal Resistance Junction-case Max , Unit S 1100 150 35 pF pF pF ® BUZ80A ELECTRICAL CHARACTERISTICS (continued Siemens
Original
BUZ 80
Abstract: BUZ80A ® N - CHANNEL 800V - 2.5 - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE V DSS s s s s s s s R DS(on) ID 800 V BUZ80A , ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it BUZ80A V DS V DGR V GS , 1998 1/9 BUZ80A THERMAL DATA TO-220 R thj -case Thermal Resistance Junction-case Max , 1100 150 35 pF pF pF ® BUZ80A ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON New Jersey Semiconductor
Original
New Jersey Semiconductor
Abstract: SIEMENS SIPMOS ® Power Transistor BUZ80A · N channel · Enhancement mode Type BUZ 80A , 25°C, unless otherwise specified Parameter BUZ80A Symbol min. Values typ. max. Unit , . Dynamic Characteristics Transconductance ^bs9ls BUZ80A Values typ. max. Unit S 1 1.8 pF 1600 , írr 1.8 Vsd 1.05 1.3 IsM 12 Values typ. max. BUZ80A Unit A 3 V M S M C . 12 . , ) parameter: VGS > 10 V BUZ80A Safe operating area t = ñ VDs) parameter: D = 0.01, Tc = 25 -
OCR Scan
B23SL
Abstract: 7^2^537 DOMSbBT G7b â  SGTH ¿7/ SGS-THOMSON BUZ80A i[LII£TOǤ BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Vdss RdS(OII) Id BUZ80A BUZ80AFI 800 V 800 V < 3 Q < 3 n 3.8 A , BUZ80A BUZ80AFI Vos Drain-source Voltage (Vgs = 0) 800 V Vdgr Drain- gate Voltage (Rgs = 20 k£2) 800 , '¢) Pulse width limited by safe operating area April 1993 1/7 127 BUZ80A/BUZ80AFI â  7^237 0D4Sb4G BTfi , 72i* â SGTH BUZ80A/BUZ80AFI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter -
OCR Scan
Abstract: BUZ80A OLE D ^53^31 001455G b RATINGS T-39-11 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vds , PowerMOS transistor BUZ80A N AMER PHILIPS/DISCRETE ObE D â  bfa53131 0Ã14SS1 Ã â  REVERSE DIODE , transistor BUZ80A N ANER PHILIPS/DISCRETE ObE D ^53131 DDIHSSS T T-39-11 80 W P 70 D j 60 50 40 30 20 10 , transistor BUZ80A N AMER PHILIPS/DISCRETE DL.E D "*0S (ON) Fig. 6 Typical drain-source on-state , . 23? This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ80A N AMER Siemens
Original
transistor vds rds 12 id 80a to220 A1309 BUZ 840
Abstract: SGS-THOMSON Z T ê BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80A BUZ80AFI V d ss 800 V 800 V FtDS(on) 3 Ü 3 Li Id 3.8 A 2.4 A . . . . . . AVALANCHE , UNINTERRUPTIBLE POWER SUPPLY (UPS) 0 (2) 5 (3) ABSOLUTE MAXIMUM RATINGS Symbol Param eter BUZ80A V ds V , 121 BUZ80A/BUZ80AFI THERMAL DATA T 0 -2 2 0 Rthj-case Rthj-amb Rthc-sink ISOW ATT22Û 3.12 , -220 Package Safe Operating Areas For ISOWATT22Q Package SGS-THOMSON 3/7 123 BUZ80A/BÜZ80AF -
OCR Scan
TR 308 OF C67078-A3100-A2 C67078-A3109-A2
Abstract: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ80A CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain ­ Source Voltage Drain ­ Gate Voltage Drain Current ­ Continuous Drain Current ­ Pulsed Gate ­ Source Voltage , 25V, f = 1 MHz pF 150 pF 55 pF Page 1 of 2 TYPE: BUZ80A Drain Source Diode Siemens
Original
C67078-S1309-A3
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