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BUZ80A Datasheet

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BUZ80A N/A Shortform Datasheet & Cross References Data
ri

1 pages,
84.73 Kb

Scan Buy
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BUZ80A Motorola Switchmode Datasheet
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1 pages,
56.98 Kb

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BUZ80AFI N/A Shortform Datasheet & Cross References Data
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1 pages,
84.73 Kb

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BUZ 80A Infineon Technologies Conventional Power MOS Transistors
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9 pages,
141.81 Kb

Original Buy
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BUZ80A N/A Semiconductor Master Cross Reference Guide
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1 pages,
116.44 Kb

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BUZ80A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data)
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1 pages,
117.92 Kb

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BUZ80A N/A FET Data Book
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1 pages,
58.95 Kb

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BUZ80A Infineon Technologies N-Channel SIPMOS Power Transistor, 800V, TO-220, 3.00 ?, 3.0A
ri

9 pages,
141.8 Kb

Original Buy
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BUZ80A Philips Semiconductors PowerMOS Transistor
ri

7 pages,
217.12 Kb

Original Buy
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BUZ80A Siemens
ri

7 pages,
1066.96 Kb

Original Buy
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BUZ80A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS( on) ID BUZ80A BUZ80AFI 800 V 800 V < 3Ω < 3Ω 3.8 A 2.4 A s s s s s s s , RATINGS Symbol Parameter Value BUZ80A VD S V DG R V GS Unit BUZ80AFI Drain-source , width limited by safe operating area April 1993 1/10 BUZ80A/BUZ80AFI THERMAL DATA TO-220 R , . Max. 1 Unit S 1100 150 55 pF pF pF BUZ80A/BUZ80AFI ELECTRICAL CHARACTERISTICS ... STMicroelectronics
Original
datasheet

10 pages,
196.32 Kb

BUZ80A BUZ80AFI TEXT
datasheet frame
Abstract: BUZ80A ® N - CHANNEL 800V - 2.5 - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE V DSS s s s s s s s R DS(on) ID 800 V BUZ80A , ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it BUZ80A V DS V DGR V GS , 1998 1/9 BUZ80A THERMAL DATA TO-220 R thj -case Thermal Resistance Junction-case Max , 1100 150 35 pF pF pF ® BUZ80A ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON ... STMicroelectronics
Original
datasheet

9 pages,
99.67 Kb

BUZ80A TEXT
datasheet frame
Abstract: BUZ80A N - CHANNEL 800V - 2.5CI - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE V dss ■ . . . . . . RdS(oii) Id 800 V BUZ80A < 3 Q. 3.8 A TYPICAL RDS(on) = 2.5  , alue Unit BUZ80A V ds V dgr V gs 800 V D rain- gate V oltage (R gs = 20 k£2) 800 , 1/9 BUZ80A THERMAL DATA T O -220 R th j- c a s e Therm al Max 1.25 °C/W ^thj-a , Unit S 1 100 150 35 L L LL L L Q Q Q_ _ _ Ciss Coss Crss Pa ram eter BUZ80A ... OCR Scan
datasheet

8 pages,
94.19 Kb

BUZ80A TEXT
datasheet frame
Abstract: BUZ80A ® N - CHANNEL 800V - 2.5 - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE V DSS s s s s s s s R DS(on) ID 800 V BUZ80A , BUZ80A Drain-source Voltage (V GS = 0) 800 V Drain- gate Voltage (R GS = 20 k) 800 V , 1998 1/9 BUZ80A THERMAL DATA TO-220 R thj -case Thermal Resistance Junction-case Max , Unit S 1100 150 35 pF pF pF ® BUZ80A ELECTRICAL CHARACTERISTICS (continued ... STMicroelectronics
Original
datasheet

9 pages,
116.96 Kb

BUZ80a equivalent BUZ80A TEXT
datasheet frame
Abstract: SIEMENS SIPMOS ® Power Transistor BUZ80A · N channel · Enhancement mode Type BUZ 80A , 25°C, unless otherwise specified Parameter BUZ80A Symbol min. Values typ. max. Unit , . Dynamic Characteristics Transconductance ^bs9ls BUZ80A Values typ. max. Unit S 1 1.8 pF 1600 , írr 1.8 Vsd 1.05 1.3 IsM 12 Values typ. max. BUZ80A Unit A 3 V M S M C . 12 . , ) parameter: VGS > 10 V BUZ80A Safe operating area t = ñ VDs) parameter: D = 0.01, Tc = 25 ... OCR Scan
datasheet

9 pages,
128.46 Kb

BUZ80A TEXT
datasheet frame
Abstract: SGS-THOMSON £j ï ULKgraM OeS BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E BUZ80A BUZ80AFI V dss RDS(on) Id 800 V 800 V , by safe operating area April 1993 1/10 BUZ80A/B UZ80AFI UZ80AFI THERMAL DATA TO -220 R th j- c a , * 7 # BSIieR®BLIlTfMiaieS T SGS-THOMSON BUZ80A/B UZ80AFI UZ80AFI ELECTRICAL CHARACTERISTICS (continued , For ISOWATT22Q ISOWATT22Q Package * 7 # BSIieR®BLIlTfMiaieS H Z T SGS-THOMSON BUZ80A/B UZ80AFI UZ80AFI ... OCR Scan
datasheet

10 pages,
339.56 Kb

UZ80A BUZ80A BUZ80AFI TEXT
datasheet frame
Abstract: N AMER PHILIPS/DISCRETE ObE D ■ BUZ80A_ _ LbS3131'0Q145S1 0Q145S1 f ”■ l , _ _ BUZ80A_ N AMER PHILIPS/DISCRETE DbE T ■T1^53c 131 OOIMSSM 3 â , : refer to Mounting instructions for TO220 envelopes. 235 a PowerMOS transistor BUZ80A N , ns - nC PowerMOS transistor N AflER PHILIPS/DISCRETE _BUZ80A , _ N AMER PHILIPS/DISCRETE BUZ80A DbE D ■ bbS3T31 0014553 1 ■ ■■■ft -4 0 ... OCR Scan
datasheet

7 pages,
297.83 Kb

TEXT
datasheet frame
Abstract: BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS( on) ID BUZ80A BUZ80AFI 800 V 800 V < 3 < 3 3.8 A 2.4 A s s s s s s s TYPICAL , Parameter Value BUZ80A VD S V DG R V GS Unit BUZ80AFI Drain-source Voltage (V GS = 0) 800 , April 1993 1/10 BUZ80A/BUZ80AFI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl , BUZ80A/BUZ80AFI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on ... STMicroelectronics
Original
datasheet

10 pages,
106.1 Kb

BUZ80AF BUZ80A BUZ80AFI TEXT
datasheet frame
Abstract: 7^2^537 DOMSbBT G7b ■ SGTH ¿7/ SGS-THOMSON BUZ80A i[LII£TOǤ BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Vdss RdS(OII) Id BUZ80A BUZ80AFI 800 V 800 V < 3 Q < 3 n 3.8 A , BUZ80A BUZ80AFI Vos Drain-source Voltage (Vgs = 0) 800 V Vdgr Drain- gate Voltage (Rgs = 20 k£2) 800 , €¢) Pulse width limited by safe operating area April 1993 1/7 127 BUZ80A/BUZ80AFI ■ 7^237 0D4Sb4G BTfi , 72i* ■SGTH BUZ80A/BUZ80AFI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter ... OCR Scan
datasheet

7 pages,
340.01 Kb

dg45b BUZ80A BUZ80AF BUZ80AFI TEXT
datasheet frame
Abstract: BUZ80A OLE D ^53^31 001455G 001455G b RATINGS T-39-11 T-39-11 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vds , PowerMOS transistor BUZ80A N AMER PHILIPS/DISCRETE ObE D ■ bfa53131 0Ü14SS1 14SS1 Ö ■ REVERSE DIODE , transistor BUZ80A N ANER PHILIPS/DISCRETE ObE D ^53131 DDIHSSS T T-39-11 T-39-11 80 W P 70 D j 60 50 40 30 20 10 , transistor BUZ80A N AMER PHILIPS/DISCRETE DL.E D "*0S (ON) Fig. 6 Typical drain-source on-state , . 23? This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ80A N AMER ... OCR Scan
datasheet

7 pages,
217.12 Kb

V103 T0220AB buz80 BUZ80A V103 TRANSISTOR TEXT
datasheet frame
Abstract: BUZ80A ® N - CHANNEL 800V - 2.5 - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE V DSS s s s s s s s R DS(on) ID 800 V BUZ80A , BUZ80A Drain-source Voltage (V GS = 0) 800 V Drain- gate Voltage (R GS = 20 k) 800 V , 1998 1/9 BUZ80A THERMAL DATA TO-220 R thj -case Thermal Resistance Junction-case Max , Unit S 1100 150 35 pF pF pF ® BUZ80A ELECTRICAL CHARACTERISTICS (continued ... Siemens
Original
datasheet

8 pages,
507.89 Kb

C67078-A1309-A3 BUZ 80 BUZ80 TEXT
datasheet frame
Abstract: BUZ80A ® N - CHANNEL 800V - 2.5 - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE V DSS s s s s s s s R DS(on) ID 800 V BUZ80A , ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it BUZ80A V DS V DGR V GS , 1998 1/9 BUZ80A THERMAL DATA TO-220 R thj -case Thermal Resistance Junction-case Max , 1100 150 35 pF pF pF ® BUZ80A ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON ... New Jersey Semiconductor
Original
datasheet

3 pages,
82.91 Kb

TEXT
datasheet frame
Abstract: SIEMENS SIPMOS ® Power Transistor BUZ80A · N channel · Enhancement mode Type BUZ 80A , 25°C, unless otherwise specified Parameter BUZ80A Symbol min. Values typ. max. Unit , . Dynamic Characteristics Transconductance ^bs9ls BUZ80A Values typ. max. Unit S 1 1.8 pF 1600 , írr 1.8 Vsd 1.05 1.3 IsM 12 Values typ. max. BUZ80A Unit A 3 V M S M C . 12 . , ) parameter: VGS > 10 V BUZ80A Safe operating area t = ñ VDs) parameter: D = 0.01, Tc = 25 ... OCR Scan
datasheet

9 pages,
136.34 Kb

TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
TRANSISTOR BUZ80A N-CHANNEL 800V - 2.5 OHM - 3.8A - TO-220 FAST POWER MOS TRANSISTOR the following formats: Portable Document Format and Raw Text Format BUZ80A N - ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUZ80A V DS Drain-source Voltage (V GS = 0) 800 V V Temperature 150 o C ( w ) Pulse width limited by safe operating area TYPE V DSS R DS(on) I D BUZ80A 800 V V GS = 0 1100 150 35 pF pF pF [ BUZ80A 2/9 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2955-v2.htm
STMicroelectronics 14/06/1999 7.51 Kb HTM 2955-v2.htm
TO-220 FAST POWER MOS TRANSISTOR BUZ80A Document Format Size Document /1998 9 Raw Text Format BUZ80A N - CHANNEL 800V - 2.5 W - ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUZ80A V DS Drain-source Voltage (V GS = 0) 800 V V Temperature 150 o C ( w ) Pulse width limited by safe operating area TYPE V DSS R DS(on) I D BUZ80A 800 V V GS = 0 1100 150 35 pF pF pF [ BUZ80A 2/9 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2955.htm
STMicroelectronics 20/10/2000 10 Kb HTM 2955.htm
TRANSISTOR BUZ80A N-CHANNEL 800V - 2.5 OHM - 3.8A - TO-220 FAST POWER MOS TRANSISTOR the following formats: Portable Document Format and Raw Text Format BUZ80A N - ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUZ80A V DS Drain-source Voltage (V GS = 0) 800 V V Temperature 150 o C ( w ) Pulse width limited by safe operating area TYPE V DSS R DS(on) I D BUZ80A 800 V V GS = 0 1100 150 35 pF pF pF [ BUZ80A 2/9 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2955-v1.htm
STMicroelectronics 02/04/1999 7.54 Kb HTM 2955-v1.htm
BUZ80A Document Format Size Document Number Date Update Pages BUZ80A N - CHANNEL 800V - 2.5 W - 3.8A - TO-220 FAST POWER MOS TRANSISTOR n TYPICAL R DS(on) = Symbol Parameter Value Unit BUZ80A V DS Drain-source Voltage (V GS = 0) 800 V V DGR Drain- gate area TYPE V DSS R DS(on) I D BUZ80A 800 V < 3 W 3.8 A November 1998 1 2 3 TO-220 f = 1 MHz V GS = 0 1100 150 35 pF pF pF [ BUZ80A 2/9 ELECTRICAL CHARACTERISTICS
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2955-v3.htm
STMicroelectronics 18/12/2000 10.43 Kb HTM 2955-v3.htm
ST | N-CHANNEL 800V - 2.5 OHM - 3.8A - TO-220 FAST POWER MOS TRANSISTOR Datasheet N-CHANNEL 800V - 2.5 OHM - 3.8A - TO-220 FAST POWER MOS TRANSISTOR BUZ80A Document Format Size Document Number Date Update Pages Portable Document Format 2955 09/11/1998 9 Raw Text Format
/datasheets/files/stmicroelectronics/stonline/books/all/2955-v3.htm
STMicroelectronics 20/10/2000 2.9 Kb HTM 2955-v3.htm
STP5NB80 STP5NB80 TO-220 STP5NB80 STP5NB80 800 3.3 STP4NB80 STP4NB80 TO-220 STP4NB80 STP4NB80, BUZ80A 800 3.3
/datasheets/files/stmicroelectronics/stonline/campaign/gold/discrete/highmosf-v1.htm
STMicroelectronics 04/01/2001 12.38 Kb HTM highmosf-v1.htm
TO-220 BUZ80A IRFBE30 IRFBE30 MTP4N80E MTP4N80E Top
/datasheets/files/stmicroelectronics/stonline/campaign/gold/discrete/mosfet-v1.htm
STMicroelectronics 31/03/1999 12.08 Kb HTM mosfet-v1.htm
SGS-THOMSON | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS BUZ80A , BUZ80AFI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Document Number: 2955 Date Update: 9/4/94 Pages: 10 The document is available in the following formats: Portable Document Format and Raw Text Format
/datasheets/files/stmicroelectronics/stonline/books/all/2955.htm
STMicroelectronics 06/02/1998 0.95 Kb HTM 2955.htm
ST | N-CHANNEL 800V - 2.5 OHM - 3.8A - TO-220 FAST POWER MOS TRANSISTOR BUZ80A N-CHANNEL 800V - 2.5 OHM - 3.8A - TO-220 FAST POWER MOS TRANSISTOR Document Number: 2955 Date Update: 09/11/98 Pages: 9 The document is available in the following formats: Portable Document Format and Raw Text Format
/datasheets/files/stmicroelectronics/stonline/books/all/2955-v1.htm
STMicroelectronics 31/03/1999 0.93 Kb HTM 2955-v1.htm
ST | N-CHANNEL 800V - 2.5 OHM - 3.8A - TO-220 FAST POWER MOS TRANSISTOR BUZ80A N-CHANNEL 800V - 2.5 OHM - 3.8A - TO-220 FAST POWER MOS TRANSISTOR Document Number: 2955 Date Update: 09/11/98 Pages: 9 The document is available in the following formats: Portable Document Format and Raw Text Format
/datasheets/files/stmicroelectronics/stonline/books/all/2955-v2.htm
STMicroelectronics 14/06/1999 0.91 Kb HTM 2955-v2.htm

Ixys Corp. Cross Reference Results

Ixys Corp. Part Ixys Description Industry Part Manufacturer Description Type
IXFP7N80P Buy VDSS (V)=800, ID@TC=25°C(A)=7, RDS(on) max @TJ=25°C(Ohm)=1.4 BUZ80A Buy STMicroelectronics VDSS (V)=800, ID@TC=25°C(A)=3.8, RDS(on) max @TJ=25°C(Ohm)=2.5 Close

NTE Electronics Cross Reference Results

NTE Electronics Part Industry Part
NTE2387 Buy BUZ80A Buy
NTE2387 Buy BUZ80AFI Buy

STMicroelectronics Cross Reference Results

STMicroelectronics Part Industry Part Manufacturer Type Description
STP4NA80 Buy BUZ80A Buy - Replacement Power MOSFETs
STP4NA80FI Buy BUZ80AFI Buy - Replacement Power MOSFETs
STP4NB80 Buy BUZ80A Buy Infineon Technologies Nearest Preferred Power MOSFETs - Very High Voltage

Misc. Cross Reference Results

Part Similar Part Notes
BUZ80A Buy 2SK513 Buy
BUZ80A Buy 2SK792 Buy
BUZ80A Buy BUZ81 Buy
BUZ80A Buy STP3NK80Z Buy
BUZ80A Buy STP4NK80Z Buy
BUZ80A Buy STP5NK80Z Buy
BUZ80AFI Buy 2SK1356 Buy
BUZ80AFI Buy 2SK1460 Buy