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Part : BUZ42 Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 1,320 Best Price : $1.14 Price Each : $1.14
Part : BUZ42 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 20 Best Price : $0.85 Price Each : $0.85
Part : BUZ42 Supplier : Siemens Manufacturer : ComSIT Stock : 1,513 Best Price : - Price Each : -
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BUZ42 Datasheet

Part Manufacturer Description PDF Type
BUZ42 Harris Semiconductor Power MOSFET Selection Guide Original
BUZ 42 Infineon Technologies Conventional Power MOS Transistors Original
BUZ42 Infineon Technologies N-Channel SIPMOS Power Transistor, 500V, TO-220, 2.00 ?, 4.0A Original
BUZ42 Intersil 4A, 500V, 2.000 ?, N-Channel Power MOSFET Original
BUZ42 Philips Semiconductors PowerMOS Transistor Original
BUZ42 Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) Original
BUZ42 Siemens Original
BUZ42 Toshiba Power MOSFETs Cross Reference Guide Original
BUZ42 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
BUZ42 N/A Shortform Datasheet & Cross References Data Scan
BUZ42 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BUZ42 N/A Semiconductor Master Cross Reference Guide Scan
BUZ42 N/A Semiconductor Master Cross Reference Guide Scan
BUZ42 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BUZ42 N/A FET Data Book Scan
BUZ42 Semelab MOS Power Transistor Scan
BUZ42 Siemens Power Transistors Scan
BUZ42 STMicroelectronics Shortform Data Book 1988 Scan
BUZ42A N/A Semiconductor Master Cross Reference Guide Scan
BUZ42B N/A Semiconductor Master Cross Reference Guide Scan
Showing first 20 results.

BUZ42

Catalog Datasheet MFG & Type PDF Document Tags

BUZ42

Abstract: specified) STATIC 500 Test Conditions Units V bvd ss o BUZ42 Max. Typ . < C , BUZ42 3 4 V 'G SSF Gate-Body Leakage Forward BUZ42 10 100 nA V G S = 20V 'G SSH Gate-8ody Leakage Reverse BUZ42 -10 -1 0 0 nA V GS * - 2 0 V loss Zero Gate Voltage Drain Current BUZ42 0.1 1 mA V q s = Max. Rating. V q s * 0 BUZ42 , ' 1 0 v V Vqs 3 BUZ42 'D(cm) Static Orain-Source On-State Voltage1 4 V DS = VGS
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OCR Scan
T-39-11

BUZ42

Abstract: SGS-THOMSON A 7Æ, «(g M ilL lig T O M g i_ BUZ42 fZrj N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ42 V DSS ^D S(on) 500 V 2 n 4 A · HIGH VOLTAGE - FOR OFF-LINE , June 1988 1/4 203 BUZ42 THERMAL DATA R,hj . caSe Thermal resistance junction-case Rthj . amb , BUZ42 ELECTRICAL CHARACTERISTICS (Continued) Parameters Test Conditions Min. Typ. Max. Unit SOURCE , i"i 205 BUZ42 Static drain-source on resistance Maximum drain current vs temperature Gate
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OCR Scan
100KH

TA17415

Abstract: BUZ42 BUZ42 Semiconductor Data Sheet 4A, 500V, 2.000 Ohm, N-Channel Power MOSFET October 1998 , gate power · rDS(ON) = 2.000 (BUZ42 field effect transistor designed for applications such as · SOA , Boards" BUZ42 TO-220AB BUZ42 MOSNOTE: When ordering, use the entire part number. FET) Symbol , IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ42 TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings BUZ42 500 500 4.0 16 ±20 75 300 0.6
Harris Semiconductor
Original
TA17415 TB334 TO 220AB Mosfet 220AB

BUZ42

Abstract: * 7 M U *ß 3 m i(g T M R l(g § Æ # S G S -T H O M S O N BUZ42 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ42 V DSS ^D S(on) 500 V 2 n 4 A · HIGH VOLTAGE - FOR , 1988 1/4 203 BUZ42 THERMAL DATA Rthj. case Thermal resistance junction-case Rthj - amb , [Z J SGS-THOMSON BUZ42 ELECTRICAL CHARACTERISTICS (Continued) Parameters Test Conditions Min , Transconductance * 7 #» « se m e s» « * * rZ J SCS-THOMSON 205 BUZ42 Static drain-source on resistance
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OCR Scan
10OKH
Abstract: (DIN IEC 68-1) June 1988 E 55/150/56 1/4 203 BUZ42_ â  THERM AL DATA , BUZ42 500 V 3DE RDS(on) 2 Q » Id 4 A â'¢ HIGH VOLTAGE - FOR OFF-LINE SM PS â'¢ ULTRA , . EDSS-î'llui'SriS'SKîSg 7 ^ 2 3 7 OOS^böfl BUZ42 7 Tâ'"3 9 â'"71 ELECTRICAL CH AR A , BUZ42 â  _ S 1 1 2 ? 237 6 T -3 9 -1 1 DO21 30E S-THOMSON D Gate -
OCR Scan

TA17415

Abstract: BUZ42 Semiconductor October 1998 Data Sheet 4A, 500V, 2.000 Ohm, N-Channel Power MOSFET , . â'¢ Majority Carrier Device Ordering Information PART NUM BER BUZ42 â'¢ Related Literature PACKAGE TO-22QAB BRAND BUZ42 NOTE: W hen ordering, use the entire part number. - TB334 , Handling Procedures. 1-800-4-H AR R IS | C opyright © Harris C orporation 1998 BUZ42 Absolute Maximum Ratings Tc = 25°c, Unless Otherwise Specified BUZ42 UNITS 500 V Drain to Source
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OCR Scan

transistor N100

Abstract: N100 transistor N AMER PHILIPS/DISCRETE ObE D â  hbSa^Bl OOIMSOO 5 PowerMOS transistor " BUZ42 May 1987 , transistor ObE D â  ^53^31 DD1HSD2 b â"¢ BUZ42 T-39-11 REVERSE DIODE RATINGS AND CHARACTERISTICS SYMBOL , Respective Manufacturer _PowerMQStraiisistor N AMER PHILIPS/DISCRETE â¡ bE D BUZ42 ^53131 Q0mS03 à , BUZ42 N AMER PHILIPS/DISCRETE ObE D ^os(on) â l/GS=5V 5,5V Fig. 6 Typical drain-source on-state , Copyrighted By Its Respective Manufacturer _BUZ42 ObE D â  ^53^31 DOmSDS 1 T-39-11 Fig. 11 Continuous
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OCR Scan
T0220AB transistor N100 N100 transistor K 192 A transistor Transistor 5331 transistor k 3911 N100 T0220 0014SD
Abstract: Pow erM O S tran sistor BUZ42_ N AMER PHILIPS/DISCRETE OLE D â  bbSBTBl , N AMER PHILIPS/DISCRETE QbE D â  Power MOS transistor b{353^31 0014500 5 â  BUZ42 , transistor ObE D â  bbEB^l D01HS02 b â  " BUZ42 " T-39-11 REVERSE DIODE RATINGS , sistor N AMER PHILIPS/DISCRETE BUZ42 OhE D â  bb53T31 0014504 T â  T-39-11 190 Pow erM O S tran sistor_ _ N AMER PHILIPS/DISCRETE DbE D BUZ42 -
OCR Scan
DD1HS01 53T31 S3T31 0D14SDS 00145D

BUZ42

Abstract: C ), U nle ss O th e rw is e S p e c ifie d BUZ42 UNITS V V A A mj V W °C Drain-Source V o lta g , 1200 6.0 - 4-121 N-CHANNEL POWER MOSFETs BUZ42 DRA IN -TO -S O U R C E VOLTAGE (V DS , Typical transfer characteristics for all types. 4-122 BUZ42 D R A IN -TO -S O U R C E VOLTAGE , temperature. 4-123 N-CHANNEL POWER MOSFETs BUZ42 THERMAL RESPONSE (Z,hJC) RECTANGULAR
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OCR Scan

bu245a

Abstract: 2n6895 1.25 0.80 0.60 0.60 0.50 rfm3n50 rfm6n50 bu245a bu245 rfm10n50 buz45b rfh10n50 rfp3n50 buz42 buz41a
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OCR Scan
bu245a 2n6895 BU245 RFM12P10 2N6897 RFP12P10 0QD5704 T0-220

IRF732P

Abstract: IRF722P BUZ20 BUZ21 BUZ24 BUZ25 BUZ32 BUZ34 BUZ41A BUZ42 BUZ45 BUZ45A BUZ60 BUZ60B BUZ64 BUZ71 BUZ71A BUZ71FI , BUZ24 BUZ25 BUZ32 BUZ34 BUZ41A BUZ42 BUZ45 BUZ45A BUZ60 BUZ60B SGSP575 BUZ71 BUZ71A BUZ71FI BUZ71FI
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OCR Scan
2SK295 SGSP321 SGSP367 IRF540FI SGSP381 SGSP369 IRF732P IRF722P SGSP3055 1rfp450 MTP20N10 irf522p 2SK296 2SK308 2SK310 2SK311 2SK312

2N6801-SM

Abstract: BFC49 BUZ10A BUZ 11 BUZ11A BUZ20 BUZ21 BUZ23 BUZ24 BUZ25 BUZ31 BUZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45
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OCR Scan
2N6801-SM BFC49 2N6800SM 2N6801 2N6801LCC4 2N6802 2N6802SM

irf630 irf640

Abstract: IRF250N 1,8 400 5,5 1,0 500 4,0 2,0 1000 4,3 3,5 BUZ32 BUZ76 BUZ60 BUZ42 RFP4N100 Power
Harris Semiconductor
Original
IRFP460 RLP5N08LE irf630 irf640 IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 IRFD112 IRFD120 IRF120 IRF140 IRF150 IRF510

TP8N10

Abstract: th15n20 BUZ41A BUZ42 BUZ45 BUZ45A BUZ60 BUZ60B BUZ64 BUZ71 BUZ71A BUZ71FI BUZ71P BUZ72A BUZ73A BUZ74 BUZ74A BUZ76 , BUZ21 BUZ24 BUZ25 BUZ32 BUZ34 BUZ41A BUZ42 BUZ45 BUZ45A BUZ60 BUZ60B SGSP575 BUZ71 BUZ71A BUZ71FI
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OCR Scan
TP3055A TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI 2SK313 2SK319 2SK320 2SK324 2SK345 2SK346

IEF520

Abstract: BUZ10A BUZ42 EEQ N-CH T03 500 2. 0 4 75 BUZ45 EEQ N-CH T03 500 0. 6 9.6 125 BUZ45 EEQ N-CH T03 500 0. 6 10
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OCR Scan
BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 IEF520 T0220H BUZ63

SGSP369

Abstract: TSD4M450V 2.5 TO 2:20 BUZ42 4 75 1.5 2000 500 2 2.5 TO 220 IRF832 4 74 2.7 80(3 500 2 2.5 ISOWATT 220 IRF832FI
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OCR Scan
IRF831 IRF831FI SGSP364 IRF843 IRF841 IRF841FI TSD4M450V SGSP479 IRFP450fi IRF840FI SGSP239 IRF843FI

2N4351 MOTOROLA

Abstract: MRF966 2SK355 Part No. Alternate Device 2SK355 (Conl'd) IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132 VN1210N1 2SK399 IRFP142 2SK400 IRFP242 2SK401 BUZ84 IRF353 2SK402 IRFP342 2SK403 IRFP443 2SK405 IRFP242 2SK408 IRF612 2SK40~ REPLACEMENTI ALTERNATE SOURCE Mfr. FairchildSC Siemens Akt AmperexElec FairchildSC Siemens Akt Siemens Akt Siemens Akt FairchildSC Inti Rectfr
Space Power Electronics
Original
2N4351 MOTOROLA MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 3N147 3N189 3N146 2N4352 3N163 2SK554

TSD4M450V

Abstract: SGSP479 2.5 TO 2:20 BUZ42 4 75 1.5 2000 500 2 2.5 TO 220 IRF832 4 74 2.7 80(3 500 2 2.5 ISOWATT 220 IRF832FI
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OCR Scan
SGSP474 IRF453 IRFP453FI STHV82 SGS100MA010D1 TSD4M250V tsd4m45 tsd4m250 TSD4M351V SGSP574 IRF451 IRFP451

8UZ11

Abstract: BUZ171 ±20 22 125 ±100 ±20 1000 200 2. 1 4 IO 0. 12 10 11 22 10 5 11 1100* 240* 75* 25 TO-204AE BUZ42
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OCR Scan
8UZ11 BUZ171 t02G SILICONIX T0-204AA T0-220AB 8UZ63 IBF123

irfp 950

Abstract: tsd4m450v 30 1 400 500 2 2.5 TO 2:20 BUZ42 4 75 1.5 2000 500 2 2.5 TO 220 IRF832 4 74 2.7 80(3 500 2 2.5
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OCR Scan
MTP3N60 MTP6N60 irfp 950 transistor BUZ45 IRF 950 IRFP 740 MTH6N60 IRF842 IRF842FI IRF840 BUZ354 SGSP579 BUZ353

C67078-S1311-A2

Abstract: * 7 M U *ß 3 m i(g T M R l(g § Æ # S G S -T H O M S O N BUZ42 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ42 V DSS ^D S(on) 500 V 2 n 4 A · HIGH VOLTAGE - FOR , 1988 1/4 203 BUZ42 THERMAL DATA Rthj. case Thermal resistance junction-case Rthj - amb , [Z J SGS-THOMSON BUZ42 ELECTRICAL CHARACTERISTICS (Continued) Parameters Test Conditions Min , Transconductance * 7 #» « se m e s» « * * rZ J SCS-THOMSON 205 BUZ42 Static drain-source on resistance
Siemens
Original
C67078-S1311-A2
Abstract: SGS-THOMSON A 7Æ, «(g M ilL lig T O M g i_ BUZ42 fZrj N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ42 V DSS ^D S(on) 500 V 2 n 4 A · HIGH VOLTAGE - FOR OFF-LINE , June 1988 1/4 203 BUZ42 THERMAL DATA R,hj . caSe Thermal resistance junction-case Rthj . amb , BUZ42 ELECTRICAL CHARACTERISTICS (Continued) Parameters Test Conditions Min. Typ. Max. Unit SOURCE , i"i 205 BUZ42 Static drain-source on resistance Maximum drain current vs temperature Gate -
OCR Scan
SIL00347 SIL00351 SIL00032
Abstract: C ), U nle ss O th e rw is e S p e c ifie d BUZ42 UNITS V V A A mj V W °C Drain-Source V o lta g , 1200 6.0 - 4-121 N-CHANNEL POWER MOSFETs BUZ42 DRA IN -TO -S O U R C E VOLTAGE (V DS , Typical transfer characteristics for all types. 4-122 BUZ42 D R A IN -TO -S O U R C E VOLTAGE , temperature. 4-123 N-CHANNEL POWER MOSFETs BUZ42 THERMAL RESPONSE (Z,hJC) RECTANGULAR -
OCR Scan
D5155

C67078-S1311-A2

Abstract: N AMER PHILIPS/DISCRETE QbE D â  Power MOS transistor b{353^31 0014500 5 â  BUZ42 , Pow erM O S tran sistor BUZ42_ N AMER PHILIPS/DISCRETE OLE D â  bbSBTBl , transistor ObE D â  bbEB^l D01HS02 b â  " BUZ42 " T-39-11 REVERSE DIODE RATINGS , sistor N AMER PHILIPS/DISCRETE BUZ42 OhE D â  bb53T31 0014504 T â  T-39-11 190 Pow erM O S tran sistor_ _ N AMER PHILIPS/DISCRETE DbE D BUZ42
Siemens
Original
Abstract: BUZ20 BUZ21 BUZ24 BUZ25 BUZ32 BUZ34 BUZ41A BUZ42 BUZ45 BUZ45A BUZ60 BUZ60B BUZ64 BUZ71 BUZ71A BUZ71FI , BUZ24 BUZ25 BUZ32 BUZ34 BUZ41A BUZ42 BUZ45 BUZ45A BUZ60 BUZ60B SGSP575 BUZ71 BUZ71A BUZ71FI BUZ71FI -
OCR Scan
Abstract: 30 1 400 500 2 2.5 TO 2:20 BUZ42 4 75 1.5 2000 500 2 2.5 TO 220 IRF832 4 74 2.7 80(3 500 2 2.5 -
OCR Scan
SIL022
Showing first 20 results.