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Part : BUZ350 Supplier : Siemens Manufacturer : ComSIT Stock : 42 Best Price : - Price Each : -
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BUZ350 Datasheet

Part Manufacturer Description PDF Type
BUZ350 Infineon Technologies Power MOSFET, 200V, TO-220, RDSon=0.12 ?, 22A, NL Original
BUZ350 Philips Semiconductors PowerMOS Transistor Original
BUZ350 Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) Original
BUZ350 Siemens Original
BUZ350 Toshiba Power MOSFETs Cross Reference Guide Original
BUZ350 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BUZ350 N/A Shortform Datasheet & Cross References Data Scan
BUZ350 Siemens Power Transistors Scan

BUZ350

Catalog Datasheet MFG & Type PDF Document Tags

buz350

Abstract:   bb53T31 0Q147S3 T â  BUZ350 ~ T-39-13 I I UNIT V V V A A A W °C TYP. 3,0 20 , FowerMOS transistor â'" â  ^^53=131 D014754 â¡ â  BUZ350 ~* T-39-13 REVERSE DIODE , ObE D â  BUZ350 (^53131 0D14755 2 â"¢ T-39-13 Fig.3 Typical output characteristics , PowerMOS transistor OLE D â  LLSBTBl 001475L 4 â  BUZ350 _ 442 ,   BUZ350 ' T-39-13 443 N AMER PHILIPS/PISCRETE OLE D PowerMOS transistor â  bbSSTBl
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OCR Scan
S3131 T0218AA 53T31 00147SS

BUZ350

Abstract: IY TRANSISTOR N AUER PHILIPS/DISCRETE DfaE D ^53=131 0014752 7 PowerMOS transistor BUZ350 r-if-is May , Copyrighted By Its Respective Manufacturer ObE D â  b[353^31 0014753 1 BUZ350 ~ T-39-13 RATINGS Limiting , Manufacturer N AMER PHILIPS/DISCRETE OLE D â  bbSB^l QQIMTSM 0 FowerMOS transistor BUZ350 T-39-13 REVERSE , N AMER PHILIPS/DISCRETE PowerMOS transistor â¡ bE D bbSBTBl 0014755 5 BUZ350 T-39-13 50 / A , transistor BUZ350 T-39-13 Fig. 6 Typical drain-source on-state resistance rds(on) = md) Parameter: VgS' Tf
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OCR Scan
BUZ35 IY TRANSISTOR at ma hi mvs D0147S7

buz350 mosfet

Abstract: SOT23 34N SFN252 2N6960 BUZ350 BUZ350 SGSP577 SGSP477 IXTL250 (A) OM6018SA (A) 30 Inti Aectfr Siemens Akt
Short Form Catalog
Original
BUZ37 MTH15N20 IAF610 DVD020S DVD120T DVD150T buz350 mosfet SOT23 34N efm1394m160 MTH30N20 IAFJ240 BUZ31 BUZ34 IXTL15N20

BSS97

Abstract: 2SK564 ; T0202 BSS97 N 2 1.5 1 1.6 2.0 T0202 - BUZ73A BUZ31 BUZ350 N N 8 5.8 19 I 12.5 40 I
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OCR Scan
BSS110 BSS98 BUZ71L BUZ71 BUZ10 BUZ11A 2SK564 BSS95 J3303 2SK616 buz349 2SK562 T0220

IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE IRF631 IRF632 IRF633 IRFP340 IRFP440 SIEMENS BUZ347 BUZ348 BUZ349 BUZ350 BUZ351 BUZ353 BUZ350 BUZ351
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OCR Scan
IRF9613 IRFP333 VN0106N5 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF510 IRF511 IRF512 IRF513 IRF520 IRF521

SIPC69N60C3

Abstract: SPW20N60S5 equivalent BSP295 BSP319 BUZ31 BUZ73L BUZ350 BSO304SN BSO615NV BUZ72 BUZ341 BUZ73 BUZ344
Infineon Technologies
Original
BTS555 SPNA2N80C2 SIPC26N60C3 SIPC30S2N08 BSP229 SKP15N60 SIPC69N60C3 SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets BUZ78 equivalent SDP06S60 SDP04S60 SDB10S30 BTS550P BTS650P

BUZ78

Abstract: SIPC69N60C3 n/p-channel enhancement BUZ20 BUZ72 BUZ350 BSP88 BSO302SN BSO615N BSP320S SPH140N08S2
Infineon Technologies
Original
BTS443P SPP08N80C3 BTS840S2 BTS118D SIPC05N60C3 IPB15N03L BUZ78 buz22 SIPC26N80C3 BTS308 BTS409 BTS410-H2 BTS640S2 BTS6510

buz90af

Abstract: P7NB60FP 0,63 150 MT200 2SK2134 200 13 0,4 70 T0220 BUZ30A 200 7 0,13 75 T0220 BUZ350 200 22 2,6 125 SOT93
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OCR Scan
2SK192 2SK125 2SK163 2SK30A BUZ100 2SK1377-TOS buz90af P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK212 2SK241 BF960 BF961 BF964

A1306 TRANSISTOR

Abstract: t a1306 1 0.04 125 m A3116-A2 BUZ349 100 32 1 0.06 125 m A3113-A2 BUZ350 200 22 1 0.12 125 m A3117-A2
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OCR Scan
A1316-A3 A1328-A3 A1306 TRANSISTOR t a1306 A1306A A3206A A1309 T0-220 C67078- A1300-A2 A1329-A2 A1301-A2 BUZ11

sso8 package

Abstract: MOSFET P SOT-23 BUZ350 21.0 64.0 BUZ30A 14.5 50.0 BUZ31 1.2.2.0 13.5 90.0 BUZ31L , BUZ345 BUZ349 BUZ350 BUZ73 BUZ73A BUZ73AL BUZ73L IPB03N03LA IPB04N03LA IPB05N03LA IPB06N03LA
Infineon Technologies
Original
sso8 package MOSFET P SOT-23 SOT323 MOSFET P BS0615NV tda 2850 BSS138N B152-H8203-X-X-7600

BUZ90af

Abstract: hv82 , BUZ101SL BUZ102S BUZ11 BUZ11A BUZ171 BUZ173 BUZ22 BUZ271 BUZ323 BUZ325 BUZ332A BUZ334 BUZ350
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Original
hv82 MGF4919G-01 MGF4919G BUZ80AF1 MGF2407A-01 6n60 BF1005 BLF244/B BSP149 BSP17 SO-20

BUZ901P

Abstract: BUZ900P Resistance Switching ID: 3.0 Case Style: TO-247 Polarity: Industry Type: BUZ349 STI Type: BUZ350 Notes , Switching toff: 430 Resistance Switching ID: 2.9 Case Style: TO-247 Polarity: Industry Type: BUZ350
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Original
DTS410 BUZ901P BUZ900P BUZ900 buz90a d44c3 BUZ77 BUZ346 BUZ346S2 DTS4074 DTS4075 DTS4075A DTS409

IRF540 complementary

Abstract: IRFZ44N complementary BUZ72AL BUZ72A BUZ341 BUZ350 BUZ30A BUZ31 BUZ31L BUZ32 BUZ73 BUZ73L BUZ73A BUZ73AL BUZ323
STMicroelectronics
Original
STP3N60FI IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L

FET BFW10

Abstract: KP101A BUZ326 BUZ330 BUZ331 BUZ347 BUZ348 BUZ349 BUZ350 BUZ351 BUZ355 BUZ356 BUZ357 BUZ358 BUZ384 BUZ385 BY228
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OCR Scan
BA583 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BA220 BA221 BA223 BA281 BA314 BA315

YTA630

Abstract: MTW14P20 BUZ342 BUZ344 BUZ345 BUZ346 BUZ346S2 BUZ347 BUZ349 BUZ350 BUZ351 BUZ355 BUZ356 BUZ357 BUZ358
Toshiba
Original
YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401

Q2N4401

Abstract: D1N3940   bb53T31 0Q147S3 T â  BUZ350 ~ T-39-13 I I UNIT V V V A A A W °C TYP. 3,0 20 , FowerMOS transistor â'" â  ^^53=131 D014754 â¡ â  BUZ350 ~* T-39-13 REVERSE DIODE , ObE D â  BUZ350 (^53131 0D14755 2 â"¢ T-39-13 Fig.3 Typical output characteristics , PowerMOS transistor OLE D â  LLSBTBl 001475L 4 â  BUZ350 _ 442 ,   BUZ350 ' T-39-13 443 N AMER PHILIPS/PISCRETE OLE D PowerMOS transistor â  bbSSTBl
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Original
Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 RD91EB

BGY41

Abstract: BFW10 FET transistor N AUER PHILIPS/DISCRETE DfaE D ^53=131 0014752 7 PowerMOS transistor BUZ350 r-if-is May , Copyrighted By Its Respective Manufacturer ObE D â  b[353^31 0014753 1 BUZ350 ~ T-39-13 RATINGS Limiting , Manufacturer N AMER PHILIPS/DISCRETE OLE D â  bbSB^l QQIMTSM 0 FowerMOS transistor BUZ350 T-39-13 REVERSE , N AMER PHILIPS/DISCRETE PowerMOS transistor â¡ bE D bbSBTBl 0014755 5 BUZ350 T-39-13 50 / A , transistor BUZ350 T-39-13 Fig. 6 Typical drain-source on-state resistance rds(on) = md) Parameter: VgS' Tf
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OCR Scan
BGY41 BFW10 FET transistor CQY58 germanium RX101 JFET BFW10 SPECIFICATIONS LCD01

transistor f6 13003

Abstract: equivalent transistor bj 131-6 IRF631 IRF632 IRF633 IRFP340 IRFP440 SIEMENS BUZ347 BUZ348 BUZ349 BUZ350 BUZ351 BUZ353 BUZ350 BUZ351
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OCR Scan
transistor f6 13003 equivalent transistor bj 131-6 BB112 tunnel diode BFQ25 BU705

SEMICON INDEXES

Abstract: Ericsson SPO 1410 SFN252 2N6960 BUZ350 BUZ350 SGSP577 SGSP477 IXTL250 (A) OM6018SA (A) 30 Inti Aectfr Siemens Akt
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OCR Scan
SEMICON INDEXES Ericsson SPO 1410 Ericsson RBS 6102 Solitron Devices pnp, 200 V, 20A tr/NEC Tokin 0d 108 irfp240f VV276

IRFD1Z3 equivalent

Abstract: TP8N20 BSP295 BSP319 BUZ31 BUZ73L BUZ350 BSO304SN BSO615NV BUZ72 BUZ341 BUZ73 BUZ344
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OCR Scan
IRFD1Z3 equivalent TP8N20 siemens semiconductor manual 2N6823 8N60 equivalent TP8N10 4000D 4001D L001A 4501D 4502D P002A

transistor buz 350

Abstract: d 1047 transistor n/p-channel enhancement BUZ20 BUZ72 BUZ350 BSP88 BSO302SN BSO615N BSP320S SPH140N08S2
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OCR Scan
transistor buz 350 d 1047 transistor C67078-S3117-A2

transistor buz 350

Abstract: buz 350 equivalent BUZ350 21.0 64.0 BUZ30A 14.5 50.0 BUZ31 1.2.2.0 13.5 90.0 BUZ31L , BUZ345 BUZ349 BUZ350 BUZ73 BUZ73A BUZ73AL BUZ73L IPB03N03LA IPB04N03LA IPB05N03LA IPB06N03LA
Infineon Technologies
Original
buz 350 equivalent
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