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Part : BUZ-11A Supplier : STMicroelectronics Manufacturer : Chip One Exchange Stock : 14 Best Price : - Price Each : -
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BUZ11A Datasheet

Part Manufacturer Description PDF Type
BUZ11A Philips Semiconductors PowerMOS Transistor Original
BUZ11A Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) Original
BUZ11A STMicroelectronics N-Channel 50 V-0.045 ohm-26 A TO-220 STripFET MOSFET Original
BUZ11A STMicroelectronics N-CHANNEL 50V - 0.045 Ohm - 26A -TO-220 STripFET POWER MOSFET Original
BUZ11A STMicroelectronics N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS Original
BUZ11A STMicroelectronics N-Channel 50V - 0.045Ohm - 26A TO-220 STripFET MOSFET Original
BUZ11A Toshiba Power MOSFETs Cross Reference Guide Original
BUZ11A Motorola Switchmode Datasheet Scan
BUZ11A Motorola European Master Selection Guide 1986 Scan
BUZ11A N/A Shortform Datasheet & Cross References Data Scan
BUZ11A N/A Semiconductor Master Cross Reference Guide Scan
BUZ11A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BUZ11A N/A FET Data Book Scan
BUZ11A Semelab MOS Power Transistor Scan
BUZ11A Siemens Power Transistors Scan
BUZ11A STMicroelectronics Shortform Data Book 1988 Scan
BUZ11A Vishay Siliconix Shortform Siliconix Datasheet Scan
BUZ11ACHIP STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor DIE Scan
BUZ11AL Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) Original
BUZ11AL Toshiba Power MOSFETs Cross Reference Guide Original
Showing first 20 results.

BUZ11A

Catalog Datasheet MFG & Type PDF Document Tags

buz11a circuit

Abstract: BUZ11A BUZ11A ® N - CHANNEL 50V - 0.045 - 26A TO-220 STripFETTM MOSFET T YPE BUZ11A s s s s , characterized in this datasheet. July 1999 1/8 BUZ11A THERMAL DATA R thj -case R thj -amb , 95 50 20 Max. Unit ns ns ns ns BUZ11A ELECTRICAL CHARACTERISTICS (continued) SOURCE , duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance 3/8 BUZ11A Output , Charge vs Gate-source Voltage Capacitance Variations 4/8 BUZ11A Normalized Gate Threshold
STMicroelectronics
Original
buz11a circuit st buz11a ISD 1400 d BUZ11A data P011C

BUZ11A

Abstract: buz11a circuit BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A s s s s s s s V , Tj Value 90 W -65 to 175 o C 175 o C E 55/150/56 1/7 BUZ11A , DD = 30 V R GS = 50 ID = 3 A V GS = 10 V Min. BUZ11A ELECTRICAL CHARACTERISTICS , Impedance Derating Curve Output Characteristics 3/7 BUZ11A Transfer Characteristics , Gate-Source Voltage Capacitance Variation 4/7 BUZ11A Normalized Gate Threshold Voltage vs
STMicroelectronics
Original

BUZ11A

Abstract: buz11a circuit BUZ11A ® N - CHANNEL 50V - 0.045 - 26A TO-220 STripFETTM MOSFET TYPE BUZ11A s s s s s , in this datasheet. July 1999 1/8 BUZ11A THERMAL DATA R thj-case R thj-amb Thermal , BUZ11A ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symbol Parameter Test , Safe Operating Area Thermal Impedance 3/8 BUZ11A Output Characteristics Transfer , Capacitance Variations 4/8 BUZ11A Normalized Gate Threshold Voltage vs Temperature Normalized On
STMicroelectronics
Original
datecode G1

BUZ11A

Abstract: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS s s s s s s s ID 50 V BUZ11A R DS( on) < 0.055 27 A TYPICAL RDS(on) = 0.048 AVALANCHE RUGGED , ) November 1996 90 W -65 to 175 o C 175 o C E 55/150/56 1/7 BUZ11A , = 3 A V GS = 10 V Min. BUZ11A ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE , Characteristics 3/7 BUZ11A Transfer Characteristics Transconductance Static Drain-Source On
STMicroelectronics
Original

BUZ11

Abstract: stmicroelectronics datecode BUZ11A ® N - CHANNEL 50V - 0.045 - 26A -TO-220 STripFETTM POWER MOSFET T YPE s s s s s V DSS R DS(o n) ID 50 V BUZ11A < 0.055 26 A TYPICAL RDS(on) = 0.045 , Z or K identifies silicon characterized in this datasheet. August 1998 1/6 BUZ11A THERMAL , BUZ11A ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symb ol I SD Parameter Test , 3/6 BUZ11A Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive
STMicroelectronics
Original
BUZ11 stmicroelectronics datecode

BUZ11A

Abstract: fZ 7 SCS-THOMSON [ * 03( & E g ï i » [ * S BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ11A V DSS ^DS(on) 50 V 0.06 ß Id 25 A · · · · HIGH CURRENT ULTRA FAST , tot Tstg TJ June 1988 1/4 173 BUZ11A THERMAL DATA Rthj. case Thermal resistance , ns ns ns 2/4 r Z 7 SCS-THOMSON 174 BUZ11A ELECTRICAL CHARACTERISTICS (Continued , / / / / / / / / t V0S=25V / y 1 3/4 * 7 / . m aeautntiNMe» rz 7 SCS-THOMSON 175 BUZ11A
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OCR Scan

BUZ11 motorola

Abstract: BUZ11 75 and 90 A · L ow D rive R eq u ire m e n t - VGS{th) = 4 V m ax · · · · BUZ11 BUZ11A TM O S , Symbol V d SS V d GR Vg S Id 'd m Pd TJ ' Tstg 30 120 75 0.6 - 5 5 to 150 BUZ11 50 50 ± 20 25 100 BUZ11A , Diode Forward Turn-On Time Reverse Recovery Time BUZ11 BUZ11A BUZ11 BUZ11A BUZ11 BUZ11A llg = Rated , M ax j Unit j VGSIth» r DS , MOSFET DATA 3 -68 BUZ11, A BUZ11 BUZ11A V q $, DRAIN-TO-SOURCE VOLTAGE (VOLTS' Figure 1
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OCR Scan
BUZ11 motorola

BUZ11A

Abstract: TRANSISTORS V dss R DS(on) Id BUZ11A 50 V < 0.055 a 27 A TYPICAL R Ds(on) = 0.048 Q AVALANCHE , November 1996 1/7 BUZ11A THERMAL R lh j - c a s e R lh j -a m b DATA Therm al Therm al , ns ns 2/7 / I T SGS-THOMSON *T# nfloemiuiCirRMCs BUZ11A ELECTRICAL CHARACTERISTICS , RKHsiiiLiieiragrcioes / I T SGS-THOMSON 3/7 BUZ11A Transfer Characteristics T ransconductance Static , Capacitance Variation 4/7 / I T SGS-THOMSON *T# nfloemiuiCirRMCs BUZ11A Normalized Gate Threshold
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OCR Scan
Abstract: BUZ11A N - CHANNEL 50V - 0.045ft - 26A -TO-220 STripFETâ"¢ POWER MOSFET TYPE BUZ11 A V Id , characterized in this datasheet. August 1998 1/6 BUZ11A THERMAL DATA Rth j-c a se R th j-a m b T , 10 gs V Min. Typ. 18 95 50 20 Max. Unit ns ns ns ns BUZ11A ELECTRICAL , (*) Pulsed: Pulse duration = 3 0 0 jxs, duty cycle 1.5 % 3/6 BUZ11A Fig. 1: Unclamped Inductive Load , And Diode Recovery Times 4/6 BUZ11A T0-220 MECHANICAL DATA mm DIM. MIN. inch TYP -
OCR Scan
Abstract: transistor _ _ BUZ11A_ N AMER PHILIPS/DISCRETE ObE D â , - m C PowerMOS transistor " _ BUZ11A_ _ b b S a ^ l 00143Tfl , ~ AUER PHILIPS/DISCRETE ObE D BUZ11A bbS3131 0014400 1 .T-39-11 vSD (V) Fig. 12 Forward , AMER PHILIPS/DISCRETE ObE D â  BUZ11A _ bbSBTBl 0014401 0 L. 87 T-39-11 -
OCR Scan
00143T S3131

K 3911

Abstract: transistor k 3911 PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ11A QhE D â  1^53131 001431S T f T , BUZ11A ObE D b(353^31 00143^ â¡ RATINGS Limiting values in accordance with the Absolute Maximum , PHILIPS/DISCRETE BUZ11A ObE D â  bbS3131 00143Tâ M . T-39-11 Fig. 2 Power dissipation Pp = f(Tmb). , transistor BUZ11A N AMER PHILIPS/DISCRETE OLE D â  bbSBTBl OOman b â  T-39-11 j , ~ 10 mA. 85 This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ11A N
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OCR Scan
T0220AB K 3911 transistor k 3911 transistor 86 y 87 PAD35 T0220 D01HM01 7Z21186

BUZ11A

Abstract: / T T S G S -T H O M S O N * 7 /, « oe i L I © ï ï [ M ] 0(S§ B U Z11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ11A V DSS R DS(on) 50 V 0.06 fi 25 A , climatic category (DIN IEC 68-1) W °C °C "^stg Ti June 1988 1/4 173 BUZ11A THERMAL , VDS= Max Rating VDS= Max Rating 250 1000 BUZ11A ELECTRICAL CHARACTERISTICS (Continued , Transfer characteristics T ransconductance -4 -^ - SCS-THOMSON 3/4 175 BUZ11A Static
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OCR Scan

BUZ11A

Abstract: BUZ11 H SiSconix in c o r p o r a te d BUZ11A N-Channel Enhancement Mode Transistor TO -220A B TOP VIEW PRODUCT SUMMARY V (BR)DSS r DS(ON) d o (V) 50 , transient thermal impedance data, Figure 11). BUZ11A ELECTRICAL C HARACTERISTICS (T j = Jm Æ , d BUZ11A TYPICAL CHAR A C TERISTICS (25 °C Unless Otherwise Specified) Figure 1. Output , Og - TOTAL GATE CHARGE (nC) 4-7 BUZ11A TYPICAL C HA RA CTERISTICS (C ont'd) Figure 7
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OCR Scan
Abstract: * 7 # . iMnaoiiLiCTisiMnei_ BUZ11A c h ip N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 156x156 mils Al A u /C r/N i/A u 6100 /= T SGS-THOMSON A 16 ± 2 mils P-Vapox 40 x 34 mils 1 5 x 1 9 mils V DSS ^DS (on) 'd * RECOMMENDED WIRE BONDING , on backside * With R,hj^ max. 1.67°C/W June 1988 1/2 641 BUZ11A CHIP GUARANTEED PROBED -
OCR Scan
C-0071

PVAPOX

Abstract: ^7#» ÄMILtKgTOOMlgi /=T SGS-THOMSON BUZ11A CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 156x156 mils Al A u /C r/N i/A u 6100 A 16 ± 2 mils P-Vapox 40 x 34 mils 1 5 x1 9 mils RECOMMENDED WIRE BONDING: Source Al - max 15 mils Gate Al - max 7 mils N-channel , Drain on backside * W ith Rthj< m ax. 1 .6 7 °C /W June 1988 1/2 641 BUZ11A CHIP
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OCR Scan
PVAPOX MC-0074
Abstract: 3 GE » _ _ â  7 = 1 2 ^ 2 3 7 Ã03D120 2 â  [ Z J S GS-THOMSON 'T '-3 ,C )M ( > 6 s-thomson/ [^D (g^(Q )g[Lg(gÂ¥^(Q © _ BUZ11A CHIP )^D S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 6100 , 641 BUZ11A CHIP ® ® 7^2^237 QQiG121_ S G S-THOMSON GUARANTEED PROBED ELECTRICAL -
OCR Scan
C-0074

BUZ11A

Abstract: 30E ]>_â _ TW 23? 003D12Q 2 â  T^S^-lf rrz SGS-THOMSON s fi S-THOMSON ' _BUZ11A CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back Au/Cr/Ni/Au BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE: Source 40x34 mils Gate 15x19 mils RECOMMENDED WIRE BONDING: Source Al - max 15 mils Gate , Rthj^, max. 1,67°C/W June 1988 1/2 641 BUZ11A CHIP_3QE D m 7*^5^537 0030121. M â _ S G
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OCR Scan

c5353

Abstract: Z11A SGS-THOMSON ID O S BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A V dss 50 V R dS{oi1 ) 0.055 a Id 27 A . . . . . . AVALANC HE RUG G EDNESS TECHNO LOG Y 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURR ENT CAPABILITY 175°C O PERATING TEM PERATURE APP LICATIO NS . HIGH CURRENT, HIGH SPEED SW ITCHING . SO LENOID AND RELAY DRIVERS . REGULATORS . DC-DC & DC-AC CONVERTERS . MOTOR CO NTROL, AUDIO AM PLIFIERS . AU TO M OTIVE
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OCR Scan
c5353 Z11A C23A90 C53530

mtp25n06

Abstract: MTP12P05 12.5 MTP25N05 25 10C 0.06 15 BUZ11A 25 75 0.04 BUZ11 30 â'¢Indicates P-Channel Plastic TMOS
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OCR Scan
IRF523 IRF521 MTP10N06 IRF533 MTP12N06 IRF531 mtp25n06 MTP12P05 MTP3055A MTP14N05A MTP15N06 MTP5N05 T0-220AB MTP12P06

BSS97

Abstract: 2SK564 SÉSECOSIPMOSSnplcffllz., £ffiMOS-FET©*>J8ffifiD»i!\ « â'¢Â©ÃTfVÃS ín; â'¢ UPS ídc/dc^W^-mam&ñ&m SIPMOS-FETM^tt-K â â â â  lo OA) ti* f>r nu, tofsn â â â â  â â i BSS110 P 50 -0.2 -0.17 0.63 6.0 10.0 T092 BSS98 N 0.4 0.3 0.63 2.0 3.5 T092 BUZ71L N 20 14 40 0.06 0.1 T0220 BUZ71 N 20 12 40 0.09 0.1 ECONOFET T0220 BUZ10 N 32 23 75 0.06 0.07 ECONOFET T0220 BUZ11A N 37 26 75 0.048 0.055 ECONOFET T0220 BUZ11 N 43 30 75 0.03 0.04 T0220 2SK562
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OCR Scan
BUZ348 BSS100 2SK564 BSS101 BSS95 BSS97 J3303 2SK616 buz349 2SK562A BUZ347 2SK905 BUZ72

buz11

Abstract: Buz 11 BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A s s s s s s s V , Tj Value 90 W -65 to 175 o C 175 o C E 55/150/56 1/7 BUZ11A , DD = 30 V R GS = 50 ID = 3 A V GS = 10 V Min. BUZ11A ELECTRICAL CHARACTERISTICS , Impedance Derating Curve Output Characteristics 3/7 BUZ11A Transfer Characteristics , Gate-Source Voltage Capacitance Variation 4/7 BUZ11A Normalized Gate Threshold Voltage vs
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OCR Scan
Buz 11 BUZ p channel 11S2 buz 11 a VPT05381 C67078-S1301-A2 C67078-S1301 C67078-S1301-A5 11/BUZ

11S2

Abstract: BUZ11 BUZ11A ® N - CHANNEL 50V - 0.045 - 26A TO-220 STripFETTM MOSFET TYPE BUZ11A s s s s s , in this datasheet. July 1999 1/8 BUZ11A THERMAL DATA R thj-case R thj-amb Thermal , BUZ11A ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symbol Parameter Test , Safe Operating Area Thermal Impedance 3/8 BUZ11A Output Characteristics Transfer , Capacitance Variations 4/8 BUZ11A Normalized Gate Threshold Voltage vs Temperature Normalized On
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OCR Scan
BUZ11S2 C67078-A1301-A2 C67078-S1301-A3 11/11A SI10000115 SIL0000116 SIL0000117

buz11

Abstract: BUZ11A BUZ11A N - CHANNEL 50V - 0.045ft - 26A -TO-220 STripFETâ"¢ POWER MOSFET TYPE BUZ11 A V Id , characterized in this datasheet. August 1998 1/6 BUZ11A THERMAL DATA Rth j-c a se R th j-a m b T , 10 gs V Min. Typ. 18 95 50 20 Max. Unit ns ns ns ns BUZ11A ELECTRICAL , (*) Pulsed: Pulse duration = 3 0 0 jxs, duty cycle 1.5 % 3/6 BUZ11A Fig. 1: Unclamped Inductive Load , And Diode Recovery Times 4/6 BUZ11A T0-220 MECHANICAL DATA mm DIM. MIN. inch TYP
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OCR Scan
transistor Buz 11
Abstract: 75 and 90 A · L ow D rive R eq u ire m e n t - VGS{th) = 4 V m ax · · · · BUZ11 BUZ11A TM O S , Symbol V d SS V d GR Vg S Id 'd m Pd TJ ' Tstg 30 120 75 0.6 - 5 5 to 150 BUZ11 50 50 ± 20 25 100 BUZ11A , Diode Forward Turn-On Time Reverse Recovery Time BUZ11 BUZ11A BUZ11 BUZ11A BUZ11 BUZ11A llg = Rated , M ax j Unit j VGSIth» r DS , MOSFET DATA 3 -68 BUZ11, A BUZ11 BUZ11A V q $, DRAIN-TO-SOURCE VOLTAGE (VOLTS' Figure 1 -
OCR Scan
G67078-S1301

BUZ11A

Abstract: C67078-S1301-A3 BUZ11A ® N - CHANNEL 50V - 0.045 - 26A -TO-220 STripFETTM POWER MOSFET T YPE s s s s s V DSS R DS(o n) ID 50 V BUZ11A < 0.055 26 A TYPICAL RDS(on) = 0.045 , Z or K identifies silicon characterized in this datasheet. August 1998 1/6 BUZ11A THERMAL , BUZ11A ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symb ol I SD Parameter Test , 3/6 BUZ11A Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive
Siemens
Original
Showing first 20 results.