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Part : BUZ11_NR4941 Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : 395 Best Price : - Price Each : -
Part : BUZ11_NR4941 Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : 75,800 Best Price : €0.3616 Price Each : €0.5624
Part : BUZ11_NR4941 Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.4779 Price Each : $0.5461
Part : BUZ11 Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : BUZ11_NR4941 Supplier : Fairchild Semiconductor Manufacturer : Newark element14 Stock : 344 Best Price : $0.5170 Price Each : $1.26
Part : BUZ11_NR4941 Supplier : Fairchild Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.51 Price Each : $0.51
Part : BUZ111S Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 3,249 Best Price : $0.87 Price Each : $1.07
Part : BUZ111SL-E3045A Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 2,000 Best Price : $0.87 Price Each : $1.07
Part : BUZ111SLE3045A Supplier : Siemens Manufacturer : Rochester Electronics Stock : 2,000 Best Price : $0.87 Price Each : $1.07
Part : BUZ11S2537 Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 800 Best Price : $0.50 Price Each : $0.62
Part : BUZ11 Supplier : Harris Semiconductor Manufacturer : Bristol Electronics Stock : 79 Best Price : $0.4875 Price Each : $0.75
Part : BUZ11 Supplier : National Semiconductor Manufacturer : Bristol Electronics Stock : 10 Best Price : $0.8250 Price Each : $0.8250
Part : BUZ11_NR4941 Supplier : Fairchild Semiconductor Manufacturer : RS Components Stock : 450 Best Price : £0.3990 Price Each : £0.6140
Part : BUZ11_NR4941 Supplier : Fairchild Semiconductor Manufacturer : RS Components Stock : 1,154 Best Price : £0.7660 Price Each : £0.7660
Part : BUZ11_NR4941 Supplier : Fairchild Semiconductor Manufacturer : RS Components Stock : 1,145 Best Price : £0.7660 Price Each : £0.9180
Part : BUZ11 Supplier : Siemens Manufacturer : ComSIT Stock : 8,682 Best Price : - Price Each : -
Part : BUZ110SLE3045A Supplier : Infineon Technologies Manufacturer : ComSIT Stock : 3,000 Best Price : - Price Each : -
Part : BUZ11A Supplier : STMicroelectronics Manufacturer : ComSIT Stock : 4,024 Best Price : - Price Each : -
Part : BUZ11_NR4941 Supplier : ON Semiconductor Manufacturer : TME Electronic Components Stock : 2,252 Best Price : $0.34 Price Each : $0.66
Part : BUZ-11A Supplier : STMicroelectronics Manufacturer : Chip One Exchange Stock : 14 Best Price : - Price Each : -
Part : BUZ11 Supplier : HARTING Manufacturer : Chip One Exchange Stock : 93 Best Price : - Price Each : -
Part : BUZ111S Supplier : Infineon Technologies Manufacturer : Chip One Exchange Stock : 358 Best Price : - Price Each : -
Part : BUZ11_NR4941 Supplier : Fairchild Semiconductor Manufacturer : Chip1Stop Stock : 1,574 Best Price : $0.7688 Price Each : $1.1512
Part : BUZ11_NR4941 Supplier : Fairchild Semiconductor Manufacturer : element14 Asia-Pacific Stock : 2,347 Best Price : $0.61 Price Each : $1.6320
Part : BUZ11_NR4941 Supplier : Fairchild Semiconductor Manufacturer : Farnell element14 Stock : 2,758 Best Price : £0.5890 Price Each : £1.15
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BUZ11 Datasheet

Part Manufacturer Description PDF Type
BUZ11 Fairchild Semiconductor TRANS MOSFET N-CH 50V 30A 3TO-220AB Original
BUZ11 Harris Semiconductor Power MOSFET Selection Guide Original
BUZ11 Intersil 30A, 50V, 0.040 ?, N-Channel Power MOSFET Original
BUZ11 Philips Semiconductors PowerMOS Transistor Original
BUZ11 Siemens SIPMOS Power Transistorm (N channel Enhancement mode Avalanche-rated) Original
BUZ11 STMicroelectronics N-Channel 50V - 0.03Ohm - 33A TO-220 STripFET MOSFET Original
BUZ11 STMicroelectronics N-Channel 50 V-0.03 ohm-33 A TO-220 STripFET MOSFET Original
BUZ11 STMicroelectronics N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS Original
BUZ11 Toshiba Power MOSFETs Cross Reference Guide Original
BUZ11 Harris Semiconductor Power MOSFET Data Book 1990 Scan
BUZ11 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan
BUZ11 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 50V, 30A, Pkg Style TO-220AB Scan
BUZ11 Motorola Switchmode Datasheet Scan
BUZ11 Motorola European Master Selection Guide 1986 Scan
BUZ11 N/A Shortform Transistor PDF Datasheet Scan
BUZ11 N/A Shortform Datasheet & Cross References Data Scan
BUZ11 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
BUZ11 N/A Semiconductor Master Cross Reference Guide Scan
BUZ11 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BUZ11 N/A FET Data Book Scan
Showing first 20 results.

BUZ11

Catalog Datasheet MFG & Type PDF Document Tags

buz11

Abstract: buz11 motor control 7 SCS-THOMSON Ä 7# RKMilLifgTM «! rz BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI I V dss RüS(on) Id 50 V 50 V 0.04 Q 0.04 n 36 A 20 A AVALANCHE , aram eter BUZ11 V ds V dgr V gs Id I dm P lo t T s tg Value BUZ11FI 50 50 ± 20 36 144 120 -65 to , 50 °C for TO-220 May 1992 1/5 BUZ11/FI THERMAL DATA TO-220 Rthj-case Rthj-amb , 260 140 Unit ns ns ns ns 2/5 A 7f rZ Z SGS-THOMSON BUZ11/FI ELECTRICAL
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OCR Scan
GC35620 buz11 motor control BUZ11 avalanche airbag ISOWATT220 BUZ11/FI CC35701 T0-220 CC205S1 GC23160

BUZ11

Abstract: buz11 equivalent BUZ11 ® N - CHANNEL 50V - 0.03 - 33A TO-220 STripFETTM MOSFET T YPE BUZ 11 s s s s s , characterized in this datasheet. July 1999 1/8 BUZ11 THERMAL DATA R thj -case R thj -amb Thermal , 200 220 110 Max. Unit ns ns ns ns BUZ11 ELECTRICAL CHARACTERISTICS (continued , BUZ11 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 BUZ11 Normalized Gate
STMicroelectronics
Original
buz11 equivalent BUZ11 in electronic pulse schematic 620 tg diode datecode G1 mosfet schematic solenoid driver stmicroelectronics datecode TO-220 P011C

BUZ11 motorola

Abstract: BUZ11 75 and 90 A · L ow D rive R eq u ire m e n t - VGS{th) = 4 V m ax · · · · BUZ11 BUZ11A TM O S , Symbol V d SS V d GR Vg S Id 'd m Pd TJ ' Tstg 30 120 75 0.6 - 5 5 to 150 BUZ11 50 50 ± 20 25 100 BUZ11A , Diode Forward Turn-On Time Reverse Recovery Time BUZ11 BUZ11A BUZ11 BUZ11A BUZ11 BUZ11A llg = Rated , M ax j Unit j VGSIth» r DS , MOSFET DATA 3 -68 BUZ11, A BUZ11 BUZ11A V q $, DRAIN-TO-SOURCE VOLTAGE (VOLTS' Figure 1
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OCR Scan
BUZ11 motorola
Abstract: ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V dss BUZ11 BUZ11FI 50 V 50 V RDS(on) < 0.04 , ) o c ( 1) oâ'" S (3 ) ABSOLUTE MAXIMUM RATINGS Symbol P aram eter V alue BUZ11 V ds V dgr V gs Id I dm BUZ11FI D rain-source V oltage (V gs = 0) 50 V D rain , 175 °c E 55/150/56 1/8 BUZ11/FI THERMAL DATA TO -220 Rthj-case Rthj-amb Therm al , gs 7 SGS-THOMSON ^ 7# RiiieR iiLii£iîR (iaies ® ® Min. BUZ11/FI ELECTRICAL -
OCR Scan
ISQWATT220

BUZ11

Abstract: BUZ11FI BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS s s s s s s s ID 50 V 50 V BUZ11 BUZ11FI R DS( on) < 0.04 < 0.04 36 A 21 A TYPICAL , MAXIMUM RATINGS Symbol Parameter Value BUZ11 VD S V DG R V GS ID Drain-source Voltage (V GS = 0) Unit BUZ11FI 50 50 Gate-source Voltage o V ± 20 Drain- gate Voltage (R , ) November 1996 V -65 to 175 o C 175 o C E 55/150/56 1/8 BUZ11/FI THERMAL DATA
STMicroelectronics
Original
C3621 P011G
Abstract: instructions for TO220 envelopes. 74 UNIT V A W n PowerMOS transistor BUZ11_ , â'" ns â'" 0,25 _ mC PowerMOS transistor _ ._ _ BUZ11_ , transistor 8q._ _ BUZ11_ _ N. AMER PHILIPS/DISCRETE ObE , _ N AMER PHILIPS/DISCRETE QbE D 79 BUZ11_ _ â  bbS3T31 00143^3 S â , N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor â  bfc,S3^31 0014366 1 â  BUZ11 -
OCR Scan
S3131 IEC134 0D143T1 00143TE T-39-11 S3T31

buz11 equivalent

Abstract: BUZ11FI BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI s s s , MAXIMUM RATINGS Symbol Parameter Value BUZ11 VD S V DG R V GS ID Drain-source Voltage (V GS = 0) Unit BUZ11FI 50 50 Gate-source Voltage o V ± 20 Drain- gate Voltage (R , ) May 1993 V -65 to 175 o C 175 o C E 55/150/56 1/8 BUZ11/FI THERMAL DATA , Conditions V DD = 30 V R GS = 50 ID = 3 A V GS = 10 V Min. BUZ11/FI ELECTRICAL CHARACTERISTICS
STMicroelectronics
Original

BUZ11

Abstract: buz11 equivalent BUZ11 ® N - CHANNEL 50V - 0.03 - 33A TO-220 STripFETTM MOSFET TYPE BUZ11 s s s s s , in this datasheet. July 1999 1/8 BUZ11 THERMAL DATA R thj-case R thj-amb Thermal , Max. Unit ns ns ns ns BUZ11 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE , = 300 us, duty cycle 1.5 % Safe Operating Area Thermal Impedance 3/8 BUZ11 Output , Charge vs Gate-source Voltage Capacitance Variations 4/8 BUZ11 Normalized Gate Threshold
STMicroelectronics
Original

BUZ11

Abstract: TB334 BUZ11 Data Sheet June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features This , Ordering Information PART NUMBER BUZ11 PACKAGE TO-220AB · Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" BRAND BUZ11 NOTE: When ordering, use the , BUZ11 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg BUZ11 50 50 30 120 ±20 75
Intersil
Original
TA9771 ISO9000

TA9771

Abstract: buz11 intelai I Data S heet Ju n e 1999 BUZ11 F ile N u m b e r 2253.2 30A, 50V, 0.040 Ohm , Information PART NUMBER BUZ11 PACKAGE TO-220AB BUZ11 BRAND · Related Literature - TB 334 "Guidelines for , rp o ra tio n 1999 N-CHANNEL STANDARD GATE BUZ11 Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1 ) . , -8 in t e ik il BUZ11 Typical Performance Curves Unless Otherwise Specified Ta , CASE
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OCR Scan

TA9771

Abstract: BUZ11 BUZ11 Semiconductor Data Sheet 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET October 1998 , gate power · rDS(ON) = 0.040 (BUZ11 field effect transistor designed for applications such as · SOA , Boards" BUZ11 TO-220AB BUZ11 MOSNOTE: When ordering, use the entire part number. FET) Symbol , IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ11 TC = 25oC , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg BUZ11 50 50 30
Harris Semiconductor
Original

BUZ11

Abstract: buz11 1d SCS-THOMSON BUZ11 BUZ11 Fl N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Vdss R DS(on) Id BUZ11 BUZ11FI 50 V 50 V < 0.04 Q. < 0.04 Q. 36 A 21 A . TYPICAL RDS(on) = 0.03 £2 . AVALANCHE RUGGED , ) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUZ11 BUZ11FI Vos Drain-source Voltage (Vgs = 0 , EC Climatic Category (DIN I EC 68-1) 55/150/56 November 1996 1/8 BUZ11/FI THERMAL DATA TO , 2/8 SGS-THOMSON BUZ11/FI ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symbol Parameter
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OCR Scan
buz11 1d 2M236 BUZ11F

TA9771

Abstract: BUZ11 Semiconductor Data Sheet June 1999 File Number 2253.2 30A, 50 V , 0.040 Ohm , Information PART NUM BER BUZ11 PACKAGE TO-22QAB BUZ11 BRAND · Related Literature - TB334 "Guidelines for , orporation 1999 BUZ11 Absolute Maximum Ratings Tc = 25°c, Unless Otherwise Specified BUZ11 UNITS , EST CO NDITIONS MIN TYP 1.7 200 0.25 M AX 30 120 2.6 UNITS A A V ns HC 4-6 BUZ11 Typical , F IG U R E S . O UTPUT CHARACTERISTICS 4-7 BUZ11 Typical Performance Curves < iz LU DC DC
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OCR Scan
1-800-4-H

buz11 application note

Abstract: Z11B ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI · · · · V DSS ^DS(on) ·d 50 V 50 V 0.04 , 1/5 167 BUZ11 - BUZ11FI THERMAL D A TA Rthj . case Thermal resistance junction-case R,hj , this datasheet 2/5 " 7/. 168 Æ 7 SGS-THOMSON MOEMIILSCTBBSIlie® BUZ11 - BUZ11FI ELECTRICAL , ransconductance 10 15 lp(A) SGS-THOMSON 3/5 169 BUZ11 - BUZ11FI Static drain-source on , diode forward characteristics 0*. OS 1? 16 V y jiV I 4/5 170 BUZ11 - BUZ11FI
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OCR Scan
buz11 application note Z11B ISOWATT22Q

BUZ11

Abstract: buz11 equivalent BUZ11 ® N - CHANNEL 50V - 0.03 - 30A -TO-220 STripFETTM POWER MOSFET T YPE s s s s s V DSS R DS(o n) ID 50 V BUZ11 < 0.04 30 A TYPICAL RDS(on) = 0.03 AVALANCHE , silicon characterized in this datasheet. August 1998 1/6 BUZ11 THERMAL DATA R t hj-ca se R t , D = 18 A V GS = 10 V Min. Typ . 40 200 220 110 Max. Un it ns ns ns ns BUZ11 , BUZ11 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3
STMicroelectronics
Original
Abstract: BUZ11 N - CHANNEL 50V - 0.03ft - 30A -TO-220 STripFETâ"¢ POWER MOSFET TYPE BUZ11 V R , characterized in this datasheet. August 1998 1/6 BUZ11 THERMAL DATA Rth j-c a se T h e rm a l R , BUZ11 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Sym bol ISD ISDM VsD , 75 ns 0 .2 4 ne (*) Pulsed: Pulse duration = 3 0 0 jxs, duty cycle 1.5 % 3/6 BUZ11 , Circuit For Inductive Load Switching And Diode Recovery Times 4/6 BUZ11 T0-220 MECHANICAL DATA -
OCR Scan

TT220

Abstract: TT 220 F Z J S G S -T H O M S O N BUZ11 M@MiLgCT»n©i_ BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI V DSS ^D S(on) 30 A 20 A 50 V 50 V , in this datasheet June 1988 1/5 167 BUZ11 - BUZ11FI THERM AL D A T A Rth j. case Therm al , # u ifstfæ-iliLgicT^MO'ùâ- 168 BUZ11 - BUZ11FI ELECTRICAL CHA RA CTERISTICS (Continued) Param , ransconductance /= T SGS-THOMSON 3/5 169 BUZ11 - BUZ11FI Static drain-source on resistance M axim um
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OCR Scan
TT220 TT 220 ATT220
Abstract: SGS-THOMSON oe y ® [ E J O T ( Q * S BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI V dss R dS(oii) 0.04 Li 0.04 LI Id 50 V 50 V 36 A 20 A . . . , o l P ara m ete r BUZ11 Vos V dgr V gs Value BUZ11FI 50 50 ± 20 36 144 120 -65 to 1 75 175 20 , dm Pt oi Tstg Tj 55/150/56 '(#) Tc = 50 °cTtor TO -22C T May 1992 1/5 65 BUZ11 , BUZ11/FI Derating Curve F orT O -220 Derating Curve For ISOW ATT220 O utput Characteristics -
OCR Scan
ISOWATT22
Abstract: Ordering Information PART NUMBER BUZ11_NR4941 PACKAGE TO-220AB â'¢ Related Literature - TB334 â'Guidelines for Soldering Surface Mount Components to PC Boardsâ' BRAND BUZ11 Symbol NOTE: When , BUZ11 Data Sheet September 2013 N-Channel Power MOSFET 50V, 30A, 40 mâ"¦ 2253.2 , DRAIN (FLANGE) ©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0 BUZ11 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ11 UNITS 50 50 30 V V A Gate to Fairchild Semiconductor
Original

buz11 application note

Abstract: BUZ11 BUZ11 Data Sheet June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET [ /Title (BUZ1 1 , Information PART NUMBER BUZ11 PACKAGE TO-220AB · Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" BRAND BUZ11 NOTE: When ordering, use the entire , ) ©2001 Fairchild Semiconductor Corporation BUZ1 Rev. A BUZ11 Absolute Maximum Ratings TC = , ID BUZ11 50 50 30 UNITS V V A Pulsed Drain Current (Note 3) . . . . . . . . . . . . .
Fairchild Semiconductor
Original
BUZ1
Abstract: BUZ11 ® N - CHANNEL 50V - 0.03 - 33A TO-220 STripFETTM MOSFET T YPE BUZ 11 s s s s s , characterized in this datasheet. July 1999 1/8 BUZ11 THERMAL DATA R thj -case R thj -amb Thermal , 200 220 110 Max. Unit ns ns ns ns BUZ11 ELECTRICAL CHARACTERISTICS (continued , BUZ11 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 BUZ11 Normalized Gate -
OCR Scan
G67078-S1301
Abstract: ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V dss BUZ11 BUZ11FI 50 V 50 V RDS(on) < 0.04 , ) o c ( 1) oâ'" S (3 ) ABSOLUTE MAXIMUM RATINGS Symbol P aram eter V alue BUZ11 , 175 °c E 55/150/56 1/8 BUZ11/FI THERMAL DATA TO -220 Rthj-case Rthj-amb Therm al , gs 7 SGS-THOMSON ^ 7# RiiieR iiLii£iîR (iaies ® ® Min. BUZ11/FI ELECTRICAL , ISOWATT22Q r Z 7 SGS-THOMSON ^ 7# RiiieR iiLii£iîR (iaies ® ® 3/8 BUZ11/FI Derating -
OCR Scan
C67078-S1301-A2 D064013

buz11

Abstract: Buz 11 BUZ11 Data Sheet June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features This , Ordering Information PART NUMBER BUZ11 PACKAGE TO-220AB · Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" BRAND BUZ11 NOTE: When ordering, use the , BUZ11 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg BUZ11 50 50 30 120 ±20 75
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OCR Scan
Buz 11 BUZ p channel 11S2 buz 11 a VPT05381 C67078-S1301 C67078-S1301-A5 11/BUZ

C67078-S1330-A3

Abstract: BUZ11 S2 N ot fo r new design Drain-source breakdown voltage ^(BR)DSS = / ( 7j) V -60 -20
Siemens
Original
C67078-S1330-A3

transistor Buz 11

Abstract: BUZ11 Semiconductor Data Sheet 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET October 1998 , gate power · rDS(ON) = 0.040 (BUZ11 field effect transistor designed for applications such as · SOA , Boards" BUZ11 TO-220AB BUZ11 MOSNOTE: When ordering, use the entire part number. FET) Symbol , IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ11 TC = 25oC , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg BUZ11 50 50 30
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OCR Scan
transistor Buz 11 SIL02825

-11-S-2

Abstract: 11S2 BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS s s s s s s s ID 50 V 50 V BUZ11 BUZ11FI R DS( on) < 0.04 < 0.04 36 A 21 A TYPICAL , MAXIMUM RATINGS Symbol Parameter Value BUZ11 VD S V DG R V GS ID Drain-source Voltage (V , ) November 1996 V -65 to 175 o C 175 o C E 55/150/56 1/8 BUZ11/FI THERMAL DATA , Conditions V DD = 30 V R GS = 50 ID = 3 A V GS = 10 V Min. BUZ11/FI ELECTRICAL CHARACTERISTICS
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OCR Scan
BUZ11S2 C67078-A1301-A2 C67078-S1301-A3 11/11A SI10000115 SIL0000116 SIL0000117
Showing first 20 results.