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BUZ11 Datasheet

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BUZ11 N/A Shortform Transistor PDF Datasheet
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1 pages,
161.77 Kb

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BUZ11 N/A Shortform Datasheet & Cross References Data
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1 pages,
84.86 Kb

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BUZ11 Intersil Corporation Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 50V, 30A, Pkg Style TO-220AB
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1 pages,
29.42 Kb

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BUZ11 Motorola Switchmode Datasheet
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1 pages,
51.17 Kb

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BUZ11 Vishay Siliconix Shortform Siliconix Datasheet
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1 pages,
155.93 Kb

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BUZ11A N/A Shortform Datasheet & Cross References Data
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1 pages,
84.86 Kb

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BUZ11A Motorola Switchmode Datasheet
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1 pages,
51.17 Kb

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BUZ11A Vishay Siliconix Shortform Siliconix Datasheet
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1 pages,
155.93 Kb

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BUZ11AL N/A Shortform Datasheet & Cross References Data
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1 pages,
84.86 Kb

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BUZ11F1 N/A Shortform Datasheet & Cross References Data
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1 pages,
84.86 Kb

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BUZ11

Catalog Datasheet Results Type PDF Document Tags
Abstract: 7 SCS-THOMSON Ä 7# RKMilLifgTM «! rz BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI I V dss RüS(on) Id 50 V 50 V 0.04 Q 0.04 n 36 A 20 A AVALANCHE , aram eter BUZ11 V ds V dgr V gs Id I dm P lo t T s tg Value BUZ11FI 50 50 ± 20 36 144 120 -65 to , 50 °C for TO-220 May 1992 1/5 BUZ11/FI THERMAL DATA TO-220 Rthj-case Rthj-amb , 260 140 Unit ns ns ns ns 2/5 A 7f rZ Z SGS-THOMSON BUZ11/FI ELECTRICAL ... OCR Scan
datasheet

5 pages,
508.35 Kb

BUZ11 avalanche buz11 motor control buz11 BUZ11 BUZ11FI BUZ11 abstract
datasheet frame
Abstract: SILIC"NIX INC 1-E D -25M73S -25M73S 0014505 = 1 XKS3& BUZ11, BUZ11S2 T-3ft -1 1 N-Channel Enhancement Mode Transistors TQ-220AB TQ-220AB TO P VIEW O PRODUCT SUMMARY PART NUMBER BUZ11 BUZ11S2 V , T-39-11 T-39-11 BUZ11, BUZ11S2 PARAMETER STATIC Drain-Source Bfeakdown Voltage Gate Threshotd Voltage Gate-Body LeaKago Zero Gate Voltage Drain Current BUZ11 BUZ11S2 VpaiDss V qs(U i) ,g s s ÂlïSBte LIMITS , incorporated ii T -3 9 -1 1 BUZ11, BUZ11S2 TYPICAL CHARACTERISTICS (25°C Unless Otherwise Specified ... OCR Scan
datasheet

4 pages,
254.86 Kb

BUZ11s2 BUZ11 25M73S 25M73S abstract
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Abstract: 75 and 90 A · L ow D rive R eq u ire m e n t - VGS{th) = 4 V m ax · · · · BUZ11 BUZ11A TM O S , Symbol V d SS V d GR Vg S Id 'd m Pd TJ ' Tstg 30 120 75 0.6 - 5 5 to 150 BUZ11 50 50 ± 20 25 100 BUZ11A , Diode Forward Turn-On Time Reverse Recovery Time BUZ11 BUZ11A BUZ11 BUZ11A BUZ11 BUZ11A llg = Rated , M ax j Unit j VGSIth» r DS , MOSFET DATA 3 -68 BUZ11, A BUZ11 BUZ11A V q $, DRAIN-TO-SOURCE VOLTAGE (VOLTS' Figure 1. ... OCR Scan
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3 pages,
101.19 Kb

BUZ11 BUZ11 motorola datasheet abstract
datasheet frame
Abstract: SCS-THOMSON BUZ11 BUZ11 Fl N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Vdss R DS(on) Id BUZ11 BUZ11FI 50 V 50 V < 0.04 Q. < 0.04 Q. 36 A 21 A . TYPICAL RDS(on) = 0.03 £2 . AVALANCHE RUGGED , ) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUZ11 BUZ11FI Vos Drain-source Voltage (Vgs = 0 , Category (DIN I EC 68-1) 55/150/56 November 1996 1/8 BUZ11/FI THERMAL DATA TO-220 ISOWATT220 ISOWATT220 , = 30 V lD = 3 A Rgs = 50 Vgs = 10 V 40 145 220 135 60 210 320 200 ns ns ns ns 2/8 SGS-THOMSON BUZ11 ... OCR Scan
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7 pages,
247.61 Kb

BUZ11 avalanche buz11 1d BUZ11F BUZ11FI BUZ11 BUZ11 abstract
datasheet frame
Abstract: BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS s s s s s s s ID 50 V 50 V BUZ11 BUZ11FI R DS( on) < 0.04 < 0.04 36 A 21 A TYPICAL , MAXIMUM RATINGS Symbol Parameter Value BUZ11 VD S V DG R V GS ID Drain-source Voltage (V GS = 0) Unit BUZ11FI 50 50 Gate-source Voltage o V ± 20 Drain- gate Voltage (R , ) November 1996 V -65 to 175 o C 175 o C E 55/150/56 1/8 BUZ11/FI THERMAL DATA ... Original
datasheet

8 pages,
174.8 Kb

buz11 motor control BUZ11FI BUZ11 BUZ11 abstract
datasheet frame
Abstract: BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI s s s , MAXIMUM RATINGS Symbol Parameter Value BUZ11 VD S V DG R V GS ID Drain-source Voltage (V GS = 0) Unit BUZ11FI 50 50 Gate-source Voltage o V ± 20 Drain- gate Voltage (R , ) May 1993 V -65 to 175 o C 175 o C E 55/150/56 1/8 BUZ11/FI THERMAL DATA , Conditions V DD = 30 V R GS = 50 ID = 3 A V GS = 10 V Min. BUZ11/FI ELECTRICAL CHARACTERISTICS ... Original
datasheet

8 pages,
171.8 Kb

BUZ11 in electronic pulse schematic BUZ11 BUZ11FI buz11 equivalent BUZ11 abstract
datasheet frame
Abstract: BUZ11 ® N - CHANNEL 50V - 0.03 - 33A TO-220 STripFETTM MOSFET TYPE BUZ11 s s s s s , in this datasheet. July 1999 1/8 BUZ11 THERMAL DATA R thj-case R thj-amb Thermal , Max. Unit ns ns ns ns BUZ11 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE , = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance 3/8 BUZ11 Output , Charge vs Gate-source Voltage Capacitance Variations 4/8 BUZ11 Normalized Gate Threshold ... Original
datasheet

8 pages,
259.7 Kb

buz11 motor control BUZ11 in electronic pulse schematic buz11 equivalent BUZ11 BUZ11 abstract
datasheet frame
Abstract: BUZ11 ® N - CHANNEL 50V - 0.03 - 33A TO-220 STripFETTM MOSFET T YPE BUZ 11 s s s s s , characterized in this datasheet. July 1999 1/8 BUZ11 THERMAL DATA R thj -case R thj -amb Thermal , 200 220 110 Max. Unit ns ns ns ns BUZ11 ELECTRICAL CHARACTERISTICS (continued , BUZ11 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 BUZ11 Normalized Gate ... Original
datasheet

8 pages,
79.13 Kb

stmicroelectronics datecode TO-220 mosfet schematic solenoid driver datecode G1 620 tg diode BUZ11 BUZ11 in electronic pulse schematic buz11 equivalent BUZ11 abstract
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Abstract: intelai I Data S heet Ju n e 1999 BUZ11 F ile N u m b e r 2253.2 30A, 50V, 0.040 Ohm , Information PART NUMBER BUZ11 PACKAGE TO-220AB BUZ11 BRAND · Related Literature - TB 334 "Guidelines for , rp o ra tio n 1999 N-CHANNEL STANDARD GATE BUZ11 Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1 ) . , -8 in t e ik il BUZ11 Typical Performance Curves Unless Otherwise Specified Ta , CASE ... OCR Scan
datasheet

5 pages,
183.92 Kb

buz11 TA9771 BUZ11 BUZ11 abstract
datasheet frame
Abstract: BUZ11 ® N - CHANNEL 50V - 0.03 - 30A -TO-220 -TO-220 STripFETTM POWER MOSFET T YPE s s s s s V DSS R DS(o n) ID 50 V BUZ11 < 0.04 30 A TYPICAL RDS(on) = 0.03 AVALANCHE , silicon characterized in this datasheet. August 1998 1/6 BUZ11 THERMAL DATA R t hj-ca se R t , D = 18 A V GS = 10 V Min. Typ . 40 200 220 110 Max. Un it ns ns ns ns BUZ11 , BUZ11 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3 ... Original
datasheet

6 pages,
46.93 Kb

datecode G1 BUZ11 in electronic pulse schematic buz11 equivalent BUZ11 -TO-220 BUZ11 abstract
datasheet frame
Abstract: SIEMENS SI PMOS® Power Transistors · N channel · Enhancement mode · Avalanche-rated O BUZ 11 BUZ 11 A, BUZ 11 S2 VPT05381 VPT05381 Type BUZ 11 BUZ 11 A BUZ 11 S2 VD S 50 V 50 V 60 V Id 30 A 26 A 30 A Tc 29 "C 25 "C 29 C ^DS (on) 0.040 Q . 0.055 £2 0.040 S 2 Package 1 > TO-220 AB TO-220 AB TO-220 AB Ordering Code C67078-S1301-A2 C67078-S1301-A2 C67078-S1301 C67078-S1301 -A3 C67078-S1301-A5 C67078-S1301-A5 Maximum Ratings Parameter Symbol 11 Continuous drain current Pulsed drain current, Tc = 25 `C Avalanche current ... OCR Scan
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10 pages,
205.99 Kb

BUZ p channel buz 11 a 11S2 datasheet abstract
datasheet frame
Abstract: SIEMENS SIPMOS® Power MOS Transistors BUZ 11 BUZ 11A BUZ 11S2 = 50 . . 60 V ^DS = 26 . . 30 A h " D S fo n i = 0.04 . . 0.055 Q Rn · · · · N channel Enhancement mode Avalanche-proof Package: T Q -2 2 0 A B 1 ) Ordering code C67078-A1301-A2 C67078-A1301-A2 C67078-S1301-A3 C67078-S1301-A3 C67078-S1301-A5 C67078-S1301-A5 Type BUZ 11 BUZ 11 A BUZ 11 S2 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current, Tc = 29/25/29 °C Pulsed drain current, Tc = 25 °C Avalanche current, limited by r imax Aval ... OCR Scan
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12 pages,
261.32 Kb

-11-S-2 11S2 C67078-A1301-A2 C67078-S1301-A3 C67078-S1301-A5 C67078-A1301-A2 abstract
datasheet frame
Abstract: SIEMENS SIPMOS® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated BUZ 11 AL Type VDS /D •^DS (on) Package Ordering Code BUZ 11 AL 50 V 26 A 0.055 Q TO-220 AB C67078-S1330-A3 C67078-S1330-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current, Tc = 25 °C Id 26 A Pulsed drain current, Tc = 25 °C ^d puis 104 Avalanche current, limited by Tjmax IE Kf 26 Avalanche energy, periodic limited by Tj(max) Ear 1.9 mJ Avalanche energy, single pulse ID = 26 A, VDD = 25 V, RGS ... OCR Scan
datasheet

7 pages,
326.4 Kb

transistor buz 90 transistor buz 11 C67078-S1330-A3 BUZ 140 L al p80 transistor transistor buz 36 transistor buz 10 transistor buz 19 datasheet abstract
datasheet frame
Abstract: SIEMENS SIPMOS ® Power Transistor BUZ 11 Not for new design · N channel · Enhancement mode · Avalanche-rated Type BUZ 11 Vbs 50 V h 30 A ^% >S{on) 0.04 Si Package TO-220 AB Ordering Code C67078-S1301-A2 C67078-S1301-A2 Maximum Ratings Parameter Continuous drain current Tc = 29 °C Pulsed drain current Tc = 25 °C Avalanche current,limited by 7]max Avalanche energy,periodic limited by 7]max Avalanche energy, single pulse /d = 30 A, Vqd = 25 V, Rq$ = 25 i l L = 15.6 pH, 7j = 25 °C Gate ... OCR Scan
datasheet

9 pages,
143.67 Kb

transistor Buz 11 datasheet abstract
datasheet frame
Abstract: SIEMENS SIPMOS ® Power Transistor · N channel · Enhancement mode · Avalanche-rated · Logic Level BUZ 11 AL N ot for new design Type BUZ 11 AL V 'ds 50 V k> 26 A AbS(on) 0.055 n Package TO-220 AB Ordering Code C67078-S1330-A3 C67078-S1330-A3 Maximum Ratings Parameter Continuous drain current Tc = 25 °C Pulsed drain current Tc = 25 °C Avalanche current,limited by 7jmax Avalanche energy,periodic limited by 7]max Avalanche energy, single pulse ¡0 = 30 A, 1/DD = 25 V, Rq S = 25 ft L = 15.6 ... OCR Scan
datasheet

9 pages,
150.27 Kb

transistor buz 11 datasheet abstract
datasheet frame
Abstract: SIEMENS SIPMOS ® Power Transistor BUZ 11 A Not for new design · N channel · Enhancement mode · Avalanche-rated Type BUZ 11 A Vqs 50 V b 26 A ^bs{on) 0.055 fì Package TO-220 AB Ordering Code C67078-S1301 C67078-S1301 -A3 Maximum Ratings Parameter Continuous drain current Tc = 25 °C Pulsed drain current Tc = 25 °C Avalanche current,limited by 7jmax Avalanche energy .periodic limited by 7jmax Avalanche energy, single pulse fa = fa puls Symbol b Values 26 104 Unit A /ar ... OCR Scan
datasheet

9 pages,
151.09 Kb

transistor Buz 11 datasheet abstract
datasheet frame
Abstract: 3DE D T^S^a? 0D30116 0D30116 4 SGS-THOMSON S 6 S-THOMSON BUZ11 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 170x170 mils METALLIZATION: Top Al Back Au/Cr/Ni/Au BACKSIDE THICKNESS: 6100 À DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE: Source 47 x 51 mils Gate 15x18 mils RECOMMENDED WIRE BONDING: Sóurce Al - max 20 mils Gate Al - max 5 mils , June 1988 1/2 639 BUZ11 CHIP 30E D m 1^21237 QOBOll6) bJB_ Tfi S-THOMSON GUARANTEED PROBED ... OCR Scan
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2 pages,
41.85 Kb

BUZ11 datasheet abstract
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TO-220 STRIPFET POWER MOSFET BUZ11 Document Format Size Document Number 8 Raw Text Format BUZ11 N - CHANNEL 50V - 0.03 W - 33A DSS R DS(on) I D BUZ11 50 V < 0.04 W 33 A 1/8 THERMAL DATA R thj-case Thermal 220 110 ns ns ns ns BUZ11 2/8 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE s, duty cycle 1.5 % Safe Operating Area Thermal Impedance BUZ11 3/8 Output Characteristics
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STMicroelectronics 20/10/2000 8.63 Kb HTM 2947.htm
0.03 OHM - 30A TO-220 STRIPFET POWER MOSFET BUZ11 Document Format BUZ11 N - CHANNEL 50V - 0.03 W - 33A TO-220 STripFET ] MOSFET n TYPICAL R DS(on) = K identifies silicon characterized in this datasheet. TYPE V DSS R DS(on) I D BUZ11 50 = 50 W V GS = 10 V 40 200 220 110 ns ns ns ns BUZ11 2/8 ELECTRICAL 1.5 % Safe Operating Area Thermal Impedance BUZ11 3/8 Output Characteristics
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STMicroelectronics 25/05/2000 8.16 Kb HTM 2947-v3.htm
BUZ11 N-CHANNEL 50V - 0.03 OHM - 30A - TO-220 STRIPFET POWER MOSFET Document Number formats: Portable Document Format and Raw Text Format BUZ11 N - CHANNEL 50V - 0.03 W - 30A datasheet. TYPE V DSS R DS(on) I D BUZ11 50 V < 0.04 W 30 A 1 2 3 TO-220 1/6 THERMAL DATA R thj-case W V GS = 10 V 40 200 220 110 ns ns ns ns BUZ11 2/6 ELECTRICAL CHARACTERISTICS (continued) SOURCE 150 o C 75 0.24 ns m C ( * ) Pulsed: Pulse duration = 300 m s, duty cycle 1.5 % BUZ11 3/6 Fig. 1
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STMicroelectronics 02/04/1999 6.04 Kb HTM 2947-v1.htm
BUZ11 N-CHANNEL 50V - 0.03 OHM - 30A - TO-220 STRIPFET POWER MOSFET Document Number formats: Portable Document Format and Raw Text Format BUZ11 N - CHANNEL 50V - 0.03 W - 30A datasheet. TYPE V DSS R DS(on) I D BUZ11 50 V < 0.04 W 30 A 1 2 3 TO-220 1/6 THERMAL DATA R thj-case W V GS = 10 V 40 200 220 110 ns ns ns ns BUZ11 2/6 ELECTRICAL CHARACTERISTICS (continued) SOURCE 150 o C 75 0.24 ns m C ( * ) Pulsed: Pulse duration = 300 m s, duty cycle 1.5 % BUZ11 3/6 Fig. 1
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STMicroelectronics 14/06/1999 6 Kb HTM 2947-v2.htm
1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS Ask for document number FN2253 FN2253 FN2253 FN2253 BUZ11 30.0A, 50V, 0.040 ohm, N-Channel Power MOSFET (1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS) For products not on the web, U.S. and Canada callers dial 1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS (1-800-442-7747) ext. 700, International callers dial 407-727-9207. Here's where you can find out how to get your free copy of Adobe's acrobat reader . All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 ISO9000 ISO9000 ISO9000 quality systems certification.
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Harris 15/08/1997 2.16 Kb HTM index.htm
1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS Ask for document number FN2253 FN2253 FN2253 FN2253 BUZ11 30.0A, 50V, 0.040 ohm, N-Channel Power MOSFET (1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS) For products not on the web, U.S. and Canada callers dial 1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS (1-800-442-7747), International callers dial 407-727-9207. Here's where you can find out how to get your free copy of Adobe's acrobat reader . All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 ISO9000 ISO9000 ISO9000 quality systems certification.
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Harris 29/04/1998 2.14 Kb HTM index-v1.htm
30 0.02 STD20NE03LT4 STD20NE03LT4 STD20NE03LT4 STD20NE03LT4 DPAK STD20N03LT4 STD20N03LT4 STD20N03LT4 STD20N03LT4 50 0.04 BUZ11 TO-220 BUZ11 50 0.055 BUZ11A TO-220 BUZ11A 50 0.07 BUZ10 BUZ10 BUZ10 BUZ10 TO-220
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STMicroelectronics 20/10/2000 11.89 Kb HTM lowmosfe.htm
30 0.02 STD20NE03LT4 STD20NE03LT4 STD20NE03LT4 STD20NE03LT4 DPAK STD20N03LT4 STD20N03LT4 STD20N03LT4 STD20N03LT4 50 0.04 BUZ11 TO-220 BUZ11 50 0.055 BUZ11A TO-220 BUZ11A 50 0.07 BUZ10 BUZ10 BUZ10 BUZ10 TO-220
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STMicroelectronics 04/01/2001 11.87 Kb HTM lowmosfe-v1.htm
BUZ11 BUZ11FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Document Number: 2947 Date Update: 27/11/96 Pages: 8 The document is available in the following formats: Portable Document Format and Raw Text Format (for text retrieval only) The document is also available compressed with PKZIP® in the following formats: Portable Document Format , PrinterLeaf and PostScript
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STMicroelectronics 28/11/1996 1.44 Kb HTM 2947-v5.htm
BUZ11 N-CHANNEL 50V - 0.03 OHM - 30A - TO-220 STRIPFET POWER MOSFET Document Number: 2947 Date Update: 12/08/98 Pages: 6 The document is available in the following formats: Portable Document Format and Raw Text Format
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STMicroelectronics 14/06/1999 0.89 Kb HTM 2947-v5-vx2.htm

Shortform Datasheet Search Results

Part Manufacturer Description Shortform Datasheet Ordering
BUZ11ACHIP ST Microelectronics N-Channel Enhancement MOSFET

Shortform Datasheet

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BUZ11CHIP ST Microelectronics N-Channel Enhancement MOSFET

Shortform Datasheet

Buy
BUZ11CHP Vishay Siliconix N-Channel Enhancement MOSFET - See Data Sheet BUZ11

Shortform Datasheet

Buy
BUZ11S2FI ST Microelectronics N-Channel Enhancement MOSFET

Shortform Datasheet

Buy

Fairchild Cross Reference Results

Fairchild Part Orderable Industry Part Manufacturer Type Family Description
FDB035AN06A0 FDB035AN06A0 Buy BUZ111SE3045 Buy Infineon (Siemens) Close Power MOSFET Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 0.0035 Ohms @ VGS = 10V, TO-263/D2PAK Package
FDB035AN06A0 FDB035AN06A0 Buy BUZ111SE3045A Buy Infineon (Siemens) Close Power MOSFET Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 0.0035 Ohms @ VGS = 10V, TO-263/D2PAK Package
FDB050AN06A0 FDB050AN06A0 Buy BUZ110S Buy Infineon (Siemens) Close Power MOSFET Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-263AB
FDB050AN06A0 FDB050AN06A0 Buy BUZ110SL Buy Infineon (Siemens) Close Power MOSFET Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-263AB
FDB050AN06A0 FDB050AN06A0 Buy BUZ111SL Buy Infineon (Siemens) Close Power MOSFET Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-263AB
FDB060AN08A0 FDB060AN08A0 Buy BUZ110SE3045 Buy Infineon (Siemens) Close Power MOSFET Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-263/D2PAK Package
FDB060AN08A0 FDB060AN08A0 Buy BUZ110SE3045A Buy Infineon (Siemens) Close Power MOSFET Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-263/D2PAK Package
FDB060AN08A0 FDB060AN08A0 Buy BUZ110SLE3045 Buy Infineon (Siemens) Close Power MOSFET Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-263/D2PAK Package
FDB060AN08A0 FDB060AN08A0 Buy BUZ110SLE3045A Buy Infineon (Siemens) Close Power MOSFET Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-263/D2PAK Package
FDB060AN08A0 FDB060AN08A0 Buy BUZ111SE3045 Buy Infineon (Siemens) Close Power MOSFET Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-263/D2PAK Package

NTE Electronics Cross Reference Results

NTE Electronics Part Industry Part
NTE2389 Buy BUZ11 Buy
NTE2389 Buy BUZ11A Buy
NTE2389 Buy BUZ11F1 Buy
NTE2389 Buy BUZ11S2 Buy
NTE2389 Buy BUZ11S2F1 Buy

NXP / Philips Cross Reference Results

NXP Semiconductor / Philips Part Industry Part Manufacturer Type Comments
BUK7535-55A Buy BUZ11 Buy

On Semiconductor Cross Reference Results

On Semiconductor Part Industry Part Manufacturer Type
NTB5405NT4G Buy BUZ111SE3045 Buy Infineon Technologies Close
NTB5405NT4G Buy BUZ111SE3045A Buy Infineon Technologies Close
NTP6413ANG Buy BUZ11-R4941 Buy Fairchild Semiconductor Close
NTP6413ANG Buy BUZ11S2 Buy American Microsemiconductor Close

STMicroelectronics Cross Reference Results

STMicroelectronics Part Industry Part Manufacturer Type Description
STP16NE06L Buy BUZ110SL Buy Infineon Technologies Replacement N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET - POWER MOSFETs
STP30NE06 Buy BUZ11A Buy - Replacement Power MOSFETs
STP30NE06L Buy BUZ11AL Buy - Replacement Power MOSFETs
STP36NE06 Buy BUZ11 Buy - Replacement Power MOSFETs
STP36NE06 Buy BUZ11FI Buy - Replacement Power MOSFETs
STP36NE06 Buy BUZ11S2 Buy - Replacement Power MOSFETs
STP80NE06-10 Buy BUZ110S Buy Infineon Technologies Replacement Power MOSFETs - Low Voltage
STP80NF55-06 Buy BUZ111S Buy Infineon Technologies Replacement Power MOSFETs - Low Voltage

Misc. Cross Reference Results

Part Similar Part Notes
BUZ11 Buy BUK456-100 Buy
BUZ11 Buy BUZ12 Buy
BUZ11 Buy IRFZ42 Buy
BUZ11 Buy STP20NF06L Buy
BUZ11 Buy STP36NF06 Buy
BUZ110S Buy IRF1010E Buy
BUZ110SL Buy IRL3705N Buy
BUZ11A Buy BUK455-50B Buy
BUZ11A Buy BUK456-100 Buy
BUZ11A Buy BUZ12 Buy