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Part : BUZ102SL Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 123,056 Best Price : $0.53 Price Each : $0.53
Part : BUZ102SL-E3045A Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 73,903 Best Price : $0.53 Price Each : $0.53
Part : BUZ102SLE3045A Supplier : Siemens Manufacturer : ComSIT Stock : 1,000 Best Price : - Price Each : -
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BUZ102S Datasheet

Part Manufacturer Description PDF Type
BUZ102S Infineon Technologies SIPMOS Power Transistor Original
BUZ102S Siemens Original
BUZ102S Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) Original
BUZ102S Toshiba Power MOSFETs Cross Reference Guide Original
BUZ102S-4 Infineon Technologies SIPMOS Power Transistor Original
BUZ102S-4 Siemens SIPMOS Power Transistor Scan
BUZ102S-E3045 Infineon Technologies SIPMOS Power Transistor Original
BUZ102SE3045 Infineon Technologies TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,52A I(D),TO-263AB Scan
BUZ102SE3045A Infineon Technologies N-Channel SIPMOS Power Transistor Original
BUZ102S-E3045A Infineon Technologies SIPMOS Power Transistor Original
BUZ102SL Infineon Technologies SIPMOS Power Transistor Original
BUZ102SL Siemens Original
BUZ102SL Siemens SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) Original
BUZ102SL Toshiba Power MOSFETs Cross Reference Guide Original
BUZ102SL Infineon Technologies N-Channel Transistor Scan
BUZ102SL-4 Infineon Technologies SIPMOS Power Transistor Original
BUZ102SL-4 Siemens SIPMOS Power Transistor Scan
BUZ102SL-E3045 Infineon Technologies SIPMOS Power Transistor Original
BUZ102SLE3045 Infineon Technologies N-Channel Transistor Scan
BUZ102SLE3045A Infineon Technologies N-Channel SIPMOS Power Transistor Original
Showing first 20 results.

BUZ102S

Catalog Datasheet MFG & Type PDF Document Tags

buz102s

Abstract: 9070C operating temperature Type Package Ordering Code Packaging BUZ102S P-TO220 , BUZ102S E3045 Pin 2 Tube BUZ102S E3045A Pin 1 Tube Maximum Ratings, at Tj = 25 °C unless , ) parameter: VGS 10 V BUZ102S BUZ102S 2.8 60 W A 2.4 50 2.2 45 40 1.8 ID , ) ZthJC = f (tp ) parameter : D = 0 , T C = 25 °C parameter : D = tp /T 10 3 BUZ102S 10 1 BUZ102S K/W A 10 0 tp = 19.0µs DS ID /I D Z thJC 10 2 10 -1 = V
Infineon Technologies
Original
Q67040-S4011-A2 9070C FID60 102S P-TO220-3-1 P-TO263-3-2 Q67040-S4011-A6 Q67040-S4011-A5

smd transistor 43t

Abstract: marking code ya SMD Transistor Infineon technolog i«s lmProved fW* ' BUZ102S SIPMOS® Power Transistor Features â'¢ N channel â , A Type Package Ordering Code Packaging BUZ102S P-T0220-3-1 Q67040-S4011-A2 Tube BUZ102S E3045A P-T0263-3-2 Q67040-S4011-A6 Tape and Reel BUZ102S E3045 P-T0263-3-2 Q67040-S4011-A5 Tube Pin 1 Pin 2 Pin 3 , ¡133BÃà aas 06.99 Infineon technolog i«s BUZ102S Typ. output characteristics parameter: ip = 80 ps 8uz102s , ) parameter: /q pu|S = 52 A BUZ102S 16 V | 10 / t y r / / J
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OCR Scan
G1333 smd transistor 43t marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor 43t SMD P-T0262-3-1/ G13B77 P-T0263-3-2/D2PAK GPT09085 SQT-23

smd transistor 43t

Abstract: buz1025 Infineon technolog i«s lmProved fW* ' BUZ102S SIPMOS® Power Transistor Features â'¢ N , 2 Continuous drain current b 52 A Type Package Ordering Code Packaging BUZ102S P-T0220-3-1 Q67040-S4011-A2 Tube BUZ102S E3045A P-T0263-3-2 Q67040-S4011-A6 Tape and Reel BUZ102S E3045 P-T0263 , Copyrighted By It| 666 06.99 sAilSSWl&tifli333flfl OAS Infineon technologies BUZ102S Typ. output , / / / / / / / Typ. gate charge "gS='(Osato) parameter: /q pu|S = 52 A BUZ102S 16 V | 10
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OCR Scan
buz1025 SMD DIODE BOOK st smd diode marking code BUZ smd marking wds infineon 3330 BUZ 1025 P-S9X23-3-1 SQT-89

IRFZ44N complementary

Abstract: IRF3205 COMPLEMENTARY 55V UltraFET MOSFETs Competitive Cross Reference PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRF1010NS IRF3205 IRF3205L IRF3205S IRFZ24A IRFZ24N IRFZ34N IRFZ34NS IRFZ44A IRFZ44N IRFZ44NS IRFZ48N IRFZ48NS MTB52N06V TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-263 TO-220 TO-262 TO-263 TO
Harris Semiconductor
Original
HRF3205 HUF75329P3 NBP6060 LC-98045 IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application IRF3205 TO-220 philips 435-2 HUF75337P3 HUF75321P3 HUF75309P3 HUF75339P3

TLE5205 cross

Abstract: tle6205 =10A I=12A Rthja=30K/W BUZ101S(L), SPD21N05L BUZ102S(L), BUZ111S(L) Rthja=10K/W BUZ104S(L
Infineon Technologies
Original
TLE6209 TLE5205 cross tle6205 c167 ecu ECU PWM Throttle Position Sensor C515C

BUZ90af

Abstract: hv82 , BUZ101SL BUZ102S BUZ11 BUZ11A BUZ171 BUZ173 BUZ22 BUZ271 BUZ323 BUZ325 BUZ332A BUZ334 BUZ350
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Original
BUZ90af hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 BF1005 BLF244/B BSP149 BSP17 SO-20

IRF540 complementary

Abstract: IRFZ44N complementary BUZ104 BUZ111S BUZ111SL BUZ110S BUZ100S BUZ110SL BUZ100SL BUZ102S BUZ102SL BUZ103S BUZ103SL
STMicroelectronics
Original
STP3N60FI IRF540 complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L

2N5101

Abstract: BUY46 : 2N5804 STI Type: BUZ102S Notes: Breakdown Voltage: 55 Continuous Current: 70 RDS(on) Ohm: Trans , : Resistance Switching toff: Resistance Switching ID: Case Style: TO-220 Polarity: Industry Type: BUZ102S STI Type: BUZ102SL Notes: Breakdown Voltage: 55 Continuous Current: 47 RDS(on) Ohm: Trans , : Resistance Switching toff: Resistance Switching ID: Case Style: TO-220 Polarity: Industry Type: BUZ102SL
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Original
BUZ342 2N5101 BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent 2N5050 2N5052 2N5055 2N5056 2N5057 2N5058

YTA630

Abstract: MTW14P20 BUZ101 BUZ101L BUZ101S BUZ101SL BUZ102 BUZ102AL BUZ102S BUZ102SL BUZ103 BUZ103AL BUZ103S
Toshiba
Original
YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401

SSH6N80

Abstract: rfp60n06 BUZ102AL BUZ102SL BUZ103 BUZ103S BUZ103SL BUZ104 BUZ104S BUZ104SL BUZ11 BUZ110S BUZ110SL BUZ111S
STMicroelectronics
Original
2SK2717 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A STMicroelectronics BUZ10 BUZ71 BUZ71A BUZ72A BUZ80A IRF520

fqp60n06

Abstract: SSH6N80 N IRF620 (S IEM EN S) BUZ100 BUZ101 BUZ102 BUZ102AL BUZ102SL BUZ103 BUZ103S
STMicroelectronics
Original
fqp60n06 spb32N03l SMP60N03-10L SSP80N06A IRF540 application fsd9933a STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L

DIODE BUZ smd

Abstract: Q67040-S4010-A5 Type Package Ordering Code Packaging BUZ102SL Pin 3 G D S P-TO263-3-2 Q67040-S4010-A6 Tape and Reel BUZ102SL E3045 Pin 2 P-TO220-3-1 Q67040-S4010-A2 Tube BUZ102SL E3045A , Ptot = f (TC) ID = f (TC ) parameter: VGS 10 V BUZ102SL BUZ102SL 130 55 W A , BUZ102SL 10 1 BUZ102SL K/W A 10 0 tp = 21.0µs Z thJC /I D ID 10 2 10 -1 , . drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS BUZ102SL
Infineon Technologies
Original
102SL Q67040-S4010-A5 DIODE BUZ smd s4010

Dual N- AND P-Channel Power FET TO-220 PACKAGE

Abstract: buz102 . q VDSmin ID RDS(on) Ptot TJmax RthJC EAS Ciss Ach S-FET (BUZ102SL) 50 V 42 A
Siemens
Original
Dual N- AND P-Channel Power FET TO-220 PACKAGE p-channel fet to-220 BSP 220 equivalent 100S 101S 103S T0-220 P-DSO-28

SMD DIODE gg 45

Abstract: TO-92 44E BUZ102SL_ P-TQ220-3-1 Q67040-S4010-A2 Tube_ BUZ102SL E3045A P-TQ263-3-2 Q67040-S4010-A6 Tape and Reel BUZ102SL E3045 P-T0263-3-2 Q67040-S4010-A5 Tube Maximum Ratings, at T\ = 25 'C unless otherwise specified , . Data Book 0235bD5 0133313 44E Hi 671 06.99 Infineon t«ch nolog i»s BUZ102SL Electrical , BUZ 102SL Typ. output characteristics lD=f(VD s) parameter: fp = 80 (js BUZ102SL = 120W Typ , 4.0 V 5.0 - VGS Typ. drain-source-on-resistance fîDS(on) = f Cd) parameter: l/gg BUZ102SL 0
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OCR Scan
SMD DIODE gg 45 TO-92 44E marking t54 diode smd marking BUZ 01333T2 X23-3-1 D133777

fqp60n06

Abstract: spb32N03l N IRF620 (S IEM EN S) BUZ100 BUZ101 BUZ102 BUZ102AL BUZ102SL BUZ103 BUZ103S
STMicroelectronics
Original
FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 HGTG*N60A4D irf630 irf640 YTAF630 STP80NE03L-06 STS4DPF30L STB70NF03L STB55NF03L STW18NB40 STS8NFS30L

SPP52N05

Abstract: buz102s Infineon technolog i«s lmProved fW* ' BUZ102S SIPMOS® Power Transistor Features â'¢ N , 2 Continuous drain current b 52 A Type Package Ordering Code Packaging BUZ102S P-T0220-3-1 Q67040-S4011-A2 Tube BUZ102S E3045A P-T0263-3-2 Q67040-S4011-A6 Tape and Reel BUZ102S E3045 P-T0263 , Copyrighted By It| 666 06.99 sAilSSWl&tifli333flfl OAS Infineon technologies BUZ102S Typ. output , / / / / / / / Typ. gate charge "gS='(Osato) parameter: /q pu|S = 52 A BUZ102S 16 V | 10
Siemens
Original
SPP52N05 Siemens DIODE E 1220

Q67040-S4011-A2

Abstract: SPP52N05 55V UltraFET MOSFETs Competitive Cross Reference PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRF1010NS IRF3205 IRF3205L IRF3205S IRFZ24A IRFZ24N IRFZ34N IRFZ34NS IRFZ44A IRFZ44N IRFZ44NS IRFZ48N IRFZ48NS MTB52N06V TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-263 TO-220 TO-262 TO-263 TO
Siemens
Original

BUZ MOSFET

Abstract: mosfet BUZ 326 =10A I=12A Rthja=30K/W BUZ101S(L), SPD21N05L BUZ102S(L), BUZ111S(L) Rthja=10K/W BUZ104S(L
Siemens
Original
BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615NV PL-03-821 B152-H6493-G5-X-7600

buz 342 G

Abstract: DIODE BUZ BUZ104 BUZ111S BUZ111SL BUZ110S BUZ100S BUZ110SL BUZ100SL BUZ102S BUZ102SL BUZ103S BUZ103SL
Siemens
Original
346S2 buz 342 G DIODE BUZ z347 diode z104 z349 z332a 102AL 103AL

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ101 BUZ101L BUZ101S BUZ101SL BUZ102 BUZ102AL BUZ102S BUZ102SL BUZ103 BUZ103AL BUZ103S
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OCR Scan
BUZ MOSFET 334 spd14n05 mosfet BUZ 349 BUZ 100 MOSFET mosfet buz 90a km 8560 BSP318S