500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : BUZ100S Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 6,388 Best Price : $0.56 Price Each : $0.69
Part : BUZ100S-E3045A Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 34,000 Best Price : $0.56 Price Each : $0.69
Part : BUZ100S E3045A Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 2,840 Best Price : $0.4388 Price Each : $1.6875
Part : BUZ100E3044 Supplier : Siemens Manufacturer : ComSIT Stock : 6,545 Best Price : - Price Each : -
Part : BUZ100SE3045A Supplier : Infineon Technologies Manufacturer : ComSIT Stock : 1,000 Best Price : - Price Each : -
Shipping cost not included. Currency conversions are estimated. 

BUZ100 Datasheet

Part Manufacturer Description PDF Type
BUZ100 Siemens Original
BUZ100 Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) Original
BUZ100 Toshiba Power MOSFETs Cross Reference Guide Original
BUZ100 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BUZ100E3045A Infineon Technologies N-Channel SIPMOS Power Transistor Original
BUZ100E3046 Infineon Technologies N-Channel SIPMOS Power Transistor Original
BUZ100E3227 Infineon Technologies N-Channel SIPMOS Power Transistor Original
BUZ100E3249 Infineon Technologies N-Channel SIPMOS Power Transistor Original
BUZ100E3250 Infineon Technologies N-Channel SIPMOS Power Transistor Original
BUZ100E3251A Infineon Technologies N-Channel SIPMOS Power Transistor Original
BUZ100E3257 Infineon Technologies N-Channel SIPMOS Power Transistor Original
BUZ100E3258 Infineon Technologies N-Channel SIPMOS Power Transistor Original
BUZ100E3260 Infineon Technologies N-Channel SIPMOS Power Transistor Original
BUZ100L Siemens Original
BUZ100L Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) Original
BUZ100L Toshiba Power MOSFETs Cross Reference Guide Original
BUZ100LE3045A Infineon Technologies N-Channel SIPMOS Power Transistor Original
BUZ100S Infineon Technologies SIPMOS Power Transistor Original
BUZ100S Siemens Original
BUZ100S Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) Original
Showing first 20 results.

BUZ100

Catalog Datasheet MFG & Type PDF Document Tags

buz90af

Abstract: P7NB60FP 2SK246 50 0,0012 - - T092 2SK30A 50 0,0065 - - T092 2SK389 50 0,0025 - - SIP7 BUZ100 50 60 0,018 250
-
OCR Scan
2SK192 2SK125 2SK163 BUZ350 2SK1377-TOS 2SK1117 buz90af P7NB60FP P4NB80FP P6N60 P5NB60FP buz91a 2SK212 2SK241 BF960 BF961 BF964

SmD TRANSISTOR 42T

Abstract: SIEMENS BUZ 100 SIPMOS ® Power Transistor â'¢ N channel â'¢ Enhancement mode â'¢ Avalanche-rated â'¢ dv/df rated â'¢ Ultra low on-resistance â'¢ 175°C operating temperature â'¢ also in TO-220 SMD available Type Vbs > D ffDS(on) Package Ordering Code BUZ100 50 V 60 A 0.018 a TO-220 AB C67078-S1348-A2 Maximum Ratings Values Symbol Parameter Continuous drain current Unit A b 60 7c = 101 °C Pulsed drain current fopuls 240 7c = 25 °C
-
OCR Scan
SmD TRANSISTOR 42T

BUZ100

Abstract: BUZ100 SIEMENS SIEMENS SIPMOS ® Power Transistor · N channel · Enhancement mode · Avalanche-rated · d tfd f rated · Ultra low on-resistance · 175°C operating temperature · also in TO-220 SMD available BUZ 100 Type BUZ100 Vbs 50 V b 60 A f%>S(on) 0.018 Q Package TO-220 AB Ordering Code C67078-S1348-A2 Maximum Ratings Parameter Continuous drain current 7C = 101 °C Pulsed drain current Tc = 25 °C Avalanche energy, single pulse /D = 60 A, VDD = 25 V, Rqs = 25 £1 L = 70 pH, 7] = 25 °C Reverse diode dv/dt
-
OCR Scan
BUZ100 SIEMENS to 220 smd

std2n52

Abstract: stp2na60 -100A BUK582-60A BUZ10 BUZ100 BUZ101 BUZ102 BUZ103 BUZ104 SGS-THOMSON replacement SGS-THOMSON
STMicroelectronics
Original
STU16NB50I YTA630 STP19NB20 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 BUZ91 equivalent 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154

SSH6N80

Abstract: IRF640 equivalent -100B BUK555-60A BUK555-60B BUK556-60A BUK556-60H BUK582-100A BUK582-60A BUZ10 BUZ100 BUZ10L BUZ10S2
STMicroelectronics
Original
YTAF630 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent buz10 equivalent BUK444 equivalent 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160

fqp60n06

Abstract: SSH6N80 N IRF620 (S IEM EN S) BUZ100 BUZ101 BUZ102 BUZ102AL BUZ102SL BUZ103 BUZ103S
STMicroelectronics
Original
fqp60n06 spb32N03l SMP60N03-10L SSP80N06A IRF540 application fsd9933a STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L

SSH6N80

Abstract: rfp60n06 STP19NB20 STP19NB20 STP45NE06 STP45NE06 STP55NE06 STP4NB80 STP11NB40 BUZ100 BUZ101 BUZ102
STMicroelectronics
Original
2SK2717 IRF3205 IR BUK417-500AE SFP70N03 STMicroelectronics BUZ22 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A

fqp60n06

Abstract: spb32N03l N IRF620 (S IEM EN S) BUZ100 BUZ101 BUZ102 BUZ102AL BUZ102SL BUZ103 BUZ103S
STMicroelectronics
Original
FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 HGTG*N60A4D irf630 irf640 2SK791 STP80NE03L-06 STS4DPF30L STB70NF03L STB55NF03L STW18NB40 STS8NFS30L

2N5101

Abstract: BUY46 : TO-220 Polarity: Industry Type: BUZ100 STI Type: BUZ100L Notes: Breakdown Voltage: 50 , : Case Style: TO-220 Polarity: Industry Type: BUZ100L STI Type: BUZ100S Notes: Breakdown Voltage: 55 , : Case Style: TO-220 Polarity: Industry Type: BUZ100S STI Type: BUZ100SL Notes: Breakdown Voltage , : Case Style: TO-78 Industry Type: 2N5796 STI Type: BUZ100 Notes: Breakdown Voltage: 50 Continuous , Switching ID: Case Style: TO-220 Polarity: Industry Type: BUZ100SL STI Type: BUZ101 Notes: Breakdown
-
Original
BUZ342 2N5101 BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent 2N5050 2N5052 2N5055 2N5056 2N5057 2N5058

IRF540 complementary

Abstract: IRFZ44N complementary SSP2N90A SSP2N90A BUZ342 BUZ100 BUZ100L BUZ102 BUZ102AL BUZ103 BUZ103AL BUZ101 BUZ101L BUZ104AL BUZ104 BUZ111S BUZ111SL BUZ110S BUZ100S BUZ110SL BUZ100SL BUZ102S BUZ102SL BUZ103S BUZ103SL
STMicroelectronics
Original
STP3N60FI IRF540 complementary IRFZ44N complementary TOSHIBA IRFZ44A datasheet IRF630 complementary equivalent 2sk2837 mosfet stp4nb60fp RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor -55 BUK9630-55 BUK9670-55 BUK98150-55 BUK9840-55 BUK9880-55 BUZ10 BUZ100 BUZ100L BUZ100S BUZ100SL
-
Original
TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 2N109 2N1304 2N1305 2N1307 2N1613 2N1711

YTA630

Abstract: MTW14P20 Time [usec] 14 16 18 Measured and simulated short circuit behavior for a BUZ100SL transistor , BUZ100SL 55V transistor in a low impedance short circuit test fixture. Note the close tracking of drain
Toshiba
Original
MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401

Q2N4401

Abstract: D1N3940 BUZ100L BUZ 101 BUZ 101L BUZ 102 BUZ 102AL BUZ 103 Q 0.10 0.10 0.20 0.25 0.25 0.20 0.40 0.60 0.60 0.40
-
Original
Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 RD91EB

k2645

Abstract: k4005 Code Packaging BUZ100S P-T0220-3-1 Q67040-S4001-A2 Tube BUZ100S E3045A P-T0263-3-2 Q67040-S4001-A6 Tape and Reel BUZ100S E3045 P-T0263-3-2 Q67040-S4001-A5 Tube Maximum Ratings, at 7] = 25 'C, unless , Ã235LDS 0133351a 575 06.99 Infineon ticknoiogi«* BUZ100S Typ. output characteristics h = f{vDS) parameter: tp = 80 |js BUZ100S Typ. transfer characteristics /q= f(VG5) parameter: tp = 80 jjs , BUZ100S Typ. forward transconductanice £ts = 7] = 25'C parameter: gfe 635 _ _06.99
-
Original
k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 MK135 MK136 MK137 MK138 MK139 MK140

D1N5226

Abstract: D1N4750 0.15 85 m 0.20 0.25 0.20 0.40 0.60 Typ Type BUZ100L BUZ102AL BUZ12AL BUZ BUZ BUZ BUZ BUZ BUZ BUZ
Infineon Technologies
Original
D1N5226 D1N4750 1N5226 pspice D1N5242 D1N5227 SCHEMATIC circuit scr H-Bridge PDSO-28 BTS770 BTS780

BUP 312

Abstract: BUP 303 IGBT â'¢ also in TO-220 SMD available Type Vbs BUZ100L 50 V 4j 60 A flbS(on , 20 V, i/DS = o V 682 &E35bQ5 a0fi4SE7 075 â  07.96 SIEMENS BUZ100L Electrical , ) parameter: D = tp / T < Ì5 â  fi23SbDS 00 04 5 3 0 bbT â  07.96 SIEMENS BUZ100L Typ , 71 â  07.96 SIEMENS BUZ100L Package Outlines TO-220 AB , Dimension in mm â'" 9.9
-
OCR Scan
BUP 312 BUP 303 IGBT DIODE BUZ 537 buz 91 f BUP 203 BUZ11S2 BUZ12A BUP313D BUP314D

transistor 8BB smd

Abstract: smd diode marking 3fs BUZ100L Type BUZ100L Vbs 50V b 60 A Boston) 0.018 fl Package TO-220 AB Ordering Code , fithJC fithJA Values BUZ100L Unit °C K/W -5 5 .+ 175 -55. + 175 , . BUZ100L Unit fe 60 A V ns MC Semiconductor Group 684 07.96 SIEMENS Power dissipation Pm = ttT c) Drain current lD = ttT c) parameter: \/GS > 5 V 6 5 - BUZ100L 2 6 0 , (on) = BUZ100L Gate threshold voltage ^GS (th) = f ( T) parameter: ^gs = ^ds- b = 1 mA 4.6 f
-
OCR Scan
transistor 8BB smd smd diode marking 3fs transistor marking smd 7c smd code book B3 transistor smd DIODE 3FS smd diode 77a P-T0262-3-1/ G13B77 P-T0263-3-2/D2PAK GPT09085 SQT-23 X23-3-1

leistungstransistoren

Abstract: bup314d SIEMENS BUZ 100 SIPMOS ® Power Transistor â'¢ N channel â'¢ Enhancement mode â'¢ Avalanche-rated â'¢ dv/df rated â'¢ Ultra low on-resistance â'¢ 175°C operating temperature â'¢ also in TO-220 SMD available Type Vbs > D ffDS(on) Package Ordering Code BUZ100 50 V 60 A 0.018 a TO-220 AB C67078-S1348-A2 Maximum Ratings Values Symbol Parameter Continuous drain current Unit A b 60 7c = 101 °C Pulsed drain current fopuls 240 7c = 25 °C
-
OCR Scan
leistungstransistoren buz 342 G BUP 307D siemens 230 95 O BUP400D BUZ382 346S2 103AL BUP410D
Abstract: 2SK246 50 0,0012 - - T092 2SK30A 50 0,0065 - - T092 2SK389 50 0,0025 - - SIP7 BUZ100 50 60 0,018 250 -
OCR Scan
C67078-S1354-A2
Showing first 20 results.