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HIP6601BCBZ-T Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
HIP6603BCBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
ISL6596IBZ Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6608CBZ Intersil Corporation Synchronous Rectified MOSFET Driver; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
ISL6609AIRZ Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6609IBZ Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy

BUZ MOSFET

Catalog Datasheet MFG & Type PDF Document Tags

BUZ MOSFET

Abstract: bDE D I 5133107 000D530 ST 1 â  S M L B SEMELAB PLC prpr M A G N A r^ t e c BUZ 9 0 0 BUZ 901 NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FO R USE AS COMPLEMENTARY , CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V &200V) HIGH ENERGY RATING , . ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ 9 00 BVds X BVqs S > D >D (PK , 160 ±14 8 8 125 -55°C to 150 150 1.0 BUZ 901 200 V V A A W °C °C °C/W
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BUZ MOSFET BUZ905 BUZ906 00DD531 BUZ900 BUZ901 BUZ900D
Abstract: r^ tec BUZ 9 0 0 D b u z s o id NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR , _ _ W W MAGNA TEC BUZ 9 0 0 D BUZ 9 0 1 D N - CHANNEL MOSFET Drain - Source , SEMELAB PLC BUZ 9 0 0 D BUZ 9 0 1 D N - CHANNEL MOSFET 10 100 V d s (V) DRAIN TO SOURCE , SPEED SWITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V &200V , MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ 900D BVdsx b v GSS Id (pk ) Ptot Tstg -
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Q000533 BUZ905D BUZ906D BUZ901D

BUZ MOSFET

Abstract: r r MAGNA TEC BUZ 905D BUZ 906D NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED , A TEC BUZ 905D BUZ 906D P - CHANNEL MOSFET DRAIN TO SOURCE VOLTAGE CASE TEMPERATURE Tc , SPEED SWITCHING P - CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V &200V , MAXIMUM RATINGS (TcaSe = 25°C unless otherwise stated) BUZ 905D b V dsx BVqss > D Id (pk ) Plot , -160 ±14 - 16 - 16 250 -55°C to 150 150 0.5 BUZ 906D -200 V V A A W °C °C °C
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G0GDS42 S1331S7 OOODS43
Abstract: AGNA TEC BUZ 905P BUZ 906P P - CHANNEL MOSFET LU cc cc 3 O g o -10 -100 V ,   - SEMELAB PLC SIILB ^ r -3 ° i-^ 3 prpr M AGNA r^ tec BUZ 905P BUZ 90BP NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SWITCHING P - CHANNEL POWER MOSFET SEMEFAB , (Tcase = 25°C unless otherwise stated) BUZ 905P BVdsx BVqs S > d > (pk) d Ptot Tstg Tj Rth -
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BUZ900P BUZ901P A1331B7
Abstract: M A Gl\IA TEC BUZ 9 0 5 b u z 90S NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED , SEMELAB PLC BUZ 9 0 5 BUZ 9 0 6 P - CHANNEL MOSFET 50 100 150 DRAIN TO SOURCE VOLTAGE , SPEED SWITCHING P - CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V &200V , choice for designers. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ 905 bvdsx , , Leicestershire. LE17 4JB England BUZ 906 -160 -200 ±14 -8 -8 125 -55°C to 150 150 1.0 V V -
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Abstract: BUZ 9 00 P NEW PRODUCT b u z s g ip SILICON IM-CHANNEL POWER MOSFET DESIGNED FOR USE AS , England i 160 ±14 8 8 125 -55°C to 150 150 1.0 BUZ 9G1P 200 V V A A W °C °C °C/W bOE D â  DDDDS37 â SHLB BUZ 900P BUZ 9 0 1 P N - CHANNEL MOSFET , '¢ â'¢ â'¢ HIGH SPEED SWITCHING N - CHANNEL POWER MOSFET SEM EFAB DESIGNED AND DIFFUSED HIGH , . ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BUZ 90QP bvqsx BVqs S â'¢d Id (pk -
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BUZ905P BUZ906P

BUZ MOSFET

Abstract: power MOSFET IRF data [ /PageMode /UseOutlines /DOCVIEW pdfmark Ordering Nomenclature Guide POWER MOSFET PRODUCTS BUZ TYPES BUZ XXX EQUIVALENT EUROPEAN PART NUMBER PART TYPE EITHER 2 OR 3 DIGITS HP, HRF , XX X XX XXX DEVICE TYPE RF: Standard MOSFET RL: Current Limited MOSFET PACKAGE , Logic Level MOSFET RFD15N05SM D-PAK,15A, N-Channel, 50V, Surface Mount Leadform MOSFET RFP12N06RLE TO-220, 12A N-Channel, 60V, Rugged, Logic Level, ESD Protected MOSFET NOTE: For RF1K, RF3S, RF3VXXXXX Series
Intersil
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MS-012AA RLP1N08LE power MOSFET IRF data P-CHANNEL 25A TO-247 POWER MOSFET rfd15n05 TO-205A mosfet p-channel 10A irf TS-001-5 TS-001 1-888-INTERSIL TS-001AA RATING/10

BUZ MOSFET

Abstract: mosfet BUZ 326 295 BSS 296 BSS 297 BSS 7728 BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B BUZ 41A BUZ 42 BUZ 50A BUZ 50B BUZ 50C BUZ 51 BUZ 60 BUZ 61 BUZ 61A BUZ 72 BUZ 72A BUZ 72AL BUZ 72L BUZ 73 BUZ 73A BUZ 73AL BUZ 73L BUZ 74 BUZ 74A BUZ 76 BUZ 76A BUZ 77A BUZ 77B BUZ 78 BUZ 80 BUZ 80A BUZ 81 BUZ 90 BUZ 90A BUZ 91A BUZ 92 BUZ 93 BUZ 100 BUZ 100L BUZ 100S BUZ 100SL VDS [V] R DSon [] -240 20.00 250 100.00 -50 10.00 50 0.30 100 0.80 200
Siemens
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mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 615NV PL-03-821 B152-H6493-G5-X-7600

BUZ MOSFET

Abstract: mosfet BUZ 326 296 BSS 297 BSS 7728 BUZ 20 BUZ 21 BUZ 21L BUZ 22 B U Z 30A BUZ 31 BUZ 31 L BUZ 32 BUZ40B BUZ 41A BUZ 42 BUZ 50A BUZ 50B BUZ 50C BUZ 51 BUZ 60 BUZ 61 BUZ 61A BUZ 72 BUZ 72A BUZ 72AL BUZ 72L BUZ 73 BUZ 73A BUZ 73AL BUZ 73L BUZ 74 BUZ 74A BUZ 76 BUZ 76A B U Z 77A B U Z77B BUZ 78 BUZ 80 BUZ 80A BUZ 81 BUZ 90 BUZ 90A B U Z 91A BUZ 92 BUZ 93 BUZ 100 B U Z 100L BUZ 100S BUZ 100SL -240 250 -50 50 100 200 , . .4 .0 77.00 T0-220 1.2. . 2.0 70.00 T0-220 i not for new design BUZ 101 BUZ 101 L BUZ 101S
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BUZ MOSFET 334 spd14n05 mosfet BUZ 349 BUZ 100 MOSFET mosfet buz 90a km 8560 BSP318S

of mosfet BUZ 384

Abstract: BUZ MOSFET verknüpften Kapazitäten (Beispiel: BUZ 338 Parameter: VGS = 0 V, f = 1 MHz) Figure 11 Voltage Dependence of Associated Capacitances (example: BUZ 338; parameters: VGS = 0 V, f = 1 MHz) 2.1.2 , (Beispiel: BUZ 338, Parameter: 80-µs-Pulstest, VDS = 25 V, Tj = 25 °C und 150 °C) Figure 12 Typical Transfer Characteristic (example: BUZ 338, parameters: 80 µs pulse test, VDS = 25 V, Tj = 25 °C and 150 , 13 Typ. Ausgangscharakteristik (Beispiel: BUZ 338, Parameter: 80-µs-Pulstest, TC = 25 °C
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of mosfet BUZ 384 thyristor capacitive discharge ignition tig welding BUZ 338 transistor CF leistungstransistoren MIL-STD-883 MIL-STD883

BSS125

Abstract: transistor BC SERIES switched on the MOSFET gates are discharged via the BC 327/25 pnp transistor. Discharge time is determined , saturation also limits the time a transformer can hold a MOSFET in the on-state. To overcome this problem , BSS125 BC 327 +5 V CLK +310 V BUZ 385 & 6 R Q 1 S BC 337 BC 327 T2 BUZ 385 * 4013 3 & 5 CLK D _ 2 Q BSS125 BC 327 +5 V 560 pF 1 , stage Pulse voltage 15 V 10 10 V 5 BUZ 385 Input pulse (1.5 µs) 5 0 ID Gate
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transistor BC SERIES Baw delay line 4013 flipflop bc 4013 TRANSISTOR BC 560 bipolar BC transistor

BUZ MOSFET

Abstract: SIEMENS MOSFET application Group 1 MOSFET Fundamentals b c a d SIP00317 SIP 1 SIP 2 SIP 3 m-FET , 830,000 instead of 590,000 cells per square centimeter ­ Semiconductor Group 2 MOSFET , Technologies Semiconductor Group 3 MOSFET Fundamentals S-FET Properties At a Glance · The , BUZ 102SL, for example. This means that at a gate-source voltage of 3 V, a current of only 90 µA , avoided. Figure 4 Influence of Chip Area on Thermal Resistance Semiconductor Group 4 MOSFET
Siemens
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SIEMENS MOSFET application Mosfet 1 cell switch low voltage low resistance P-DSO-28 P-DS0-28

BUP314

Abstract: BUP307 numerous measurements on each test item are listed in Table 1. The MOSFET (BUZ 334) and the IGBT (BUP , frequencies above 70 kHz does the currenthandling capacity of the BUP 401S drop to that of the BUZ 334 MOSFET , V 600 V 600 V 1200 V 1200 V 1200 V Type IGBT IGBT IGBT IGBT MOSFET , switching losses ETS = PS / (f · ICE) BUZ 334 BUP 401S ICE f TON/T TSINK PD RthJC 4.0 A , Comparison of test results of a MOSFET transistor and a high-speed IGBT output of the frequency inverter
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BUP410 BUP410S BUP401 BUZ334 BUP307 BUP314 igbt types siemens bup314 BUP401S

DC chopper

Abstract: BSP149 equivalent used to simulate the DC and AC behaviour of all types in the BUZ, BSS, BTS and BSP series, in standard , following subcomponents: DC-relevant subcomponents: a) The inner MOSFET MBUZ describes the characteristic , represented as 'depletion mode MOSFET' MVRD. The voltage dependence of the drain resistance is caused by , junction. This field effect narrows the current path between the source islands of the MOSFET when the , technological steps which reduce the starting voltage of the MOSFET and at the same time shift the capacitance
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BSP149 DC chopper BSP149 equivalent kp1022 n mosfet depletion pspice model parameters depletion mode mosfet 100 MHz

irf630 irf640

Abstract: IRF250N n MOSFET, BUZ TO 220AB V, I,A R(.), 14,0, 0,1 50 30,0 0,04 9,0 0,25 100 19,0 , (Power MOSFET) HARRIS Power MOSFET. n , p , . , , . : , , , . . Power MOSFET, IRF p . V, I,A R(.), Mega FET n 100 200 400 500 1000 0,4 0,8 1,3 5,6 9,2 14,0 28,0 40,0 0,45 0,80 3,3 5,0 9,0 18,0 33,0 , MOSFET RLP1N08LE, RLP5N08LE . V, I(.),A R(.), 1 0,75 80 5,5 0,12 TO 220AB RLP1N08LE
Harris Semiconductor
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IRFP460 irf630 irf640 IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 IRFD112 IRFD120 IRF120 IRF140 IRF150 IRF510

of mosfet BUZ 384

Abstract: simple SL 100 NPN Transistor Spannungsabhängigkeit der verknüpf ten Kapazitäten (Beispiel: BUZ 338 Parameter: FG S = 0 V , / = 1 MHz) 2.1.2 Kennlinienfeld Figure 11 Voltage Dependence of Associated Capacitances (example: BUZ 338; parameters: l''G S = , Technische Angaben Technical Information 13 BUZ SILOOOM 25" CI / / 15 0 "C 0 0 1 2 y 3 4 5 6 7 8 V -10 K;s Bild 12 Typische Übertragungscharakteristik (Beispiel: BUZ 338 , Typical Transfer Characteristic (example: BUZ 338, parameters: 80 us pulse test, FD S = 25 V, 7} = 25 °C
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simple SL 100 NPN Transistor Siemens Dioden test transistors fgs npn ANALOG DEVICES bar code on the lable SIL00001 SIL00002 MILSTD-883

chip die npn transistor

Abstract: car ignition circuit diagram verknüpf ten Kapazitäten (Beispiel: BUZ 338 Parameter: VG S = 0 V ,/= 1 MHz) 2.1.2 Kennlinienfeld Liegt an , Voltage dependence of associated capacitances (example: BUZ 338; parameters: VG S = 0 V , / = 1 MHz) 2.1.2 , Angaben Technical Inform ation 7 BUZ 338 -1 r 25 C 11 r 15 0 C SIL00014 i I / 1 , 12 Typische Übertragungscharakteristik (Beispiel: BUZ 338, Parameter: 8 0 | i S Pulstest, Vos = 25 V , (example: BUZ 338, parameters: 80|is pulse test, V 'ds = 25 V, Tt = 25 °C and 150 °C) The transistor is
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chip die npn transistor car ignition circuit diagram Siemens Halbleiter car ignition Leistungsdiode

Siemens BUZ 72A

Abstract: BUZ MOSFET . Semiconductor Group 1 MOSFET Application Hints 2 Switching Behavior of a Power MOSFET under the , power MOSFET cell, together with the main equivalent circuit components. Figure 2 shows the circuit , switch-on process. Semiconductor Group 2 MOSFET Application Hints Figure 2 The Gate Charge , layer capacitance of the epitaxial layer, still has any effect. Semiconductor Group 3 MOSFET , FET. Semiconductor Group 4 MOSFET Application Hints 3 Taking Account of the Important
Siemens
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Siemens BUZ 72A MOSFET Application Hints P-Channel Depletion Mosfets MOSFETs Application Hints

BUZ12

Abstract: SIPMOS application note between the following subcomponents: DC-relevant subcomponents: a) The inner MOSFET MBUZ describes the , , is represented as 'depletion mode MOSFET' MVRD. The voltage dependence of the drain resistance is , drain-source pn junction. This field effect narrows the current path between the source islands of the MOSFET , MOSFET and at the same time shift the capacitance curves toward higher voltages. This circuit variant is , from the MOSFET input characteristic Id = Id(Ug) at Uds = const The input characteristic of the
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BUZ41A BUZ12 SIPMOS application note depletion MOSFET SPICE n mosfet depletion note BUZ12AL BUZ100S

BUZ10

Abstract: buz10 equivalent BUZ10 ® N - CHANNEL 50V - 0.06 - 23A TO-220 STripFETTM MOSFET T YPE s s s s s R DS(o n) ID 50 V BUZ 10 V DSS < 0.07 23 A TYPICAL RDS(on) = 0.06 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG
STMicroelectronics
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buz10 equivalent stmicroelectronics datecode P011C
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