BUY69A BUY69B BUY69C - Datasheet Archive

Product Specification BUY69A BUY69B BUY69C Silicon NPN Power Transistors DESCRIPTION With TO-3 package High voltage capability

Inchange Semiconductor Product Specification BUY69A BUY69A BUY69B BUY69B BUY69C BUY69C Silicon NPN Power Transistors DESCRIPTION With TO-3 package High voltage capability APPLICATIONS For horizontal deflection output stage of CTV receivers and high voltalge, fast switching and industrial applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol TOR UC Absolute maximum ratings(Ta=25) SYMBOL VCBO PARAMETER VCEO(SUS) VEBO CHA IN Collector-emitter sustaining voltage BUY69A BUY69A E SEM NG Collector-base voltage Emitter-base voltage OND IC CONDITIONS BUY69B BUY69B Open emitter BUY69C BUY69C BUY69A BUY69A BUY69B BUY69B Open base BUY69C BUY69C VALUE UNIT 1000 800 V 500 400 325 V 200 Open collector 8 V IC Collector current 10 A ICM Collector current-peak 15 A IB Base current 3.0 A PD Total power dissipation 100 W Tj Junction temperature 200 Tstg Storage temperature -65~200 MAX UNIT 1.75 /W TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BUY69A BUY69A BUY69B BUY69B BUY69C BUY69C Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUY69A BUY69A VCEO(SUS) Collector-emitter sustaining voltage BUY69B BUY69B IC=100mA ; IB=0 UNIT V 325 200 BUY69A BUY69A Collector-base voltage MAX 400 BUY69C BUY69C VCBO TYP. 1000 BUY69B BUY69B IC=1mA; IE=0 V 800 BUY69C BUY69C 500 VCEsat Collector-emitter saturation voltage IC=8A ;IB=2.5A 3.3 V VBEsat Base-emitter saturation voltage IC=8A ;IB=2.5A 2.2 V ICES Collector cut-off current VCE=rated VCES; VBE=0 1.0 mA IEBO Emitter cut-off current 1.0 mA hFE fT IC=2.5A ; VCE=10V Transition frequency IC=0.5A ; VCE=10V;f=1MHz INC Rise time E SEM ANG H ts Storage time tf TOR UC OND IC DC current gain Switching times tr VEB=8V; IC=0 15 10 MHz Fall time 2 s 1.8 s 1.0 IC=5A ;IB1=-IB2=1.0A; VCC=250V 0.3 s Inchange Semiconductor Product Specification BUY69A BUY69A BUY69B BUY69B BUY69C BUY69C Silicon NPN Power Transistors PACKAGE OUTLINE E SEM NG CHA IN OND IC Fig.2 Outline dimensions 3 TOR UC