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Part Manufacturer Description Datasheet BUY
LT1006MH Linear Technology IC OP-AMP, 460 uV OFFSET-MAX, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1006MJ8 Linear Technology IC OP-AMP, 460 uV OFFSET-MAX, CDIP8, 0.300 INCH, HERMETIC SEALED, CERDIP-8, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1078CH Linear Technology IC DUAL OP-AMP, 460 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
MAX3318CDBR Texas Instruments 2.5-V 460-Kbps RS-232 Transceiver With +/-15 KV ESD Protection 20-SSOP 0 to 70 visit Texas Instruments Buy
MAX3318EIDBG4 Texas Instruments 2.5-V 460-KBPS RS-232 Transceiver with IEC 61000-4-2 ESD-Protection 20-SSOP -40 to 85 visit Texas Instruments
TRS3318CDBRG4 Texas Instruments 2.5-V 460-kbps RS-232 Transceiver With +/-15-kV ESD Protection 20-SSOP 0 to 70 visit Texas Instruments
TRS3318ECPWRG4 Texas Instruments 2.5-V 460-Kbps RS-232 Transceiver With +/-15-kV ESD Protection 20-TSSOP 0 to 70 visit Texas Instruments
MAX3318CDBRG4 Texas Instruments 2.5-V 460-Kbps RS-232 Transceiver With +/-15 KV ESD Protection 20-SSOP 0 to 70 visit Texas Instruments
MAX3318IDBR Texas Instruments 2.5-V 460-Kbps RS-232 Transceiver With +/-15 KV ESD Protection 20-SSOP -40 to 85 visit Texas Instruments Buy
MAX3318EIDBRG4 Texas Instruments 2.5-V 460-KBPS RS-232 Transceiver with IEC 61000-4-2 ESD-Protection 20-SSOP -40 to 85 visit Texas Instruments
TRS3318CPWG4 Texas Instruments 2.5-V 460-kbps RS-232 Transceiver With +/-15-kV ESD Protection 20-TSSOP 0 to 70 visit Texas Instruments
TRS3318IPWRG4 Texas Instruments 2.5-V 460-kbps RS-232 Transceiver With +/-15-kV ESD Protection 20-TSSOP -40 to 85 visit Texas Instruments

BUV 460 C

Catalog Datasheet MFG & Type PDF Document Tags

BUF 460 AV

Abstract: IC 2030 schematic diagram MODULES BIPOLAR IN ISOTOP ISOTOP : Faston version Bipolar transistors o C H DARLINGTONS (3) Darlingtons Internal schematic diagrams DARLINGTONS plus freewheel diode (4) 'c VCBO VCEO Ptot Type Internal VCE (sat) @ >c ' 'B »d + lr «si tfi VCEV* schematic «s* «f* See NOTE diagram max , '" 4.5 0.5 24 600 450 125 â'¢ ESM 3045 DV 4 1.4 typ 20 1.2 â'" 4 0.4 30 1000 450 150 BUV 98 AV 1 1.5 16 3.2 1 5 * 0.4* 30 1200 600 150 BUV 98 BV 1 2.5 30 1 1 6 0.6 30 1200 700 150 BUV 98 CV 1 3 20 8 1 6
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ksd 302 250v, 10a

Abstract: irf 5630 . In der Regel gelten diese Werte bei 25°C wenn nicht anders vermerkt wurde. â'c Bei Transistoren , apply at 25°C, unless otherwise indicated. "c With transistors, the usal situation is for UC 0 , inferieure (> = min.) garantie. En regie g6nerale ces valeurs sont valables a une temperature de 25°C, sauf , quelli superiori (< = max.) o inferiori (> = min.) garantiti. Di regola, i valori si riferiscono a 25° C , (> = min.). Por regia general y salvo indication contraria, estos valores son validos con 25° C. Uc
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Abstract: ) TJ, JUNCTION TEMPERATURE (°C) Figure 46. Ratio (fastOVP Threshold, VFOVP/BUV Rising) over VREF vs , ) Line Range Detection pfcOK Signal This is a Pb-Free Device PIN CONNECTIONS FOVP/BUV Feedback , Detection (BUV) · Low Duty-cycle Operation if the Bypass Diode is · Open Ground Pin Fault Monitoring · , Feedback and FOVP/BUV pins are not connected Thermal Shutdown Latched Off Capability · PC Power Supplies , Figure 1. Typical Application Schematic Table 1. MAXIMUM RATINGS Symbol VCC FOVP/BUV Feedback VCONTROL ON Semiconductor
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BUV 460 C

Abstract: ) TJ, JUNCTION TEMPERATURE (°C) Figure 45. Ratio (fastOVP Threshold, VFOVP/BUV Rising) over VREF vs , is Forced at Low Current Levels PIN CONNECTIONS FOVP/BUV Feedback Vcontrol Vsense FFcontrol (Top , Pin for Fast Over-Voltage Protection (FOVP) · · · · · · and Bulk Under-Voltage Detection (BUV) Soft , Limitation Disable Protection if the Feedback and FOVP/BUV pins are not connected Thermal Shutdown · , Characteristics Maximum Power Dissipation @ TA = 70°C Thermal Resistance Junction-to-Air Operating Junction
ON Semiconductor
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Abstract: (17.0 V) Line Range Detection pfcOK Signal This is a Pbâ'Free Device PIN CONNECTIONS FOVP/BUV , the Bypass Diode is and Bulk Underâ'Voltage Detection (BUV) Soft Overâ'Voltage Protection , Disable Protection if the Feedback and FOVP/BUV pins are not connected Thermal Shutdown  , Power Dissipation and Thermal Characteristics Maximum Power Dissipation @ TA = 70°C Thermal , TYPICAL ELECTRICAL CHARACTERISTICS (Conditions: VCC = 15 V, TJ from â'40°C to +125°C, unless otherwise ON Semiconductor
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ncp1612

Abstract: BUV 460 C ) TJ, JUNCTION TEMPERATURE (°C) Figure 45. Ratio (fastOVP Threshold, VFOVP/BUV Rising) over VREF vs , is Forced at Low Current Levels PIN CONNECTIONS FOVP/BUV Feedback Vcontrol Vsense FFcontrol (Top , Pin for Fast Over-Voltage Protection (FOVP) · · · · · · and Bulk Under-Voltage Detection (BUV) Soft , Limitation Disable Protection if the Feedback and FOVP/BUV pins are not connected Thermal Shutdown · , Characteristics Maximum Power Dissipation @ TA = 70°C Thermal Resistance Junction-to-Air Operating Junction
ON Semiconductor
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Abstract: is a Pb-Free Device FOVP/BUV Feedback July, 2013 â' Rev. 3 pfcOK VCC DRV Vsense , '¢ Low Duty-cycle Operation if the Bypass Diode is and Bulk Under-voltage Detection (BUV) Soft , Current Limitation Disable Protection if the Feedback and FOVP/BUV pins are not connected Thermal , Dissipation and Thermal Characteristics Maximum Power Dissipation @ TA = 70°C Thermal Resistance , ELECTRICAL CHARACTERISTICS (Conditions: VCC = 15 V, TJ from â'40°C to +125°C, unless otherwise specified ON Semiconductor
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Abstract: â'¢ â'¢ â'¢ â'¢ â'¢ November, 2013 â' Rev. 1 Open Pin Protection for FB and FOVP/BUV Pins , HV Restart VCC DRV GND CS/ZCD PFCOK PSTimer FOVP/BUV VCC VControl DRV , Industries, LLC, 2013 = Specific Device Code = A, B, C or D = Assembly Location = Wafer Lot = Year = Work Week = Pbâ'Free Package ORDERING INFORMATION Adjustable Bulk Undervoltage Detection (BUV , FOVP/BUV VControl FFControl Fault STDBY NCP1615XG AWLYWW NCP1615XG AWLYWW See detailed ON Semiconductor
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NCP1615 NCP1615X NCP1615/D

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SC906 In h a lts v e r z e ic h n is T a b le o f c o n te n ts S o m m a ire In d ic e In d ic e , L e x iq u e d e d o n n d e s E n c ic lo p e d ia d a ti V e r g le ic h s ta b e lle C o m p a r is o n ta b le T a b le d E q u iv a le n c e T a b la c o m p a ra tiv a T a b la c o m p a ra tiv a L e x ic o n d e d a to s A n s c h lu f i P in D e s s in s d e s D esegni E squem as z e ic h n u n g e n a s s ig n m e n ts ra c c o r d e m e n ts d i te r m in a l! d e c o n e x
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Transistor 2SA 2SB 2SC 2SD 2SC906 2SA1281 2SK596 bup 3130 C3885A PA63H MPA68H BD241
Abstract: 1 NCP1615X X A WL Y WW G = Specific Device Code = A, B, C, C2, D or D2 = Assembly , '¢ â'¢ â'¢ â'¢ â'¢ Open Pin Protection for FB and FOVP/BUV Pins Internal Thermal Shutdown , 14 16 Adjustable Bulk Undervoltage Detection (BUV) Soft Overvoltage Protection Line Overvoltage Protection Overcurrent Protection HVFB FB Restart FOVP/BUV VControl FFControl Fault STDBY , PSTimer FOVP/BUV VCC VControl DRV FFControl GND Fault CS/ZCD STDBY NCP1615 ON Semiconductor
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Abstract: â'¢ â'¢ â'¢ â'¢ â'¢ October, 2013 â' Rev. 0 Open Pin Protection for FB and FOVP/BUV Pins , HV Restart VCC DRV GND CS/ZCD PFCOK PSTimer FOVP/BUV VCC VControl DRV , Industries, LLC, 2013 = Specific Device Code = A, B, C or D = Assembly Location = Wafer Lot = Year = Work Week = Pbâ'Free Package ORDERING INFORMATION Adjustable Bulk Undervoltage Detection (BUV , FOVP/BUV VControl FFControl Fault STDBY NCP1615XG AWLYWW NCP1615XG AWLYWW See detailed ON Semiconductor
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vhf uhf tuner

Abstract: vhf mixer oscillator ic PD Operating Temperature Range Topr Storage Temperature Range Tstg (TA=25°C) Unit V mW °C °C Ratings 7 *550 -20 to +75 -40 to +125 * Test IC soldered on PC board RECOMMENDED , Output flocal=55.25 to 801.25MHz Level Symbol Icc1 Icc2 Min. 4.5 (TA=25°C) Max. Unit 5.5 V Typ. 5.0 (Vcc=5V,TA=25°C, IF=45.75MHz) Min. Typ. Max. Unit 35 41 56 mA 37 43 58 , NJM2531A DC ELECTRICAL CHARACTERISTICS (VCC=Vosc=Vmix=5V,TA=25°C,UHF:Vb=2.97V,VHF:Vb=2.98V) Parameter
New Japan Radio
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SSOP16 NJM2531AV vhf uhf tuner vhf mixer oscillator ic HVU202A 1T363A

st smd diode marking code BUH

Abstract: diode smd marking BUF 0.41 0.006 0.087 0.016 E A1 A2 L b c E c 5.40 4.30 3.60 1.15 5.60 0.201 0.213 0.220 4.60 , (Tamb = 25°C) Symbol PPP P IFSM Tstg Tj TL Parameter Peak pulse power dissipation (see note 1) Power , = Tamb Tamb = 50° C tp = 10ms Tj initial = Tamb Value 600 5 100 - 65 to + 175 150 260 Unit W W A °C °C °C Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit , recommended pad layout Parameter Value 20 100 Unit °C/W °C/W August 2001- Ed: 3 1/6 SMBJxxxA-TR
STMicroelectronics
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st smd diode marking code BUH diode smd marking BUF diode smd marking Bva diode smd marking BBE diode smd marking BUj diode smd marking BUE SMBJ188A-TR DO-214AA

diode smd marking BUF

Abstract: marking CODE R SMD DIODE SMB J 36 CA low voltage supplied IC's. SMB (JEDEC DO-214AA) ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol , infinite heatsink Tamb = 50°C IFSM Non repetitive surge peak forward current for unidirectional , W 100 A - 65 to + 175 150 °C °C 260 °C Value Unit Note 1 : For a surge , Parameter Rth (j-l) Junction to leads 20 °C/W Rth (j-a) Junction to ambient on printed circuit on recommended pad layout 100 °C/W January 1998 Ed: 3 1/6 SMBJxxxA-TR, CA-TR
STMicroelectronics
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marking CODE R SMD DIODE SMB J 36 CA diode smd marking "BUF" smd diode code buh SMD CODE BUQ SMBJ SMBJ10CA-TR

st smd diode marking code BUH

Abstract: diode smd marking BUF -214AA) ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol PPP Parameter Value Peak pulse power dissipation (see note 1) Tj initial = Tamb Power dissipation on infinite heatsink Tamb = 50°C IFSM , for soldering during 10 s. P Unit 600 W 5 W 100 A - 65 to + 175 150 °C °C 260 °C Value Unit Note 1 : For a surge greater than the maximum values, the diode , leads 20 °C/W Rth (j-a) Junction to ambient on printed circuit on recommended pad layout
STMicroelectronics
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smd diode order marking code stmicroelectronics STMicroelectronics smd marking code marking bbz STMicroelectronics smd DIODE marking code st smd diode marking code BUZ diode SMBJ170A-TR

diode smd marking BUF

Abstract: smd diode code buh low voltage supplied IC's. SMB (JEDEC DO-214AA) ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol , dissipation on infinite heatsink Tamb = 50°C IFSM Non repetitive surge peak forward current for , 100 A - 65 to + 175 150 °C °C 260 °C Value Unit Note 1 : For a surge greater , Parameter Rth (j-l) Junction to leads 20 °C/W Rth (j-a) Junction to ambient on printed circuit on recommended pad layout 100 °C/W January 1998 Ed: 3 1/6 SMBJxxxA-TR, CA-TR
STMicroelectronics
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diode smd marking "BBE" smd code buz smb diode smd marking BBf smd code buh diode smd marking BUA diode smd marking "BUE"

OSC 25MHz

Abstract: uhf amp circuit diagrams PD Operating Temperature Range Topr Storage Temperature Range Tstg (TA=25°C) Unit V mW °C °C Ratings 7 550 -20 to +75 -40 to +125 RECOMMENDED OPERATING VOLTAGE RANGE Parameter , Symbol Icc1 Icc2 Min. 4.5 (TA=25°C) Max. Unit 5.5 V Typ. 5.0 (Vcc=5V,TA=25°C, IF , (VCC=Vosc=Vmix=5V,TA=25°C,UHF:Vb=2.97V,VHF:Vb=2.98V) Parameter Condition Symbol Min. Typ. Max. Pin3 , =2.98v,1-2PinShort Ivosc 4.60 Vsw=2v,Vb=2.97v,4-5PinShort Iuosc Pin4 Current 1.30 5.70 Pin13 Voltage Vsw
New Japan Radio
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OSC 25MHz uhf amp circuit diagrams vhf amplifier dc to ac convertion circuit diagram

st smd diode marking code BUH

Abstract: diode smd marking BUF -214AA) ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter Value Peak pulse power dissipation (see note 1) Tj initial = Tamb Power dissipation on infinite heatsink Tamb = 50°C IFSM Non , during 10 s. PPP P Unit 600 W 5 W 100 A - 65 to + 175 150 °C °C 260 °C Value Unit Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Parameter Rth (j-l) Junction to leads 20 °C/W
STMicroelectronics
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buk 154 smd diode smb marking code 31 BUV 460 C SMBJ15CATR st smd diode marking code BUL st smd diode marking code BUm

SMBJ5.0A DO214AA

Abstract: marking code BBW 4.30 4.60 0.159 0.169 0.181 D L 2.15 E1 b 1.90 E A2 Max. c , and 3 SMBJxxxCA-TR See pages 2 and 3 Absolute maximum ratings (Tamb = 25°C) Symbol Parameter Value Tj initial = Tamb Power dissipation on infinite heatsink Tamb = 50°C IFSM , power dissipation (1) PPP Unit °C Tj Maximum junction temperature 150 °C TL Maximum lead temperature for soldering during 10 s. 260 °C Value Unit 1. For a surge
STMicroelectronics
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SMBJ5.0A DO214AA marking code BBW SMBJ5.0A buz bbg "marking" diode st marking BBM code SMBJ5.0A

bbc ds diodes DS 1,8

Abstract: diode smd marking BUE S G S - ÏH O M S O N S M B J 5 .0 A -T R ,C A -T R [ M r e ® * S S M B J 1 8 8 A -T R ,C A -T R Å" @ [ E L [ iO TRANS ILâ"¢ FEATURES â  PEAK PULSE POWER: 600 W (10/1 , MAXIMUM RATINGS (Tamb = 25°C) Parameter Symbol Value Peak pulse power dissipation (see note 1) Tj initial â'"Tamb Power dissipation on infinite heatsink Tamb = 50°C Ifsm Non , ° c ° c Value Unit Note 1 : For a surge greater than the maximum values, the diode will
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bbc ds diodes DS 1,8 bbc ds diodes DS20-800 B

st marking BBM code

Abstract: bbn DIODE and 3 SMBJxxxCA-TR See pages 2 and 3 Absolute maximum ratings (Tamb = 25° C) Symbol Parameter Value Tj initial = Tamb Power dissipation on infinite heatsink Tamb = 50° C IFSM , power dissipation (1) PPP Unit °C Tj Maximum junction temperature 150 °C TL Maximum lead temperature for soldering during 10 s. 260 °C Value Unit 1. For a surge , Symbol Parameter Rth (j-l) Junction to leads 20 ° C/W Rth (j-a) Junction to ambient
STMicroelectronics
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bbn DIODE SMBJ18A-TR st marking BBN code A 3700 SMBJ10A-TR SMBJ12A-TR

bbc 127 324 DIODE

Abstract: st marking BBM code leakage current: ­ 0.2 µA at 25 °C ­ 1 µA at 85 °C SMB (JEDEC DO-214AA) High power capability at Tj max: ­ 515 W (10/1000 µs) Bidirectional Operating Tj max: 150 °C K , Characteristics SMBJ 1 Characteristics Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol , temperature range -65 to +150 °C Tj Operating junction temperature range -55 to +150 °C TL Maximum lead temperature for soldering during 10 s. 260 °C Value Unit Tj initial
STMicroelectronics
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bbc 127 324 DIODE st 718 diode SMBJ30A DO-214AA smbj marking code smbj33ca BUV 481 MIL-STD-750 RS-481

BUV 481

Abstract: bbg "marking" diode range: from 5 V to 188 V Unidirectional and bidirectional types Operating Tj max: 150 °C , . Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit 600 W 6 W , heatsink Tamb = 30 °C IFSM Non repetitive surge peak forward current for unidirectional types tp = 10 ms Tj initial = Tamb Tstg Storage temperature range -65 to +150 °C Tj Operating junction temperature range -55 to +150 °C TL Maximum lead temperature for soldering
STMicroelectronics
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IPC7531 bbg marking st transil ST BUN marking BBW SMBJ24a MARKING cbw IEC61000-4-2 IEC61000-4-5 UL94V-0 IEC60286-3 IEC61000-4-4

st marking BBM code

Abstract: bbn DIODE and 3 SMBJxxxCA-TR See pages 2 and 3 Absolute maximum ratings (Tamb = 25° C) Symbol Parameter Value Tj initial = Tamb Power dissipation on infinite heatsink Tamb = 50° C IFSM , power dissipation (1) PPP Unit °C Tj Maximum junction temperature 150 °C TL Maximum lead temperature for soldering during 10 s. 260 °C Value Unit 1. For a surge , Symbol Parameter Rth (j-l) Junction to leads 20 ° C/W Rth (j-a) Junction to ambient
STMicroelectronics
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SMBJ36ATR BUA DIODE marking BBO code MARKING BVA SMBJ40CA-TR bbz mark

bbc 127 324 DIODE

Abstract: marking bbz 25 °C ­ 1 µA at 85 °C Operating Tj max: 150 °C High power capability at Tj max: ­ 515 W (10/1000 µs , Characteristics Absolute maximum ratings (Tamb = 25 °C) Parameter Peak pulse power dissipation (1) Storage , initial = Tamb Value 600 -65 to +150 -55 to +150 260 Unit W °C °C °C 1. For a surge greater than the , resistances Parameter Junction to leads Junction to ambient on recommended pad layout Value 20 100 Unit °C/W °C/W Figure 1. Electrical characteristics - definitions I I IPP Symbol VRM VBR VCL IRM
STMicroelectronics
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SMBJ16CA-TR 0/bbc 127 324 DIODE marking BUZ SMBJ40A SFH3500-5/bbc 127 324 DIODE

bbc 127 324 DIODE

Abstract: marking code BBW leakage current: ­ 0.2 µA at 25 °C ­ 1 µA at 85 °C A K Unidirectional Operating Tj max: 150 °C High power capability at Tjmax: ­ 515 W (10/1000 µs) Bidirectional SMB , . Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit 600 W PPP Peak pulse power dissipation (1) Tstg Storage temperature range -65 to +150 °C Tj Operating junction temperature range -55 to +150 °C TL Maximum lead temperature for soldering during 10 s
STMicroelectronics
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SMBJ12A bbc 127 324 marking code BUH SMBJ15 SMBJ6.0A/CA

bbc 127 324 DIODE

Abstract: 1.0 SMBJ junction temperature, use the following formulas: VBR @ TJ = VBR @ 25°C x (1 + αT x (TJ â'" 25) VCL @ TJ = VCL @ 25°C x (1 + αT x (TJ â'" 25) 4. Surge capability given for both directions for , . reverse applied voltage for unidirectional types (typical values) C(pF) Junction capacitance versus reverse applied voltage for bidirectional types (typical values) C(pF) 10000 F=1 MHz Vosc , 2.20 0.077 0.087 c 0.15 0.40 0.006 0.016 D 3.30 3.95 0.130 0.156
STMicroelectronics
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1.0 SMBJ
Abstract: 34921 Temperature Range (TA) 0°C to 70°C 64 LQFP-EP B+ B+ GATEOUT 5.0 V 3.3 V VCORE , Motor C SB/LSOUT1 BDCMA CPWMB B A SB/LSOUT2 SA/CDCMB DGND BPWM BDCMB GND Figure , select. 2 Definition Ground. 3 SA/CDCMA Unipolar Step A/ DC Motor C Output A Step Motor Output A or DC Motor C Output A. 4 SA/CDCMB Unipolar Step A/ DC Motor C Output B Step Motor Output A or DC Motor C Output B. 5 SB/LSOUT1 Unipolar Step B/ Low-Side 1 Step Motor Freescale Semiconductor
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MC34921 98ARH98426A 64-LEAD

mosfet triggering circuit for dc motor

Abstract: agilent encoder sensor heds Range (TA) Package MC34921AE/R2C to 70°C 64 LQFP-EP B+ B+ GATEOUT 5.0 V 3.3 V , CPWMA Step Motor C SB/LSOUT1 BDCMA CPWMB B A DC Motor A SB/LSOUT2 SA/CDCMB , / DC Motor C Output A Step Motor Output A or DC Motor C Output A. 4 SA/CDCMB Unipolar Step A/ DC Motor C Output B Step Motor Output A or DC Motor C Output B. 5 SB/LSOUT1 Unipolar , Name Formal Name Definition 54 CE Chip Enable 55 CPWMA/CDCPWM Motor Driver C
Freescale Semiconductor
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mosfet triggering circuit for dc motor agilent encoder sensor heds report on dc motor bi directional dc motor speed controller Motor driven pwm based bidirectional dc motor speed control

spwm

Abstract: HEDS-9711 34921 Temperature Range (TA) 0°C to 70°C 64 LQFP-EP B+ B+ GATEOUT 5.0 V 3.3 V VCORE , Motor C SB/LSOUT1 BDCMA CPWMB B A SB/LSOUT2 SA/CDCMB DGND BPWM BDCMB GND Figure , output voltage select. 2 Definition Ground. 3 SA/CDCMA Unipolar Step A/ DC Motor C Output A Step Motor Output A or DC Motor C Output A. 4 SA/CDCMB Unipolar Step A/ DC Motor C Output B Step Motor Output A or DC Motor C Output B. 5 SB/LSOUT1 Unipolar Step B/ Low-Side 1
Freescale Semiconductor
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spwm HEDS-9711 G38-87 JESD51-2 MC34921AE analog encoder

phillips 031 ko Capacitor

Abstract: GVL01 / Internal Clamp Mode\ \External Clamp Modç/ RGB Bright 1Q/UV Clamp R.G.B. S/H 111 Cutoff Clamp I C Bus , was subjected to Y/C separation. m m Burst level : 300 mV, P-P -mwm 2.5 V -GND 14 Chroma GND , ns (4.43) 360 ns (3.58/ M / N) 405 ns (4.43) 410 ns (3.58/ M / N) 455 ns (4.43) 460 ns (3.58/ M / N , Peak detection stopping Pulse MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Supply , Level B : C = 1 : 1 â'" 300 â'" mVp_p OSD/Analog RGB Input Level When OSD input (DC coupling) 4.2 â
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OCR Scan
TA1298AN phillips 031 ko Capacitor GVL01 cde tsc CSB503F 4v010 ADT100 980910EBA1 UUULMJI11111 O-6661 NV86ZLV1 88/Z8

7915a

Abstract: yx 801 / \ - K ^ X T7 ^ |* lil L fc 4 t'- y h · > > 7¡\s3- y 7° C M O S CPU 12, 17K 77- + ^ ^ ^ Jp ? r4 , > ? £ F*3¡&L X l ' Í t , I f c A S T , 1 ^ -y yT'B14HI. ^«fllÎC T '-f ^PD17005 ¿ t°> · =i Il ·* ^ , (4.5 MHz T K ^Ü ií-í-'ííffl) O 1 0 it;^ ® ñ lH Í 1^95 : 3 o / \ ° 7 - * > · U -tz y K C E S S B , J s (ROM) ·7 9 3 2 X 1 6 fc'v h « ftë T ^ T C O r tjlR O M X g T 'í:7 l - ' 7 fJI , - ''¿ - C $ r H Ü * tf- h t L T ^ f f l ï I (4 * , 4 * . 6 * , ·2*® ÿ ') 7 Jl/ · 0 ^ 7 1 - 7 ( 3 * +
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7915a yx 801 TFK ad 164 H13-31C st z7s SCR 131- 6 WJ 60 PD17P005 PD17003A APD17005 7932X16

2M2222A

Abstract: pj 1349 fxp HEWLETT-PACKARD COMPANY ii PREFACE This manual is the Engineering and R e f e r e n c e Doc u m e n t for the H e w l e t t - P a c k a r d HP 1000 M, E, and F-Series Computers. Similar inf o r m a t i o n , and R e f e r e n c e Document, part num b e r 02103-90009. The M-Series and E-Series Computers we r e first introduced by H e w l e t t - P a c k a r d as models 21MX M- S e r i e s and 21 M X E - S eries , . Therefore, any r e ferences to HP 1000 or HP21MX in this or related pub l i c a t i o n s are synonymous
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2M2222A pj 1349 fxp ERI - 35 - 2 YE 0515 TRANSFORMER 2m2222 cmps a42 transistor TTL 74LSxx

X2816

Abstract: hall marking code A04 OF CONTENTS R ockw ell S e m ic o n d u c to r C ross-R eference G u id e . R6501Q One-Chip M ic ro p ro c e s s o r. R6500/1 One-Chip M icrocom , Intelligent Peripheral C o n tro lle rs. R65/41EB and R65/41EAB Backpack E m u la to r. . R6500/43 and R6541Q One-Chip Intelligent Peripheral C o n tro lle rs , 3 R6800 M icro p ro c e s s o r and P e rip h e ra ls . Product Family O v e rv ie w
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X2816 hall marking code A04 JAPANESE 2SC TRANSISTOR DATA BOOK 2010 stepping motor EPSON EM 336 R68560/R68561 R6511Q R6500/1E