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Part Manufacturer Description Datasheet BUY
MAX3318CDBG4 Texas Instruments 2.5-V 460-Kbps RS-232 Transceiver With +/-15 KV ESD Protection 20-SSOP 0 to 70 visit Texas Instruments
MAX3318IDB Texas Instruments 2.5-V 460-Kbps RS-232 Transceiver With +/-15 KV ESD Protection 20-SSOP -40 to 85 visit Texas Instruments
MAX3318EIDB Texas Instruments 2.5-V 460-KBPS RS-232 Transceiver with IEC 61000-4-2 ESD-Protection 20-SSOP -40 to 85 visit Texas Instruments
TRS3318CDBR Texas Instruments 2.5-V 460-kbps RS-232 Transceiver With +/-15-kV ESD Protection 20-SSOP 0 to 70 visit Texas Instruments
TRS3318IPW Texas Instruments 2.5-V 460-kbps RS-232 Transceiver With +/-15-kV ESD Protection 20-TSSOP -40 to 85 visit Texas Instruments
TRS3318ECPWR Texas Instruments 2.5-V 460-Kbps RS-232 Transceiver With +/-15-kV ESD Protection 20-TSSOP 0 to 70 visit Texas Instruments Buy

BUV 460 C

Catalog Datasheet MFG & Type PDF Document Tags

BUF 460 AV

Abstract: IC 2030 schematic diagram MODULES BIPOLAR IN ISOTOP ISOTOP : Faston version Bipolar transistors o C H DARLINGTONS (3) Darlingtons Internal schematic diagrams DARLINGTONS plus freewheel diode (4) 'c VCBO VCEO Ptot Type Internal VCE (sat) @ >c ' 'B »d + lr «si tfi VCEV* schematic «s* «f* See NOTE diagram max , '" 4.5 0.5 24 600 450 125 â'¢ ESM 3045 DV 4 1.4 typ 20 1.2 â'" 4 0.4 30 1000 450 150 BUV 98 AV 1 1.5 16 3.2 1 5 * 0.4* 30 1200 600 150 BUV 98 BV 1 2.5 30 1 1 6 0.6 30 1200 700 150 BUV 98 CV 1 3 20 8 1 6
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ksd 302 250v, 10a

Abstract: irf 5630 . In der Regel gelten diese Werte bei 25°C wenn nicht anders vermerkt wurde. â'c Bei Transistoren , apply at 25°C, unless otherwise indicated. "c With transistors, the usal situation is for UC 0 , inferieure (> = min.) garantie. En regie g6nerale ces valeurs sont valables a une temperature de 25°C, sauf , quelli superiori (< = max.) o inferiori (> = min.) garantiti. Di regola, i valori si riferiscono a 25° C , (> = min.). Por regia general y salvo indication contraria, estos valores son validos con 25° C. Uc
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Abstract: ) TJ, JUNCTION TEMPERATURE (°C) Figure 46. Ratio (fastOVP Threshold, VFOVP/BUV Rising) over VREF vs , ) Line Range Detection pfcOK Signal This is a Pb-Free Device PIN CONNECTIONS FOVP/BUV Feedback , Detection (BUV) · Low Duty-cycle Operation if the Bypass Diode is · Open Ground Pin Fault Monitoring · , Feedback and FOVP/BUV pins are not connected Thermal Shutdown Latched Off Capability · PC Power Supplies , Figure 1. Typical Application Schematic Table 1. MAXIMUM RATINGS Symbol VCC FOVP/BUV Feedback VCONTROL ON Semiconductor
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BUV 460 C

Abstract: ) TJ, JUNCTION TEMPERATURE (°C) Figure 45. Ratio (fastOVP Threshold, VFOVP/BUV Rising) over VREF vs , is Forced at Low Current Levels PIN CONNECTIONS FOVP/BUV Feedback Vcontrol Vsense FFcontrol (Top , Pin for Fast Over-Voltage Protection (FOVP) · · · · · · and Bulk Under-Voltage Detection (BUV) Soft , Limitation Disable Protection if the Feedback and FOVP/BUV pins are not connected Thermal Shutdown · , Characteristics Maximum Power Dissipation @ TA = 70°C Thermal Resistance Junction-to-Air Operating Junction
ON Semiconductor
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Abstract: (17.0 V) Line Range Detection pfcOK Signal This is a Pbâ'Free Device PIN CONNECTIONS FOVP/BUV , the Bypass Diode is and Bulk Underâ'Voltage Detection (BUV) Soft Overâ'Voltage Protection , Disable Protection if the Feedback and FOVP/BUV pins are not connected Thermal Shutdown  , Power Dissipation and Thermal Characteristics Maximum Power Dissipation @ TA = 70°C Thermal , TYPICAL ELECTRICAL CHARACTERISTICS (Conditions: VCC = 15 V, TJ from â'40°C to +125°C, unless otherwise ON Semiconductor
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ncp1612

Abstract: BUV 460 C ) TJ, JUNCTION TEMPERATURE (°C) Figure 45. Ratio (fastOVP Threshold, VFOVP/BUV Rising) over VREF vs , is Forced at Low Current Levels PIN CONNECTIONS FOVP/BUV Feedback Vcontrol Vsense FFcontrol (Top , Pin for Fast Over-Voltage Protection (FOVP) · · · · · · and Bulk Under-Voltage Detection (BUV) Soft , Limitation Disable Protection if the Feedback and FOVP/BUV pins are not connected Thermal Shutdown · , Characteristics Maximum Power Dissipation @ TA = 70°C Thermal Resistance Junction-to-Air Operating Junction
ON Semiconductor
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Abstract: is a Pb-Free Device FOVP/BUV Feedback July, 2013 â' Rev. 3 pfcOK VCC DRV Vsense , '¢ Low Duty-cycle Operation if the Bypass Diode is and Bulk Under-voltage Detection (BUV) Soft , Current Limitation Disable Protection if the Feedback and FOVP/BUV pins are not connected Thermal , Dissipation and Thermal Characteristics Maximum Power Dissipation @ TA = 70°C Thermal Resistance , ELECTRICAL CHARACTERISTICS (Conditions: VCC = 15 V, TJ from â'40°C to +125°C, unless otherwise specified ON Semiconductor
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Abstract: â'¢ â'¢ â'¢ â'¢ â'¢ November, 2013 â' Rev. 1 Open Pin Protection for FB and FOVP/BUV Pins , HV Restart VCC DRV GND CS/ZCD PFCOK PSTimer FOVP/BUV VCC VControl DRV , Industries, LLC, 2013 = Specific Device Code = A, B, C or D = Assembly Location = Wafer Lot = Year = Work Week = Pbâ'Free Package ORDERING INFORMATION Adjustable Bulk Undervoltage Detection (BUV , FOVP/BUV VControl FFControl Fault STDBY NCP1615XG AWLYWW NCP1615XG AWLYWW See detailed ON Semiconductor
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NCP1615 NCP1615X NCP1615/D

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SA1281 In h a lts v e r z e ic h n is T a b le o f c o n te n ts S o m m a ire In d ic e In d ic e , L e x iq u e d e d o n n d e s E n c ic lo p e d ia d a ti V e r g le ic h s ta b e lle C o m p a r is o n ta b le T a b le d E q u iv a le n c e T a b la c o m p a ra tiv a T a b la c o m p a ra tiv a L e x ic o n d e d a to s A n s c h lu f i P in D e s s in s d e s D esegni E squem as z e ic h n u n g e n a s s ig n m e n ts ra c c o r d e m e n ts d i te r m in a l! d e c o n e x
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Transistor 2SA 2SB 2SC 2SD 2SA1281 2SK596 bup 3130 C3885A 2SC906 PA63H MPA68H BD241
Abstract: 1 NCP1615X X A WL Y WW G = Specific Device Code = A, B, C, C2, D or D2 = Assembly , '¢ â'¢ â'¢ â'¢ â'¢ Open Pin Protection for FB and FOVP/BUV Pins Internal Thermal Shutdown , 14 16 Adjustable Bulk Undervoltage Detection (BUV) Soft Overvoltage Protection Line Overvoltage Protection Overcurrent Protection HVFB FB Restart FOVP/BUV VControl FFControl Fault STDBY , PSTimer FOVP/BUV VCC VControl DRV FFControl GND Fault CS/ZCD STDBY NCP1615 ON Semiconductor
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Abstract: â'¢ â'¢ â'¢ â'¢ â'¢ October, 2013 â' Rev. 0 Open Pin Protection for FB and FOVP/BUV Pins , HV Restart VCC DRV GND CS/ZCD PFCOK PSTimer FOVP/BUV VCC VControl DRV , Industries, LLC, 2013 = Specific Device Code = A, B, C or D = Assembly Location = Wafer Lot = Year = Work Week = Pbâ'Free Package ORDERING INFORMATION Adjustable Bulk Undervoltage Detection (BUV , FOVP/BUV VControl FFControl Fault STDBY NCP1615XG AWLYWW NCP1615XG AWLYWW See detailed ON Semiconductor
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vhf uhf tuner

Abstract: vhf mixer oscillator ic PD Operating Temperature Range Topr Storage Temperature Range Tstg (TA=25°C) Unit V mW °C °C Ratings 7 *550 -20 to +75 -40 to +125 * Test IC soldered on PC board RECOMMENDED , Output flocal=55.25 to 801.25MHz Level Symbol Icc1 Icc2 Min. 4.5 (TA=25°C) Max. Unit 5.5 V Typ. 5.0 (Vcc=5V,TA=25°C, IF=45.75MHz) Min. Typ. Max. Unit 35 41 56 mA 37 43 58 , NJM2531A DC ELECTRICAL CHARACTERISTICS (VCC=Vosc=Vmix=5V,TA=25°C,UHF:Vb=2.97V,VHF:Vb=2.98V) Parameter
New Japan Radio
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SSOP16 NJM2531AV vhf uhf tuner vhf mixer oscillator ic HVU202A 1T363A

st smd diode marking code BUH

Abstract: diode smd marking BUF 0.41 0.006 0.087 0.016 E A1 A2 L b c E c 5.40 4.30 3.60 1.15 5.60 0.201 0.213 0.220 4.60 , (Tamb = 25°C) Symbol PPP P IFSM Tstg Tj TL Parameter Peak pulse power dissipation (see note 1) Power , = Tamb Tamb = 50° C tp = 10ms Tj initial = Tamb Value 600 5 100 - 65 to + 175 150 260 Unit W W A °C °C °C Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit , recommended pad layout Parameter Value 20 100 Unit °C/W °C/W August 2001- Ed: 3 1/6 SMBJxxxA-TR
STMicroelectronics
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st smd diode marking code BUH diode smd marking BUF diode smd marking Bva diode smd marking BBE diode smd marking BUj diode smd marking BUE SMBJ188A-TR DO-214AA

diode smd marking BUF

Abstract: marking CODE R SMD DIODE SMB J 36 CA low voltage supplied IC's. SMB (JEDEC DO-214AA) ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol , infinite heatsink Tamb = 50°C IFSM Non repetitive surge peak forward current for unidirectional , W 100 A - 65 to + 175 150 °C °C 260 °C Value Unit Note 1 : For a surge , Parameter Rth (j-l) Junction to leads 20 °C/W Rth (j-a) Junction to ambient on printed circuit on recommended pad layout 100 °C/W January 1998 Ed: 3 1/6 SMBJxxxA-TR, CA-TR
STMicroelectronics
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marking CODE R SMD DIODE SMB J 36 CA diode smd marking "BUF" smd diode code buh SMD CODE BUQ SMBJ SMBJ10CA-TR

st smd diode marking code BUH

Abstract: diode smd marking BUF -214AA) ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol PPP Parameter Value Peak pulse power dissipation (see note 1) Tj initial = Tamb Power dissipation on infinite heatsink Tamb = 50°C IFSM , for soldering during 10 s. P Unit 600 W 5 W 100 A - 65 to + 175 150 °C °C 260 °C Value Unit Note 1 : For a surge greater than the maximum values, the diode , leads 20 °C/W Rth (j-a) Junction to ambient on printed circuit on recommended pad layout
STMicroelectronics
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smd diode order marking code stmicroelectronics STMicroelectronics smd marking code marking bbz STMicroelectronics smd DIODE marking code st smd diode marking code BUZ diode SMBJ170A-TR

diode smd marking BUF

Abstract: smd diode code buh low voltage supplied IC's. SMB (JEDEC DO-214AA) ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol , dissipation on infinite heatsink Tamb = 50°C IFSM Non repetitive surge peak forward current for , 100 A - 65 to + 175 150 °C °C 260 °C Value Unit Note 1 : For a surge greater , Parameter Rth (j-l) Junction to leads 20 °C/W Rth (j-a) Junction to ambient on printed circuit on recommended pad layout 100 °C/W January 1998 Ed: 3 1/6 SMBJxxxA-TR, CA-TR
STMicroelectronics
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diode smd marking "BBE" smd code buz smb diode smd marking BBf smd code buh diode smd marking BUA diode smd marking "BUE"

OSC 25MHz

Abstract: uhf amp circuit diagrams PD Operating Temperature Range Topr Storage Temperature Range Tstg (TA=25°C) Unit V mW °C °C Ratings 7 550 -20 to +75 -40 to +125 RECOMMENDED OPERATING VOLTAGE RANGE Parameter , Symbol Icc1 Icc2 Min. 4.5 (TA=25°C) Max. Unit 5.5 V Typ. 5.0 (Vcc=5V,TA=25°C, IF , (VCC=Vosc=Vmix=5V,TA=25°C,UHF:Vb=2.97V,VHF:Vb=2.98V) Parameter Condition Symbol Min. Typ. Max. Pin3 , =2.98v,1-2PinShort Ivosc 4.60 Vsw=2v,Vb=2.97v,4-5PinShort Iuosc Pin4 Current 1.30 5.70 Pin13 Voltage Vsw
New Japan Radio
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OSC 25MHz uhf amp circuit diagrams vhf amplifier dc to ac convertion circuit diagram

st smd diode marking code BUH

Abstract: diode smd marking BUF -214AA) ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter Value Peak pulse power dissipation (see note 1) Tj initial = Tamb Power dissipation on infinite heatsink Tamb = 50°C IFSM Non , during 10 s. PPP P Unit 600 W 5 W 100 A - 65 to + 175 150 °C °C 260 °C Value Unit Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Parameter Rth (j-l) Junction to leads 20 °C/W
STMicroelectronics
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buk 154 smd diode smb marking code 31 BUV 460 C SMBJ15CATR st smd diode marking code BUL st smd diode marking code BUm

SMBJ5.0A DO214AA

Abstract: marking code BBW 4.30 4.60 0.159 0.169 0.181 D L 2.15 E1 b 1.90 E A2 Max. c , and 3 SMBJxxxCA-TR See pages 2 and 3 Absolute maximum ratings (Tamb = 25°C) Symbol Parameter Value Tj initial = Tamb Power dissipation on infinite heatsink Tamb = 50°C IFSM , power dissipation (1) PPP Unit °C Tj Maximum junction temperature 150 °C TL Maximum lead temperature for soldering during 10 s. 260 °C Value Unit 1. For a surge
STMicroelectronics
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SMBJ5.0A DO214AA marking code BBW SMBJ5.0A buz bbg "marking" diode st marking BBM code SMBJ5.0A

bbc ds diodes DS 1,8

Abstract: diode smd marking BUE S G S - ÏH O M S O N S M B J 5 .0 A -T R ,C A -T R [ M r e ® * S S M B J 1 8 8 A -T R ,C A -T R Å" @ [ E L [ iO TRANS ILâ"¢ FEATURES â  PEAK PULSE POWER: 600 W (10/1 , MAXIMUM RATINGS (Tamb = 25°C) Parameter Symbol Value Peak pulse power dissipation (see note 1) Tj initial â'"Tamb Power dissipation on infinite heatsink Tamb = 50°C Ifsm Non , ° c ° c Value Unit Note 1 : For a surge greater than the maximum values, the diode will
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bbc ds diodes DS 1,8 bbc ds diodes DS20-800 B
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