NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| BUT131 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan | |
| BUT131 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
Scan | |
| BUT131 | Philips Semiconductors / NXP Semiconductors | High Speed High Voltage Darlingtons / Transistors |
1 pages, |
Scan | |
| BUT131 | Philips Semiconductors / NXP Semiconductors | V(cesm): 850V, 80W, silicon diffused power transistor |
7 pages, |
Scan | |
| BUT131A | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan | |
| BUT131A | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
Scan | |
| BUT131A | Philips Semiconductors / NXP Semiconductors | V(cesm): 1000V, 80W, silicon diffused power transistor |
7 pages, |
Scan | |
| BUT131H | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan | |
| BUT131H | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
Scan | |
| BUT131H | Philips Semiconductors / NXP Semiconductors | High Speed High Voltage Darlingtons / Transistors |
1 pages, |
Scan | |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Collector-Emitter Voltage VBE= 0 VALUE BUT131 850 V 1000 450 BUT131A VEBO BUT131A BUT131 VCEO , isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUT131/A DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 450V(Min)- BUT131 500V(Min)- BUT131A ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching , Power Transistors BUT131/A ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL ... | Original |
2 pages, |
vce 500v NPN Transistor npn high voltage transistor 500v 8a BUT131A BUT131 vbe 10v, vce 500v NPN Transistor BUT131 abstract |
| Abstract: =0.2 A (BUT131A) IC = 1.5 A; I b = 0.15 A (BUT131H) VCEsat max. 1.0 V lc = 3A;lB = 0.4A(BUT131) lc = 3 A; lB = 0.4 A (BUT131A) VcEsat max. 2.5 V lc=3 A; lB =0.3 A (BUT131H) VßEsat max. 1.5 V DC , LU &¡ o 100 (A) 10 0.1 0.01 S \ BUT131 -BUT131H-BUT131A - 'P 10 fis 1 mi 6 10 100 , change without notica. [ [ OGlBflb? â-¡ â- BUT131 SERIES Jl N AMER PHILIPS/DISCRETE 5SE D SILICON , max. typ. BUT131 131A 850 450 1000 500 2.5 3.0 5.0 10 131H 850 V 450 V A A A 80 W 0.07 I 0.07 ... | OCR Scan |
7 pages, |
UT131 BUT131H BUT131A BUT131 131H BUT131 abstract |
| Abstract: IC= 1.5 A; lB = 0.2 A (BUT131) lC = 1-5 A; lB = 0.2 A (BUT131A) IC= 1.5A;IB = 0.15A(BUT131H) VCEsat max. 1.0 V lc = 3A;lB = 0.4A(BUT131) lc = 3 A; lg = 0,4 A (BUT131A) VcEsat max. , to change without notice. OGlflflb? â-¡ â- BUT131 SERIES X N AI1ER PHILIPS/DISCRETE 5SE D SILICON , Fall time (resistive load) VCESM VcEO VCEsat 'Csat ic 'CM Ptot tf BUT131 max. max. max. max. , 1988 347 11 N AMER PHILIPS/DISCRETE BUT131 SERIES 2SE D bbS3ci31 QDläöbfl S T-33-13 T-33-13 RATINGS ... | OCR Scan |
7 pages, |
L100 BUT131H BUT131A BUT131 131H BUT131 abstract |
| Abstract: 850V 450V 1.5Vat3A/0.5A BUT131 TO-220AB 5A 850V 450V 2.5V at 3A/0.4A *70nsat3A BUT131H 850V 450V 2.5V at 3A/0.3A BUT131A 1000V 500V 2.5V at 3A/0.4A . continued PHILIPS COMPONENTS Discrete ... | OCR Scan |
1 pages, |
BUV90F BUV90 BU826A ESM3045AV ESM4045AV BU826 ESM5045DV ESM6045AV 400v philips Power Diode 1000V power Diode 800V 5A BUX85F SOT93 Diode 400V 5A T-32-OI BU826 T-32-OI abstract |
| Abstract: /0.5A 40ns at 3A BUT131 BUT131H BUT131A TO-220AB 5A 850V 850V 1000V 450V 450V 500V 2.5V at 3A/0.4A 2.5V ... | OCR Scan |
1 pages, |
BUT11AF PHILIPS SEMICONDUCTOR ESM4045AV ESM4045DV BU826A ESM6045AV BU826 power Diode 800V 5A SOT93 2A 5A10 BUX86 1000v 3a transistor VCE 1000V ESM6045DV ESM3045DV BU826 abstract |
| Abstract: 86 N AMER PHILIPS/DISCRETE BSE D â- bbS3131 aOlbSbH 4 â- T-Ol-oX General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER NEAREST EQUIV. PG. NO. SMD EQUIV. SMD PKG. PG. NO. INDUSTRY PART NUMBER NEAREST EQUIV. PG. NO. : SMD EQUIV. SMD PKG. PG. Na 0105-50 BLU52 BLU52 47 1N321 1N321 BYW56 BYW56 22 0204-50 BLU52 BLU52 47 1N321A 1N321A BYW56 BYW56 22 0510-25 BLV97 BLV97 49 1N322 1N322 BYW56 BYW56 22 12F5 BYX99-300 BYX99-300 22 1N322A 1N322A BYW56 BYW56 22 12F5R 12F5R BYX99-300R BYX99-300R 22 1N323 1N323 BVW54 BVW54 22 12F10 12F10 BYX99-300 BYX99-300 22 1N323A 1N323A BYW54 BYW54 22 12 ... | OCR Scan |
68 pages, |
1N5006 bt804 600 by028-200 1N3754 by028 BT806 bt1490 BT13G mp8706 1N5004 BT808 BT1690 BLU52 1N321 BYW56 BLU52 abstract |
| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT131H DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 , INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT131H ELECTRICAL CHARACTERISTICS TC=25 ... | Original |
2 pages, |
BUT131H BUT131H abstract |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| BUT11A | BUT11A Buy | BUT131 Buy | North American Philips, Discrete Division | Direct | PowerBJT | NPN Silicon Transistor |
| BUT11A | BUT11A Buy | BUT131A Buy | Philips Semiconductors | Close | PowerBJT | NPN Silicon Transistor |
| BUT11A | BUT11A Buy | BUT131H Buy | North American Philips, Discrete Division | Direct | PowerBJT | NPN Silicon Transistor |
| KSC5027 | KSC5027 Buy | BUT131 Buy | Philips Semiconductors | Close | PowerBJT | NPN Silicon Transistor |
| Part | Similar Part | Notes |
| BUT131 Buy | BUT11 Buy | |
| BUT131 Buy | BUT18 Buy | |
| BUT131 Buy | BUV46 Buy | |
| BUT131A Buy | 2SC3050 Buy | |
| BUT131A Buy | BUT18A Buy | |
| BUT131A Buy | BUV46A Buy | |
| BUT131(H) Buy | BUT11/A Buy | |
| BUT131(H) Buy | BUT18/A Buy | |
| BUT131(H) Buy | BUV46/A Buy |