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Part : BUT12A Supplier : Fairchild Semiconductor Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : BUT12A Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 1,091 Best Price : $1.03 Price Each : $1.27
Part : BUT12A Supplier : Philips Semiconductors Manufacturer : Chip One Exchange Stock : 99 Best Price : - Price Each : -
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BUT12AF Datasheet

Part Manufacturer Description PDF Type
BUT12AF Philips Semiconductors Silicon diffused power transistors Original
BUT12AF Philips Semiconductors Silicon Diffused Power Transistor Original
BUT12AF Various Russian Datasheets Transistor Original
BUT12AF Wing Shing Computer Components SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) Original
BUT12AF N/A Shortform Data and Cross References (Misc Datasheets) Scan
BUT12AF N/A Shortform Data and Cross References (Misc Datasheets) Scan
BUT12AFI N/A Shortform Data and Cross References (Misc Datasheets) Scan

BUT12AF

Catalog Datasheet MFG & Type PDF Document Tags

but 12af

Abstract: transistor but12af emitter BUT12F; BUT12AF DESCRIPTION mounting base; electrically isolated from all pins MBBOOa , SYMBOL VcESM PARAMETER collector-emitter peak voltage BUT12F BUT12AF collector-emitter voltage BUT12F BUT12AF collector-emitter saturation voltage collector saturation current BUT12F BUT12AF collector current , BUT12F BUT12AF collector-emitter voltage BUT12F BUT12AF collector saturation current BUT12F BUT12AF II , BUT12F BUT 12AF collector-emitter saturation voltage BUT12F BUT12AF - VcEsat 1.5 1.5 V V -
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OCR Scan
but 12af transistor but12af BUT12

BUT12AF equivalent

Abstract: BUT12AF Inchange Semiconductor Product Specification BUT12F BUT12AF Silicon NPN Power Transistors , PARAMETER VCBO CONDITIONS DUC ICON BUT12F Collector-base voltage BUT12AF SEM E ANG , V 1000 Open base BUT12AF VEBO UNIT 850 Open emitter BUT12F VCEO TOR , from junction to ambient Inchange Semiconductor Product Specification BUT12F BUT12AF , saturation voltage 1.5 V IC=5A; IB=1A BUT12F V 1.5 BUT12AF IC=6A; IB
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Original
BUT12AF equivalent

BUT12AF equivalent

Abstract: transistor but12af DISCRETE SEMICONDUCTORS DATA SHEET BUT12F; BUT12AF Silicon diffused power transistors , DESCRIPTION BUT12F; BUT12AF PINNING High-voltage, high-speed, glass-passivated NPN power transistor , BUT12F V BUT12AF 1000 V BUT12F 400 V BUT12AF 450 V 1.5 V BUT12F 6 A BUT12AF VCEO 850 5 A collector-emitter voltage VCEsat , specification Silicon diffused power transistors BUT12F; BUT12AF THERMAL CHARACTERISTICS SYMBOL
Philips Semiconductors
Original
dk 57 MBB008 MBK109 SCA55

BUT12AF

Abstract: BUT12AF equivalent SavantIC Semiconductor Product Specification BUT12F BUT12AF Silicon NPN Power Transistors , Emitter-base voltage CONDITIONS BUT12F BUT12AF BUT12F BUT12AF Open emitter Open base Open , Product Specification BUT12F BUT12AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless , BUT12AF BUT12F UNIT IC=6A; IB=1.2A 1.5 1.5 BUT12AF V IC=5A; IB=1A BUT12F V IC=6A; IB=1.2A BUT12AF IC=5A; IB=1A BUT12F VCE=850V ;VBE=0 Tj=125 1.0 3.0 BUT12AF VCE
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Original
Abstract: N AI1ER PHILIPS/DISCRETE bTE J > 1,1,53=531 002fi42b DAT JJ U BUT12F BUT12AF L , systems, etc. Q U IC K R E F E R E N C E D A T A BUT12F BUT12AF Collector-emitter voltage peak , BUT12AF , b'lE D â  bbS3T31 ODEflME? Tib H A P X R A T IN G S Limiting values in accordance with the Absolute Maxim um System (IE C 134) BUT12F BUT12AF Collector-emitter voltage peak , bTE D â  Silicon diffused power transistors bbS3T31 QQafl4B6 TS2 I IAPX BUT12F BUT12AF -
OCR Scan
S3T31

BUT12AF

Abstract: A2A-4B N AMER PHILIPS/DISCRETE LIE T> m bbSB^l â¡02ä4Eb DÛT I BUT12F BUT12AF il u I IAPX , , etc. QUICK REFERENCE DATA Collector-emitter voltage BUT12F BUT12AF peak value; Vgg = 0 VCESM max ,   APX BUT12F BUT12AF j I RATINGS Limiting values in accordance with the Absolute Maximum System {I EC 134) BUT12F BUT12AF Collector-emitter voltage peak , power transistors J V BUT12F BUT12AF Saturation voltages BUT12F BUT12AF lc = 6 A; lB = 1.2
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OCR Scan
A2A-4B

BUT11AX

Abstract: TO-220AB BUT11AF BUT11AX BUW11AF BUT11A BUW11A BUT18A BUT12AF BUT12A BUW13AF BUW13A BU505DF BU505F BU505 BU505D
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OCR Scan
BU2506DF BU2506DX TO-220AB 220ab sot199 bu508df BUX86P BUX84F BUX84 BUW84 BUT211X BUT11F

BU25150X

Abstract: BU2508-AX BUT12A BUT12AF BUT 12AI BUT12F BUT12XI BUT18 BUT18A BUT18AF BUT18F BUT211 BUT211X BUW11F BUW11AF BUW11AW
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OCR Scan
BU1507AX BU1508AX BU1508DX BU25150X BU2532AW BU2708AF BU2508-AX BU2725DX BUS08D BU2708AX BU2708DX BU506 BU506D BU506DF BU506F BU508AF BU508AW

BUT12AF

Abstract: BUT12AF equivalent BUT12AF SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf TO-220F PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation
Wing Shing Computer Components
Original
transistor IC 12A

BUT11APX equivalent

Abstract: BUT11A1 L1 BUT18AF L1 L1 BUT12AF L1 L1 BU1706AB L1 Selection guide BUJ303AX
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Original
BU2527DX BUT11A1 BUT11APX BUT11APX equivalent equivalent BU2725DX BU2527 BU506D, BU1506DX, BU2506DF BU2507AF BU1507DX BU2507DF BU2507AX BU2507DX BU2508AF

BUT11A1

Abstract: Power Bipolar Transistors BUX85 BUT11A1 BUT11A BUJ303A BUJ304A BUT18A BUT12AI BUT12A BUJ403A BU1706A BUT12AF BUJ403AX BU1706AX
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OCR Scan
Power Bipolar Transistors BU2532 BU4506AF BU4506AX BU4506AZ BU4507AF S0T82 S0T78 T0220AB S0T186A S0T186 BU1506DX

SOT399

Abstract: BU2720DX BUT18A BUT12AF BUT12XI BUW12AF PACKAGE SOT82 SOT186 TO-220AB SOT82 SOT186A SOT186 SOT199 TO-220AB TO
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OCR Scan
BU2720AX BU2720DX SOT399 BU2515DX BUT11 BUW11W BUW12F BUW12W BUW13F BUW13W

BUT12

Abstract: BUT12A , halfpage handbook, halfpage Ptot max (%) IC (A) 80 5 40 BUT12F BUT12AF 0 0 0
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Original
MBK106 MGE246 MGE238

BU4508DX equivalent

Abstract: ST1803DHI equivalent "BUJ204A, BUJ304A" BUT12AF PHILIPS "BUJ204AX, BUJ304AX" BUT12AX PHILIPS "BUJ204AX
Philips Semiconductors
Original
BU4508DX BU4508DX equivalent ST1803DHI equivalent ST2001HI equivalent 2SC5296 equivalent BU508DF equivalent 2SC4589 BU4525AF 2SC4692 BU4530AL 2SC4742 BU2508DW

BUT12

Abstract: BUT12AF , halfpage handbook, halfpage Ptot max (%) IC (A) 80 5 40 BUT12F BUT12AF 0 0 0
Philips Semiconductors
Original

BUT12

Abstract: BUT12AF equivalent , halfpage handbook, halfpage Ptot max (%) IC (A) 80 5 40 BUT12F BUT12AF 0 0 0
Philips Semiconductors
Original

FET BFW10

Abstract: KP101A * BUS131* BUS132* BUS133* BUT11 BUT11A BUT11F BUT11AF BUT12 BUT12A BUT12F BUT12AF BUT18 BUT18A BUT18F
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OCR Scan
BA583 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BA220 BA221 BA223 BA281 BA314 BA315

Philips TdA3619

Abstract: on4408 BUT12A BUT12AI BUJ403A BUJ403B BUT11AF BUT11AX BUJ303AX BUJ304AX BUT18AF BUT12AF
Philips Semiconductors
Original
Philips TdA3619 on4408 tda3619 on4827 TDA5247HT on4785 1N4001G 1N4002G 1N4002ID 1N4003G 1N4003ID 1N4004G

BU4508DX equivalent

Abstract: BUT11APX equivalent BUT18AF BUT12AF BUJ403BX BU1706AB 2 1/2 1/2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
Philips Semiconductors
Original
S0806MH P0201MA TO92 BT136 application note BU2508Dx equivalent ct 2A05 diode diode cross reference BYW96E FIN-02630 BP317 D-20097 H-1119 254-D BT148-600R

BU4508DX equivalent

Abstract: BUT11APX equivalent L1 BUT18AF L1 L1 BUT12AF L1 L1 BU1706AB L1 Selection guide BUJ303AX
Philips Semiconductors
Original
2SD1876 2Sd1651 equivalent BYS21-45 2SD1878 data sheet smd zener diode color band BT151-600R BT148-400R BSH203 BSH201 BT132-600D BT134W-600D BT134W-600E
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