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PVX012 GE Critical Power Analog 3.0 - 14.4V 0.60 - 5.5V 12A 95% visit GE Critical Power
PDT012 GE Critical Power Digital PMBus 3.0 - 14.4V 0.45 - 5.5V 12A 96% visit GE Critical Power
ULDT012A0X3-SRZ GE Critical Power 12A Digital SlimLynxTM: Non-Isolated DC-DC Power Module, 3Vdc –14.4Vdc input; 0.45Vdc to 5.5Vdc output; 12A Output Current visit GE Critical Power
ULDT012A0X43-SRZ GE Critical Power 12A Digital SlimLynxTM: Non-Isolated DC-DC Power Module, 3Vdc –14.4Vdc input; 0.45Vdc to 5.5Vdc output; 12A Output Current visit GE Critical Power
APTH012A0X43-SRZ GE Critical Power MicroTLynxTM 12A: Non-Isolated DC-DC Power Module, 2.4Vdc –5.5Vdc input; 0.6Vdc to 3.63Vdc output; 12A Output Current visit GE Critical Power
APTS012A0X43-SRZ GE Critical Power 12V MicroTLynxTM 12A: Non-Isolated DC-DC Power Module, 4.5Vdc –14Vdc input; 0.69Vdc to 5.5Vdc output; 12A Output Current visit GE Critical Power

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Part : BUT12A Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 1,091 Best Price : $1.27 Price Each : $1.27
Part : BUT12A Supplier : Fairchild Semiconductor Manufacturer : ComSIT Stock : 210 Best Price : - Price Each : -
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BUT12/12A

Catalog Datasheet MFG & Type PDF Document Tags

BUT12

Abstract: BUT12A BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2 , BUT12/12A Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 ­0.05 , VCBO Value Units : BUT12 : BUT12A VCEO Parameter 850 1000 V V Collector-Emitter Voltage : BUT12 : BUT12A 400 450 V V Collector-Base Voltage IC Collector , Saturation Voltage IC = 6A, IB = 1.2A 1.5 VBE(sat) * Base-Emitter Saturation Voltage IC = 6A
Fairchild Semiconductor
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BUT12/12A

BUT12

Abstract: BUT12A BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2 , VCBO Value Units : BUT12 : BUT12A VCEO Parameter 850 1000 V V Collector-Emitter Voltage : BUT12 : BUT12A 400 450 V V Collector-Base Voltage IC Collector , Saturation Voltage IC = 6A, IB = 1.2A 1.5 VBE(sat) * Base-Emitter Saturation Voltage IC = 6A, IB = 1.2A 1.5 V tON Turn On Time 1 µs tSTG Storage Time 4 µs tF
Fairchild Semiconductor
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BUT12

Abstract: BUT12/12A BUT12/12A High Voltage Power Switching Applications 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage : BUT12 : BUT12A VCEO Collector-Emitter Voltage : BUT12 : BUT12A Collector , = 1.5% ©2000 Fairchild Semiconductor International Rev. A, February 2000 BUT12/12A , 9V, IC = 0 IC = 6A, IB = 1.2A IC = 6A, IB = 1.2A VCC = 250V, IC = 6A IB1 = - IB2 = 1.2A RL = 41.6 Min
Fairchild Semiconductor
Original
54TYP

but12 transistor

Abstract: BUT12/12A HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage BUT12 BUT12A Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation ( Tc=25'C) Junction Temperature Storage Temperature V ceo NPN SILICON TRANSISTOR Symbol BUT12 BUT12A VcES Rating 850 1000 400 450 8 20 4 100 150 -65 , = 1.2A lc = 6A, lB= 1.2A Vcc = 250V, le = 6A l01 = - l B 2 = 1.2A 495 ELECTRONICS
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but12 transistor
Abstract: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol BUT12 Rating Unit 850 V 1000 V 400 V 450 V V ceS BU T12A C ollecto r E m itter Voltage BUT12 V cE O , = 1.2A 1.5 V * Base E m itter S aturation Voltage VBE(sat) lc = 6A, lB= 1.2A 1.5 V toN V cc = 250V, lc = 6A 1 US S torage Tim e ts T G IB1 = - lB2 = 1-2A 4 US -
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BUT12A

Abstract: PC100-W BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Col lector Base Voltage : BUT12 Vces 850 V : BUT12A 1000 V Collector Emitter Voltage : BUT12 VcEO 400 V : BUT12A 450 V Collector Current (DC) lc 8 A Collector , Iebo Vbe=9V, lc= 0 10 mA * Collector- Emitter Saturation Voltage VcE(sat) lc = 6A, lB= 1.2A 1.5 V * Base Emitter Saturation Voltage VBE(sat) lc = 6A, lB= 1.2A 1.5 V Turn On Time toN Vcc = 250V, lc =
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PC100-W
Abstract: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Collector-Base Voltage : BUT 12 : BUT12A Collector Emitter Voltage : BUT12 : BUT 1 2A Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Rating Unit 850 1000 V V 400 450 8 20 4 100 175 -6 5 ~ 1 7 5 V V A A A W °C "C Symbol VcES VcEO lc -
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pt 4115 led driver

Abstract: an7527 BUT12/12A BUT12/12A High Voltage Power Switching Applications 1 TO-220 2.Collector 3 , = 1.5% ©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001 BUT12/12A Package , VCBO Parameter Collector-Base Voltage : BUT12 : BUT12A VCEO Collector-Emitter Voltage : BUT12 : BUT12A , 9V, IC = 0 IC = 6A, IB = 1.2A IC = 6A, IB = 1.2A VCC = 250V, IC = 6A IB1 = - IB2 = 1.2A RL = 41.6 Min , products >> find products space space space BUT12 Related Links Products groups NPN Silicon Transistor
Fairchild Semiconductor
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pt 4115 led driver an7527 AN-7527 AN-7501 an5043 AN-7502 AN-822 AN-881 AN-889 AN-9007 AN-7001 MS-549

TRANSISTOR but12

Abstract: Converters · Inverters · Switching regulators · Motor control systems. BUT12; BUT12A F o i MBB008 3 , MBK106 Fig.1 Simplified outline (TO-22QAB) and symbol. QUICK REFERENCE DATA SYMBOL VcESM BUT12 BUT12A VcEO collector-emitter voltage BUT12 BUT12A VcEsat icsat collector-emitter saturation voltage collector saturation current BUT12 BUT12A lc ¡CM Plot tf collector current (DC) collector current (peak , transistors BUT 12; BUT 12A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC
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TRANSISTOR but12

BUT12A

Abstract: collector; connected to mounting base emitter BUT12; BUT12A QUICK REFERENCE DATA SYMBOL VcESM BUT12 BUT12A VCEO collector-emitter voltage BUT12 BUT12A VcEsat Icsat collector-emitter saturation voltage collector saturation current BUT12 BUT12A ·c ICM Plot tf collector current (DC) collector current (peak , voltage BUT12 BUT12A collector-emitter voltage BUT12 BUT12A collector saturation current BUT12 BUT12A , transistors CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VcEOsust BUT 12; BUT 12A
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T0-220AB MBC096

BUT12A

Abstract: BUT12 . MAX 400 V IC=0.1A; IB=0, L=25mH 450 BUT12A BUT12 UNIT IC=6A; IB=1.2A 1.5 1.5 BUT12A IC=6A; IB=1.2A BUT12A V IC=5A; IB=1A BUT12 V IC=5A; IB=1A ICES , For BUT12 IC=6A; IB1=- IB2=1.2A µs 0.8 µs SavantIC Semiconductor Product , SavantIC Semiconductor Product Specification BUT12 BUT12A Silicon NPN Power Transistors , CONDITIONS BUT12 BUT12A BUT12 BUT12A Open emitter Open base Open collector VALUE 850 1000
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BUT12

Abstract: PC based dc motor speed control isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT12 , Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT12 ELECTRICAL , ) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.5 V ICES Collector Cutoff Current VCE=RatedVCES ;VBE= 0 , Time tf Fall Time 1.0 Turn-on Time isc Websitewww.iscsemi.cn IC= 6A; IB1= -IB2=1.2A
INCHANGE Semiconductor
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PC based dc motor speed control

BUT12

Abstract: BUT12/12 A HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Collector Emitter Voltage : BUT12 : B UT12A Collector Current (DC) Collector Current , NPN SILICON TRANSISTOR Symbol : BUT12 : B UT12A VcEO Rating 850 1000 400 450 8 20 4 100 150 -65 , mA mA V V \is \is \is VBE= 0 = 9V, lc = 0 V c E (s a t) lc= 6A , lB=1.2A lc =6A , lB= 1 2A Vcc = 250V, lc = 6A IB1 = - I b2 = 1.2A VB E(sat) toN ts T G tF Rev. B FAIRCHILD S E M
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BUT12/12

NPN Transistor TO220 vcc 150V

Abstract: transistor IC 12A SILICON DIFFUSED POWER TRANSISTOR BUT12 GENERAL DESCRIPTION Highvoltage,high-speed switching , Diode forward voltage Fall time CONDITIONS VBE = 0V MIN Tmb 25 IC = 6.0A; IB = 1.2A f = 16KHz IC=6A,IB1=-IB2=1.2A,VCC=150V MAX 850 400 8 20 100 1.5 1.0 UNIT V V A A W V , VCESMmax Tj = 125 IB = 0A; IC = 100mA L = 25mH IC = 6.0A; IB = 1.2A IC = 6.0A; IB = 1.2A IC = 1.0A , =6A,IB1=-IB2=1.2A,VCC=150V Turn-off storage time Turn-off fall time IC=6A,IB1=-IB2=1.2A,VCC=150V Wing
Wing Shing Computer Components
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NPN Transistor TO220 vcc 150V transistor IC 12A

BUT12

Abstract: BUT12A DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product , Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A , peak voltage MAX. UNIT VBE = 0 BUT12 V 1000 V BUT12 400 V BUT12A 450 V 1.5 V BUT12 6 A BUT12A VCEO 850 BUT12A 5 A 8 A , diffused power transistors BUT12; BUT12A LIMITING VALUES In accordance with the Absolute Maximum
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BUT12AF BUT12F MGE246 MGE238

BUT12A

Abstract: BUT12 DISCRETE SEMICONDUCTORS QMTÃ" S^EET BUT12; BUT12A Silicon diffused power transistors Product , specification Silicon diffused power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed , DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT VcESM collector-emitter peak voltage VBE = 0 BUT12 850 V BUT12A 1000 V VcEO collector-emitter voltage open base BUT12 400 V BUT12A 450 V VcEsat collector-emitter saturation voltage see Fig.8 1.5 V Icsat collector saturation current BUT12 6 A BUT12A 5 A
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buw13a philips semiconductor

Abstract: 180NS BUT18F SOT-186 6A 850V 400V 1.5 V at 4A/0.8A 180ns at 4A BUT18AF (F-PAK) ' 1000V 450V BUT12 TO-220AB 8A 850V 400V 1.5V at 6A/1.2A 80ns at 6A BUT12A 1000V 450V 1.5Vat5A/1A 80ns at 5A BUW12 SOT-93 8A 850V 400V 1.5V at 6A/1.2A 80ns at 6A BUW12A 1000V 450V 1.5Vat5A/1A 80ns at 5A BUS12 TO-3 8A 850V 400V 1.5V at 6A/1.2A 80ns at 6A BUS12A 1000V 450V 1.5Vat5A/1A 80ns at 5A BUW132 SOT-93 8A 850V 450V , 6A BUS22B 750V 400V 1.5V at 6 A/0.8 A BUS22C 850V 450V 1.5Vat6A/1A MJE13008 TO-220AB 12A
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BUT18 BUT18A BUW13A BUS13 buw13a philips semiconductor 180NS at16a Bus23c S3T31 BUW132H BUW132A BUT22A

L25-M

Abstract: BUT12 BUT12/12 A HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic C ollector-Base Voltage B U T12 NPN SILICON TRANSISTOR TO-220 Symbol VcES Rating 850 1000 Unit V V V V A A A W °C . B U T 12 A i C ollector Em itter Voltage : B U T 12 : BUT 1 2AJ Veto lc lc Ib 400 450 8 20 4 100 175 -6 5 ^ 1 7 5 ! C ollector C urrent (DC) C ollector C urrent , = 1 .2 A lc = 6A . le1 = l B2 = 1.2A mA mA V V mS VCE(sat) VBE(sat) ton ts fiS tf d uty
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L25-M l25m BUT 1
Abstract: ) 6A BUT12 BUT12A T O -220AB BUW12 BUW 12A BUS12 BUS12A T Y P E NO. BUT18 BUT18A , 180ns at 4A 8A 850V 1000V 400V 450V 1,5V at 6A/1.2A 1.5V at 5A/1A 80ns at 6A 80ns a t 5A SOT-93 8A 850V 1000V 400V 450V 1.5V at 6A/1.2A 1 .5 V a t5 A /1 A 80ns at 6A 80ns at 5A TO-3 8A 850V 1000V 400V 450V 1.5V at 6A/1.2A 1 .5 V a t5 A /1 A 80ns at , at 6A/0.8A 1.5V at 6A /1A 40ns at 6A TO-220AB 12A 600V 700V 300V 400V 1 .5 V a -
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BUT22B BUT22C JE13006 JE13007 BUP22A

BU2506DF

Abstract: 5A 800V .) Type No. BUT12 BUT12A BUW 12 BUW 12A BUW 12AF Package Outline TO-220AB SOT-93 SOT-199 SOT-186A SOT , 400V 450V 400V 450V 450V 850V 400V 450V 450V 450V max. at Iq/I b 1.5V at 6A/1.2A 1.5V at 5A/1 A 1.5V at 6A/1.2A 1.5V at 5A/1 A 1.5V at 5A 1V at 25A/0.5A 1.5V at 10A/2A 1.5V at 8A/1.5A 1.5V at 20A/4A , at at at at 6A 6A 6A 6A 2.5A 3A 3A 3A 3A 5A 5A 6A 8A 8A 8A 8A 8A 8A 8A 8A 8A 10A 10A 10A 10A 12A 12A 5V at 8A 5V at 8A 0.2|xs at 8A 0.2n.s at 8A Philips Components Discrete Sem iconductor
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BU2506DF 5A 800V BU508 1500v t199 02xs BUI708X BUV98V BUV298AV BU505 BU506 BU506D
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