BUK7907-55ATE M3D745 MBL317 MBL263 SNW-SQ-650A

TrenchPLUS standard level FET Rev. 01 - 24 January 2002 Product data M3D745 1. Description N-channel enhancement mode

BUK7907-55ATE BUK7907-55ATE TrenchPLUS standard level FET Rev. 01 - 24 January 2002 Product data M3D745 M3D745 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on state resistance, and TrenchPLUS diodes for Electrostatic Discharge (ESD) and temperature sensing. Product availability: BUK7907-55ATE BUK7907-55ATE in SOT263B. 2. Features s s s s Typical on-state resistance 5.8 m Q101 compliant ESD protection Monolithically integrated temperature sensor for overload protection. 3. Applications s Automotive and power switching: x 12 V and 24 V high power motor drives, e.g. Electrical Power Assisted Steering (EPAS) x Protected drive for lamps. 4. Pinning information Table 1: Pinning - SOT263B simplified outline and symbol Pin Description 1 gate (g) 2 anode (a) 3 drain (d) 4 cathode (k) 5 source (s) mb mounting base; connected to drain (d) Simplified outline Symbol d mb a s k g MBL317 MBL317 1 5 MBL263 MBL263 SOT263B BUK7907-55ATE BUK7907-55ATE Philips Semiconductors TrenchPLUS standard level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj = 25 °C - 55 V ID drain current (DC) Tmb = 25 °C; VGS = 10 V - 140 A Tmb = 25 °C - 272 W - 175 °C 5.8 7 m Ptot total power dissipation Tj junction temperature RDSon drain-source on-state resistance VGS = 10 V; ID = 50 A Tj = 25 °C - 14 m VF temperature sense diode forward voltage Tj = 25 °C; IF = 250 µA Tj = 175 °C 658 668 mV SF temperature coefficient temperature sense diode -55°C < Tj