BUK71/7907-55AIE BUK7107-55AIE BUK7907-55AIE MBK127 MBL368 MBL263 MSD058

TrenchPLUS standard level FET Rev. 01 - 12 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode

BUK71/7907-55AIE BUK71/7907-55AIE TrenchPLUS standard level FET Rev. 01 - 12 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. Product availability: BUK7107-55AIE BUK7107-55AIE in SOT426 (D2-PAK) BUK7907-55AIE BUK7907-55AIE in SOT263B (TO-220AB). 1.2 Features s Integrated current sensor s ESD protection s Q101 compliant s Standard level compatible. 1.3 Applications s Variable Valve Timing for engines s Electrical Power Assisted Steering. 1.4 Quick reference data s VDS 55 V s ID 140 A s RDSon = 5.8 m (typ) s ID/Isense = 500 (typ). 2. Pinning information Table 1: Pinning - SOT426 and SOT263B, simplified outline and symbol Pin Description 1 gate (g) 2 Isense 3 drain (d) 4 Kelvin source 5 source (s) mb mounting base; connected to drain (d) Simplified outline Symbol d mb mb g 1 2 3 4 5 Front view SOT426 (D2-PAK) MBK127 MBK127 MBL368 MBL368 1 5 MBL263 MBL263 SOT263B (TO-220AB) Isense s Kelvin source BUK71/7907-55AIE BUK71/7907-55AIE Philips Semiconductors TrenchPLUS standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) VDGS drain-gate voltage (DC) VGS gate-source voltage (DC) ID Conditions drain current (DC) Min Unit - 55 V - IDG = 250 µA Max 55 V - ±20 V Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 [1] - 140 A [2] - 75 A Tmb = 100 °C; VGS = 10 V; Figure 2 [2] - 75 A IDM peak drain current Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 - 560 A Ptot total power dissipation Tmb = 25 °C; Figure 1 - 272 W IGS(CL) gate-source clamping current continuous - 10 mA - 50 mA Tstg storage temperature -55 +175 °C Tj junction temperature -55 +175 °C [1] - 140 A [2] - 75 A Tmb = 25 °C; pulsed; tp 10 µs - 560 A unclamped inductive load; ID = 68 A; VDS 55 V; VGS = 10 V; RGS = 50 ; starting Tj = 25 °C - 460 mJ 6 kV tp = 5 ms; = 0.01 Source-drain diode Tmb = 25 °C reverse drain current IDR IDRM peak reverse drain current Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Electrostatic Discharge Vesd [1] [2] electrostatic discharge voltage; all pins Human Body Model; C = 100 pF; R = 1.5 k Current is limited by power dissipation chip rating Continuous current is limited by package. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09877 Product data Rev. 01 - 12 August 2002 2 of 15 BUK71/7907-55AIE BUK71/7907-55AIE Philips Semiconductors TrenchPLUS standard level FET 03na19 120 03ni63 160 ID (A) Pder (%) 120 80 80 40 Capped at 75A due to package 40 0 0 0 50 100 150 0 200 Tmb (°C) P tot P der = - × 100% P ° 50 100 150 200 Tmb (°C) VGS 10 V tot ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 03nf55 103 ID (A) Limit RDSon = VDS/ID tp = 10 µs 102 100 µs Capped at 75 A due to package 1 ms DC 10 ms 10 100 ms 1 1 102 10 VDS (V) Tmb = 25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09877 Product data Rev. 01 - 12 August 2002 3 of 15 BUK71/7907-55AIE BUK71/7907-55AIE Philips Semiconductors TrenchPLUS standard level FET 4. Thermal characteristics Table 3: Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to ambient Min Typ Max Unit SOT263B vertical in still air - 60 - K/W SOT426 Rth(j-mb) Conditions minimum footprint; mounted on a PCB - 50 - K/W Figure 4 - - 0.55 K/W thermal resistance from junction to mounting base 4.1 Transient thermal impedance 03ni29 1 Z th(j-mb) (K/W) = 0.5 10-1 0.2 0.1 0.05 10-2 0.02 = P tp T single shot t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09877 Product data Rev. 01 - 12 August 2002 4 of 15 BUK71/7907-55AIE BUK71/7907-55AIE Philips Semiconductors TrenchPLUS standard level FET 5. Characteristics Table 4: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V VGS(th) Tj = 25°C 55 - - V Tj = -55 °C 50 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25°C 4 V - - V - - 4.4 V Tj = 25°C - 0.1 10 µA Tj = 175 °C - - 250 µA 20 22 - V Tj = 25 °C - 22 1000 nA Tj = 175 °C - - 10 µA Tj = 25°C - 5.8 7 m Tj = 175 °C drain-source leakage current 3 1 Tj = -55 °C IDSS 2 Tj = 175 °C - - 14 m 450 500 550 - 116 - nC VDS = 55 V; VGS = 0 V V(BR)GSS gate-source breakdown voltage IG = ±1 mA; -55°C < Tj 10 V; current -55°C < Tj