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Part : BUJ302AX,127 Supplier : WeEn Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.2410 Price Each : $0.2703
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Part : BUJ302AX127 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 2,976 Best Price : $0.29 Price Each : $0.36
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Part : BUJ302AX,127 Supplier : WeEn Semiconductor Manufacturer : Chip1Stop Stock : 200 Best Price : $0.3450 Price Each : $0.5110
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BUJ302AX Datasheet

Part Manufacturer Description PDF Type
BUJ302AX Philips Semiconductors Silicon Diffused Power Transistor Original
BUJ302AX,127 NXP Semiconductors BUJ302AX - NPN power transistor, SOT186A Package, Standard Marking, Horizontal, Rail Pack Original

BUJ302AX

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: TO -2 20F BUJ302AX NPN power transistor Rev. 02 â'" 28 March 2011 Product data sheet , current gain BUJ302AX NXP Semiconductors NPN power transistor 2. Pinning information Table 2 , Name Version TO-220F BUJ302AX Description plastic single-ended package; isolated heatsink , temperature - 150 ° C VEBO emitter-base voltage - 24 V BUJ302AX Product data , . All rights reserved. 2 of 13 BUJ302AX NXP Semiconductors NPN power transistor 003aag027 NXP Semiconductors
Original
Abstract: TO -2 20F BUJ302AX NPN power transistor Rev. 02 - 28 March 2011 Product data sheet , Static characteristics hFE DC current gain BUJ302AX NXP Semiconductors NPN power transistor , . Ordering information Type number Package Name Version TO-220F BUJ302AX Description , emitter-base voltage - 24 V BUJ302AX Product data sheet IC = 0 A; IE = 2 A; tp < 10 ms All , B.V. 2011. All rights reserved. 2 of 13 BUJ302AX NXP Semiconductors NPN power transistor NXP Semiconductors
Original
Abstract: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ302AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a , specification Silicon Diffused Power T ransistor BUJ302AX ISOLATION LIMITING VALUE & CHARACTERISTIC Th , Philips Semiconductors Objective specification Silicon Diffused Power T ransistor BUJ302AX , T ransistor BUJ302AX DEFINITIONS Data sheet status Objective specification Preliminary -
OCR Scan
PINNING-SOT186A
Abstract: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ302AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a , Diffused Power Transistor BUJ302AX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 °C unless , Transistor BUJ302AX MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 , Silicon Diffused Power Transistor BUJ302AX DEFINITIONS Data sheet status Objective specification Philips Semiconductors
Original
Abstract: * BUJ105A PHE13007 BUJ106A PHE13009 BUJD203A* BUJ303A BUJ302A BUJ303B BUJ403A BUJD203AX* BUJ303AX BUJ302AX NXP Semiconductors
Original
TRANSISTOR bt134 BUJ100 transistor BT137 bt151 transistor bt139 SOT186A package MAC97A6 MAC97A8 BT1306-D BT1308-D Z00607MA BT131