BUH315D ISOWATT218 E81734 P025C/A

® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY

BUH315D BUH315D ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 ISOWATT218 PACKAGE (U.L. FILE # E81734 E81734 (N) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE. 3 APPLICATIONS s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BUH315D BUH315D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. 2 1 ISOWATT218 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V CBO Collector-Base Voltage (IE = 0) 1500 V V CEO Collector-Emitter Voltage (I B = 0) 700 V V EBO Emitt er-Base Voltage (I C = 0) 10 V 6 A IC I CM IB Parameter Collector Current Collector Peak Current (tp < 5 ms) I BM Base Peak Current (t p < 5 ms) P t ot Total Dissipation at T c = 25 C T stg St orage Temperature Tj August 2001 o Max. Operating Junction T emperature 12 A 3 Base Current A 5 A 44 W -65 to 150 o C 150 o C 1/7 BUH315D BUH315D THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 2.8 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it 200 µA 300 mA I CES Collector Cut-off Current (V BE = 0) V CE = 1500 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CE(sat ) Collector-Emitter Saturation Voltage IC = 3 A IB = 1 A 1.5 V V BE(s at) Base-Emitter Saturation Voltage IC = 3 A IB = 1 A 1.5 V DC Current G ain IC = 3 A IC = 3 A hFE 110 VCE = 5 V VCE = 5 V o T j = 100 C ts tf RESISTIVE LO AD Storage Time Fall Time V CC = 400 V I B1 = 1 A ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 3 A f = 15625 Hz L C = 1.3 mH I B(e nd) = 0.67 A Lbb(o ff ) = 8 µH C snub = 9.1 nF V CC = 150 V V BE(of f) = -4V Duty Cycle =40% VF Diode F orward Voltage 4 2.5 IC = 3 A I B2 = -1.5 A IF = 3 A 2/7 Thermal Impedance 1.8 200 2.7 300 µs ns 2.5 400 6 500 µs ns 2.5 Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 9 V BUH315D BUH315D Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Power Losses at 16 KHz Switching Time Inductive Load at 16KHz (see figure 2) 3/7 BUH315D BUH315D Switching Time Resistive Load at 16 KHz BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided to turn off the power transistor (retrace phase). Most of the dissipation, in the deflection application, occurs at switch-off. Therefore it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB2 at 16 KHz scanning frequencies the optimum negative drive. The test circuit is illustrated in fig. 1. 4/7 Inductance L1 serves to control the slope of the negative base current IB2 to recombine the excess carrier in the collector when base current is still present, this would avoid any tailing phenomenon in the collector current. The values of L and C are calculated from the following equations: 1 1 L (IC)2 = C (VCEfly)2 2 2 1 = 2 f = C L Where IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace. BUH315D BUH315D Figure 1: Inductive Load Switching Test Circuits. Figure 2: Switching Waveforms in a Deflection Circuit 5/7 BUH315D BUH315D ISOWATT218 ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 mm TYP. MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 3.7 0.138 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended 0.8 Nm; Maximum: 1 Nm : - The side of the dissipator must be flat within 80 µm 6/7 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.146 P025C/A P025C/A BUH315D BUH315D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7