BUF410 P025A - Datasheet Archive

® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY

BUF410 BUF410 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: s SWITCH MODE POWER SUPPLIES s MOTOR CONTROL DESCRIPTION The BUF410 BUF410 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications. 3 2 1 TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Un it V CEV Collector-Emitter Voltage (VBE = -1.5 V) 850 V V CEO Collector-Emitter Voltage (IB = 0) 450 V VEBO Emitter-Base Voltage (IC = 0) 7 V Collector Current 15 A Collector Peak Current (tp < 5 ms) 30 A Base Current 3 A IC I CM IB I BM Base Peak Current (tp < 5 ms) P tot T otal Dissipation at Tc = 25 C T s tg Storage Temperature Tj March 2002 o Max O peration Junction Temperature 4.5 A 125 W -65 to 150 o C 150 o C 1/6 BUF410 BUF410 THERMAL DATA R t hj-ca se Thermal Resistance Junction-Case Max o 1 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO Parameter V CE = 850 V V CE = 850 V V CE = 850 V V CE = 850 V V EB = 5 V V CE(sat ) V BE(s at) di c /dt V CE (3µs) V CE (5µs) I C = 200 mA L = 25 mH Collector-Emitter Saturation Voltage IC IC IC IC =5 A =5 A =10 A =10 A IB IB IB IB = = = = 0.5 A 0.5 A 2 A 2 A IC IC IC IC =5 A =5 A =10 A =10 A IB IB IB IB = = = = 0.5 A 0.5 A 2 A 2 A Collector-Emitter Dynamic Voltage Collector-Emitter Dynamic Voltage V 0.8 2.8 0.5 T C =100 o C 2 0.9 o 1.5 T C =100 C 1.1 o T C =100 C V CC = 300 V R C = 0 I B1 = 0.75 A I B1 = 0.75 A I B1 = 3 A tp = 3 µs o TC =25 C TC =100 o C o TC =100 C V CC = 300 V I B1 = 0.75 A I B1 = 0.75 A 1.5 R C = 60 TC =25 o C o TC =100 C V CC = 300 V I B1 = 0.75 A I B1 = 0.75 A 60 INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime IC = 5 A V BB = - 5 V V c la mp = 400 V L = 0.5 mH 2.1 IC = 5 A V BB = - 5 V V c la mp = 400 V L = 0.5 mH IC = 5 A V BB = - 5 V I B1 = 0.5 A T C = 125 oC VCC = 50 V R BB = 1.2 L = 0.5 mH INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime IC = 5 A V BB = 0 V c la mp = 400 V L = 0.5 mH V CC = 50 V R BB = 0.3 IB1 = 0.5 A ts tf tc V V 4 V V 1.1 V CC = 50 V R BB = 1.2 IB1 = 0.5 A o T C =100 C Maximum Collector Emitter Voltage without Snubber V V V V 8 V CC = 50 V R BB = 1.2 IB1 = 0.5 A INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime V V V V A/µs A/µs A/µs 45 100 R C = 60 o T C =25 C o T C =100 C ts tf tc 2/6 V T C =100 o C ts tf tc V CEW mA 450 I E = 50 mA Rate of rise on-state Collector Current mA mA 7 Emitter Base Voltage (I C = 0) Base-Emitter Saturation Voltage mA mA 0.2 1 o Un it 0.2 1 T C =100 C Emitter Cut-off Current (I C = 0) Typ . T C = 100 o C Collector Cut-off Current (V BE = -1.5 V) Min. Max. 1 Collector Cut-off Current (R BE = 10 ) V CEO(sus ) Collector-Emitter Sustaining Voltage (I B = 0) V EBO Test Cond ition s µs µs µs 0.8 0.05 0.08 1.8 0.1 0.18 500 µs µs µs V 1.5 0.04 0.07 µs µs µs BUF410 BUF410 ELECTRICAL CHARACTERISTICS (continued) Symb ol Parameter Test Cond ition s INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime IC = 5 A V BB = 0 V c la mp = 400 V L = 0.5 mH IC = 5 A V BB = 0 I B1 = 0.5 A T C = 125 oC V CC = 50 V R BB = 0.3 L = 0.5 mH ts tf tc INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime I C = 10 A V BB = -5 V V c la mp = 400 V L = 0.25 mH ts tf tc INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime I C = 10 A V BB = - 5 V V c la mp = 400 V L = 0.25 mH V CC = 50 V R BB =1.2 IB1 = 2 A TC =100 o C Maximum Collector Emitter Voltage without Snubber I CW off = 15 A V BB = - 5 V L = 0.1 mH o T C =125 C V CC = 50 V R BB = 1.2 I B1 = 3 A ts tf tc V CEW V CEW Max. Un it 3 0.15 0.25 V CC = 50 V R BB =1.2 IB1 = 2 A Typ . V CC = 50 V R BB = 0.3 IB1 = 0.5 A o T C =100 C Maximum Collector Emitter Voltage without Snubber Min. µs µs µs 500 V µs µs µs 1.9 0.06 0.12 3.2 0.12 0.3 400 µs µs µs V Inductive Load Switching Test Circuit 1) F ast electronic switch 2) Non-inductive Resistor 3) F ast recovery rectifier 3/6 BUF410 BUF410 Turn-on Switching Test Waveforms. Turn-off SwitchingTest Waveforms (inductive load). Forward Biased Safe Operating Areas. Reverse Biased Safe Operating Area Storage Time Versus Pulse Time. 4/6 BUF410 BUF410 TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 16.2 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 0.163 31 1.220 12.2 0.480 Ø 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F ¯ R 1 2 3 P025A P025A 5/6 BUF410 BUF410 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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