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BU931ZP Datasheet

Part Manufacturer Description PDF Type
BU931ZP Various Russian Datasheets Transistor Original
BU931ZP N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BU931ZP N/A Shortform Data and Cross References (Misc Datasheets) Scan
BU931ZP STMicroelectronics High Voltage Ignition Coil Driver / NPN Power Darlington Scan
BU931ZP STMicroelectronics Shortform Data Book 1988 Scan
BU931ZPFI N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BU931ZPFI N/A Shortform Data and Cross References (Misc Datasheets) Scan
BU931ZPFI STMicroelectronics High Voltage Ignition Coil Driver / NPN Power Darlington Scan
BU931ZPFI STMicroelectronics Shortform Data Book 1988 Scan

BU931ZP

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SavantIC Semiconductor Product Specification BU931ZP Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High breakdown voltage APPLICATIONS ·Application in high performance electronic car ignition PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to , BU931ZP Silicon NPN Power Transistors CHARACT ERISTICS Tj=25 unless otherwise specified SYMBOL , tolerance:±0.10 mm) 3 BU931ZP - -
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Abstract:  SGS-THOMSON IO BU931Z/BU931ZP BU931ZPFI HIGH VOLTAGE IGNITION COIL DRIVER _NPN POWER , ) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BU931Z BU931ZP BU931ZPFI VcES Collector-Base , December 1992 1/4 7^21237 GG^bflö 324 597 BU931Z/BU931ZP/BU931ZPFI THERMAL DATA TO-3 TO , ! Eho BU931Z/BU931ZP/BU931ZPFI Collector-emitter Saturation Voltage Collector-emitter Saturation , 50 ¡00 I50 ymA) -â  7T2TS37 004^0 TÃ"E 3/4 599 BU931Z/BU931ZP/BU931ZPFI FIGURE 1: Functional -
OCR Scan
SC-03S I25-C BU931 HRE60 BU931Z/BU931ZP BU931Z/BU931ZP/BU931ZPFI ISOWATT218 GC25020 SC-03S3
Abstract: n-p-n BU931ZP =25 , , ( ) (I=0), U , , Ic ( I= 7, I= 70) ( I= 8, I=100) , 350 20 1.6 U ( I=10, I=150) : -218 1.8 2.0 - -
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Abstract: BU931ZP Transistors NPN Darlington Transistor Military/High-RelN V(BR)CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175Ãu I(CBO) Max. (A)250u× @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300 h(FE) Max. Current gain.2.0k @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)10 American Microsemiconductor
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Abstract: £ ÿ j SGS-THOMSON O û[H }iôm iIO T® K S B U 9 3 1 Z /Z P /Z P F I NPN POWER DARLINGTON HIGH RUGGEDNESS INTEGRATED HIGH VOLTAGE ZENER AU TO M O TIVE MARKET APPLICATION IN HIGH PERFORMANCE ELECTRONIC CAR IGNITION DESCRIPTIO N The BU931Z, BU931ZP and BU931ZPFI are silicon multiepitaxial biplanar NPN transistors in monolithic darlington configuration mounted respectively in TO-3 metal case, SOT-93 plastic package and ISOWATT218 fully isolated package. ABSOLUTE MAXIMUM RATINGS Sym bol V cbo VcER VcES VcEO -
OCR Scan
Abstract: Package 8264 BU931ZP/ BU941ZP 8225 8232 898 8252 U 350 (I=0,1); U 1,8 (I=8); U 2,2 (I -
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BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025
Abstract: STANDARD BU930ZP BU931 BU931P BU931PFI BU931R BU931RP BU931RPFI BU931T BU931TFI BU931Z BU931ZP BU931ZPFI BU931ZT BU931ZTFI BU932 BU932P BU932R BU932RP BU932RPFI BU941 BU941P BU941PFI BU941T , BU931TFI BU931ZP 22/35 BU941Z BU941ZP BU941ZPFI BU941ZT BU941ZTFI BU931 BU931P BU931 BU931P -
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9RC6066 BOSCH 0 212 912 001 TDA1047 Bosch alternator diode TDA3541 TDA3520 LM235 IL235Z L272M L9686 U2043 U642B
Abstract: BU911 BU912 BU920 BU920P BU920T BU921 BU921P BU921T BU922 BU922P BU922T BU930R BU930RP BU931Z BU931ZP STMicroelectronics
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DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173
Abstract: TIP33B TIP35B TIP142 BDV65B BDW83C TIP33C TIP35C BU931ZP BU921P BU931RP TIP145 BDV64 BDW84A TIP34A , BU931ZPFI BU921PFI BU931RPFI 80 50 300 8.00 1.8 10.0 (V) (V) 1.60 1.80 1.60 R thj-c (C -
OCR Scan
BD199 BD325 JE182 JE350 je180 MJ13004 TP33C je-350- BD135 BD136 BD137 BD138 BD139 BD140
Abstract: BU931Z BU931ZP BU931ZPFI BU931ZT BU931ZTFI BU932 BU932P BU932R BU932RP BU932RPFI BU941 BU941P -
OCR Scan
BUT230 mje520 SGS1F444 SGSD00030 2m3771 BUT62 BUT23 BD433 MJE200 MJE520 BD435 2N4921 2IM5190
Abstract: 2N5682 M J 11016 BDX53E SGSD93E BDX53S BDX53F SGSD93F B0W91 SGSD93G BU931Z BU931ZP BU931ZPFI BU911 BU921 STMicroelectronics
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MJ2955 BUL128 2SC4977 MJE102 2SA1046 BU808DFI equivalent MJ2955 replacement BUH513 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195
Abstract: BU922T BU930Z BU930ZP BU931 BU931P BU931PFI BU931R BU931RP BU931RPFI BU931T BU931Z BU931ZP BU931ZPFI -
OCR Scan
S2000FI BUX22M JE802 bu808df1 je200 JE13005 BUW12A JE200 JE520 D44H1 D44H2 D44C1 D44C2
Abstract: BU931R BU931RP BU931RPFI BU931Z BU931ZP BU931ZPFI BUY68 D44C1 D44C2 D44C3 D44C4 P N P Type in bold -
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3DD207 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766
Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU931ZPFI DESCRIPTION ·High Voltage ·DARLINGTON ·Integrated High Voltage Zener APPLICATIONS ·Application in high performance electronic car ignition ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCER Collector-Emitter Voltage (RBE , Power Transistor BU931ZPFI ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL -
OCR Scan
B0411 B0733 THD200F1 2N5415 REPLACEMENT TIP 2n3055 BUX37 THOMSON 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233
Abstract: BU931ZPFI Transistors NPN Darlington Transistor Military/High-RelN V(BR)CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150Ãu I(CBO) Max. (A)250u× @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300 h(FE) Max. Current gain.2.0k @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)10 -
OCR Scan
2M3055 B0W94C 2M5886 13007 hf SGS115 mj 13008 2N3715 2N3716 2N3771 2M3772 2N3791 2N3792
Abstract: £ ÿ j SGS-THOMSON O û[H }iôm iIO T® K S B U 9 3 1 Z /Z P /Z P F I NPN POWER DARLINGTON HIGH RUGGEDNESS INTEGRATED HIGH VOLTAGE ZENER AU TO M O TIVE MARKET APPLICATION IN HIGH PERFORMANCE ELECTRONIC CAR IGNITION DESCRIPTIO N The BU931Z, BU931ZP and BU931ZPFI are silicon multiepitaxial biplanar NPN transistors in monolithic darlington configuration mounted respectively in TO-3 metal case, SOT-93 plastic package and ISOWATT218 fully isolated package. ABSOLUTE MAXIMUM RATINGS Sym bol V cbo VcER VcES VcEO -
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FN1016 2sC9012 on4409 on4673 ON4843 C9012 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222