BU931T/BU931TFI BU931SM SO-10 ISOWATT220 BU931T BU931TFI - Datasheet Archive

 

BU931SM HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON PRELIMINARY DATA s s s s VERY RUGGED BIPOLAR TECHNOLOGY HIGH

 

BU931T/BU931TFI BU931T/BU931TFI BU931SM BU931SM HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON PRELIMINARY DATA s s s s VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES POWER PACKAGE SPECIFICALLY DESIGNED FOR SURFACE MOUNTING (Power SO-10 SO-10 ) 1 APPLICATIONS s HIGH RUGGEDNESS ELECTRONIC IGNITIONS 2 3 3 1 TO-220 2 ISOWATT220 ISOWATT220 10 1 Power SO-10 SO-10 INTERNAL SCHEMATIC DIAGRAM for Power S O-10 Emitter: pins 1 - 5 Base: pins 6 - 10 Collector: tab ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BU931T BU931T BU931TFI BU931TFI Unit BU931SM BU931SM VC ES Collector-Emitter Voltage (V BE = 0) 500 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (IC = 0) 5 V Collector Current 10 A Collector Peak Current 15 A IB Base Current 1 A IB M Base Peak Current 5 A IC I CM o P tot Total Dissipation at Tc = 25 C T stg Storage Temperature Tj Max. Operating Junction Temperature Dicember 1993 125 45 125 -65 to 175 -65 to 175 -65 to 175 o W C 175 175 175 o C 1/8 BU931T/BU931TFI/BU931SM BU931T/BU931TFI/BU931SM THERMAL DATA TO-220 R thj-cas e Thermal Resistance Junction-case Max ISOWATT220 ISOWATT220 PowerSO-10 1.2 3.3 o 1.2 C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CE S Collector Cut-off Current (V BE = 0) V CE = 500 V V CE = 500 V T j = 125 o C 100 0.5 µA mA I CEO Collector Cut-off Current (I B = 0) V CE = 400 V V CE = 450 V T j = 125 o C 100 0.5 µA mA IE BO Emitter Cut-off Current (I C = 0) V EB = 5 V 20 mA V C EO( SUS ) Collector-Emitter Saturation Voltage I C = 100 mA L = 10 mH IB = 0 V CLAMP = RATED V CEO (See FIG.4) 400 V V CE (sat) Collector-Emitter Saturation Voltage IC = 7 A IC = 8 A IB = 70 mA IB = 100 mA 1.6 1.8 V V VB E(sat) Base-Emitter Saturation Voltage IC = 7 A IC = 8 A IB = 70 mA IB = 100 mA 2.2 2.4 V V 2.5 V h FE ts tf DC Current Gain IC = 5 A Diode Forward Voltage I F = 10 A Functional Test (see fig. 1) VF V CE = 10 V V CC = 24 V Vclamp = 400 V L= 7 mH INDUCTIVE LOAD Storage Time Fall Time (see fig. 3) V CC = 12 V Vclamp = 300 V L= 7 mH I C = 7 A IB = 70 mA V BE = 0 R BE = 47 Pulsed: Pulse durati on = 300 µs, duty cycle 1.5 % Safe Operating Areas 2/8 DC Current Gain 300 8 A 15 0.5 µs µs BU931T/BU931TFI/BU931SM BU931T/BU931TFI/BU931SM Collector-emitter Sturation Voltage Collector-emitter Sturation Voltage Collector-emitter Sturation Voltage Base-emitter Sturation Voltage Base-emitter Sturation Voltage Switching Times Inductive Load 3/8 BU931T/BU931TFI/BU931SM BU931T/BU931TFI/BU931SM FIGURE 1: Functional Test Circuit FIGURE 2: Functional Test Waveforms FIGURE 3: Switching Time Test Circuit FIGURE 4: Sustaining Voltage Test Circuit 4/8 BU931T/BU931TFI/BU931SM BU931T/BU931TFI/BU931SM TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154 3.75 3.85 0.147 0.151 D1 C D A E L9 DIA. H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C P011C 5/8 BU931T/BU931TFI/BU931SM BU931T/BU931TFI/BU931SM ISOWATT220 ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 Ø 1 2 3 L2 6/8 L4 P011G P011G BU931T/BU931TFI/BU931SM BU931T/BU931TFI/BU931SM Power SO-10 SO-10 MECHANICAL DATA mm DIM. inch MIN. MAX. MIN. TYP. MAX. 3.45 3.5 3.55 0.135 0.137 0.140 1.28 A TYP. 1.30 0.050 0.051 B C 0.15 0.006 D 9.40 9.50 9.60 0.370 0.374 0.378 E 4.98 5.08 5.48 0.196 0.200 0.216 E1 0.40 0.45 0.60 0.016 0.018 0.024 E2 1.17 1.27 1.37 0.046 0.050 0.054 F 9.30 9.40 9.50 0.366 0.370 0.374 F1 7.95 8.00 8.15 0.313 0.315 0.321 G 7.40 7.50 7.60 0.291 0.295 0.299 H 6.80 6.90 7.00 0.267 0.417 0.421 I 0.10 K 0.004 13.80 14.10 0.40 0.50 M 1.60 1.67 N 0.60 0.08 0.543 0.555 0.567 0.016 0.020 1.80 0.063 0.066 0.071 1.00 0.024 0.031 0.039 E2 L 14.40 5 D = G 1 E = 6 1 E1 10 = = F1 = F B 0.08 mm. 0.003 in = I C M L A H N K 7/8 BU931T/BU931TFI/BU931SM BU931T/BU931TFI/BU931SM Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 8/8