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Part : BU508DF Supplier : Philips Semiconductors Manufacturer : Chip One Exchange Stock : 370 Best Price : - Price Each : -
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BU508df Datasheet

Part Manufacturer Description PDF Type
BU508DF Continental Device India NPN POWER TRANSISTORS Original
BU508DF Philips Semiconductors Silicon Diffused Power Transistor Original
BU508DF STMicroelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Original
BU508DF Transys Electronics NPN POWER TRANSISTORS Original
BU508DF Various Russian Datasheets Transistor Original
BU508DF Wing Shing Computer Components SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) Original
BU508DF Continental Device India TO-3P Fully Isolated Plastic Package Transistors Scan
BU508DF Continental Device India Semiconductor Device Data Book 1996 Scan
BU508DF N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
BU508DF N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BU508DF N/A Shortform Data and Cross References (Misc Datasheets) Scan
BU508DF N/A Shortform Data and Cross References (Misc Datasheets) Scan
BU508DF Philips Semiconductors Silicon diffused power transistors Scan
BU508DF Sanyo Semiconductor Transistors for TV Display Horizontal Deflection Output Use Scan
BU508DFI STMicroelectronics Silicon NPN Transistor+diode Original
BU508DFI STMicroelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Original
BU508DFI STMicroelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Original
BU508DFI STMicroelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS Original
BU508DFI STMicroelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Original
BU508DFI STMicroelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Original
Showing first 20 results.

BU508df

Catalog Datasheet MFG & Type PDF Document Tags

BU508DF

Abstract: BU508DF1 ; BU508DF High-voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for the BU508DF), primarily intended for use in horizontal deflection circuits of , voltage IF = 4,5 a (BU508DF) VF typ. 1,6 V Fall time tf typ. 0,7 ms MECHANICAL DATA Fig. 1 SOT199. BU508AF BU508DF 1 = base 2 = collector 3 = emitter Mounting base is electrically isolated from all , transistors BU508AF; BU508DF RATINGS Limiting values in accordance with the Absolute Maximum System (IEC
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UBC023 BU508DF1 transistor bu508af philips bu508af bu50ba bu508af philips 7Z21063

bu508df

Abstract: N AUER PHILIPS/DISCRETE b=lE D bbS3T31 0D2fl2?D 325 IAPX BU508AF BU508DF SILICON , envelope (w ith integrated efficiency diode fo r the BU508DF), prim arily intended fo r use in horizontal , (BU508DF) Vf typ. 1,6 V Fall time tf typ. 0,7 ns Collector-emitter saturation , Dimensions in mm Fig. 1 SOT 199. 3 BU508AF 3 BU508DF 1 = base 2 = collector 3 = em itter , IP S /D IS C R E T E BU508AF BU508DF bTE D â  b f c i5 3 T 3 1 â¡ Q E6E71 E b
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S3T31

BU508AF

Abstract: BU508F Transys Electronics L I M I T E D NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in , BU508F, AF IEBO VEB=5V, IC=0 Emitter Cut-off Current BU508DF hFE IC=4.5A, VCE=5V DC Current Gain VF IF=4.0A Diode forward Voltage BU508DF VCE(sat) * IC=4.5A, IB=2.0A Collector Emitter , µs µs BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package TO-3P (TO-218) Plastic
Transys Electronics
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bu508af datasheet transistor bu508af equivalent

bu508df

Abstract: IBM REV 2.8 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF , Power Transistor BU508DF ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 °C unless otherwise , Transistor ICsat TRANSISTOR IC BU508DF + 150 v nominal adjust for ICsat DIODE t 1mH , BU508AD VCESAT / V 1 BU508DF BU508AD VCESAT/V 10 0.9 0.8 0.7 0.6 0.5 1 IC = 6A , Product specification Silicon Diffused Power Transistor 100 BU508DF IC / A 100 IC / A
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IBM REV 2.8 all ic data BU508DF equivalent all ic datasheet in one pdf file curve tracer

bu508df

Abstract: BU 508A transistor N AMER PHILIPS/DISCRETE blE D â  bbS3131 â¡â¡2ÃE7Q 325 BU508AF BU508DF SILICON DIFFUSED , 99 envelope (with integrated efficiency diode for the BU508DF), primarily intended for use in horizontal , forward voltage IF = 4,5 A (BU508DF) VF typ. 1,6 V Fall time tf typ. 0,7 V s MECHANICAL DATA Fig. 1 SOT 199. BU508AF BU508DF 1 = base 2 = collector 3 = emitter Mounting base is electrically , BU508DF blE » bb53T31 D0EÛE71 2bl IAPX RATINGS Limiting values in accordance with the Absolute
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BU 508A transistor bu50bdf BU508D BU508DF TRANSISTOR S3131 53T31 7Z2I063

BU508DF

Abstract: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF , BU508DF ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 °C unless otherwise specified SYMBOL , BU508DF + 150 v nominal adjust for ICsat DIODE t 1mH IBend IB t 20us 26us D.U.T , Product specification Silicon Diffused Power Transistor BU508AD VCESAT / V 1 BU508DF , Diffused Power Transistor 10 Zth K/W BU508DF bu508ax 100 IC / A 0.5 1 = 0.01
Philips Semiconductors
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bu508af datasheet

Abstract: BU508aF equivalent Certified Manufacturer NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic , Cut-off Current BU508DF hFE IC=4.5A, VCE=5V DC Current Gain VF IF=4.0A Diode forward Voltage BU508DF VCE(sat) * IC=4.5A, IB=2.0A Collector Emitter Saturation Voltage BU508AF, DF IC=4.5A, IB , Limited Data Sheet Page 1 of 3 BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package , Page 2 of 3 Notes BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package
Continental Device India
Original
BU508aF equivalent C-120 BU508DFR 230202E

bu508df

Abstract: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF , Power Transistor BU508DF ISOLATION LIMITING VALUE & CHARACTERISTIC Th s = 25 `C unless otherwise , Transistor BU508DF September 1997 77 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF VCESAT/V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 u , specification Silicon Diffused Power Transistor BU508DF IC/A 100 IC/A S= 0.01 < p= ICMmax
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BU508DF

Abstract: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF , Power Transistor BU508DF ISOLATION LIMITING VALUE & CHARACTERISTIC Th s = 25 'C unless otherwise , specification Silicon Diffused Power Transistor BU508DF September 1997 81 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF VCESAT/V 0.9 0.8 0.7 , BU508DF 100 IC /A 100 S = 0.01 ICI A S = 0.01 ICMmax ICMmax 10 i i 11 1C max
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PINNING-SOT199 100-P

BU508AF

Abstract: BU508DF POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E , =0 Emitter Base Voltage BU508F, AF IEBO VEB=5V, IC=0 Emitter Cut-off Current BU508DF hFE IC=4.5A, VCE=5V DC Current Gain VF IF=4.0A Diode forward Voltage BU508DF VCE(sat) * IC=4.5A, IB , , BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package TO-3P (TO-218) Plastic Package A B DIM , , BU508DF TO- 3P Fully Isolated Plastic Package Disclaimer The product information and the selection
Continental Device India
Original

BU508DF

Abstract: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF , Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF ISOLATION , specification Silicon Diffused Power Transistor BU508DF VCE IBend 20us 26us 64us Fig. 1. Switching times , BU508DF VCESAT/V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 I , Power Transistor BU508DF IC/A 1 10 100 1000 VCE/V Fig.9. Forward bias safe operating area. Ths = 25Â
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transistor 2SC2271

Abstract: 2SC2271 Ordering number : ENA0261 BU508DF Preliminary SANYO Semiconductors DATA SHEET BU508DF Specifications NPN Triple Diffused Planar Silicon Transistor Horizontal Deflection Output , equipment. www.semiconductor-sanyo.com/network 80608KC TI IM MIYOSHI No. A0261-1/4 BU508DF Package , BU508DF 2SC2271 to LA7820 pin4 100 3k 0.001F + 4.7F 2.4k VCC=110V T : C5163 NP=1025T NS=48 3/4T Core DR811 , Collector-to-Emitter Voltage, VCE - V IT03779 Base-to-Emitter Voltage, VBE - V No. A0261-2/4 BU508DF 5
SANYO Electric
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transistor 2SC2271 NP-102 2SC2271 Sanyo A0261-4/4

bu508df

Abstract: BU508DF equivalent Inchange Semiconductor Product Specification BU508DF Silicon NPN Power Transistors DESCRIPTION With TO-3PFa package High voltage,high speed With integrated efficiency diode APPLICATIONS For use in horizontal deflection circuits of colour TV receivers PINNING PIN DESCRIPTION 1 , =25 Inchange Semiconductor Product Specification BU508DF Silicon NPN Power Transistors , =4.5A 1.6 2 2.0 V Inchange Semiconductor Product Specification BU508DF Silicon NPN
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data sheet bu508df
Abstract: POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E , =10mA, IC =0 Emitter Base Voltage BU508F, AF IEBO VEB=5V, IC=0 Emitter Cut-off Current BU508DF hFE IC=4.5A, VCE=5V DC Current Gain VF IF=4.0A Diode forward Voltage BU508DF VCE(sat) * IC , Sheet Page 1 of 3 BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package TO-3P (TO , 2 of 3 Notes BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package Disclaimer Continental Device India
Original

bu508af datasheet

Abstract: BU508AF Certified Manufacturer NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic , Cut-off Current BU508DF hFE IC=4.5A, VCE=5V DC Current Gain VF IF=4.0A Diode forward Voltage BU508DF VCE(sat) * IC=4.5A, IB=2.0A Collector Emitter Saturation Voltage BU508AF, DF IC=4.5A, IB , Limited Data Sheet Page 1 of 3 BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package , Page 2 of 3 Notes BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package
Continental Device India
Original

BU508DF

Abstract: SavantIC Semiconductor Product Specification BU508DF Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers PINNING PIN DESCRIPTION 1 Base , Semiconductor Product Specification BU508DF Silicon NPN Power Transistors CHARACTERISTICS Tj , OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 BU508DF -
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BU508DF

Abstract: NPN BU508DF SILICON DIFFUSED POWER TRANSISTORS The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for the BU508DF). They are a high voltage, high speed switching and they are intended for use in horizontal deflexion circuits of colour television receivers. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCESM IC ICM IB ICsat IBM Pt TJ TStg Ratings Collector-Emitter Voltage Collector-Emitter Voltage Collector Current Collector Peak Current
Comset Semiconductors
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d1878

Abstract: c5296 SA/iYO *:Darlington Unmarked¡T0-3PML, #:T0-3PBL, «:T0-3JML. TO-3PML, PBL, JML Type Transistors \ VCEO icX (A)\ 30 50 60 100 400 450 500 600 700 800 900 1000 1200 1500 2 K1413 3 C4426 D1876 D1882 4 C4457 D1877 D1883 4. 5 C4427 K1463 5 â 5388* D1878 D1884 BU508DF BU508AF K3259 6 C3894 C4428 D1879 D1885 7 B1507 D2280 C4458 C3895 C4123 C4769 C4770 C5041 C5042 D2251 D2252 HPA72R 8 K1451 K3249
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D1880 D2578 D1881 c5296 c5302 c4460 transistors D1878 C3896 C4124 C4429 C4923 C5296 C5297
Abstract: Bu508AF NPN 45 8 1500 700 8 40 TO-3PFa 37 Bu508DF NPN 45 8 1500 -
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2SC4760 SC-56 2SC5148 2-16E3A 2SC5149 2SC1413A

BU508DF

Abstract: BU508DF SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf TOP-3Fa PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation
Wing Shing Computer Components
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Showing first 20 results.