BU508DW - Datasheet Archive

 

Product specification Silicon Diffused Power Transistor BU508DW GENERAL DESCRIPTION High voltage, high-speed switching npn

 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DW BU508DW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time VBE = 0 V PINNING - SOT429 PIN TYP. PIN CONFIGURATION UNIT 4.5 1.6 0.7 Tmb 25 °C IC = 4.5 A; IB = 1.6 A f = 16kHz IF = 4.5 A ICsat = 4.5 A; f = 16kHz MAX. 1500 700 8 15 125 1.0 2.0 - V V A A W V A V µs SYMBOL DESCRIPTION 1 base 2 collector 3 c emitter tab collector b 2 1 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V MAX. UNIT -65 - 1500 700 8 15 4 6 125 150 150 V V A A A A W °C °C TYP. MAX. UNIT - Tmb 25 °C MIN. 1.0 K/W 45 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Junction to mounting base - Rth j-a Junction to ambient in free air July 1998 1 Rev 1.200 ! " # & ' ' $ ) ( % ) # * # + !, # & # # ( # ! -# " & # * # # # .3,41 " . 201 5 # . /01 # # # # -# * !6 -# " # # * # 3 # -# # 7 ) 7 + 3 # * ( & ,# ) / * 8* * 98 * 8* * 8:; < " # & # !6 # # "