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Part : BU508AF Supplier : STMicroelectronics Manufacturer : Avnet Stock : - Best Price : - Price Each : -
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Part : BU508A Supplier : Motorola Manufacturer : Rochester Electronics Stock : 3,769 Best Price : $5.34 Price Each : $6.57
Part : BU508AW Supplier : STMicroelectronics Manufacturer : RS Components Stock : 480 Best Price : £1.2640 Price Each : £1.7050
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Part : BU508AW Supplier : STMicroelectronics Manufacturer : RS Components Stock : 1,834 Best Price : £1.88 Price Each : £2.2850
Part : BU508AF Supplier : - Manufacturer : Chip One Exchange Stock : 172 Best Price : - Price Each : -
Part : BU508AF Supplier : STMicroelectronics Manufacturer : Chip1Stop Stock : 392 Best Price : $1.3958 Price Each : $1.7356
Part : BU508AW Supplier : STMicroelectronics Manufacturer : Chip1Stop Stock : 246 Best Price : $1.9030 Price Each : $1.9030
Part : BU508AW Supplier : STMicroelectronics Manufacturer : element14 Asia-Pacific Stock : 184 Best Price : $1.65 Price Each : $3.4080
Part : BU508AW Supplier : STMicroelectronics Manufacturer : Farnell element14 Stock : 536 Best Price : £1.26 Price Each : £2.10
Part : BU508AF Supplier : STMicroelectronics Manufacturer : New Advantage Stock : 2,550 Best Price : $1.61 Price Each : $1.67
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BU508A Datasheet

Part Manufacturer Description PDF Type
BU508A Central Semiconductor Power Transistors TO-218 Case, NPN High Voltage Switching Original
BU508(A) N/A Silicon NPN Transistor Original
BU508A Philips Semiconductors Silicon Diffused Power Transistor Original
BU508A STMicroelectronics High Voltage Fast-Switching NPN Power Transistor Original
BU508A STMicroelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS Original
BU508A USHA NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. Original
BU508A Wing Shing Computer Components NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) Original
BU508A Central Semiconductor Power Transistors Scan
BU508A Korea Electronics V(ceo): 700V I(c): 8A P(c): 60W NPN Silicon Transistor Scan
BU508A Mospec POWER TRANSISTORS(5A,1500V,125W) Scan
BU508A Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BU508A Motorola Switchmode Datasheet Scan
BU508A Motorola European Master Selection Guide 1986 Scan
BU508A Motorola Power Transistors 8A 1500V Scan
BU508A N/A Cross Reference Datasheet Scan
BU508A N/A Cross Reference Datasheet Scan
BU508A N/A Semiconductor Master Cross Reference Guide Scan
BU508A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BU508A N/A Shortform Data and Cross References (Misc Datasheets) Scan
BU508A N/A Shortform Data and Cross References (Misc Datasheets) Scan
Showing first 20 results.

BU508A

Catalog Datasheet MFG & Type PDF Document Tags

c120 transistor

Abstract: BU508A TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508A TO- 3PN Non Isolated Plastic Package Color TV , BU508A Rev260405D Continental Device India Limited Data Sheet Page 1 of 6 BU508A TO- 3PN , BU508A Rev260405D Continental Device India Limited Data Sheet Page 2 of 6 BU508A TO- 3PN , (WEEE). BU508A Rev260405D Continental Device India Limited Data Sheet Page 3 of 6 21.2 BU508A TO- 3PN Non Isolated Precautions for physical handling of Power Plastic Transistors (TO
Continental Device India
Original
c120 transistor ts 4141 TRANSISTOR transistor BU508A Data- sheet transistor k 1119 transistor data cd TRANSISTOR BU508A 260405D C-120

BU508A

Abstract: BU208A BU208A BU508A/BU508AFI ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s , HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using , Value 1500 700 10 8 15 BU508A BU508AFI TO - 218 ISOWATT218 125 50 2500 -65 to 175 -65 to , / BU508A / BU508AFI THERMAL DATA TO-3 R thj-case Thermal Resistance Junction-case TO , Operating Areas (TO-218/ISOWATT218) BU208A / BU508A / BU508AFI Derating Curves (TO-3) Derating
STMicroelectronics
Original
BU508 BU508A/BU508AFI P025C/A

BU508A

Abstract: BU508D Philips Semiconductors Product specification Silicon diffused power transistors BU508A , . 0.7 jus mechanical data Fig. 1 SOT93A. BU508A BU508D 1 = base 2 = collector 3 = emitter , power transistors BU508A; BU508D RATINGS Limiting values in accordance with the Absolute Maximum , power transistors BU508A; BU508D mm VCE(V> vCEOsust Fig. 2 Test circuit for VcEOsust- Fig. 3 , Semiconductors Product specification Silicon diffused power transistors BU508A; BU508D + 150V nominal adjust
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OCR Scan
BY223 philips bu508a bu50ba diode BY223 BU508D transistor dd77473 DD774 7110A2L DD77473

BU508A

Abstract: BU508D BU508A, 508D Horizontal Deflection Transistors High Voltage Switching Specifically designed , Voltage VCEX = 1500V (Minimum) - BU508A, BU508D. · Glassivated Base-Collector Junction. Dimensions Minimum Maximum NPN BU508A A 20.63 22.38 B 15.38 16.20 C 1.90 2.70 , ) Dimensions : Millimetres Page 1 31/05/05 V1.0 BU508A, 508D Horizontal Deflection Transistors , Page 2 31/05/05 V1.0 BU508A, 508D Horizontal Deflection Transistors Electrical Characteristics
Multicomp
Original
data sheet bu508d 6 PIN TRANSISTORS 566 BU-508A 508D

BU508A

Abstract: BU208A BU208A BU508A/BU508AFI ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s , DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for , Unit V V V A A W V o o C C 1/8 BU208A / BU508A / BU508AFI THERMAL DATA T O-3 R , (TO-218/ISOWATT218) BU208A / BU508A / BU508AFI Derating Curves (TO-3) Derating Curves (TO , Switching Time Inductive Load 3/8 BU208A / BU508A / BU508AFI Switching Time Inductive Load Figure
STMicroelectronics
Original
T218 WATT218

BU208A

Abstract: BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS . STM PREFERRED , , BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high , °c 1/8 BU208A / BU508A / BU508AFI THERMAL DATA TO -3 Rth j-c a se Therm al R esistance , 5 lc (A) BU208A / BU508A / BU508AFI Figure 1 : Inductive Load Switching Test Circuit. 4/8 BU208A / BU508A / BU508AFI TO-3 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX
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OCR Scan
TT218 P003F P025C

BU508A

Abstract: BU208A BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s , DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for , BU208A / BU508A / BU508AFI THERMAL DATA T O-3 R t hj-ca se Thermal Resistance Junction-case TO , -3) 2/8 Safe Operating Area (TO-218/ISOWATT218) BU208A / BU508A / BU508AFI DC Current Gain , Switching Time Inductive Load (see figure 1) 3/8 BU208A / BU508A / BU508AFI Figure 1: Inductive Load
STMicroelectronics
Original
E81734

BU508A

Abstract: BU508D Philips Semiconductors Product specification Silicon diffused power transistors BU508A , typ. 0.7 jus MECHANICAL DATA Fig. 1 SOT93A. BU508A 1 = base 2 = collector 3 = emitter BU508D , specification Silicon diffused power transistors BU508A; BU508D RATINGS Limiting values in accordance , specification Silicon diffused power transistors BU508A; BU508D 30-60 Hz 7262340.1 mm VCE vCEOsust Fig , Product specification Silicon diffused power transistors BU508A; BU508D - 150 V nominal adiust for lCM
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OCR Scan
transistor BU508D 3BS transistor BY22B transistor AS 431 JZKJ44 DQ774 G077472

BU508

Abstract: BU508D ) Collector - Emitter Saturation Voltage (lc =4.5 A, lB = 2.0 A) BU508A.BU508D BU508 ^CE(sat) 1.0 5.0 V Base , .) BU508,BU508A,BU508D * Glassivated Base-Collector Junction MAXIMUM RATINGS THERMAL CHARACTERISTICS , 25 50 75 100 125 150 Tc , TEMPERATUREC C) NPN BU508 BU508A BU508D Characteristic Symbol , 0.70 BU508, BU508A,BU508D NPN ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted , Test: Pulse width ^ 300 us , Duty Cycle < 2.0% BU508,BU508AU508D NPN 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
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OCR Scan
transistor bu508 BU508 CIRCUITS bus08a bu508 transistor BU508B bu508 Transistor Horizontal

BU508A

Abstract: BU508D N AMER PHILIPS/DISCRETE blE D â  D02A2b4 DEI BU508A BU508D SILICON DIFFUSED POWER TRANSISTOR , mechanical data Fig. 1 SOT93A. BU508A 1 = base 2 = collector 3 = emitter & 4,3 BU508D 18,2 16,1 , BU508A BU508D LIE D 1^53131 002öBb5 Tbä «APX ratings Limiting values in accordance with the , Manufacturer N AUER PHILIPS/DISCRETE Silicon diffused power transistor LIE D â  ^53^31 DDEÃEbb ITH BU508A , bu508a 'cm _ -90% V-10% i \ â'" J- i - t. - Fig. 4 Switching times waveforms; Icm = 4.5 A
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OCR Scan
transistor d 1991 ar T1185 D02A2 7Z243S4 7Z2436S 53R31

BU208A

Abstract: TO-218 weight BU208A BU508A/BU508AFI ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s , TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa , BU208A / BU508A / BU508AFI THERMAL DATA T O-3 R t hj-ca se Thermal Resistance Junction-case TO , / BU508A / BU508AFI DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation , / BU508A / BU508AFI Figure 1: Inductive Load Switching Test Circuit. 4/8 BU208A / BU508A / BU508AFI
STMicroelectronics
Original
TO-218 weight bu208a base BU508AFI equivalent

BU208A

Abstract: BU508A BU208A BU508A/BU508AFI ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s , DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for , V V V A A W V o o C C 1/8 BU208A / BU508A / BU508AFI THERMAL DATA TO-3 R , ) BU208A / BU508A / BU508AFI Derating Curves (TO-3) Derating Curves (TO-218/ISOWATT218) DC Current , Inductive Load 3/8 BU208A / BU508A / BU508AFI Switching Time Inductive Load Figure 1: Inductive
STMicroelectronics
Original
china tv schematic diagram bu508a diagram

BU508A

Abstract: bu208a ® BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s , DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for , ) Value 1500 700 10 8 15 BU208A BU508A BU508AFI TO - 3 TO - 218 ISOW AT T218 150 125 50 -65 to 175 -65 to , / BU508A / BU508AFI THERMAL DATA T O-3 R t hj-ca se Thermal Resistance Junction-case Max 1 TO -218 1 ISO , -218/ISOWATT218) 2/8 BU208A / BU508A / BU508AFI DC Current Gain Collector Emitter Saturation Voltage
STMicroelectronics
Original

BU508A

Abstract: BU208A BU208A BU508A/BU508AFI ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s , DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for , V V V A A W V o o C C 1/8 BU208A / BU508A / BU508AFI THERMAL DATA TO-3 R , ) BU208A / BU508A / BU508AFI Derating Curves (TO-3) Derating Curves (TO-218/ISOWATT218) DC Current , bs O 3/8 BU208A / BU508A / BU508AFI Switching Time Inductive Load uc d Figure 1
STMicroelectronics
Original
DSASW003743

BU208A

Abstract: BU508A BU208A BU508A/BU508AFI ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s , DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for , BU208A / BU508A / BU508AFI THERMAL DATA T O-3 R t hj-ca se Thermal Resistance Junction-case TO , -3) 2/8 Safe Operating Area (TO-218/ISOWATT218) BU208A / BU508A / BU508AFI DC Current Gain , Switching Time Inductive Load (see figure 1) 3/8 BU208A / BU508A / BU508AFI Figure 1: Inductive Load
STMicroelectronics
Original
TO-218 Package

bu508a

Abstract: c 2579 power transistor TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508A TO- 3PN Non Isolated Plastic Package Color TV , BU508A Rev260405D Continental Device India Limited Data Sheet Page 1 of 3 BU508A TO- 3PN Non Isolated Plastic Package BU508A Rev260405D Continental Device India Limited Data Sheet Page 2 of 3 Notes BU508A TO- 3PN Non Isolated Plastic Package Disclaimer The product , : email @cdil.com www.cdilsemi.com BU508A Rev260405D Continental Device India Limited Data Sheet
Continental Device India
Original
c 2579 power transistor c 2579 transistor using of damper in Horizontal Output Transistor transistor 800V 1A
Abstract: N AUER PHILIPS/DISCRETE b lE bb53c l31 DDEflEbM DEI BU508A BU508D y v I> SILICON , A 7 MHz 125 pF « a p x N AMER PHI LIP S/DISCRETE b^E T m > BU508A BU508D , ; typical value of t f = 0.7 ps. ( December 1991 75 N A PIER PHILIPS/DISCRETE BU508A BU508D k , (BU508A). + 150 V nominal adjust fo r Iqm 2 nF 7 Z2 4 3 6 S Fig. 6 Switching times test circu , power transistor (1) (2) I II b^E T m > IAPX bbSBRBl OOB&Bbfl 777 BU508A BU508D -
OCR Scan
7Z88402 7Z8S40-

BU208A

Abstract: GC630 BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS . . . STM PREFERRED , -65 to 150 °c 1/8 BU208A / BU508A / BU508AFI THERMAL DATA TO-3 R lh ] - c a s e T O -2 1 , -218/ISOW ATT218) BU208A / BU508A / BU508AFI DC Current Gain Collector Emitter Saturation Voltage , ) 5 J BU208A / BU508A / BU508AFI Figure 1 : Inductive Load Switching Test Circuit. 4/8 BU208A / BU508A / BU508AFI TO-3 MECHANICAL DATA mm DIM. MIN. A B C D E G N P R U V 11.00 0.97 1.50
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OCR Scan
GC630 IS0WATT218 SC06960

BU508A

Abstract: SOWATT218 X = T SGS-THOMSON M fg im iO T O K S BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN , COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa , 1997 199 BU208A / BU508A / BU508AFI THERMAL DATA TO-3 Rthj-case Therm al R esistance Jun , 200 SGS-THOMSON BU208A / BU508A / BU508AFI DC Current Gain Collector Emitter Saturation , Load (see figure 1} *7 # n a m n M m rrz SGS-THOMSON 3/4 201 BU208A / BU508A / BU508AFI
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OCR Scan
SOWATT218

BU508A

Abstract: SavantIC Semiconductor Product Specification BU508A Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 , Semiconductor Product Specification BU508A Silicon NPN Power Transistors CHARACTERISTICS Tj , tolerance:±0.10 mm) 3 BU508A -
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Original

bu508

Abstract: Q63100-P2462-J29 N AUER PHILIPS/DISCRETE b lE bb53c l31 DDEflEbM DEI BU508A BU508D y v I> SILICON , A 7 MHz 125 pF « a p x N AMER PHI LIP S/DISCRETE b^E T m > BU508A BU508D , ; typical value of t f = 0.7 ps. ( December 1991 75 N A PIER PHILIPS/DISCRETE BU508A BU508D k , (BU508A). + 150 V nominal adjust fo r Iqm 2 nF 7 Z2 4 3 6 S Fig. 6 Switching times test circu , power transistor (1) (2) I II b^E T m > IAPX bbSBRBl OOB&Bbfl 777 BU508A BU508D
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OCR Scan
Q63100-P2462-J29 Q67000-A2379 4601-D Q67000-A2390 P-DIP-18 4601/D

BU 508 transistor

Abstract: transistor bu .) BU508,BU508A,BU508D * Glassivated Base-Collector Junction MAXIMUM RATINGS THERMAL CHARACTERISTICS , 25 50 75 100 125 150 Tc , TEMPERATUREC C) NPN BU508 BU508A BU508D Characteristic Symbol , 0.70 BU508, BU508A,BU508D NPN ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted , Test: Pulse width ^ 300 us , Duty Cycle < 2.0% BU508,BU508A,ÃU508D NPN 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 , EMTTTER VOLTAGE (VOLTS) 600 1K BU508,BU508A,BU508D NPN le - Vce BU508D DC CURRENT GAIN a: O 8 Ã
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OCR Scan
BU 508 transistor transistor bu Bu608A transistor BU 608 bu 508 BU608 DIN41859 D--07 15A3DIN
Showing first 20 results.