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BU4066BCFV-E2 ROHM Semiconductor SPST, 4 Func, 1 Channel, CMOS, PDSO14, ROHS COMPLIANT, SSOP-14 visit Digikey
BU4066BCF-E2 ROHM Semiconductor SPST, 4 Func, 1 Channel, CMOS, PDSO14, ROHS COMPLIANT, SOP-14 visit Digikey
BU4066BC ROHM Semiconductor SPST, 4 Func, 1 Channel, CMOS, PDIP14, ROHS COMPLIANT, DIP-14 visit Digikey
BU4069UB ROHM Semiconductor Inverter, 4000/14000/40000 Series, 6-Func, 1-Input, CMOS, PDIP14, ROHS COMPLIANT, DIP-14 visit Digikey
BU406G ON Semiconductor NPN Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE visit Digikey
BU4069UBFV-E2 ROHM Semiconductor Inverter, 4000/14000/40000 Series, 6-Func, 1-Input, CMOS, PDSO14, ROHS COMPLIANT, SSOP-14 visit Digikey

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Part : BU406 Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : 268 Best Price : $0.2740 Price Each : $0.78
Part : BU406 Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : - Best Price : €0.2926 Price Each : €0.4740
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Part : BU 406 Supplier : Thomas & Betts Manufacturer : Newark element14 Stock : - Best Price : $6.19 Price Each : $9.46
Part : BU-4061-M-39-0 Supplier : Mueller Electric Manufacturer : Newark element14 Stock : - Best Price : $19.49 Price Each : $21.73
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Part : BU406 Supplier : Fairchild Semiconductor Manufacturer : Newark element14 Stock : 974 Best Price : $0.2430 Price Each : $0.2430
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Part : BU406 Supplier : SPC Multicomp Manufacturer : Newark element14 Stock : 2,452 Best Price : $0.55 Price Each : $1.52
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Part : BU406G Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.47 Price Each : $0.47
Part : GBU406 Supplier : Diodes Manufacturer : Future Electronics Stock : - Best Price : $0.5950 Price Each : $0.82
Part : BU406 Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 799 Best Price : $0.31 Price Each : $0.38
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Part : BU406 Supplier : Fairchild Semiconductor Manufacturer : RS Components Stock : 1,180 Best Price : £0.2560 Price Each : £0.5260
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Part : GBU406 Supplier : Zetex Semiconductors Manufacturer : RS Components Stock : 20 Best Price : £0.3980 Price Each : £0.4380
Part : BU406G Supplier : ON Semiconductor Manufacturer : TME Electronic Components Stock : 475 Best Price : $0.5817 Price Each : $0.76
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Part : BU406 Supplier : SPC Multicomp Manufacturer : element14 Asia-Pacific Stock : 2,418 Best Price : $0.74 Price Each : $1.2240
Part : BU406 . Supplier : Fairchild Semiconductor Manufacturer : element14 Asia-Pacific Stock : 1,002 Best Price : $0.33 Price Each : $0.9280
Part : BU406G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 414 Best Price : $0.50 Price Each : $1.3760
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Part : GBU406 Supplier : Taiwan Semiconductor Manufacturer : element14 Asia-Pacific Stock : 1,521 Best Price : $0.38 Price Each : $1.2320
Part : GBU406F Supplier : SPC Multicomp Manufacturer : element14 Asia-Pacific Stock : - Best Price : $0.32 Price Each : $0.7340
Part : BU406 Supplier : SPC Multicomp Manufacturer : Farnell element14 Stock : 2,332 Best Price : £0.9990 Price Each : £2.33
Part : BU406 . Supplier : Fairchild Semiconductor Manufacturer : Farnell element14 Stock : 974 Best Price : £0.2840 Price Each : £0.6550
Part : BU406G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 414 Best Price : £0.4540 Price Each : £0.9340
Part : BU406TU Supplier : Fairchild Semiconductor Manufacturer : Farnell element14 Stock : 114 Best Price : £0.2520 Price Each : £0.6410
Part : GBU406 Supplier : Taiwan Semiconductor Manufacturer : Farnell element14 Stock : 1,822 Best Price : £0.5830 Price Each : £1.29
Part : BU-4061-M-39-0 Supplier : Mueller Electric Manufacturer : Master Electronics Stock : 3 Best Price : $14.79 Price Each : $19.55
Part : BU-4061-M-39-2 Supplier : Mueller Electric Manufacturer : Master Electronics Stock : 8 Best Price : $14.79 Price Each : $19.55
Part : BU-4062-M-39-0 Supplier : Mueller Electric Manufacturer : Master Electronics Stock : 10 Best Price : $14.79 Price Each : $19.55
Part : BU-4062-M-39-2 Supplier : Mueller Electric Manufacturer : Master Electronics Stock : 10 Best Price : $14.79 Price Each : $19.55
Part : GBU406 Supplier : Taiwan Semiconductor Manufacturer : Master Electronics Stock : 897 Best Price : $0.4140 Price Each : $1.45
Part : GBU406D2 Supplier : Taiwan Semiconductor Manufacturer : Master Electronics Stock : 700 Best Price : $0.2950 Price Each : $0.4710
Part : BU406 Supplier : Thomas & Betts Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : BU406G Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 3,500 Best Price : $0.50 Price Each : $0.50
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BU406 Datasheet

Part Manufacturer Description PDF Type
BU406 Bourns NPN SILICON POWER TRANSISTORS Original
BU406 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
BU406 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BU4-06 Frontier Electronics 4A SILICON SINGLE-PHASE BRIDGE RECTIFIER Original
BU406 Motorola 7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS Original
BU406 On Semiconductor NPN Power Transistors Original
BU406 On Semiconductor BU406 - TRANSISTOR 7 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-220AB, CASE 221A-09, 3 PIN, BIP General Purpose Power Original
BU406 Philips Semiconductors Silicon Diffused Power Transistor Original
BU406 Power Innovations NPN SILICON POWER TRANSISTORS Original
BU406 Sinyork Mini size of Discrete semiconductor elements Original
BU406 STMicroelectronics SILICON NPN SWITCHING TRANSISTOR Original
BU406 STMicroelectronics NPN Epitaxial Silicon Transistor Original
BU406 USHA NPN, horizontal deflection transistor. For horizontal deflection output stages of TVs ahd CRTs. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ieb = 7Adc, PD = 60W. Original
BU406 Various Russian Datasheets Transistor Original
BU406 Wing Shing Computer Components NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) Original
BU406 Boca Semiconductor NPN POWER TRANSISTOR Scan
BU406 Central Semiconductor NPN Silicon Power Transistor, TO-220 Scan
BU406 Central Semiconductor Power Transistors Scan
BU406 Continental Device India Semiconductor Device Data Book 1996 Scan
BU406 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan
Showing first 20 results.

BU406

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 3 V into its flyback position. Fig.3 Waveforms for fall, storage and turn-off times. "FE BU406. Fig.4 DC current gain, typical values. VcEsat (V) BU406. Ic/lg =10; T,= 25 °C. Fig , _Product specification Silicon diffused power transistors BU406/BU407 DESCRIPTION High-voltage , voltage peak value; BU406 Vbe = 0 400 V BU407 330 V VcEO collector-emitter voltage open base BU406 200 V BU407 150 V VoE». collector-emitter saturation voltage 1 V >0 collector current DC -
OCR Scan
transistor BU406 bu406 ru 8U407 BU406/BU407 MEB012 MSA060
Abstract: BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak Collector , ) Emitter-base voltage Continuous collector current BU407 BU406 BU406 BU406 SYMBOL V CBO VCEX V CEO VEB ICM Ptot , %. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BU406 , and 3) f = 1 MHz f = 1 MHz (see Note 4) 6 60 12 20 1 1.2 V V MHz pF TC = 150°C TC = 150°C BU406 BU407 BU406 BU407 BU406 BU407 TEST CONDITIONS MIN 140 5 5 0.1 0.1 1 1 1 mA mA TYP MAX UNIT V VCE = 400 V Bourns
Original
TCD124AA TCD124AB TCD124AC SAD124AA
Abstract: www.cdilsemi.com BU406_407 Rev_1 281102E Continental Device India Limited Data Sheet Page 4 of 4 , PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package Horizontal Deflection Output Stages , Voltage BU406 BU407 UNIT 200 150 V Collector Base Voltage VCBO 400 330 V , =100mA, IB=0 BU406 ICES VCE=400V, VBE=0 VCE=330V, VBE=0 VCE=250V, VBE=0 VCE=200V, VBE=0 BU407 BU406 BU407 BU406 BU407 Collector Cut off Current TEST CONDITION Tc=150ºC VCE=250V, VBE Continental Device India
Original
C-120
Abstract: \ BU406 BU406H/BU408 30E » HORIZONTAL TV DEFLECTORS DESCRIPTION The BU406, BU406H, and BU408 are , Ti Junction Temperature 150 °C December 1988 1/5 285 BU406/BU406H/BU408 M , = 5A for BU406H l0 = 5 A for BU408 le = 6A for BU406 lo = 5A for BU406H le = 5A for BU408 , SGS-THOMSON â' 7 # mesBJEsmswces A m TWSB? BU406/BU406H/BU408 Q02Ã"533 b â  Base-emitter , ® _7J2g5 3 7 0055535 APPLICATION INFORMATION BU406/BU406H/BU408 T 3 0E D S G S-TH0MS0N -
OCR Scan
BU406H/BU408 BU406/BU406H/BU408
Abstract: BU406, BU407 NPN SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power Innovations Limited, UK , otherwise noted) RATING Collector-base voltage ( lE = 0) BU406 BU407 BU406 BU407 BU406 BU407 V CEO V CEX , all parameters. BU406, BU407 NPN SILICON POWER TRANSISTORS AUG UST 1978 - REVISED MARCH 1997 , A lB = 0 > O MIN 140 BU406 BU407 BU406 BU407 TYP MAX UNIT V breakdown voltage 5 , C Û > II LU C Û > II LU C Û O O Tc Tc = = 150°C 150°C BU406 BU407 Em itter cut-off -
OCR Scan
Y parameters of transistors T0-220
Abstract: SavantIC Semiconductor Product Specification BU406 BU407 Silicon NPN Power Transistors , ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BU406 VCBO Collector-base voltage 200 Open base BU407 VEBO V 330 BU406 Collector-emitter voltage Emitter-base voltage UNIT 400 , to case MAX UNIT 2.08 /W SavantIC Semiconductor Product Specification BU406 , VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS BU406 MIN TYP -
Original
Abstract: Device Package Shipping BU406 TO-220AB 50 Units / Rail BU406G TO-220AB (Pb-Free , BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for , Collector-Emitter Voltage Rating BU406 BU407 VCEO 200 150 Vdc Collector-Emitter Voltage BU406 BU407 VCEV 400 330 Vdc Collector-Base Voltage BU406 BU407 VCBO 400 330 Vdc , Components Industries, LLC, 2009 May, 2009 - Rev. 8 1 Publication Order Number: BU406/D 10 0.1 ON Semiconductor
Original
BU407G BU406/D
Abstract: BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak , Operating junction temperature range Storage temperature range NOTE SYM B O L BU406 BU407 BU406 BU407 BU406 BU407 V CBO VCEX V CEO VALUE 400 330 400 330 200 150 UNIT V V V VEB , %. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BU406 , mA MIN IB = 0 TYP MAX 140 V VCE = 400 V VBE = 0 BU406 VCE = 330 V ICES -
Original
Abstract: and turn-off times. 77QR AR A 0 ,1 1 1 0 ,q IAI I 100 BU406. 1/10 10:1 , Product specification Silicon diffused power transistors DESCRIPTION BU406/BU407 QUICK , BU407 DESCRIPTION 400 BU406 PINNING PIN UNIT BU406 VcESM MAX , 0023223 5CH « A P X tRE J > Product specification Philips Semiconductors BU406/BU407 , 134). MIN. MAX. UNIT - 400 V - 330 V BU406 _ 200 V BU407 - -
OCR Scan
MBB012 S3T31 7Z94472 S3131
Abstract: BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for , Collectorâ'Emitter Voltage BU406 BU407 VCEO 200 150 Vdc Collectorâ'Emitter Voltage BU406 BU407 VCEV 400 330 Vdc Collectorâ'Base Voltage BU406 BU407 VCBO 400 330 Vdc VEBO , reliability. ORDERING INFORMATION Device Package Shipping BU406 TOâ'220AB 50 Units / Rail BU406G TOâ'220AB (Pbâ'Free) 50 Units / Rail BU407 TOâ'220AB 50 Units / Rail BU407G ON Semiconductor
Original
Abstract: .3 Waveforms for fail, storage and turn-off times. hFE I 0,1 1 BU406. Vce=5V;T,= 25°C. Fig.4 DC current gain, typical values. vCEsat (VI BU406. Ic/Ia = 10; T, = 25 °C. Fig.5 Collector-emitter saturation , , motor control systems, etc, PINNING BU406/BU407 T- // QUICK REFERENCE DATA PIN DESCRIPTION 1 , peak value; BU406 VB6 = 0 400 V BU407 330 V VcEO collector-emitter voltage open base BU406 , Silicon diffused power transistors BU406/BU407 LIMITING VALUES In accordance with the Absolute Maximum -
OCR Scan
regulator 4468 Transistor 80139 12vk flyback transformer philips DU406
Abstract: Voltage : BU406 : BU406H : BU408 Max. 5 100 1 Units mA uA mA VBE = 6V, IC = 0 1 mA , Saturation Voltage : BU406 : BU406H : BU408 IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A IC = 6A, IB = 1.2A , Turn OFF Time VBE(sat) : BU406 : BU406H : BU408 ©2000 Fairchild Semiconductor International , BU406/406H/408 BU406/406H/408 High Voltage Switching · Use In Horizontal Deflection Output , us us Rev. A, February 2000 BU406/406H/408 Typical Characteristics 5 00m A IB = Fairchild Semiconductor
Original
BU406/406H/408
Abstract: BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A , ) Collector-emitter voltage (VBE = -2 V) Collector-emitter voltage (IB = 0) Emitter-base voltage BU406 BU407 BU406 BU407 BU406 BU407 V CBO VCEX VCEO VALUE 400 330 400 330 200 150 UNIT V V V , Specifications are subject to change without notice. 1 BU406, BU407 NPN SILICON POWER TRANSISTORS , 0 BU406 0.1 cut-off current VCE = 200 V VBE = 0 BU407 0.1 VBE = 0 TC = Bourns
Original
2N6191 2N5337 BY205 TIP31 TIP32
Abstract: BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A , ) Collector-emitter voltage (VBE = -2 V) Collector-emitter voltage (IB = 0) Emitter-base voltage BU406 BU407 BU406 BU407 BU406 BU407 V CBO VCEX VCEO VALUE 400 330 400 330 200 150 UNIT V V V , Specifications are subject to change without notice. 1 BU406, BU407 NPN SILICON POWER TRANSISTORS , 0 BU406 0.1 cut-off current VCE = 200 V VBE = 0 BU407 0.1 VBE = 0 TC = Bourns
Original
to220 5 lead plastic TRANSISTOR TIP31
Abstract: BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak , noted) RATING Collector-base voltage (IE = 0) BU406 Emitter-base voltage Continuous collector , ) Collector-emitter voltage (IB = 0) SYMBOL BU406 BU407 BU406 BU407 VCEX V CEO VEB IC VALUE , subject to change without notice. 1 BU406, BU407 NPN SILICON POWER TRANSISTORS electrical , BU406 0.1 cut-off current VCE = 200 V VBE = 0 BU407 0.1 VBE = 0 TC = 150Â Bourns
Original
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BU406/D NPN Power Transistors , Saturation Voltage: VQE(sat) = 1 V (max) @ 5 A Packaged in Compact JEDEC T O -220A B BU406 BU407 7 , VCEO VCEV VCBO Vebo ic BU406 200 400 400 6 7 10 15 4 60 0.48 BU407 150 330 330 Unit Vdc Vdc , EB = 6 Vdc, Iq = 0) BU406, BU407 'e b o BU406 BU407 v CEO(sus) 200 150 - - Vdc Symbol Min , (continued) REV 2 © M otorola, Inc. 1995 ($ J M O T O R O L A BU406 BU407 ELECTRICAL -
OCR Scan
Abstract: TEXAS INSTR -COPTO} ba »F| 0^1721, GG3bb35 D Ã"Ã"61726 TEXAS INSTR (OPTO) 62C 36635 BU406 , °C case temperature (unless otherwise noted) BU406 BU407 Collector-base voltage 400 V 330 V , |flTbl7Bt: DQ3titi3ti 5 iNSTR (OPTDT BU406, BU407 N-P-N SILICON POWER TRANSISTORS 62C 36636 D T , 30 mA, Ib = 0 140 v Ices VCE = 400v, VBE = 0 BU406 5 mA VCE = 250 v, vBE = 0 0.1 vce = 2so v , '¢ DALLAS. TEXAS 75265 TEXAS INSTR -COPTO} ^ »E |äc]t317at, D03titi37 4 62C 36637 D BU406, BU407 -
OCR Scan
N-P-N SILICON POWER TRANSISTORS t317 texas transistors 110-D T-33-/ T-33-//
Abstract: 91-11-2579 9569, 2579 5290 e-mail sales@cdil.com www.cdil.com www.cdilsemi.com BU406_407 Rev_1 281102E , PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package Horizontal Deflection Output Stages , Voltage BU406 BU407 UNIT 200 150 V Collector Base Voltage VCBO 400 330 V , ) DESCRIPTION SYMBOL Collector Emitter (sus) Voltage *VCEO(sus) IC=100mA, IB=0 BU406 ICES VCE=400V, VBE=0 VCE=330V, VBE=0 VCE=250V, VBE=0 VCE=200V, VBE=0 BU407 BU406 BU407 BU406 Continental Device India
Original
IC7A
Abstract: , lB1=-lB2= 0.6A, L=150 uH) 0.75 J (1) Pulse Test: Pulse width ^ 300 us , Duty Cycle S 2.0% BU406.BU407 , BU406- BU407- 5 1 2 5 10 20 50 100 200 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) There are two , Voltage - VCEV = 330 V (Min.) - BU407 = 400 V (Min.) - BU406 * Low Saturation Voltage VCEJsafl=10V(Max) @'c=5 0A * Fast Switching Speed: tf=0.75 us (Max) MAXIMUM RATINGS NPN BU406 BU407 Characteristic Symbol BU406 BU407 Unit Collector-Emitter Voltage VcEO 200 150 V Collector-Emitter Voltage VcEV 400 330 -
OCR Scan
1462, TRANSISTOR
Abstract: Saturation Voltage : BU406 : BU406H : BU408 Ie b o V be = 6 V , lc = 0 V c E (s a t) lc =5A, Ib = 0.5A lc = 5A, lB = 0.8A lc = 6A, lB= 1.2A Base Emitter Saturation Voltage : BU406 : BU406H , = 1.2A 10 0.75 0.4 0.4 MHz uS uS uS BU406 . BU406H : BU408 485 S ELECTRONICS BU406/406H/408 STATIC CHARACTERISTIC NPN EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN V«(V), CO , BU406/406H/408 HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE NPN EPITAXIAL -
OCR Scan
transistor BU408
Abstract: BU406, BU407 NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK q , voltage (V BE = -2 V) Collector-emitter voltage (IB = 0) SYMBOL BU406 BU407 BU406 BU407 BU406 , BU406, BU407 NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical , VBE = 0 BU406 V CE = 330 V ICES VBE = 0 BU407 5 Collector-emitter V CE = 250 V VBE = 0 BU406 0.1 cut-off current V CE = 200 V VBE = 0 BU407 0.1 5 V CE = Power Innovations
Original
TIP32 applications
Abstract: BU406 / 406H / 408 NPN Epitaxial Silicon Transistor Features â'¢ High-Voltage Switching â'¢ Use , Information Part Number Marking Package Packing Method BU406 BU406 TO-220 3L Bulk BU406TU BU406 TO-220 3L Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum , Semiconductor Corporation BU406 / 406H / 408 Rev. 1.2.0 www.fairchildsemi.com 1 BU406 / 406H / 408 â , 400 V, VBE = 0 ICES Parameter Collector-Emitter Saturation Voltage BU406 IC = 5 A, IB = Fairchild Semiconductor
Original
Abstract: BU406 NPN Epitaxial Silicon Transistor Features Description â'¢ High-Voltage Capability The BU406 is a 400 V 7 A Silicon Epitaxial Planar NPN Transistor. The BU406 is designed for high , .Emitter Ordering Information Part Number Marking BU406 BU406 Packing Method TO-220 3L BU406 , Semiconductor Corporation BU406 Rev. 1.2.1 www.fairchildsemi.com 1 BU406 â'" NPN Epitaxial Silicon , Semiconductor Corporation BU406 Rev. 1.2.1 Units 5 100 VCE = 400 V, VBE = 0 VCE = 250 V, VBE = 0 Fairchild Semiconductor
Original
Showing first 20 results.