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BU4069UB ROHM Semiconductor Inverter, 4000/14000/40000 Series, 6-Func, 1-Input, CMOS, PDIP14, ROHS COMPLIANT, DIP-14 visit Digikey Buy
BU4069UBF-E2 ROHM Semiconductor Inverter, 4000/14000/40000 Series, 6-Func, 1-Input, CMOS, PDSO14, ROHS COMPLIANT, SOP-14 visit Digikey Buy
BU4066BCFV-E2 ROHM Semiconductor SPST, 4 Func, 1 Channel, CMOS, PDSO14, ROHS COMPLIANT, SSOP-14 visit Digikey Buy
BU4069UBFV-E2 ROHM Semiconductor Inverter, 4000/14000/40000 Series, 6-Func, 1-Input, CMOS, PDSO14, ROHS COMPLIANT, SSOP-14 visit Digikey Buy
BU4066BC ROHM Semiconductor SPST, 4 Func, 1 Channel, CMOS, PDIP14, ROHS COMPLIANT, DIP-14 visit Digikey Buy
BU4066BCF-E2 ROHM Semiconductor SPST, 4 Func, 1 Channel, CMOS, PDSO14, ROHS COMPLIANT, SOP-14 visit Digikey Buy

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Part : BU406 Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : - Best Price : €0.2770 Price Each : €0.4488
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BU406 Datasheet

Part Manufacturer Description PDF Type
BU406 Bourns NPN SILICON POWER TRANSISTORS Original
BU406 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
BU406 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BU4-06 Frontier Electronics 4A SILICON SINGLE-PHASE BRIDGE RECTIFIER Original
BU406 Motorola 7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS Original
BU406 On Semiconductor BU406 - TRANSISTOR 7 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-220AB, CASE 221A-09, 3 PIN, BIP General Purpose Power Original
BU406 On Semiconductor NPN Power Transistors Original
BU406 Philips Semiconductors Silicon Diffused Power Transistor Original
BU406 Power Innovations NPN SILICON POWER TRANSISTORS Original
BU406 Sinyork Mini size of Discrete semiconductor elements Original
BU406 STMicroelectronics SILICON NPN SWITCHING TRANSISTOR Original
BU406 STMicroelectronics NPN Epitaxial Silicon Transistor Original
BU406 USHA NPN, horizontal deflection transistor. For horizontal deflection output stages of TVs ahd CRTs. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ieb = 7Adc, PD = 60W. Original
BU406 Various Russian Datasheets Transistor Original
BU406 Wing Shing Computer Components NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) Original
BU406 Boca Semiconductor NPN POWER TRANSISTOR Scan
BU406 Central Semiconductor NPN Silicon Power Transistor, TO-220 Scan
BU406 Central Semiconductor Power Transistors Scan
BU406 Continental Device India Semiconductor Device Data Book 1996 Scan
BU406 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan
Showing first 20 results.

BU406

Catalog Datasheet MFG & Type PDF Document Tags

BU406

Abstract: BU407 3 V into its flyback position. Fig.3 Waveforms for fall, storage and turn-off times. "FE BU406. Fig.4 DC current gain, typical values. VcEsat (V) BU406. Ic/lg =10; T,= 25 °C. Fig , _Product specification Silicon diffused power transistors BU406/BU407 DESCRIPTION High-voltage , voltage peak value; BU406 Vbe = 0 400 V BU407 330 V VcEO collector-emitter voltage open base BU406 200 V BU407 150 V VoE». collector-emitter saturation voltage 1 V >0 collector current DC
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transistor BU406 bu406 ru 8U407 BU406/BU407 MEB012 MSA060

BU406

Abstract: bu407 BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak Collector , ) Emitter-base voltage Continuous collector current BU407 BU406 BU406 BU406 SYMBOL V CBO VCEX V CEO VEB ICM Ptot , %. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BU406 , and 3) f = 1 MHz f = 1 MHz (see Note 4) 6 60 12 20 1 1.2 V V MHz pF TC = 150°C TC = 150°C BU406 BU407 BU406 BU407 BU406 BU407 TEST CONDITIONS MIN 140 5 5 0.1 0.1 1 1 1 mA mA TYP MAX UNIT V VCE = 400 V
Bourns
Original
TCD124AA TCD124AB TCD124AC SAD124AA

bu406

Abstract: www.cdilsemi.com BU406_407 Rev_1 281102E Continental Device India Limited Data Sheet Page 4 of 4 , PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package Horizontal Deflection Output Stages , Voltage BU406 BU407 UNIT 200 150 V Collector Base Voltage VCBO 400 330 V , =100mA, IB=0 BU406 ICES VCE=400V, VBE=0 VCE=330V, VBE=0 VCE=250V, VBE=0 VCE=200V, VBE=0 BU407 BU406 BU407 BU406 BU407 Collector Cut off Current TEST CONDITION Tc=150ºC VCE=250V, VBE
Continental Device India
Original
C-120

BU408

Abstract: \ BU406 BU406H/BU408 30E » HORIZONTAL TV DEFLECTORS DESCRIPTION The BU406, BU406H, and BU408 are , Ti Junction Temperature 150 °C December 1988 1/5 285 BU406/BU406H/BU408 M , = 5A for BU406H l0 = 5 A for BU408 le = 6A for BU406 lo = 5A for BU406H le = 5A for BU408 , SGS-THOMSON â' 7 # mesBJEsmswces A m TWSB? BU406/BU406H/BU408 Q02Ã"533 b â  Base-emitter , ® _7J2g5 3 7 0055535 APPLICATION INFORMATION BU406/BU406H/BU408 T 3 0E D S G S-TH0MS0N
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BU406H/BU408 BU406/BU406H/BU408

BU406

Abstract: bu407 BU406, BU407 NPN SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power Innovations Limited, UK , otherwise noted) RATING Collector-base voltage ( lE = 0) BU406 BU407 BU406 BU407 BU406 BU407 V CEO V CEX , all parameters. BU406, BU407 NPN SILICON POWER TRANSISTORS AUG UST 1978 - REVISED MARCH 1997 , A lB = 0 > O MIN 140 BU406 BU407 BU406 BU407 TYP MAX UNIT V breakdown voltage 5 , C Û > II LU C Û > II LU C Û O O Tc Tc = = 150°C 150°C BU406 BU407 Em itter cut-off
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Y parameters of transistors T0-220

BU406

Abstract: BU407 SavantIC Semiconductor Product Specification BU406 BU407 Silicon NPN Power Transistors , ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BU406 VCBO Collector-base voltage 200 Open base BU407 VEBO V 330 BU406 Collector-emitter voltage Emitter-base voltage UNIT 400 , to case MAX UNIT 2.08 /W SavantIC Semiconductor Product Specification BU406 , VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS BU406 MIN TYP
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Original

BU406G

Abstract: transistor BU406 Device Package Shipping BU406 TO-220AB 50 Units / Rail BU406G TO-220AB (Pb-Free , BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for , Collector-Emitter Voltage Rating BU406 BU407 VCEO 200 150 Vdc Collector-Emitter Voltage BU406 BU407 VCEV 400 330 Vdc Collector-Base Voltage BU406 BU407 VCBO 400 330 Vdc , Components Industries, LLC, 2009 May, 2009 - Rev. 8 1 Publication Order Number: BU406/D 10 0.1
ON Semiconductor
Original
BU407G BU406/D

BU406

Abstract: BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak , Operating junction temperature range Storage temperature range NOTE SYM B O L BU406 BU407 BU406 BU407 BU406 BU407 V CBO VCEX V CEO VALUE 400 330 400 330 200 150 UNIT V V V VEB , %. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BU406 , mA MIN IB = 0 TYP MAX 140 V VCE = 400 V VBE = 0 BU406 VCE = 330 V ICES
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Original
Abstract: and turn-off times. 77QR AR A 0 ,1 1 1 0 ,q IAI I 100 BU406. 1/10 10:1 , Product specification Silicon diffused power transistors DESCRIPTION BU406/BU407 QUICK , BU407 DESCRIPTION 400 BU406 PINNING PIN UNIT BU406 VcESM MAX , 0023223 5CH « A P X tRE J > Product specification Philips Semiconductors BU406/BU407 , 134). MIN. MAX. UNIT - 400 V - 330 V BU406 _ 200 V BU407 - -
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MBB012 S3T31 7Z94472 S3131

BU407

Abstract: BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for , Collectorâ'Emitter Voltage BU406 BU407 VCEO 200 150 Vdc Collectorâ'Emitter Voltage BU406 BU407 VCEV 400 330 Vdc Collectorâ'Base Voltage BU406 BU407 VCBO 400 330 Vdc VEBO , reliability. ORDERING INFORMATION Device Package Shipping BU406 TOâ'220AB 50 Units / Rail BU406G TOâ'220AB (Pbâ'Free) 50 Units / Rail BU407 TOâ'220AB 50 Units / Rail BU407G
ON Semiconductor
Original

regulator 4468

Abstract: transistor BU406 .3 Waveforms for fail, storage and turn-off times. hFE I 0,1 1 BU406. Vce=5V;T,= 25°C. Fig.4 DC current gain, typical values. vCEsat (VI BU406. Ic/Ia = 10; T, = 25 °C. Fig.5 Collector-emitter saturation , , motor control systems, etc, PINNING BU406/BU407 T- // QUICK REFERENCE DATA PIN DESCRIPTION 1 , peak value; BU406 VB6 = 0 400 V BU407 330 V VcEO collector-emitter voltage open base BU406 , Silicon diffused power transistors BU406/BU407 LIMITING VALUES In accordance with the Absolute Maximum
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regulator 4468 Transistor 80139 flyback transformer philips 12vk DU406

BU406

Abstract: BU406H Voltage : BU406 : BU406H : BU408 Max. 5 100 1 Units mA µA mA VBE = 6V, IC = 0 1 mA , Saturation Voltage : BU406 : BU406H : BU408 IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A IC = 6A, IB = 1.2A , Turn OFF Time VBE(sat) : BU406 : BU406H : BU408 ©2000 Fairchild Semiconductor International , BU406/406H/408 BU406/406H/408 High Voltage Switching · Use In Horizontal Deflection Output , µs µs Rev. A, February 2000 BU406/406H/408 Typical Characteristics 5 00m A IB =
Fairchild Semiconductor
Original
BU406/406H/408

BU407

Abstract: transistor BU406 BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A , ) Collector-emitter voltage (VBE = -2 V) Collector-emitter voltage (IB = 0) Emitter-base voltage BU406 BU407 BU406 BU407 BU406 BU407 V CBO VCEX VCEO VALUE 400 330 400 330 200 150 UNIT V V V , Specifications are subject to change without notice. 1 BU406, BU407 NPN SILICON POWER TRANSISTORS , 0 BU406 0.1 cut-off current VCE = 200 V VBE = 0 BU407 0.1 VBE = 0 TC =
Bourns
Original
2N6191 2N5337 BY205 TIP31 TIP32

BU406

Abstract: 2N5337 BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A , ) Collector-emitter voltage (VBE = -2 V) Collector-emitter voltage (IB = 0) Emitter-base voltage BU406 BU407 BU406 BU407 BU406 BU407 V CBO VCEX VCEO VALUE 400 330 400 330 200 150 UNIT V V V , Specifications are subject to change without notice. 1 BU406, BU407 NPN SILICON POWER TRANSISTORS , 0 BU406 0.1 cut-off current VCE = 200 V VBE = 0 BU407 0.1 VBE = 0 TC =
Bourns
Original
to220 5 lead plastic TRANSISTOR TIP31
Abstract: BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak , noted) RATING Collector-base voltage (IE = 0) BU406 Emitter-base voltage Continuous collector , ) Collector-emitter voltage (IB = 0) SYMBOL BU406 BU407 BU406 BU407 VCEX V CEO VEB IC VALUE , subject to change without notice. 1 BU406, BU407 NPN SILICON POWER TRANSISTORS electrical , BU406 0.1 cut-off current VCE = 200 V VBE = 0 BU407 0.1 VBE = 0 TC = 150Â Bourns
Original
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BU406/D NPN Power Transistors , Saturation Voltage: VQE(sat) = 1 V (max) @ 5 A Packaged in Compact JEDEC T O -220A B BU406 BU407 7 , VCEO VCEV VCBO Vebo ic BU406 200 400 400 6 7 10 15 4 60 0.48 BU407 150 330 330 Unit Vdc Vdc , EB = 6 Vdc, Iq = 0) BU406, BU407 'e b o BU406 BU407 v CEO(sus) 200 150 - - Vdc Symbol Min , (continued) REV 2 © M otorola, Inc. 1995 ($ J M O T O R O L A BU406 BU407 ELECTRICAL -
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BU406

Abstract: BU407 TEXAS INSTR -COPTO} ba »F| 0^1721, GG3bb35 D Ã"Ã"61726 TEXAS INSTR (OPTO) 62C 36635 BU406 , °C case temperature (unless otherwise noted) BU406 BU407 Collector-base voltage 400 V 330 V , |flTbl7Bt: DQ3titi3ti 5 iNSTR (OPTDT BU406, BU407 N-P-N SILICON POWER TRANSISTORS 62C 36636 D T , 30 mA, Ib = 0 140 v Ices VCE = 400v, VBE = 0 BU406 5 mA VCE = 250 v, vBE = 0 0.1 vce = 2so v , '¢ DALLAS. TEXAS 75265 TEXAS INSTR -COPTO} ^ »E |äc]t317at, D03titi37 4 62C 36637 D BU406, BU407
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N-P-N SILICON POWER TRANSISTORS t317 texas transistors 110-D T-33-/ T-33-//

BU407

Abstract: transistor BU406 91-11-2579 9569, 2579 5290 e-mail sales@cdil.com www.cdil.com www.cdilsemi.com BU406_407 Rev_1 281102E , PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package Horizontal Deflection Output Stages , Voltage BU406 BU407 UNIT 200 150 V Collector Base Voltage VCBO 400 330 V , ) DESCRIPTION SYMBOL Collector Emitter (sus) Voltage *VCEO(sus) IC=100mA, IB=0 BU406 ICES VCE=400V, VBE=0 VCE=330V, VBE=0 VCE=250V, VBE=0 VCE=200V, VBE=0 BU407 BU406 BU407 BU406
Continental Device India
Original
IC7A

BU407

Abstract: 1462, TRANSISTOR , lB1=-lB2= 0.6A, L=150 uH) 0.75 J (1) Pulse Test: Pulse width ^ 300 us , Duty Cycle S 2.0% BU406.BU407 , BU406- BU407- 5 1 2 5 10 20 50 100 200 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) There are two , Voltage - VCEV = 330 V (Min.) - BU407 = 400 V (Min.) - BU406 * Low Saturation Voltage VCEJsafl=10V(Max) @'c=5 0A * Fast Switching Speed: tf=0.75 us (Max) MAXIMUM RATINGS NPN BU406 BU407 Characteristic Symbol BU406 BU407 Unit Collector-Emitter Voltage VcEO 200 150 V Collector-Emitter Voltage VcEV 400 330
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1462, TRANSISTOR

bu406

Abstract: bu408 Saturation Voltage : BU406 : BU406H : BU408 Ie b o V be = 6 V , lc = 0 V c E (s a t) lc =5A, Ib = 0.5A lc = 5A, lB = 0.8A lc = 6A, lB= 1.2A Base Emitter Saturation Voltage : BU406 : BU406H , = 1.2A 10 0.75 0.4 0.4 MHz uS uS uS BU406 . BU406H : BU408 485 S ELECTRONICS BU406/406H/408 STATIC CHARACTERISTIC NPN EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN V«(V), CO , BU406/406H/408 HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE NPN EPITAXIAL
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transistor BU408

transistor TIP31

Abstract: TIP32 applications BU406, BU407 NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK q , voltage (V BE = -2 V) Collector-emitter voltage (IB = 0) SYMBOL BU406 BU407 BU406 BU407 BU406 , BU406, BU407 NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical , VBE = 0 BU406 V CE = 330 V ICES VBE = 0 BU407 5 Collector-emitter V CE = 250 V VBE = 0 BU406 0.1 cut-off current V CE = 200 V VBE = 0 BU407 0.1 5 V CE =
Power Innovations
Original
TIP32 applications
Abstract: BU406 / 406H / 408 NPN Epitaxial Silicon Transistor Features â'¢ High-Voltage Switching â'¢ Use , Information Part Number Marking Package Packing Method BU406 BU406 TO-220 3L Bulk BU406TU BU406 TO-220 3L Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum , Semiconductor Corporation BU406 / 406H / 408 Rev. 1.2.0 www.fairchildsemi.com 1 BU406 / 406H / 408 â , 400 V, VBE = 0 ICES Parameter Collector-Emitter Saturation Voltage BU406 IC = 5 A, IB = Fairchild Semiconductor
Original
Abstract: BU406 NPN Epitaxial Silicon Transistor Features Description â'¢ High-Voltage Capability The BU406 is a 400 V 7 A Silicon Epitaxial Planar NPN Transistor. The BU406 is designed for high , .Emitter Ordering Information Part Number Marking BU406 BU406 Packing Method TO-220 3L BU406 , Semiconductor Corporation BU406 Rev. 1.2.1 www.fairchildsemi.com 1 BU406 â'" NPN Epitaxial Silicon , Semiconductor Corporation BU406 Rev. 1.2.1 Units 5 100 VCE = 400 V, VBE = 0 VCE = 250 V, VBE = 0 Fairchild Semiconductor
Original
Showing first 20 results.