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BU326A Datasheet

Part Manufacturer Description PDF Type
BU326A Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original
BU326A STMicroelectronics HIGH VOLTAGE NPN SILICON POWER TRANSISTOR Original
BU326A STMicroelectronics HIGH VOLTAGE NPN SILICON POWER TRANSISTOR Original
BU326A Wing Shing Computer Components NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) Original
BU326A Boca Semiconductor HIGH VOLTAGE POWER TRANSISTORS Scan
BU326A Continental Device India TO-3 Power Package Transistors Scan
BU326A Continental Device India Semiconductor Device Data Book 1996 Scan
BU326A Continental Device India TO-3 Power Package Transistors Scan
BU326A Crimson Semiconductor MULTIEPITAXIAL Transistors Scan
BU326A Diode Transistor TO-3 / Various Transistor Selection Guide Scan
BU326A Diode Transistor Transistor Short Form Data - TO-3 Scan
BU326A LesAg HBB Power Transistors for Horizontal Deflection and Television Switch-mode Power Supply Scan
BU326A Mospec High Voltage Power Transistor Scan
BU326A Mospec POWER TRANSISTORS(6A,375-400V,75W) Scan
BU326A Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BU326A Motorola Switchmode Datasheet Scan
BU326A Motorola European Master Selection Guide 1986 Scan
BU326A Mullard Quick Reference Guide 1977/78 Scan
BU326A N/A Basic Transistor and Cross Reference Specification Scan
BU326A N/A Shortform Transistor PDF Datasheet Scan
Showing first 20 results.

BU326A

Catalog Datasheet MFG & Type PDF Document Tags

DK53

Abstract: dk52 BU326A BU208A 2N3055 BDW51C BDW51C BUX80 BUX80 BUX80 BUX80 BUX80 BUX80 BUX80 BUX80 2N3055 BUV50 BUV21 BUV21 TIP31C TIP31A TIP31C BDW51C BDW51C BU326A BUX48A BU326A BU326A BU326A BU326A BU326A BU326A Industry standard 2SC931 2SC932 2SC935 2SC936 2SC937 2SC939 2SC940 , nearest preferred BD241A BD241A BUX80 BU208A BU208A BU326A BU326A BDW51C BU208A BU208A BU208A , BU208A BU326A BD243B BD243C BD243B BD243C BUV50 BU326A BUV50 BUV21 BU326A BU326A BU208A
STMicroelectronics
Original
MJ2955 BUL128 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025

bu326a

Abstract: bu326 7^537 0056557 0 â  *T" 3>~S-\3 SGS-THOMSON M tg[^(»[i(M ©i«S_ S G S-TH0MS0N BU326 BU326A 3QE P HIGH VOLTAGE POWER SWITCH DESC RIPTIO N The BU326 and BU326A are silicon , system. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BU326A BU326 Unit VcES , )* Collector-emitter Sustaining Voltage (I b =0) I ebo Max. for BU326A for BU326 V oe = 900V V0E = 900V V , BU326A VEB =10V lc = 100mA V V 325 400 for BU326 for BU326A VcE(sat
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U326-BU326A BU326-BU326A BU326-B U326A

BU326A

Abstract: BU326 BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE NPN , EQUIPMENT s 1 2 DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO , to 200 o C 200 o C 1/4 BU326A THERMAL DATA R thj-case Thermal Resistance , µs, duty cycle 1.5 % 2/4 V CE = 5 V 25 BU326A TO-3 MECHANICAL DATA mm DIM. MIN , N B V E G U D R P003F 3/4 BU326A Information furnished is believed
STMicroelectronics
Original

DK53

Abstract: dk52 BD235 2N5339 2N5339 2N5339 BDW51C BDW51C BDW51C BDW51C BDW51C BU326A BU208A 2N3055 BDW51C , TIP31C TIP31A TIP31C BDW51C BDW51C BU326A BUX48A BU326A BU326A BU326A BU326A BU326A BU326A BD241A BD241A BUX80 BU208A BU208A BU326A BU326A BDW51C BU208A BU208A BU208A BU208A BU208A TIP31A TIP31A BU208A BDW51C BU208A 2N5657 2N5657 MJE182 BD237 BU208A BU208A BU208A BU326A , NEAREST PREFERRED BD243B BD243C BD243B BD243C BUV50 BU326A BUV50 BUX41 BU326A BU326A BU208A
STMicroelectronics
Original
BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD292 2N3026 2N3076 2N3171 2N3172 2N3173 2N3174

bu326

Abstract: BU326A SGSTHO M SON BU326 BU326A HIGH VOLTAGE POWER SWITCH D E S C R IP T IO N The BU326 and BU326A , se BU326A 900 400 10 6 8 3 BU326 800 3 25 Unit V V V A A A s 25°C 75 - 65 to 200 200 , BU326A Ò ^ Il II < L O C D LO Od Min. Typ. Max. 1 1 2 2 10 Unit I < < ' E E I fo r BU326A fo r BU326 fo r BU326 fo r BU326A < E < E mA Iebo E m itter C utoff C urrent (lc = 0 , 2/4 7 SCS-THOMSON " 7# m cb bhu iottì ® « « * 282 3Ü326-BU326A Thermal Transient
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326-BU326A

BU326

Abstract: BU326A BU326,BU326A N-P-N SILICON POWER TRANSISTORS TT OCTOBER 1982 - REVISED OCTOBER 1984 60 W at 25 , absolute maximum ratings at 25°C case temperature (unless otherwise noted) BU326 BU326A Collector-base , , BU326A N-P-N SILICON POWER TRANSISTORS 62C 36630 D T-33-// electrical characteristics at 25°C case , 0.1 A, L = 25 mH, See Note 2 BU326A 400 Ices VCE = 800 V, VBE = O BU326 1 mA VCE = 800 V, VBE = 0, TC = 125°C 2 VQE = 900 V, VBE = 0 BU326A 1 VCE = 900 V, VBE = O, TC = 125«C 2 'ebo VEB =
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3S1726
Abstract: S G S -T H O M S O N iM m @ ignnCTisì«ii(Sgì BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . FAST SWITCHING SPEED APPLICATIONS: . POWER SUPPLIES . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 2 DESCRIPTION The BU326A is a silicon , -65 to 200 °C 200 °c 1/4 BU326A THERMAL DATA Therm al R esistance Ju n ctio n -ca , # SGS-THOMSON n B Å" B ® iiLieÂ¥ii(siraÃS V 25 BU326A TO-3 MECHANICAL DATA mm inch DIM -
OCR Scan

BU326

Abstract: BU326A SavantIC Semiconductor Product Specification BU326 BU326A Silicon NPN Power Transistors , 375 Open base BU326A VEBO V 900 BU326 Collector-emitter voltage Emitter-base voltage UNIT 800 Open emitter BU326A VCEO VALUE V 400 Open collector 10 V IC , BU326A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , . MAX UNIT 375 IC=0.1A; IB=0 BU326A V 400 VCEsat-1 Collector-emitter saturation
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Original

BU326A

Abstract: BU326 HIGH VOLTAGE POWER TRANSISTOR The BU326 and BU326A Type are a fast switching high voltage , : * Collector-Emitter Sustaining Voltage - vceo(sus) = 375 V (Min.) - BU326 * 400 V (Min.) - BU326A * Low , Semiconductor Corp. BSC http ://www.bocasemi.com Characteristic Symbol BU326 BU326A Unit Collector-Emitter , 25 50 75 100 125 150 175 200 Tc, TEMPERATURE('C) NPN BU326 BU326A 6 AMPERE POWER TRANSISTORS , G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 BU326, BU326A NPN ELECTRICAL
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BU326A

Abstract: BU326 BU326A ® HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s STMicroelectronics PREFERRED , INDUSTRIAL EQUIPMENT s DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec , -65 to 200 o C 200 o C 1/4 BU326A THERMAL DATA R thj-case Thermal , Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 V CE = 5 V 25 BU326A TO , 1.193 A P C O N B V E G U D R P003F 3/4 BU326A
STMicroelectronics
Original

lg crt tv circuit diagram

Abstract: lg crt tv diagram -I SGS-THOMSON BU326 IM Mû[kIig?i®lI]fgS . BU326A HIGH VOLTAGE POWER SWITCH ESCRIPTION ie BU326 and BU326A are silicon muitiepitaxîal ssa NPN transistors in Jedec TO-3 meta! case irticularly , Parameter Value Unit BU326A I BU326 VcES Collector-emitter Voltage (VBE = 0) 900 800 V VcEO , Collector Cutoff Current (VBE = 0) VCE = 900V for BU326A VCE = 900V for BU326 V0E = 900V Tcase = 125'C for BU326 V0e = 900V Tease = 1253C for BU326A 1 1 2 2 mA mA mA mA Iebo Emitter Cutoff Current (lc =0) VEB
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S-1357 BU406 BU406H BU408 3U406 lg crt tv circuit diagram lg crt tv diagram LG crt TV flyback transformer LG TV flyback transformer Transformer eht ctv BU406/BU406H/BU408 220S1

IR 92 0151

Abstract: transistor BU 109 1SE D | b3t.75S4 DOäMöQI M | BU326, BU326A T - " 2> 3-/3 E L E C T R IC A L C H A R A C T E R , Su stain in g Voltage { I C = 1 0 0 m A , l B = 0. L - 2 5 m H ) v C E O (sus) BU 326 BU326A 375 400 'C E S BU 326 BU326A 'C E S BU 326 BU326A 'E B O : 1 * 1 '0 2 .0 2 .0 i 1 1 .0 1 .0 Vdc C o , * 2% . 3-364 MO TORCLA SC XSTRS/R F 1EE D | b3fc.7254 00fl4fil0 0 | BU326, BU326A T '
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IR 92 0151 transistor BU 109 t 326 Transistor transistor BU 184 AN415A

B0411

Abstract: B0733 BDW51C BU326A BU208A 2N3055 BDW51C BDW51C BUX80 BUX80 BUX80 BUX80 BUX80 BUX80 BUX80 BUX80 2N3055 181 165 , PREFERRED RAGE BUV50 BUV21 BUV21 TIP31C TIP31A TIP31C BDW51C BDW51C BU326A BUX48A BU326A BU326A BU326A BU326A BU326A BU326A BD241A BD241A BUX80 BU208A BU208A BU326A BU326A BDW51C BU208A BU208A BU208A BU208A BU208A TIP31A TIP31A BU208A BDW51C BU208A 2N5657 2N5657 MJE182 BD237 BU208A BU208A BU208A BU326A BD243B , NEARESTPREFERRED RIGE BD243C BUV50 BU326A BUV50 BUV21 BU326A BU326A BU208A BU208A BUX48 BUX48 BUY69A BUY69A BU208A
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B0411 B0733 THD200F1 2N5415 REPLACEMENT TIP 2n3055 SGS-Thomson cross reference 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196

BU326A

Abstract: BU326 BU326A ® HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s STMicroelectronics PREFERRED , INDUSTRIAL EQUIPMENT DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO , -65 to 200 o C 200 o C 1/4 BU326A THERMAL DATA R t hj-ca se Thermal , Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 V CE = 5 V 25 BU326A TO , 1.193 A P C O N B V E G U D R P003F 3/4 BU326A
STMicroelectronics
Original

BU326

Abstract: BU326A BU326, BU326A NPN ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) (lc= 100 mA, lB = 0) BU326 BU326A ^CEO(SUS) 375 400 V Collector Cutoff Current (VCE = 800 V, VBE= 0 ) BU326 (VCE = 900 V, VBE = 0 ) BU326A 'CES 1.0 1.0 mA Emitter Cutoff Current (VEB=10V,IC = 0) 'ebo 10 mA ON CHARACTERISTICS (1) DC Current Gain (IC=1.0A,VCE = 5.0V) hFE 25(typ) Collector - Emitter
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40 amp collector current LB-21

BUV48I

Abstract: BU808DXI BU326A BU208A 2N3055 BDW51C BDW51C BUW34 BUW34 BUW34 BUW34 BUW34 BUW34 BUW34 BUW34 2N3055 , BDW51C BDW51C BU326A BUX48A BU326A BU326A BU326A BU326A BU326A BU326A BD241A BD241A BUW34 BU208 BU208 BU326A BU326A BDW51C BU208 MJE182 BU208 MJE182 BU208 BU208 BU208A BU208A TIP31A TIP31A BU208A BDW51C BU208 2N5657 2N5657 MJE182 2N4923 BU208 BU208 BU208 BU326A BD243B BD243C BD243B BD243C 2N5671 BU326A 2N5671 BUX41 * Product in Development please contact your
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BUV48I BU808DXI buv18a BD241CFI transistor 2SA1046 BUW52I 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235
Abstract: SGS-mOMSON MOgn®ia,ieiri®i0(Di BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR . FAST SWITCHING SPEED APPLICATIONS: . POWER SUPPLIES . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case particularly intended for switch-mode CTV supply system. TO , T| June 1997 1/2 207 BU326A THERMAL DATA R lh j- c : Therm al R esistance -
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5CC8H20

BU326

Abstract: BU326-BU326A TEXAS INSTR -COPTO} bâ DE IfliblTEt, 003t,t,acl S Ô 9 © t 7 26 TEXAS INSTR~ 62C 3 6 6 2 9 BU326, BU326A N-P-N SILICON POWER TRANSISTORS OCTO BER 19 82 - R E V ISE D OC TO BER 1 9 84 D f 60 W at 2 5 ° C Case Temperature 6 A Continuous Collector Current 8 A Peak , ) 62C 3 6 6 3 1 BU326, BU326A N-P-N SILICON POWER TRANSISTORS T - 3 S - M P A R A M E T ER M E A S , IN S T R {O PT O ] 62C 36632 T - - 2 > *> -() D BU326, BU326A N-P-N SILICON POWER
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st bux 331Z

BU326

Abstract: BU326A isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU326A DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max.) @ IC= 2.5A APPLICATIONS ·Designed for use in operating in color TV receivers chopper supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT , Semiconductor isc Silicon NPN Power Transistor BU326A ELECTRICAL CHARACTERISTICS TC=25 unless
INCHANGE Semiconductor
Original
NPN Transistor 1A 400V

BU326A Transistor

Abstract: ., U na. TELEPHONE: (973) 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BU326A Silicon NPN Power Transistor DESCRIPTION â'¢ Collector-Emitter Sustaining Voltage: V C EO(sus)=400V(Min) â'¢ Low Collector-Emitter Saturation Voltage:V C E(sat)=1.5V(Max.)@lc=2.5A APPLICATIONS â'¢ Designed for use in operating in color TV receivers chopper '*\, supplies. .3 J , Transistor BU326A ELECTRICAL CHARACTERISTICS Tc=25'C unless otherwise specified SYMBOL PARAMETER
New Jersey Semiconductor
Original
BU326A Transistor

BU326

Abstract: Itron 326A 7^537 0056557 0 â  *T" 3>~S-\3 SGS-THOMSON M tg[^(»[i(M ©i«S_ S G S-TH0MS0N BU326 BU326A 3QE P HIGH VOLTAGE POWER SWITCH DESC RIPTIO N The BU326 and BU326A are silicon , system. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BU326A BU326 Unit VcES , )* Collector-emitter Sustaining Voltage (I b =0) I ebo Max. for BU326A for BU326 V oe = 900V V0E = 900V V , BU326A VEB =10V lc = 100mA V V 325 400 for BU326 for BU326A VcE(sat
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Itron 326A SOLITRON DEVICES BU 2578

t 326 Transistor

Abstract: 326 Transistor BU326,BU326A N-P-N SILICON POWER TRANSISTORS TT OCTOBER 1982 - REVISED OCTOBER 1984 60 W at 25 , absolute maximum ratings at 25°C case temperature (unless otherwise noted) BU326 BU326A Collector-base , , BU326A N-P-N SILICON POWER TRANSISTORS 62C 36630 D T-33-// electrical characteristics at 25°C case , 0.1 A, L = 25 mH, See Note 2 BU326A 400 Ices VCE = 800 V, VBE = O BU326 1 mA VCE = 800 V, VBE = 0, TC = 125°C 2 VQE = 900 V, VBE = 0 BU326A 1 VCE = 900 V, VBE = O, TC = 125«C 2 'ebo VEB =
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Q62702-U268 326 Transistor BU 103 A transistor transistor BU 104 J 326 npn transistor w5 S23SL0S

transistor tt 2206

Abstract: TT 2206 transistor BU326A ® HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s STMicroelectronics PREFERRED , INDUSTRIAL EQUIPMENT DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO , -65 to 200 o C 200 o C 1/4 BU326A THERMAL DATA R t hj-ca se Thermal , Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 V CE = 5 V 25 BU326A TO , 1.193 A P C O N B V E G U D R P003F 3/4 BU326A
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transistor tt 2206 TT 2206 transistor transistor BU 102 transistor npn 326 W2206 D--03
Showing first 20 results.