BU111 INCHANGE Semiconductor isc Silicon NPN Power Transistor BU111 DESCRIPTION - Datasheet Archive

 

INCHANGE Semiconductor isc Silicon NPN Power Transistor BU111 DESCRIPTION ·Collector-Emitter Sustaining Voltag: VCEO(SUS)=

 

isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU111 BU111 DESCRIPTION ·Collector-Emitter Sustaining Voltag: VCEO(SUS)= 300V(Min) ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC= 2.5A APPLICATIONS ·Designed for use in color TV receivers chopper supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Repetitive 8 A IB Base Current 3 A PC Collector Power Dissipation @ TC=25 50 W TJ Junction Temperature 200 -65~200 B Tstg Storage Temperature Range isc Websitewww.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU111 BU111 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.4 V ICBO Collector Cutoff Current VCB= 400V; IE=0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 0.1 mA Current-Gain-Bandwidth Product IC= 0.5A ; VCE= 10V fT isc Websitewww.iscsemi.cn CONDITIONS 2 MIN TYP. MAX UNIT 200 V 6 V 10 MHz