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Part Manufacturer Description Datasheet BUY
ADS54T01IZAYR Texas Instruments 1-ch 750MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85 visit Texas Instruments
ADS54T04IZAYR Texas Instruments 2-ch 500MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85 visit Texas Instruments
ADS54T04IZAY Texas Instruments 2-ch 500MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85 visit Texas Instruments
ADS54T02IZAY Texas Instruments 2-ch 750MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85 visit Texas Instruments
ADS54T02IZAYR Texas Instruments 2-ch 750MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85 visit Texas Instruments
ADS54T01IZAY Texas Instruments 1-ch 750MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85 visit Texas Instruments

BTS 472 E

Catalog Datasheet MFG & Type PDF Document Tags

BTS 472 E

Abstract: v5n diode 472 SIEM ENS Inductive Load switch-off energy dissipation BTS 432 D2 ELoad < EL EL = 1/2 ' , SIEM ENS Smart Mighside Power Switch Features · · · · · · · · · · · · PROFET® BTS 432 D2 , Function Logic ground BTS 432 D2 Input, activates the power switch in case of logical high signal , Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified BTS 432 D2 Symbol min , disconnected or GND pulled up, V in = 0, see diagram page 472, T\ =-40.+150°C Turn-on time to 90% Vout
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OCR Scan
Abstract: 00^27^1 Semiconductor Group I I e â  ] 472 SIEMENS BTS 432 D2 Inductive Load switch-off , air. Semiconductor Group 467 fl235bOS OQ' ì ST S? 7^0 SIEMENS â  BTS 432 D2 , disconnected or A Nh h -(G D ig ) GND pulled up, Vin= 0, see diagram page 472, Ti =-40.+150°C Turn-on , b n 8f) b (u d V b(uret) b V b cp b (u ) AV b n e b (u d r) V b v0 b (o r) V re bb(o t , protection functions and circuit diagram page 472. Meassured without load. 7) Add 1s t , if 0, add -
OCR Scan

siemens BSM b2

Abstract: BTS 472 E Type bts 432D2 432E2 432F2 432I2 Logic version D E F I Overtemperature protection 7] >150 °C, latch , SIEMENS fl535b05 GCH27S5 Tis m PROFET® BTS 432 D2 Product Summary VLoad dump 80 V , BTS 432 D2 Electrical Characteristics Parameter and Conditions Symbol Values Unit at Tj = 25 °C , current (pin 5) while GND disconnected or GND pulled up, Vin= 0, see diagram page 472, 7] =-40.+150°C , diagram page 472. Meassured without load. 7) Add 1st, if 1st > 0. add An, if Vin>55 V Semiconductor
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OCR Scan
Q67060-S6201-A2 E3043 Q67060-S6201-A4 E3062 siemens BSM b2 BTS 472 E transistor RCA 467 B37 zener diode bts 43202 bts43202 BTS432D2 E3062A

410H2

Abstract: WN smd transistor . Semiconductor Group 472 SIEMENS Package and Ordering Code All dimensions in mm BTS 410H2 Standard , shorted to this pin Diagnostic feedback, low on failure Output to the load BTS 410H2 Input , Capabilities and Characteristics O n -s ta te resis tan ce (pin 3 to 5) h BTS 410H2 Symbol min , nnected or U in = mA G N D pulled up, l/b b=30 V , paqe 467 T u rn -o n tim e T u rn -o ff tim e 0, s e e d iagram to 9 0 % (/ out : to 1 0 % V0 ut : ton to II 15 5 - 60 50 |iS a =
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OCR Scan
WN smd transistor 410-H2 BTS410H2 Q67060-S6105-A2 Q67060-S6105-A3 Q67060-S6105-A4

diode zener ZD H2

Abstract: BTS410 Undervoltage restart of charge pump see diagram page 472 Vbb(ucp) 5.6 6.0 V Undervoltage hysteresis A Vbb , , dissipated energy in PROFET rs Eas= J Von(cl( * i(t) dt, approx. E*S= % * L * * CyJ^Jâ"¢^ >, see diagram , By Its Respective Manufacturer â I Ã235b05 00fllL.05 bl3 â  SIEMENS_ BTS 410 H2 Parameter and , zener voltage (increase of up to 1 V). 14) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for open load detection. 15) Low resistance short Vbb to
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OCR Scan
Q67060-S6105 diode zener ZD H2 BTS410 bts410 siemens BTS 410 E2 E3043 235L 410E2 TQ-220AB/5
Abstract: Û 2 35 hü 5 QüfilbOl T7fi S IE M E N S PROFET® BTS410H2 Smart Highside Power Switch , =-40.+150°C Undervoltage restart of charge pump see diagram page 472 Vbb(on) Undervoltage hysteresis , BTS 4 10 H2 n i 3 Parameter and Conditions Symbol at 7] = 25 °C, Vbb = 12 V unless , Semiconductor Group 464 â I fl53SbOS QOfllbOS bl3 SIEMENS BTS 410H2 Parameter and Conditions , SIEMENS BTS 410H2 Truth Table Inputlevel Normal operation Open load Short circuit to GND -
OCR Scan

SF5LC20U

Abstract: junction and case f i snaa? 0003440 bTS SHINDENGEN SF5LC20U â  tttà H C H A R A C T E R IS T , Voltage &nm Reverse Current mmmm Reverse Recovery Time m& m Thermal Resistance 472 Conditions rm I fsm Mounting Torque M t e m Ratings Peak Surqe Forward Current » » t t l t bn*? tt * E # Symbol 50H ziF.aS, S S të S Ï, Tc=137'C 50Hz sine wave
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OCR Scan
DDD3441
Abstract: 150°C; RG = 1 M£i E 600 V V GES Continuous ±20 V V GEM Transient  , Diode cathode SSOA (RBSOA) VG = 1 5 V ,T V = 125°C,RG= 1 0 i i E J Clamped inductive load, L , . bvc es 'c = 250 nA, VG = 0 V E 600 V GE(th) 'c = 250 (xA, VC = VG E E 2.5 , >U>° ^CES = 0 V, VG = ±20 V E = IC 90,V ge= 1 5 V © 1999 IXYS All rights reserved , ^FAVM Q E 153432 A 100 @ 0 .8 V ces V RRM « SOT-227B, miniBLOC V 5 V -
OCR Scan
50N60BD2 50N60BD3 IXGN50N60BD2 IXGN50N60BD3

N5dV

Abstract: equivalent io transistor 131-G (5V Out) Vo , ,=100/ , GND 4-96-Neu ^apan Radio CoML â  tSblflöB OOOa^lB bTS â  NJM2359 Terminal Explanation Pin NO , is d, the COMP-1 output waveform is like e. NOR GATE output goes high only when two input signals (c, e) are low. The falling period of the triangular waveform is like e. NOR.GATE output goes high only
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N5dV equivalent io transistor 131-G 25x106 aatj jm23 NJM2904 NJM23S9 KJM23S90 4-100-N
Abstract: Performance A s a Function o fL O D riv e , -40 to +85 deg C _ 0 = +13dBn i Min. LC) = +10 dBm IF , : 781-932-8903 dBm 17 dBm W ebSite: www.hittite.com M ICRO W A V E C O R P O R A T IO N HMS208MS8 , dBm isolation @ LO = +13 dBm F R E Q U E N C Y (G H z) F R E Q U E N C Y (G H z) Return Loss @ LO = +13 dBm M ixers Conversion Loss vs. LO Drive F R E Q U E N C Y (G H z) F R E Q U E N C Y (G H z) P1 dB vs. Temperature @ LO = +13 dBm IF Bandwidth @ LO = +13 dBm IF F R E -
OCR Scan
HMC208MS8 T0G4125
Abstract: be used to drive N-channel power M O SFET s or IG BTs in the high side configuration which operate , ircuit D esig n e r s ' M a n u al B-157 International IQ R Rectifier IR2131 Absolute Maximum , DG27bf l b 472 International IO R Rectifier 4Ã55452 0027bfl7 30= 5 IR2131 HIN1 i_ r , \_ C o n tro l I ntegrated C ircuit D esig n e r s ' M a n u a l B-163 International IGR , 200°C/W E-6 DIP MS 001AC 78°C/W E-7 MS 001 AC 83°C/W E-7 DIP without -
OCR Scan
5M-1982 M0-047AC 554S2

CIET-22-DF

Abstract: ZD110238-1010 Grounding Indents A +.015 (0.38) B ±.005 (0.13) C +.010 (0.25) D +.010 (0.25) E Typ. 15 ZDEA15P 1.216 , Grounding Indents A ±.015 (0.38) e +.005 (0.13) C ±.010 (0.25) D ±.010 (0.25) E Typ. 15 ZDEA15S 1.216 , . D 7fiE â  477SbST aOCm?^ T47 â  TT- u r\ r- â'¢ c I> 7Ã"E â â  M772bSc! 00Q74ÃD 7bT â  7nj , D ±.005 (0.13) E ±.005 (0.13) F ± 005 (0.13) G ±.002 (0.05) H ±.002 (0.05) J ±.002 (0.05) A , (3.35) E Standard Front Mounting .874 (22.19) .437 (11.09) .984 (24.991 .492 (12.49) .513 (13.03) .257
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OCR Scan
ZDCA62P CIET-22-DF ZD110238-1010 BTS 2954 ZD110238-1005 DD-78 DD50SA197 ZDAA26P ZDBA44P ZDAA26S ZDBA44S ZDCA62S

AN1294

Abstract: PD57002 digital cellular BTS applications requiring high linearity. ORDER CODE PD57002 The PowerSO , 5.19 84 0.038 -2 0.858 -90 500 0.881 -113 4.72 77 0.039 -6 0.870 , 0.2 0.007 D1 7.4 7.5 7.6 0.290 0.295 0.298 E E1 13.85 9.3 14.1 9.4 , 9.5 9.6 0.370 0.374 0.377 D1 7.4 7.5 7.6 0.290 0.295 0.298 E
STMicroelectronics
Original
PD57002S AN1294 0927 TRANSISTOR SO-10RF SO-10

907 TRANSISTOR smd

Abstract: AN1294 ideal for digital cellular BTS applications requiring high linearity. ORDER CODE PD57002 The , 0.881 -113 4.72 77 0.039 -6 0.870 -96 550 0.888 -119 4.30 71 , 0.2 0.007 D1 7.4 7.5 7.6 0.290 0.295 0.298 E E1 13.85 9.3 14.1 9.4 , 9.5 9.6 0.370 0.374 0.377 D1 7.4 7.5 7.6 0.290 0.295 0.298 E
STMicroelectronics
Original
907 TRANSISTOR smd 0137 0904

BTS721L1 equivalent

Abstract: Q67060-S7002-A2 (A + 14, Ua = 13.5 V R fi = 2 £2, id = 200 ms; IN = low or high, each channel loaded with OL = 4.7£2 , Chip 2 1N1 IN3 IN2 IN4 OUT1 OUT3 OUT2 OUT4 ST1/2 ST3/4 BTS721L1 BTS 721L1 L L L L H L H L H H H L , energy dissipation BTS721L1 E L= V L - I * While demagnetizing load inductance, the energy , -1 S o ld e r in g po"" Pin 15 Printed circuit board (F R 4 ,1.5mm thick, one layer 70|im, 6cm2
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Q67060-S7002-A2 BTS721L1 equivalent 721-L1

ha 13627

Abstract: transistor equivalent 0107 NA Respective Manufacturer â"¢.v e â  â  bbSBTBl 0054*^5 402 MAPX Philips Semiconductors Product , . QL-b.e (f) = QLb,e V (VFc). Fc = scaling frequency = 1000 MHz. Fig.21 Package equivalent circuit , Its Respective Manufacturer DhT e â'¢ ^ - â  bb53T31 DQESDOH 013 HAPX _ , Philips Semiconductors , 112.5 0.046 48.6 0.544 -45.7 24.5 600 0.538 -130.7 10.152 107.0 0.050 47.2 0.493 -47.6 22.8 700 0.526 , Copyrighted By Its Respective Manufacturer Philips Semiconductors â'" bb53T31 DOBÃÃÃT bTS HAPX Product
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BFG520 ha 13627 transistor equivalent 0107 NA ISC 9809 code n42 MS801-4 data ic ha 13627 BFG520/X BFG520/XR MSB03 MS8014

BTS 132 SMD

Abstract: broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS , 7.57 6.82 6.23 5.65 5.19 4.72 4.30 3.95 3.62 3.36 3.12 2.92 2.73 2.56 2.40 2.25 2.13 2.20 1.92 1.83 , E E1 E2 E3 F G L R1 R2 T T1 T2 2 deg 0.8 5 deg 6 deg 10 deg 8 deg 2 deg 0.8 5.4 0.23 9.4 7.4 13.85
STMicroelectronics
Original
BTS 132 SMD PD57002-E

p 945

Abstract: BTS 132 SMD digital cellular BTS applications requiring high linearity. ORDER CODE PD57002 The PowerSO , assembly. (s) ct u od Pr e Mounting recommendations are available in www.st.com/rf/ (look , D Pr e SC13140 IMPEDANCE DATA PD57002S FREQ. MHz ZIN () ZDL() 925 1.894 - j , ) 100 5.5 6 s) t( ro P so Ob - 125 Pr e let o bs O 3/16 PD57002 , Pout W) Output Power vs Drain Current Pout (W) 20 2.25 od Pr e Pout (W) O 1
STMicroelectronics
Original
p 945 0918 158
Abstract: or equivalent 142-0701-206 or equivalent 142-0701-206 or equivalent DO1608C-472 1206 CTS/CTS766 , , SMA_PCB_MT PCB Mount SMA jack, not installed DO1608C-series, DS1608C-472 1206 Chip resistor, 1.5K, 1/4 W, 1 , THS3001 W2 W3 2X3_JUMPER 1206 1206 3214W-1-502 E or equivalent 1206 1206 1206 1206 1206 1206 1206 1206 T1 , ,78) 4040000 / E 08/01 A MIN NOTES: A. B. C. D. All linear dimensions are in inches , DSP14 R4A DSP15 DVDCC 750 W9 +5VA A B C 1 D E F R30 J7 R22 6 U9 7 3 750 Texas Instruments
Original
THS5651A 10-BIT SLAS260A THS5651AIDW THS5651AIPW THS5651AIDWR

Kathrein 739 160

Abstract: Kathrein Antennas Half-Parabolic Omnidirectional Antennas Indoor and Special Application Antennas Indoor E-911 TMAâ'™s
KATHREIN SCALA
Original
Kathrein 739 160 Kathrein Antennas Kathrein 840 21210 Kathrein gsm ANTENNA CSA AWM 1 A 2002-95-EC
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