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ADS54T04IZAYR Texas Instruments 2-ch 500MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85 visit Texas Instruments
ADS54T04IZAY Texas Instruments 2-ch 500MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85 visit Texas Instruments
ADS54T02IZAY Texas Instruments 2-ch 750MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85 visit Texas Instruments
ADS54T02IZAYR Texas Instruments 2-ch 750MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85 visit Texas Instruments
ADS54T01IZAYR Texas Instruments 1-ch 750MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85 visit Texas Instruments
ADS54T01IZAY Texas Instruments 1-ch 750MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85 visit Texas Instruments

BTS 432 E3062A

Catalog Datasheet MFG & Type PDF Document Tags

409L1

Abstract: BTS 304 432D2 E3062A BTS 432E2 BTS 432E2 E3043 BTS 432E2 E3062A BTS 432 F2 BTS 432 F2 E3043 BTS 432 F2 E3062A , BTS 306 BTS 307 BTS 308 BTS BTS BTS BTS 409L1 409L1 E3043 409L1 E3062A 410D2 Ordering Code , BTS 410D2 E3043 BTS 410D2 E3062A BTS 410E2 BTS 410E2 E3043 BTS 410E2 E3062A BTS 410F2 BTS 410F2 E3043 BTS 410F2 E3062A BTS 410G2 BTS 410G2 E3043 BTS 410G2 E3062A BTS 410H2 BTS 410H2 E3043 BTS 410H2 E3062A BTS 412B2 BTS 412B2 E3043 BTS 412B2 E3062A BTS 426L1 Semiconductor Group 651 SIEM EN S
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OCR Scan
C67078-A5007-A7 C67078-A5008-A4 E3230 612N1 621L1 BTS 304 409-L1 E-3230 432F2 E3044 E3045 E3046 110E3046 E3045A 114AE3044

BTS 432 E3062A

Abstract: TRANSISTOR SMD MARKING CODE 7A -5-2 BTS 432 E2 BTS432E2 E3062A 4.4 10 ±0.2 3.7 ±0.3 5 x 0.8 ±0.1 1) 3.9 ±0.4 M A C , PROFET® BTS 432 E2 Smart Highside Power Switch Product Summary VLoad dump 80 Vbb-VOUT , -Jan-26 PROFET® BTS 432 E2 Pin Symbol Function 1 GND Logic ground 2 IN Input, activates , Sheet 2 2010-Jan-26 PROFET® BTS 432 E2 Electrical Characteristics Parameter and Conditions , Data Sheet 3 2010-Jan-26 PROFET® BTS 432 E2 Parameter and Conditions Symbol at Tj = 25
Infineon Technologies
Original
PG-TO263-5-2 BTS 432 E3062A TRANSISTOR SMD MARKING CODE 7A smd zener diode marking code 511 TRANSISTOR SMD MARKING CODE 2b SMD TRANSISTOR MARKING 6B PG-TO220-5-11 2010-J

BTS 432 E2

Abstract: BTS432E2 PROFET® BTS 432 E2 Smart Highside Power Switch Features Product Summary VLoad dump 80 , inductive loads Infineon Technologies AG 1 22.03.99 PROFET® BTS 432 E2 Pin Symbol , Technologies AG 2 22.03.99 PROFET® BTS 432 E2 Electrical Characteristics Parameter and Conditions , Technologies AG 3 22.03.99 PROFET® BTS 432 E2 Parameter and Conditions Symbol at Tj = 25 °C , ® BTS 432 E2 Parameter and Conditions Symbol Values min typ max VIN(T+) 1.5 -
Infineon Technologies
Original
BTS 432 E2 E3062 Q67060-S6202-A2 Q67060-S6202-A4 Q67060-S6202-A6 432I2

Diode smd code f2

Abstract: BTS432F PROFET® BTS 432 F2 Smart Highside Power Switch Features Product Summary VLoad dump 80 , Group Page 1 of 14 1999-Mar.-22 BTS 432 F2 Pin Symbol Function 1 GND - , -Mar.-22 BTS 432 F2 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 , -Mar.-22 BTS 432 F2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified , -Mar.-22 BTS 432 F2 Parameter and Conditions Symbol Values min typ max VIN(T+) 1.5 - 2.4
Siemens
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Diode smd code f2 BTS432F BTS432F* smd TD-200 siemens 1999-M
Abstract: E3062A I t &R: Semiconductor Group Page 13 Q67060-S6201-A5 1999-Mar.-22 SIEMENS BTS 432 , SIEMENS PRÃFET® BTS 432 D2 Smart Highside Power Switch Features Product Summary â , -Mar.-22 SIEMENS BTS 432 D2 Pin Symbol Function 1 GND - Logic ground 2 IN I , BTS 432 D2 Electrical Characteristics Parameter and Conditions Symbol CL m in -iâ'"  , s st Semiconductor Group Page 3 1999-Mar.-22 SIEMENS BTS 432 D2 Symbol Values -
OCR Scan
Abstract: E3062A I t &R: Semiconductor Group Page 13 Q67060-S6202-A6 1999-Mar.-22 SIEMENS BTS 432 , SIEMENS PRÃFET® BTS 432 E2 Smart Highside Power Switch Features Product Summary â , -Mar.-22 SIEMENS BTS 432 E2 Pin Symbol Function 1 GND - Logic ground 2 IN I , -Mar.-22 SIEMENS BTS 432 E2 Electrical Characteristics Parameter and Conditions Symbol CL m in , Semiconductor Group Page 3 1999-Mar.-22 SIEMENS BTS 432 E2 Symbol Values min CL -iâ'" -
OCR Scan

432F2

Abstract: BTS 432 D2 E3043 PROFET® BTS 432 D2 Smart Highside Power Switch Features · · · · · · · · · · · · , required for charged inductive loads Infineon Technologies AG Page 1 of 14 1999-03-22 BTS 432 , without blown air. Infineon Technologies AG Page 2 1999-Mar.-22 BTS 432 D2 Electrical , without load. Infineon Technologies AG Page 3 1999-Mar.-22 BTS 432 D2 Protection Functions , ) Infineon Technologies AG Page 4 1999-Mar.-22 BTS 432 D2 Input and Status Feedback11) Input
Infineon Technologies
Original
BTS 432 D2 E3043 ag20a BTS432D2 Q67060-S6201-A2 Q67060-S6201-A4 BTS432
Abstract: E3062A I t &R: Semiconductor Group Page 13 Q67060-S6203-A6 1999-Mar.-22 SIEMENS BTS 432 , SIEMENS PROFET® BTS 432 F2 Smart Highside Power Switch Features Product Summary â , charged inductive loads Semiconductor Group Page 1 of 14 1999-Mar.-22 SIEMENS BTS 432 F2 , blown air. Semiconductor Group Page 2 1999-Mar.-22 SIEMENS BTS 432 F2 Electrical , , if \/in>5.5 V s st Semiconductor Group Page 3 1999-Mar.-22 SIEMENS BTS 432 F2 -
OCR Scan

Diode smd code f2

Abstract: BTS432F* smd PROFET® BTS 432 F2 Smart Highside Power Switch Features Product Summary VLoad dump 80 , Technologies AG 1 22.03.99 PROFET® BTS 432 F2 Pin Symbol Function 1 GND - Logic , . PCB is vertical without blown air. Infineon Technologies AG 2 22.03.99 PROFET® BTS 432 F2 , ® BTS 432 F2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise , 4 22.03.99 PROFET® BTS 432 F2 Parameter and Conditions Symbol Values min typ max
Infineon Technologies
Original
BTS432F2 Q67060-S6203-A2 Q67060-S6203-A4 profet Diode smd f2

SMD code E2 transistor

Abstract: Q67060-S6202-A6 PROFET® BTS 432 E2 Smart Highside Power Switch Features Product Summary · Load dump and , vertical without blown air. Semiconductor Group 2 BTS 432 E2 Electrical Characteristics , Semiconductor Group 3 µA BTS 432 E2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V , BTS 432 E2 Parameter and Conditions Symbol Values min typ max VIN(T+) 1.5 - 2.4 , voltage drop across this resistor. Semiconductor Group 5 Unit BTS 432 E2 Truth Table Input
Siemens
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SMD code E2 transistor

BTS 432 E3062A

Abstract: smd diode l15 PROFET® BTS 432 D2 Smart Highside Power Switch Features Product Summary VLoad dump 80 , inductive loads Semiconductor Group Page 1 of 14 1999-Mar.-22 BTS 432 D2 Pin Symbol , Group Page 2 1999-Mar.-22 BTS 432 D2 Electrical Characteristics Parameter and Conditions , Semiconductor Group Page 3 1999-Mar.-22 BTS 432 D2 Parameter and Conditions Symbol at Tj = 25 , capability during undervoltage shutdown 12) Semiconductor Group Page 5 1999-Mar.-22 BTS 432 D2
Siemens
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smd diode l15 siemens profet

BTS432E2

Abstract: BTS 432 E3062A PROFET® BTS 432 E2 Smart Highside Power Switch Features Product Summary VLoad dump 80 , inductive loads Semiconductor Group Page 1 of 14 1999-Mar.-22 BTS 432 E2 Pin Symbol , Group Page 2 1999-Mar.-22 BTS 432 E2 Electrical Characteristics Parameter and Conditions , Semiconductor Group Page 3 1999-Mar.-22 BTS 432 E2 Parameter and Conditions Symbol at Tj = 25 , drop across this resistor. Semiconductor Group Page 5 1999-Mar.-22 BTS 432 E2 Truth Table
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BTS432E2-E3062A BTS 432 E2 E3043

BTS432E2

Abstract: E3043 PROFET® BTS 432 E2 Smart Highside Power Switch Features Product Summary · Load dump and , Page 1 of 13 12.Sep.95 BTS 432 E2 Pin Symbol Function 1 GND - Logic ground , . PCB is vertical without blown air. Semiconductor Group Page 2 12.Sep.95 BTS 432 E2 , , add IIN, if VIN>5.5 V Semiconductor Group Page 3 12.Sep.95 BTS 432 E2 Parameter and , .Sep.95 BTS 432 E2 Parameter and Conditions Symbol Values min typ max VIN(T+) 1.5 - 2.4
Siemens
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432E2

Abstract: e3062a PROFET® BTS 432 E2 Smart Highside Power Switch Product Summary 80 VLoad dump Vbb-VOUT , Semiconductor Group 1 of 14 2003-Oct-01 BTS 432 E2 Pin Symbol Function 1 GND - , -Oct-01 BTS 432 E2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified , 2 and circuit page 7). Semiconductor Group 4 2003-Oct-01 BTS 432 E2 Parameter and , resistor. Semiconductor Group 5 2003-Oct-01 BTS 432 E2 Truth Table Input- Output level
Infineon Technologies
Original
bts432e 2003-O

siemens BSM b2

Abstract: BTS 472 E SIEMENS fl535b05 GCH27S5 Tis m PROFET® BTS 432 D2 Product Summary VLoad dump 80 V , BTS 432 D2 Electrical Characteristics Parameter and Conditions Symbol Values Unit at Tj = 25 °C ,   fl23SbOS []CH27bO EöB SIEMENS_ Truth Table BTS 432 D2 Input- Output Status level level 432 432 , By Its Respective Manufacturer SIEMENS BTS 432 D2 Inductive and overvoltage output clamp ZS sz , SIEMENS Inductive Load switch-off energy dissipation Ebb_ BTS 432 D2 © - 1 â'" IN vbb PROFET
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OCR Scan
siemens BSM b2 BTS 472 E transistor RCA 467 B37 zener diode bts 43202 bts43202

BTS 472 E

Abstract: v5n diode SIEM ENS Smart Mighside Power Switch Features · · · · · · · · · · · · PROFET® BTS 432 D2 , Function Logic ground BTS 432 D2 Input, activates the power switch in case of logical high signal , Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified BTS 432 D2 Symbol min , specified BTS 432 D2 Symbol Values min typ Unit max Protection Functions Initial peak short circuit , Parameter and Conditions at Tj = 25 °C Vbb = 12 V unless otherwise specified BTS 432 D2 Symbol Values
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v5n diode Q67060-S6201
Abstract: H Ã"235b05 O O ñ l b l 4 b2 b SIEMENS PROFET® BTS 432 F2 Smart Highside Power , . Semiconductor Group 475 â  Ã»E3SbOS OOÛlblb MT'l SIEMENS BTS 432 F2 Electrical , r G ro u p 478 5.4 6.1 V 0.4 B235b05 DOBlbn IDfi SIEMENS BTS 432 F2 , c tio n â I ÃE!35b05 G O à l b S D TBT SIEMENS BTS 432 F2 Inductive and , BTS 432 F2 Inductive Load switch-off energy dissipation £L oad < £ L £ L = 1 /2 * L ' ^ -
OCR Scan
CPT053J6

E3062

Abstract: BTS432D2 PROFET® BTS 432 D2 Smart Highside Power Switch Features Product Summary · Load dump and , vertical without blown air. Semiconductor Group 2 BTS 432 D2 Electrical Characteristics , , add IIN, if VIN>5.5 V Semiconductor Group 3 µA BTS 432 D2 Parameter and Conditions , max. ratings page 2 and circuit page 7). 9) Semiconductor Group 4 BTS 432 D2 Parameter , shutdown 12) Semiconductor Group 5 Unit mA BTS 432 D2 Truth Table Input- Output
Siemens
Original
Abstract: â  Ã E 3 S bO S D D f i m ^ b TFT S IE M E N S PROFET® BTS 432 E2 Smart Highside ,   SIEMENS Pin Symbol 1 GND 2 3 BTS 432 E2 Function - Logic ground IN I Input , SIEMENS BTS 432 E2 Parameter and Conditions Symbol at Tj = 25 °C, Mjb= 12 V unless otherwise , 0.4 ô 2 3S bD S DDfilSDl 0^7 SIEMENS BTS 432 E2 Truth Table Input- Output level , IE M E N S BTS 432 E2 Inductive and overvoltage output clamp GND disconnect V o n clamped -
OCR Scan

bts 43202

Abstract: BTS432E2-E3062A ï»¿â  0235bOS OOflm^b TTT SIEMENS PROFET® BTS 432 E2 Product Summary VLoad dump 80 V , Respective Manufacturer BTS 432 E2 Electrical Characteristics Parameter and Conditions at Tj = 25 °C, Vbb , 235b05 OOflUm bCH SIEMENS BTS 432 E2 Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V , Material Copyrighted By Its Respective Manufacturer Ã235b05 0061501 0^7 SIEMENS BTS 432 E2 Truth Table , Manufacturer I fl23SbDS DDfllSDE T23 SIEMENS BTS 432 E2 Inductive and overvoltage output clamp lì '
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OCR Scan
BTS 732 smd transistor jst 3H DIODE smd ZD11 jst smd code BTS432E2 E3062A CPT0SI65
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