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BT thyristor

Catalog Datasheet MFG & Type PDF Document Tags

BT 151 thyristor

Abstract: BT thyristor 151 500 R Type designations Thyristors Rectifier T 930 S 18 T M C sym m etrically blocking T thyristor a sym m etrically blocking A thyristor limiting average forw ard 930 current (A) at tc= 85° C Ceram ic , F N 18 fa st thyristor, gatecathode interdigitated fast thyristor, central gate phase control thyristor limiting repetitive peak fo r ward and reverse off-state voltage in 100 V, 18 = 1800 V (A , 500 V/ps 1000 V/ps 50 V/ps 1000 V/ps B1.n S i-n Half-controlled thyristor modules T D 121 TD
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Abstract: SKKT 92, SKKH 92, SKKT 92B THYRISTOR NOMP NOOP= NDOP QJOPM R SBT I G1&321.1 K&0.% +-( 5-)'2 , ? MYYJ UC[SV? MYY$ UCZSV? Symbol ® SEMIPACK 1 Thyristor / Diode Modules Conditions , * CTTT S]BT CTTTT I I Ia* 2a' JK8 R SCB XEW V=A >>> ST 1* SKKT 92 NJ NJGJbH (J QDDW , $ M%% ',% &*%1609 2)*'(.5'2-)* &> 5> BT $1>*>W S * Z S 12)> '- ,%&'*2)j '- '%(12)&0* E , ,SCR,BRIDGE RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation per thyristor vs. on-state SEMIKRON
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thyristor TT 46 N

Abstract: thyristor TT 46 SKKD 46 THYRISTOR BRIDGE,SCR,BRIDGE LMNO Rectifier Diode Modules L WTT @TT YTT XCTT , Values Units *2)> XYTZ [5 R YB UXTTV ¥G _AHXCTZ [& R WB ¥GZ `C H `@ W^ UAAV BT H @T F F , ' & &> 5> BT $1>*>Z X * H X 12)> '- ,%&'*2)g '- '%(12)&0* 1 &77(-3> G&*% ¥G , 21-09-2005 HER © by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 11L Power dissipation per diode , three modules vs. case temperature 2 21-09-2005 HER © by SEMIKRON SKKD 46 THYRISTOR BRIDGE
SEMIKRON
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Abstract: SKKE 290F THYRISTOR BRIDGE,SCR,BRIDGE DQMK DQQK ORQKM S @TT % '40124H4 F0-H. 3), ()*+2*H)HE )7.,0+2)*5 D D OR%D S UVC % 'E2*< BWCX TC IYX Z( S BCV [$5 ¥CC ¥CC Symbol , *< +) 6.0+E2*j +) +.,42*0-E 4 077,)1< $0E. [$ A¥CC e ACCC T k BT l T k BT l T m V , RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1 Typ. recovery charge vs. current decrease Fig. 2 Peak recovery , THYRISTOR BRIDGE,SCR,BRIDGE Dimensions in mm $0E. % T@ * The specifications of our components may not SEMIKRON
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EH77-2

triacs BTA

Abstract: triac snubber ac motor high-voltage application. NXP Hi-Com triacs 1023 NXP Thyristor AG_v4.indd 1 29-05-2008 09:23:33 To , . 1023 NXP Thyristor AG_v4.indd 2 brb186 Horizontal axis washer 100 330 0V BC557 100 , washer Load Part number Valve/pump Motor 1023 NXP Thyristor AG_v4.indd 3 BTA201-800E(R , / 800 B/C 16 600 B/D/E/F BTA216 16 600 BT BTA216 BTA216X BTA216B 16 600 BT/D BTA316 16 600 / 800 B/C/E BTA316 BTA316X BTA316B 16 800 B
NXP Semiconductors
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triacs BTA triac snubber ac motor BC557 in smd package SM1L43 triacs bt 12 Triac ACS108 BTA312B BTA201W BTA202X BTA208X BTA312 BTA212

thyristor BT 200

Abstract: BT thyristor Thyristors BT148 SERIES THYRISTORS en â Q Glass-passivated thyristor in SOT-82 envelope , accessories for SOT-82 envelopes). Z! Mullard February 1988 5 BT 148 SERIES _y \_ RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 1341. Anode to cathode BT 148-400 R 500 R , not recommended, higher off-state voltages may be applied without damage, but the thyristor may switch , I
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thyristor BT 200 BT thyristor thyristor bt 13 Mullard Thyristor thyristor BT BT148-400R BT148-400 M88-1101/RC

Funkamateur

Abstract: zeilentransformator BAX BBM BT B« Bfl B3y BHM BK BK _ Fachabkürzungen _Russisch (1) BK Entzerrer BKy Thyristor BKy , Bildaustastsignal BT Ausgangstransformator BT Videotext By Gleichrichter By Videoverstärker By Eingangs , Entzerrer 3C Tonabnehmer KYB Thyristor 3Y Speicher K4> Fokussierspule 3H Tonfrequenz Kin Kodeschiene K34
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Funkamateur zeilentransformator Germanium Hallgenerator funktionsgenerator tonkopf

3 phase bridge fully controlled rectifier

Abstract: BT thyristor Anode Bridge Circuits B D BT DT BH DH Thyristor Circuits KQ KT UT Single-phase Back-to-back (W1C) Half-bridge (Thyristors in series) Three-phase Back-to-back (W3C) Thyristor/Diode , possible circuits (see table below) Voltage grade = Thyristor/Diode: VRRM / 100; IGBT: VCE / 100; MOS , Thyristor Bridge Three-Phase Thyristor Bridge Single-Phase, Half-Controlled Bridge Three-Phase
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3 phase bridge fully controlled rectifier single phase bridge fully controlled rectifier single phase fully controlled rectifier 3 phase rectifier thyristor bridge thyristor bridge circuit thyristor battery charger

BT thyristor

Abstract: thyristor BT a ix Y S FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes (FRED) Pow er switches (IG BT, M O S F E T , BJT, G T O ) for applications in electronics are , by the turn-off behavior of the Rectifier Diode and Thyristor C h ip s T h e figures 3 a-c sh o w c ro s s sectional view s of the diode and thyristor chips in the passivation area. All thyristor , ) Diode chip, type D W P , D W F P c) Thyristor chip, type C W P Sub strate n + Fig. 2: Cross
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thyristor bt 3A

BT thyristor

Abstract: teg thyristor Contents Page G eneral A lphanum erical Index Sym bols and Term s IG B Ts IGBT IGBT with D iode IG BT B IM O S FE T IG BT M odules ISOSMARTTM IG BT M odules P o w er M O S FE Ts H iP erFE T S tandard M O SFET M O S FE T M odules D iodes Schottky Diodes S uperfast Diodes (HiPerFRED; FRED) S uperfast Diode M odules R ectifier Diodes A valanche Diodes Thyristors Phase Control Th yristors Rectifier Diode M odules Thyrlstor/D lode M odules T h yristor/Thyristor M odules Accessories, Design Inform ation
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teg thyristor thyristor bt 13 g
Abstract: SKKT 20, SKKT 20B THYRISTOR BRIDGE,SCR,BRIDGE NOMP NOOP= NDOP N YTT UATT UBTT N VTT , CT[U@? MZZJ CT¥U@? Symbol Thyristor / Diode Modules Values Units *2)> UVTW J5 R VB , P* P' & &> 5> BT $1>*>W U * [ U 12)> '- ,%&'*2)j '- '%(12)&0 1 &77(-3> E&*% , 03-01-2005 NOS © by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp. Fig. 2L Power SEMIKRON
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Abstract: SKMT 92, SKKL 92 THYRISTOR BRIDGE,SCR,BRIDGE NOGL NOOL= NJOL N VTT SATT SBTT S¥TT N , GHLM VCZSW? Symbol ® SEMIPACK 1 Thyristor / Diode Modules Conditions Values Units , E&*% SKMT &> 5> BT $1>*>X S * Z S 12)> '- ,%&'*2)K '- '%(12)&0* GHLM GHH; D ¥C D BV SKKL 04-04-2007 GIL © by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs SEMIKRON
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F42Z4
Abstract: SGS-THOMSON MDS50 RiilD(@lS©il[L[l(gT[S©liD©i DIODE / THYRISTOR MODULE FEATURES â , CONNECTIONS 1 2 3 4 : Thyristor Gate (G) : Thyristor Cathode (K) : Thyristor Anode/Diode Cathode (I , =125°C 10 mA Tj=25°C 50 ¡iA 7^237 0 D bT 5 10 fc.3S MDS50 Fig. 1 : Maximun Average Power dissipation versus average on-state current. (Sinusoidal waveform : Thyristor or Diode) Fig , ) for different thermal resistances heatsink + contact. (Sinusoidal waveform : Thyristor or Diode) P -
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2T237

2N4444 equivalent

Abstract: 2N4441 forward or reverse blocking capability, thyristor devices should not be tested with a constant current , potential on the MOTOROLA THYRISTOR DEVICE DATA 3-39 MOTOROLA SC iDIODES/OPTO} 2N4441 thru 2N4444 Qà , , Vd = Rated VpRM> *Bt â'" 1 â'" Ils Circuit Commutateci Turn-Off Time (lTM = 5 A, iR = 5 A) (lTM = 5 , ), soldering temperatures shall not exceed + 225°C. MOTOROLA THYRISTOR DEVICE DATA 3-40 MOTOROLA SC OIODES , 10 20 30 I. TIME (ms) 50 70 100 200 300 500 700 1000 2000 3000 MOTOROLA THYRISTOR DEVICE DATA
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2N4442 2N4443 2N4444 equivalent 2N4441 Motorola 2n4443 equivalent motorola thyristor 339 2IM4444

16 amp SCR application

Abstract: SCR 214 HUTSON INDUSTRIES bT DE J 4b4Ll7DD â¡â¡â¡â¡m t. | HUTSON INDUSTRIES mimmm^mmmmmnismfm , power dissipated between gate and cathode, of a reverse blocking thyristor. Average On-State or , a reverse blocking thyristor. Instantaneous Forward Breakover Voltage (Open Gate) â'" VF,iâ'ž,.> â , '" Critical dv/dt â'" The minimum value of the rate of applied forward voltage which will cause the thyristor , VIEW LANE DALLAS, TEXAS 75234 (214) 241-3511 TWX 910-860-5537 PFSS -oooOZ-3t HUTSON INDUSTRIES bT DE
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16 amp SCR application SCR 214 s635 S525 scr 6 Ampere scr bt series 200 A 4470D

Thyristor BT 102

Abstract: BT thyristor N AMER PHILIPS/DISCRETE b'ìE T> m bbS3T31 DD2714GD ^öb BAPX 2N5064 A THYRISTOR Fully-diffused thyristor in TOâ'"92 package, with low gate current requirement suitable for driving from IC outputs. Applications include relay and coil pulsing, control of small DC motors, small lamps, etc. QUICK REFERENCE DATA Repetitive peak voltages vdrm/vrrm max. 200 V Average on-state current 'T(AV) max. 0.5 A , Ã'I1ER PHILIPS/DISCRETE b'iE 2IM5UÃ4 I I D m bt.53131 OOS? MDl â  APX RATINGS Limiting values
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N5064 Thyristor BT 102 relay 12v 100A S3T31 MLA862 S3131 DE740E

SC146

Abstract: thyristor BT 200 MOTOROLA SC ( DI O D E S / O P T O ) b4E J > b3fc>7255 DDÖbl BT 5S7 MOT? Triacs Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light , that the voltage ratings of the devices are exceeded MOTOROLA THYRISTOR DEVICE DATA 3-244 , THYRISTOR DEVICE DATA 3-245 MOTOROLA SC (DIODES/OPTO ) b4E D L3b7E55 G O ß b i m 10S *11017 , ),RMS ON-STATE CURRENT IAMP) 50 3 MOTOROLA THYRISTOR DEVICE DATA 3-246
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SC146 SC141

thyristor st 103

Abstract: Thyristor BT 102 BT 1 5 1 -6 5 0 R ST AN DARD Glass Passivated thyristor in a plastic envelope, intended for , 1.4 1.75 V ITM=40A;VD = VDRM(MAX);IG=0.1A; DI G /dt=5A/us 21 2 us H SiN BT , the number of sinusoidal current cycles; maximum values. 22 H SiN BT 1 5 1 -6 5 0 R , mounting base temperature; maximum values. 23 H SiN BT 1 5 1 -6 5 0 R 5. Thermal , function of pulse width. 24 H SiN BT 1 5 1 -6 5 0 R Tj = 25 ° unless otherwise stated C
HSIN Semiconductor
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thyristor st 103 BT 139 F applications note SC-46

semikron thyristor

Abstract: GAL -700E -1 untenstehende Tabelle) Spannungsklasse = Thyristor/Diode: VRRM / 100; IGBT: VCE / 100; MOS: VDS / 10 , (Mittelpunktschaltung) Brückenschaltungen B D BT DT BH DH Thyristorschaltungen KQ KT UT Antiparallel einphasig (W1C) Halbbrücke (Thyristoren in Reihe) Antiparallel dreiphasig (W3C) Thyristor/Dioden
SEMIKRON
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semikron thyristor GAL -700E -1 Dioden Tabelle Thyristor Tabelle Semikron Semitop 3 Dioden GA 100

C106 thyristor

Abstract: C106D motorola value ¿-34 I Motorola Thyristor Device Data t , 'C, Rqk - 1000 Ohms. Vq - Rated Vqrm) dv/dt â'" 8 â'" V/jis Tum-On Time , ) Motorola Thyristor Device Data 5? FIGURE 2 - MAXIMUM ON-STATE POWER DISSIPATION junction temperature - , Competitive C-106 Package 3-36 . Motorola Thyristor Device Data -*â'¢ : - Ã"*
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C106F C106A C106B C106D C106M C106 thyristor C106D motorola thyristor c106d C106 C106d silicon controlled rectifier BT thyristor 106 110-C
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