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BSY95A Datasheet

Part Manufacturer Description PDF Type
BSY95A Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO18 / Vceo=15 / Ic=0.2 / Hfe=50-200 / fT(Hz)=200M / Pwr(W)=0.3 Original
BSY95(A) N/A Silicon NPN Transistor Original
BSY95A Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=15 / Ic=0.2 / Hfe=50-200 / fT(Hz)=200M / Pwr(W)=0.3 Original
BSY95A Continental Device India Semiconductor Device Data Book 1996 Scan
BSY95A Continental Device India TO-92 NPN Plastic Package Transistors Scan
BSY95A Crimson Semiconductor Transistor Selection Guide Scan
BSY95A Ferranti Semiconductors Shortform Data Book 1971 Scan
BSY95A Ferranti Semiconductors Quick Reference Guide 1985 Scan
BSY95A Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
BSY95A ITT Industries Misc. Data Book Scans 1975/76 Scan
BSY95A ITT Semiconductors Transistors 1980 Scan
BSY95A ITT Semiconductors Semiconductor Summary 1969 Scan
BSY95A Micro Electronics Semiconductor Devices Scan
BSY95A Mullard Quick Reference Guide 1977/78 Scan
BSY95A N/A Basic Transistor and Cross Reference Specification Scan
BSY95A N/A Basic Transistor and Cross Reference Specification Scan
BSY95A N/A Shortform Transistor PDF Datasheet Scan
BSY95A N/A Diode, Transistor, Thyristor Datasheets and more Scan
BSY95A N/A Semiconductor Master Cross Reference Guide Scan
BSY95A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
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BSY95A

Catalog Datasheet MFG & Type PDF Document Tags

BSY95A

Abstract: BSY95 BSY95A NPN Silicon Epitaxial Planar Transistor for general purpose switching applications 58 , Ti 175 °C Storage Temperature Range Ts -65 . . . +175 °C 66 BSY95A Characteristics at TA = 25 , terminals supplying Vcc and VBB. 67 BSY95A Collector cutoff current versus ambient temperature nA , / / / < / / / // / / 100 200°C -Tamb DC current gain versus collector current BSY95A 200 180 ^FE 160 U0 120 100 , BSY95A 0.1 VEB = 1.5V -typical / / / ! / y i
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BSY95

BSY95A

Abstract: BSY95A philips international SbE D 711Dû2b Q0MH44E 36T MPHIN T-3S-U SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistors in a TO-18 metal envelope intended for general purpose low level , Manufacturer BSY95A 'HILIPS INTERNATIONAL SbE D m 711002b QQ42443 21b BIPHIN RATINGS limiting values of , saturation voltage I = 10mA, 1=0.2mA C 15 BSY95A 711002b 0042444135 IPHIN Min. 30 50 0.67 Max. 200 , Respective Manufacturer BSY95A y v PHILIPS INTERNATIONAL 5bE D â  711002b D0MBM45 Q^ Wà PHIN T
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100MH T-35-11 IB6231

BSY95A

Abstract: b ^ E D â  bbSB'IBl U Q 2 7 ^5 E a n N AMER PHILIPS/DISCRETE APX BSY95A A SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistors in a TO-18 metal envelope intended for general purpose low level switching applications. QUICK REFERENCE DATA Collector-base voltage (open emitter , August 1990 565 b'lE BSY95A J m > bbSB'lBl D[]27^S3 725 N AHER PHILIPS/DISCRETE , MHz APX bRE D â  bb53R31 DD27R54 bbl â  APX BSY95A Silicon planar epitaxial
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7Z69420 53R31

N706A

Abstract: 2N2368 200 10 300 TO-18 â'" 2N706 25 20 â'" 0-6 10 1 20 â'" 10 200 10 300 TO-18 â'" BSY95A 20 15 200 0-35 , 300 T018 â'" BSY95A 20 15 200 0-35 10 0-2 50 200 10 200 10 300 T018 tAtTcase=45"C TOâ'"18 TOâ , -24 10 1 40 120 10 - â'" 12 18 10 TO-18 - BSY95A 15 200 0 -35 10 0-2 50 200 10 200 10 ( note 3 ) TO , '" 2N2369 15 500 0 24 10 1 40 120 10 - â'" 12 18 10 T018 â'" BSY95A 15 200 0 35 10 0-2 50 200 10 200 10
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2N4037 2N696 2N1131 2N697 2N1132 BFY51 N706A 2N2368 2N2475 2N290 2N2220 N3053

BSY95A

Abstract: ic 2 bo 565 b^E D â  bbsaiai â¡G27tiss a^ N AMER PHILIPS/DISCRETE IAPX A BSY95A SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistors in a TO-18 metal envelope intended for general purpose low level , BSY95A blE J> m bbS3T31 0027^53 725 N AMER PHILIPS/DISCRETE IAPX RATINGS Limiting values of operation , epitaxial transistor N AJ1ER PHILIPS/DISCRETE IAPX BSY95A FE CE(sat) BE(sat) DC current gain Ic = , BSY95A _Ã' b^E J> â  bbS3T31 DDE7elSS STö HAPX N .Arm PHILIPS/DISCRETE Fig.2 Test circuit and
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ic 2 bo 565 npn general purpose Silicon Epitaxial Planar Transistor philips bbS3T31 S3T31 53T31

2N2368

Abstract: 2N2475 -24 10 1 40 120 10 - â'" 12 18 10 TO-18 - BSY95A 15 200 0 -35 10 0-2 50 200 10 200 10 ( note 3 ) TO , '" 2N2369 15 500 0 24 10 1 40 120 10 - â'" 12 18 10 T018 â'" BSY95A 15 200 0 35 10 0-2 50 200 10 200 10
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2N2218 N2904 2N2219 2N2905 2N2221 N2906 2N2476 2N2222

2n706

Abstract: BC178 200 10 300 TO-18 â'" 2N706 25 20 â'" 0-6 10 1 20 â'" 10 200 10 300 TO-18 â'" BSY95A 20 15 200 0-35 , 300 T018 â'" BSY95A 20 15 200 0-35 10 0-2 50 200 10 200 10 300 T018 tAtTcase=45"C TO-18 TOâ'"39 9
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BC107 BC177 BCY59 BCY79 BC178 bc107 complement 2N929 2N930

2N709

Abstract: 2N2475 10 300 TO-18 - BSY95A 20 15 200 0.35 10 0.2 50 200 10 200 10 300 TO-18 - / TO-18 TO-39 MC3 NPN , 20 60 10 - - 12 15 10 TO-18 - 2N2369 15 500 0.24 10 1 40 120 10 - - 12 18 10 TO-18 - BSY95A 15 200
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2N3053 2N706A 2N709 ZT181 BFX86 BCY42 BCY43 BFY52

2N697

Abstract: Transistor BC177 200 10 300 TO-18 â'" 2N706 25 20 â'" 0-6 10 1 20 â'" 10 200 10 300 TO-18 â'" BSY95A 20 15 200 0-35 , 300 T018 â'" BSY95A 20 15 200 0-35 10 0-2 50 200 10 200 10 300 T018 tAtTcase=45"C TOâ'"18 TOâ , -24 10 1 40 120 10 - â'" 12 18 10 TO-18 - BSY95A 15 200 0 -35 10 0-2 50 200 10 200 10 ( note 3 ) TO , '" 2N2369 15 500 0 24 10 1 40 120 10 - â'" 12 18 10 T018 â'" BSY95A 15 200 0 35 10 0-2 50 200 10 200 10
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Transistor BC177 audio BC108 bc108 IC ZT182 BCY58 BCY78 BC108 ZT180 ZT187

BU102

Abstract: BDX23 VCBO VCEO >CM hFE @ Ic (V) (V) (mA) min. mA BSY95A 20 15 100 50 BSY27 20 15 100 40 2N706 25 â'" 50 , 0.25 10 7 18 500 19553X 65 BSY95A 20 15 50 200 10 0.35 10 â'" â'" 200 19572G 65 cm e 25 12 40 60 10
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BSY51 BSY54 BSY55 BSY56 2N1613 2N1711 BU102 BDX23 bd663 BDX61 BD663B BSY87 BSY88

2N1131

Abstract: 2N1132 10 200 10 300 TO-18 - BCY57 25 20 100 0.2+ 100 10 200 800 2 350+ 10 300 TO-18 - BSY95A 20 15 200 , -18 - BSY95A 15 200 0.35 10 0.2 50 200 10 200 10 (note 3) T0-18 - 2N708 15 - 0.4 10 1 30 120 10 300
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BSY52 BCY56 2N2904 2N2906 2N2907 2N2369A

BSY95A

Abstract: BSY95A Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 2.54 (0.100) Nom. 3 1 2 TO18 (TO206AA) PINOUTS 1 ­ Emitter Parameter 2 ­ Base 3 ­
Semelab
Original
Abstract: BSY95A Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT Semelab
Original
Abstract: BSY95A Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT Semelab
Original

N3053

Abstract: BC107 200 10 300 TO-18 â'" 2N706 25 20 â'" 0-6 10 1 20 â'" 10 200 10 300 TO-18 â'" BSY95A 20 15 200 0-35 , 300 T018 â'" BSY95A 20 15 200 0-35 10 0-2 50 200 10 200 10 300 T018 tAtTcase=45"C TO-18 TOâ'"39 9
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BFX85 BFX84 ZT189 2N2102 2N4036 BCY65E

bc327c

Abstract: BC337C 10 300 TO-18 - BSY95A 20 15 200 0.35 10 0.2 50 200 10 200 10 300 TO-18 - / TO-18 TO-39 MC3 NPN , 20 60 10 - - 12 15 10 TO-18 - 2N2369 15 500 0.24 10 1 40 120 10 - - 12 18 10 TO-18 - BSY95A 15 200
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BC338C bc327c BC337C bc328a ZTX651 ZT Ferranti BFV52 BC338A BC338B ZTX753 ZTX752

BS3934

Abstract: SO-12A ZETEX SEMICONDUCTORS 35C 1 m e}C,7D570 DDDJ* c 32C 01 760 0 ~ T35"-o / NPN SW ITCHIN G - continued Max v CEO 'c V BFY51 2N2218 2N2219 2N2220 2N2221 2N2222 ZT80 ZT87 BFY52 2N706A 2N2477 2N2476 2N2369A 2N2368 2N2369 BSY95A 2N708 2N2938 2N2475 2N709 * Typical 30 30 30 30 30 30 25 25 20 20 20 20 15 15 15 15 15 13 6 6 mA Max VcE(sat) at V ·c mA 150 150 150 150 150 150 10 10 150 10 150 150 10 10 10 10 10 50 20 3 >B mA 15 15 15 15 15 15 2 2 15 1 3-75 7-5 1 1 1 0 2 1 1 -6 0 -66
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BS3934 SO-12A GDD17 S0-12A

P346A

Abstract: ME8003 Micro- Electronics Semiconductors N PN Transistors NPN Switching Transistors REFERENCE TABLE Code Vcao V Vceo V min hFE max @lc mA VCE V â'¢ at) @lc ma ton ns toff ns fr MHz Stock No. Outline Drawing No. BSX19 40 15 20 60 10 0.25 10 7 15 400 19552B 65 BSX20 40 15 40 120 10 0.25 10 7 18 500 19553X 65 BSY95A 20 15 50 200 10 0.35 10 â'" â'" 200 19572G 65 cm e 25 12 40 60 10 0.5 50 65 80 250 19573C 65 ME9001 40 15 40 120 10 0.25 10 12 18 400 19331F 77 ME9002 30 12 30 150 10 0.25 10 15 20 400
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P346A ME3002 BC117 ME8003 ME6002 ME6003 bc142 me3001 19332D ME9003 31287B 19587B ME3001

BC178

Abstract: BC107 10 200 10 300 TO-18 - BCY57 25 20 100 0.2+ 100 10 200 800 2 350+ 10 300 TO-18 - BSY95A 20 15 200
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T25 45c

2N2476

Abstract: 2N2218 12 18 10 TO-18 - BSY95A 15 200 0.35 10 0.2 50 200 10 200 10 (note 3) TO-18 - 2N708 15 - 0.4 10 1
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ZT80 zt 213

2369

Abstract: T018 200 10 300 TO-18 â'" 2N706 25 20 â'" 0-6 10 1 20 â'" 10 200 10 300 TO-18 â'" BSY95A 20 15 200 0-35 , 300 T018 â'" BSY95A 20 15 200 0-35 10 0-2 50 200 10 200 10 300 T018 tAtTcase=45"C TO-18 TOâ'"39 9
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2369 T018 T072 NKT13329 16229 PN2368 706/A

BCY78

Abstract: N3053 200 10 300 TO-18 â'" 2N706 25 20 â'" 0-6 10 1 20 â'" 10 200 10 300 TO-18 â'" BSY95A 20 15 200 0-35 , 300 T018 â'" BSY95A 20 15 200 0-35 10 0-2 50 200 10 200 10 300 T018 tAtTcase=45"C TO-18 TOâ'"39 9
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ZT211 BCY77 2N2484 ZT210 ZT183 ZT184

2N709

Abstract: bc108 IC Micro- Electronics Semiconductors N PN Transistors NPN Switching Transistors REFERENCE TABLE Code Vcao V Vceo V min hFE max @lc mA VCE V â'¢ at) @lc ma ton ns toff ns fr MHz Stock No. Outline Drawing No. BSX19 40 15 20 60 10 0.25 10 7 15 400 19552B 65 BSX20 40 15 40 120 10 0.25 10 7 18 500 19553X 65 BSY95A 20 15 50 200 10 0.35 10 â'" â'" 200 19572G 65 cm e 25 12 40 60 10 0.5 50 65 80 250 19573C 65 ME9001 40 15 40 120 10 0.25 10 12 18 400 19331F 77 ME9002 30 12 30 150 10 0.25 10 15 20 400
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BCY71 10-10K BCY70 N2605 N2604 BCY72
Showing first 20 results.