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Part : BSX33 Supplier : STMicroelectronics Manufacturer : Chip One Exchange Stock : 1,800 Best Price : - Price Each : -
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BSX33 Datasheet

Part Manufacturer Description PDF Type
BSX33 Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package Original
BSX33 Micro Electronics Medium Power Amplifier and Switches Scan
BSX33 Micro Electronics Semiconductor Device Data Book Scan
BSX33 N/A Basic Transistor and Cross Reference Specification Scan
BSX33 N/A Transistor Replacements Scan
BSX33 N/A Shortform Transistor PDF Datasheet Scan
BSX33 N/A Shortform Transistor PDF Datasheet Scan
BSX33 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BSX33 N/A Semiconductor Master Cross Reference Guide Scan
BSX33 N/A Shortform Transistor Datasheet Guide Scan
BSX33 N/A Shortform Electronic Component Datasheets Scan
BSX33 SGS-Ates Shortform Data Book 1977/78 Scan
BSX33 SGS-Ates Misc. Data Book Scans 1975/76 Scan
BSX33 SGS-Ates Small Signal Transistors 3rd Edition 1978 Scan
BSX33 SGS-Ates Semiconductor Data Book 1976/77 Scan
BSX33 STMicroelectronics Shortform Data Book 1988 Scan
BSX33CSM Semelab Bipolar NPN Device in a Hermetically Sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications Original
BSX33DCSM Semelab Dual Bipolar NPN Devices in a Hermetically Sealed LCC2 Ceramic Surface Mount Package for High Reliability Applications Original

BSX33

Catalog Datasheet MFG & Type PDF Document Tags

BSX33

Abstract: SGS-THOMSON R!tlD(EæilLI(g'iri©iD(SS BSX33 HIGH-VOLTAGE, HIGH-CURRENT SWITCH D E S C R IP T IO N The BSX33 is a silicon planar epitaxial NPNtran-sistor in Jedec TO-18 metal case, designed , Temperature December 1988 1/5 BSX33 T H E R M A L DATA Rth j-case Rth j-amb Thermal Resistance , BSX33 DC Current Gain. Collector-emitter Saturation V o lta g e . Base-emitter Saturation Voltage , Cutoff Current. G -3 117 ^ 7# T SGS-THOMSON raeRoaLieTfRwes 3/5 BSX33 TO-18 MECHANICAL
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OCR Scan

BSX33

Abstract: BSX33 HIGH-VOLTAGE, HIGH-CURRENT SWITCH DESCRIPTION The BSX33 is a silicon planar epitaxial NPN , 1988 BSX33 THERMAL DATA R t h j- cas e R t h j -amb Thermal Resistance Junction-case Thermal , ­ IB2 = 7.5 mA * Pulsed : pulse duration = 300u s, duty cycle = 1%. 2/5 BSX33 DC Current , Current Gain. Collector-base Capacitance. Collector Cutoff Current. 3/5 BSX33 TO , 4/5 BSX33 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON
STMicroelectronics
Original

BSX33

Abstract: 3QE D â  T'ÌS^SB? DQ31UÃ'Y H m -p2>S-[| SCS-THOMSON _BSX33 s G S-THOMSON HIGH-VOLTAGE, HIGH-CURRENT SWITCH DESCRIPTION The BSX33 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for high voltage and high current switching applications. It features useful current , , Storage and Junction Temperature - 55 to 200 eC December 1988 1/3 239 _BSX33 * THOMSON_ 30E T , . Collector-base Capacitance. CCBO (pF) BSX33 Tâ'"35â'"11 Collector-emitter Saturation Voltage. W2 lc&nM High
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OCR Scan
Q310S 100HA

BSX33

Abstract: -18! 193 7/76 BSX33 THERMAL DATA Rth i-case Thermal resistance junction-case max 97 °C/W Rth j-amb , 194 BSX33 ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max. Unit , Collector-emitter saturation voltage voltage 195 BSX33 Base - emitter saturation voltage High frequency current
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OCR Scan

2SC1313

Abstract: bc182c 2S01852 2SC3052 2N339 2N5189 BC324 BC324 BCW44 BC254 BC255 BFY56B BSX33 BSX33 IT128 2N4879 ~~gJ
Advanced Semiconductor
Original
2SC734GR 2SC1313 2SC1815LBL 2N243 2N244 MPS5856 bc182c NPN 2sC1685 2SC3247K 2SC1815LGR 2SC2458LGR 2SC3134H6 2SC3361S6 TEC90140
Abstract: BSX33 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT) HFE ft Semelab
Original
Abstract: C1 1ÂuF C5 1000ÂuF MUTE PLAY 5V 0 MUTE Q1 BSX33 R2 15K C2 100ÂuF IN (L) 7 , OUT (L) IN- (L) - 1ÂuF 15K 4 8 BSX33 30K 4.7â"¦ 0.1ÂuF 9 1ÂuF OUT STMicroelectronics
Original
TDA7269A D94AU085

tda7269a

Abstract: BSX33 0 MUTE Q1 BSX33 R2 15K C2 100uF IN (L) 7 + 4 8 IN- (L) 9 C4 1uF , MUTE + OUT (L) IN- (L) - 1uF 15K 4 8 BSX33 30K 4.7 0.1uF 9 1uF
STMicroelectronics
Original

BSX33

Abstract: BSX33 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 2.54 (0.100) Nom. 3 1 2 TO18 (TO206AA) PINOUTS 1 ­ Emitter Parameter 2 ­ Base 3 ­
Semelab
Original

BSX33

Abstract: BSX33 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT) hFE ft
Semelab
Original

BFR99

Abstract: BC377 '" 50 BSX33 0.3 150 60 800 500 25 75/260 100 BC 377 0.7 500 300 typ. â'" 375 40 75/260 100 BC 378
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OCR Scan
BFR38 BFX89 BFR99 2N956 BC377 UHF UHF Transistors transistor 2n 3839 t 3866 transistor

BU102

Abstract: BDX71 BSX32 40 0.01-500 â'" 22 40 60-150 100 19082H 66 BSX33 55 0.1-500 _ 120 350 40-80 150 19083F 65 BSX39
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OCR Scan
BSV90 BSV92 BSV95 BSX20 BSX27 2N2475 BU102 BDX71 40636 2N3055V 30801C BSV91 30803X

BFR99

Abstract: BFR38 ) (mA) (MHz) (ns) (mW) 55 50/â'" 50 BSX33 0.3 150 60 800 500 25 75/260 100 BC 377 0.7 500 300 typ. â
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OCR Scan
2N918 BFX73 BFR99A 2N3137 BFR36 2N5109 bfr18 uhf amplifier bc 377 BFY90

Transistor BSX 33

Abstract: BSX33 50mA VCE = 10V f = 20MHz 60 90 MHz 178 BSX33 ELECTRICAL CHARACTERISTICS (continued) Parameter Test
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Transistor BSX 33 Transistor BSX 95 100MA

BU102

Abstract: 2N914 19082H 66 BSX33 55 0.1-500 _ 120 350 40-80 150 19083F 65 BSX39 20 10-300 8 9 15 40-120 30 19085B 65
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BSX26 2N914 2N2369 2N2369A BC119 BSX28 transistor bu102 bsx30 BD663B BSX20 2n2222a 35250H 35251F 35252D

BSY86

Abstract: BSW65 150 10 0.3 0.15 300 8 - BSW65 N TO-39 800 1 80 30 500 5 0.4 0.5 80+ 35 BSX33 N TO-18 500 1 40 40
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OCR Scan
BFY67 BFY68 BFY72 BFY94 BSS59 BSV16 BSY86 BSY90 bsv82 BSW61 BSY87

BSW66

Abstract: BU208A REQ NPN T018 15 0.5 40-120 l/10m 500H 0.36 BSX32 NPN T039 40 1 60-150 1/0.1 300H 0.8 BSX33 HR NPN
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OCR Scan
BLY49 BLY49A BLY50 BLY50A BSS15 BSS33 BSW66 BU208A BSW67

BSX33

Abstract: MULTIWATT11 5V 0 MUTE Q1 BSX33 R2 15K C2 100uF IN (L) 7 4 IN- (L) 9 C4 1uF IN (R
STMicroelectronics
Original
TDA7499 MULTIWATT11 D95AU316

bsy85

Abstract: BSW54 0.15 300 8 - BSW65 N TO-39 800 1 80 30 - 500 5 0.4 0.5 80+ 35 â'" BSX33 N TO-18 500 1 40 40 _ 150 10
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OCR Scan
BSW54 BSW62 BSW63 BSW64 BSX45 BSX46 bsy85 MA8003 BSY52 CL168 TO-92B

power amplifier IC 4440

Abstract: BFR99 ) (mA) (MHz) (ns) (mW) 55 50/â'" 50 BSX33 0.3 150 60 800 500 25 75/260 100 BC 377 0.7 500 300 typ. â
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OCR Scan
TQ-60 power amplifier IC 4440 CE-28 2N5016 bf 225 t 3866 t 3866 power transistor T0-60

bs33

Abstract: to-39 transistors BSX33 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT) HFE ft
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OCR Scan
BS33A BFR20 BFR21 BFX39 BFX95A BFX97A bs33 to-39 transistors 35-130 BSS 130 BSS 97

2N2222A 338

Abstract: TFK 949 19082H 66 BSX33 55 0.1-500 _ 120 350 40-80 150 19083F 65 BSX39 20 10-300 8 9 15 40-120 30 19085B 65
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OCR Scan
2N2222A 338 TFK 949 ac128 ad161 BSY19 halbleiter index transistor 2CY17 2CY18 2CY19 2CY20 2CY21 500MA

2N3055

Abstract: 2N3055H A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS C O N V E N T I O N A L PAC K AG E S TO46 TO72 TO71 TO18 TO5 TO39 TRANSISTORS, MOSFETS, DIODES, VOLTAGE REGULATORS TO46 TO18 (cont) TO39 (cont) TO39 (cont) TO39 (cont) TO77(cont) Bipolar Bipolar Bipolar Bipolar Linear Bipolar 2N2604-05 2N2907A-T46 2N3485-86 /A 2N3508-09 2N5581-82 BC182-TO46 BC212-TO46 BFY74-77 BSV91 BSX20-21 BSX33,36 BSX39-40 BSX52 A/B
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OCR Scan
U3158 2N2891 2N3055 BDY25C BSW68A BUV26 2N3055H bu103a bu102 TRANSISTOR 2N1890 2N1893 2N2060 2N2102 2N2102LL
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