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BSV15/6 Datasheet

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BSV15-6 N/A Shortform Transistor PDF Datasheet
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BSV15-6 N/A Shortform Transistor PDF Datasheet
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BSV15/6 N/A Shortform Transistor Datasheet Guide
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BSV15-6 N/A Semiconductor Master Cross Reference Guide
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1 pages,
118.31 Kb

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BSV15-6 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package
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1 pages,
10.55 Kb

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BSV15-6 Siemens PNP SILICON PLANAR TRANSISTORS
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8 pages,
262.18 Kb

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BSV15-6 Siemens Semiconductor Data Book (German) 1976/77
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260.84 Kb

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BSV15/6

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Abstract: l l N AMER PHILIPS/DISCRETE b^E ■ J> bbS3T31 002767b 3 m I IAPX BSV15 to 17 , DATA BSV15 Collector-emitter voltage (open base) V c e Q max- BSV16 BSV16 BSV17 BSV17 40 60 80 , > D.C. current gain —1£ = 100 mA; — MHz 50 BSV15-10 BSV15-16 BSV16-10 BSV16-10 BSV16-16 BSV16-16 BSV17 BSV17 , 12,7 mm. Qualification approved to CECC 50 002-131 6,6 „ _12,7_„ N AUER PHILIPS/DISCRETE bHE D bb53H31 0027677 E l l » A P X ff BSV15 to 17 J V RATINGS Limiting values ... OCR Scan
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10 pages,
348.74 Kb

TEXT
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Abstract: Ambient R8JA 140 °C/W BSV15-10, thru BSV17-10 BSV17-10, 46 16 CASE 79-04, STYLE 1 TO-39 (TO-205AD) AMPLIFIER , ICES (VCE - 40 V) 50 nA (VCE - 40 V. TA = 150°C) BSV15 Series 50 (iA (VCE - 60 V) 50 nA , Series 50 HA (Vce = 40 v, vbe = -0.2 v, ta = ioo°c) BSV15 Series ICEX 50 MA (Vce = eo v, vb'e = -0.2 , (1) BSV15 Series 40 BSV16 BSV16 Series 60 BSV17 BSV17 Series 80 Collector-Emitter Breakdown Voltage BSV15 Series V(BR)CES 40 V 0C = 10 |iA) BSV16 BSV16 Series 60 BSV17 BSV17 Series 90 Emitter-Base Breakdown ... OCR Scan
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2 pages,
105.2 Kb

MOTOROLA TO205AD BAY63 BSV15 BSV17 BSv15 MOTOROLA BSV15-10 BSV15-16 2N4405 LTNV BSV16 BSV17-10 TEXT
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Abstract: N AMER PHILIPS/DISCRETE fc.'ÎE J> I I ^53^31 □027ß7b 341 I BSV15 to 17 IAPX SILICON , . current gain -lc = 100 mA; -VCE = 1 V fT hFE > -vCEO max. BSV15 BSV 16 BS VI7 V 40 60 80 -'c max , Dimensions in mm 8,5 max _ 6,6 _ max -10,51 ■^max . 12,7 _ min Maximum lead diameter is guaranteed , Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE LIE D BSV15 to 17 _J b^E 3> bbsa^i , ) BSV15 BSV16 BSV16 BSV17 BSV17 Collector-emitter voltage (open base) -VCEO max. 40 60 80 V Collector-emitter ... OCR Scan
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10 pages,
264.51 Kb

BSV15-10 BSV15 BSV17-10 BSV17 bsv16-16 BSV16-10 BSV16 Transistor 5331 TEXT
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Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 M3D111 BSV15; BSV16 BSV16; BSV17 BSV17 PNP medium power , BSV15; BSV16 BSV16; BSV17 BSV17 FEATURES PINNING · High current (max. 1 A) PIN · Low voltage (max. 80 , . MAX. UNIT open emitter BSV15 - -40 V BSV16 BSV16 - -60 V - -90 V BSV15 - -40 V BSV16 BSV16 - -60 V BSV17 BSV17 - -80 V - -2 A Tamb 25 , current gain IC = -100 mA; VCE = -1 V BSV15-10; BSV16-10 BSV16-10; BSV17-10 BSV17-10 BSV15-16; BSV16-16 BSV16-16 fT 1997 ... Philips Semiconductors
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8 pages,
50.76 Kb

Transistor Bsv16 BSV17 BSV16-16 BSV15-16 BSV15 BSV15-10 BSV17-10 BSV16 BSV16-10 M3D111 TEXT
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Abstract: BSV 15, BSV 16, BSV 17 Permissible pulse load v = parameter £ BSV15. 1BSV16 1BSV16. BSV17 BSV17 Static forward current transfer ratio />FE=/(/c) yCE = 1 V; 7"amb = parameter BSV15-6, BSV16-6, BSV17-6 - , / 100 160°G 'am 6 Current gain bandwidth product /T=/(/c) \ZCE5S 10 V (typical cureve) MHz BSV15 , BSV 15 BSV 15 BSV 15 BSV 15 BSV 16 BSV 16 BSV 16 BSV 16 BSV 17 BSV 17 BSV 17 hrE group 6 10 16 , ; /B1«-/B2«5 mA) BSV15 BSV16 BSV16 BSV17 BSV17 >50 >50 MHz ^CBO 20 ( ... OCR Scan
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8 pages,
265.68 Kb

Q62702-S212 Q62702-S207 jc100 BSV17 BSV16 BSV15 Q62702-S208 TEXT
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Abstract: PNP medium power transistor in a TO-39 metai package. 1 BSV15; BSV16 BSV16; BSV17 BSV17 PINNING PIN 1 2 3 , . QUICK REFERENCE DATA SYMBOL V cbO BSV15 BSV16 BSV16 BSV17 BSV17 VcEO collector-emitter voltage BSV15 BSV16 BSV16 BSV17 BSV17 ICM , V V V V A W W peak collector current total power dissipation DC current gain BSV15-10; BSV16-10 BSV16-10; BSV17-10 BSV17-10 BSV15-16; BSV16-16 BSV16-16 V 63 100 hFE fT transition frequency lc = -50 mA; VCe = , System (IEC 134). SYMBOL VCBO BSV15; BSV16 BSV16; BSV17 BSV17 PARAMETER collector-base voltage BSV15 BSV16 BSV16 ... OCR Scan
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3 pages,
96.09 Kb

BSV17 BSV17-10 BSV16-16 BSV16-10 Transistor Bsv16 bsv15 BSV16 TEXT
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Abstract: TRANSISTORS BSV15 BSV16 BSV16 BSV17 BSV17 TO- 39 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BSV15 BSV16 BSV16 BSV17 BSV17 , SYMBOL TEST CONDITION BSV15 BSV16 BSV16 BSV17 BSV17 ICES VBE=0, VCE=40V , IC=0.1mA, VCE=1V DC Current BSV15-10 BSV16-10 BSV16-10 BSV17-10 BSV17-10 BSV15-16 BSV16-16 BSV16-16 MIN TYP MAX 20 20 20 - - 30 30 - UNIT - IC=100mA, VCE=1V BSV15-10 BSV16-10 BSV16-10 BSV17 BSV17 , 160 100 100 - 250 250 IC=500mA, VCE=1V BSV15-10 BSV16-10 BSV16-10 BSV17-10 BSV17-10 Cc - BSV15 ... Continental Device India
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3 pages,
44.6 Kb

BSV17 BSV16-16 BSV16-10 BSV16 BSV15-10 BSV15 BSV15-16 all ic datasheet BSV17-10 TEXT
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Abstract: BFG67 BFG67 BSV15 BSR30/31 BSR30/31 PH2222 PH2222 BSR13 BSR13 BFQ23 BFQ23 BFT93 BFT93 BSV15-6 BSR30 BSR30 PH2222A PH2222A BSR14 BSR14 BFQ24 BFQ24 BFT93 BFT93 BSV15-10 BSR30 BSR30 , type BC556B BC556B BC856B BC856B BCX58 BCX58 BCW60 BCW60 BD135 BD135 BCX54 BCX54 BC557 BC557 BC857 BC857 BCX59 BCX59 BCX70 BCX70 BD135-6 BCX54-6 BCW69/70 BCW69/70 BCX78 BCX78 , BC557B BC557B BC857B BC857B BCF70 BCF70 BD136-6 BCX51-6 BCW70 BCW70 BCY57 BCY57 BC849 BC849 BD136-10 BD136-10 BCX51-10 BCX51-10 BC557C BC557C BC857C BC857C BCF32/33 BCF32/33 BD136-16 BD136-16 BCX51-16 BCX51-16 BC558 BC558 BC858 BC858 BCY58 BCY58 BC849 BC849 BD137 BD137 BCX55 BCX55 BCW29/30 BCW29/30 BCW60 BCW60 fain. BD137-6 BCX55-6 BC558A BC558A BC858A BC858A , BCX52 BCX52 BCW30 BCW30 BCY58-IX BCY58-IX BC849B BC849B BD138-6 BCX52-6 BC558C BC558C BC858C BC858C BCW60C BCW60C BD138-10 BD138-10 BCX52-10 BCX52-10 BC559 BC559 BC859 BC859 ... OCR Scan
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4 pages,
358.51 Kb

2N1711 smd BC157 BCw610 BF936 BF964 BC546 smd BS551 BF606A bc107 smd bf982 BC547 smd BF980 BFG65 2N4858 smd 2n2907 smd 0D12DE BF966 SMD 0D12DE BF981 0D12DE PMBT2369A 0D12DE bd139 smd 0D12DE BAV90 0D12DE 0D12DE 0D12DE TEXT
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Abstract: SILICON PLANAR EPITAXIAL TRANSISTORS BSV15 BSV16 BSV16 BSV17 BSV17 TO- 39 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BSV15 BSV16 BSV16 BSV17 BSV17 VCEO 40 60 80 Collector -Emitter Voltage VCES 40 60 90 , Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION BSV15 BSV16 BSV16 BSV17 BSV17 ICES VBE=0, VCE=40V , ) DESCRIPTION SYMBOL TEST CONDITION hFE IC=0.1mA, VCE=1V DC Current BSV15-10 BSV16-10 BSV16-10 BSV17-10 BSV17-10 BSV15 , =1V BSV15-10 BSV16-10 BSV16-10 BSV17-10 BSV17-10 Emitter Capacitance Ce Transition Frequency ft Small Signal ... Continental Device India
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3 pages,
87.68 Kb

BSV17 BSV15-16 BSV15-10 BSV15 BSV17-10 BSV16 BSV16-16 BSV16-10 TEXT
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Abstract: Datasheet BSV15, -10, -16 BSV16 BSV16, -10, -16 central BSV17 BSV17, -10, Semiconductor Corp. PNP , SEMICONDUCTOR BSV15 series types are PNP Silicon Epitaxial Transistors designed for general purpose amplifier and switching applications. MAXIMUM RATINGS (TA=25°C) symbol BSV15 BSV16 BSV16 BSV17 BSV17 UNITS , noted) BSV15 BSV16 BSV16 BSV17 BSV17 symbol TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS 'CBO , =100mA, lB1=lB2=5.0mA 500 500 500 ns {off lc=100mA, lB1=lB2=5.0mA 650 650 650 ns BSV15-10 BSV16 BSV16 ... OCR Scan
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2 pages,
86.05 Kb

ic lg 631 BSV17-10 BSV17 BSV16-16 BSV16-10 BSV15-16 BSV15-10 BSV15 BSV16 TEXT
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Abstract: -2, 56, 63-64 BLX12 BLX12,48 BLY11 BLY11 BSS44 BSS44 BSV15 /6/10 BSV60 BSV60,64 BSW66-68 BSW66-68 /A (cont) BSX45-47 BSX45-47,59-64 ... Semelab
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1 pages,
128.19 Kb

SML4003 2N3907 DATASHEET 2n3931 2N4231..33 2N5583 2N3535 bc377-378 BCY87 2N5252 BSV91 2N4122-18 BC107-109 2N3680 2N3209 2N3036L 2N6534 BSV81 2N3409 2c415 2N3907 TEXT
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Abstract: BSV15-6 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 40V 5.08 (0.200) typ. IC = 1A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS ... Semelab
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1 pages,
11.35 Kb

BSV15-6 TEXT
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Abstract: BSV15-6 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175Ãu I(CBO) Max. (A)100n× @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.63Â h(FE) Max. Current gain. @I(C) (A) (Test Condition)100m @V(CE) (V) (Test Condition)1.0 f(T) Min. (Hz) Transition Freq50M @I(C) (A) (Test Condition) @V(CE) (V ... American Microsemiconductor
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1 pages,
7.19 Kb

BSV15-6 TEXT
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Abstract: BSV15-6 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 40V 5.08 (0.200) typ. IC = 1A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS ... Semelab
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datasheet

1 pages,
10.51 Kb

BSV15-6 TEXT
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Abstract: BSV15-6 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021) dia. IC = 1A 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications ... Semelab
Original
datasheet

1 pages,
10.55 Kb

BSV15-6 TEXT
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Abstract: as Acrobat PDF files. Bipolar Products PRODUCT BSV15 BSV15 BSV15-10 BSV15-10 BSV15-6 Polarity PNP PNP PNP ... Semelab
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datasheet

14 pages,
90.51 Kb

bu326 BSW68A 150v 3A pnp 2A 40V NPN BSS71 TEXT
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Abstract: -39: Industry Type: BSV15-10 BSV15-10 STI Type: BSV15-6 Notes: Polarity: PNP Power Dissipation: 1.0 Tj: 200 VCBO , Style: TO-205AD/TO-39: Industry Type: BSV15-6 STI Type: BSV16-10 BSV16-10 Notes: Polarity: PNP Power ... Original
datasheet

75 pages,
102.2 Kb

2N3435 2N3544 2N3624 2N3680 2N3594 2N3587 bf200 datasheet 2N3775 BF316 BFX36 case BFX89 BF479 BF316A BFY82 BFY70 BF200 BF251 BF200 2N5652 BF200 BF272 BF200 2N5651 BF200 BF689 BF200 BF200 BF200 TEXT
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* *SRC=BSV15-6;BSV15_6;BJTs PNP;Gen. Purpose;40V 1A .MODEL BSV15_6 PNP (IS=506F NF=1 BF=70 VAF=113 IKF=.5 * *SRC=2N2907 2N2907;QN2907 QN2907;BJTs PNP;Gen. Purpose;40V 600mA .MODEL QN2907 QN2907 PNP (IS=1.1E-12 1E-12 BF=200 BR=6 NF=1.21 + RC=.6 IKF=100E-3 100E-3 VAF=50 XTB=1.5 NE=1.9 ISE=1.3E-11 3E-11 + CJE=23PF VJE=.85 MJE=1.25 CJC=19PF VJC=.5 .6 Amp 200 MHz SiPNP Transistor 12-01-1990 * *SRC=2N5086 2N5086;QN5086 QN5086;BJTs PNP;Amplifier;50V CJE=15.6P CJC=20.8P TF=636P TR=63.7N) * 40 Volt .6 Amp 250 MHz SiPNP Transistor 04-11-1991
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BSV15-6 N/A Medium Power, General Purpose

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