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BSV15/6 Datasheet

Part Manufacturer Description PDF Type
BSV15-6 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package Original
BSV15-6 N/A Shortform Transistor PDF Datasheet Scan
BSV15-6 N/A Shortform Transistor PDF Datasheet Scan
BSV15/6 N/A Shortform Transistor Datasheet Guide Scan
BSV15-6 N/A Semiconductor Master Cross Reference Guide Scan
BSV15-6 Siemens PNP SILICON PLANAR TRANSISTORS Scan
BSV15-6 Siemens Semiconductor Data Book (German) 1976/77 Scan

BSV15/6

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BSV15-6 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 40V 5.08 (0.200) typ. IC = 1A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS Semelab
Original
Abstract: BSV15-6 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100n× @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.63Ã' h(FE) Max. Current gain. @I(C) (A) (Test Condition)100m @V(CE) (V) (Test Condition)1.0 f(T) Min. (Hz) Transition Freq50M @I(C) (A) (Test Condition) @V(CE) (V American Microsemiconductor
Original

BSV15-6

Abstract: BSV15-6 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021) dia. IC = 1A 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications
Semelab
Original
Abstract: BSV15-6 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 40V 5.08 (0.200) typ. IC = 1A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS Semelab
Original

Q62702-S208

Abstract: Q62702-S207 BSV 15, BSV 16, BSV 17 Permissible pulse load v = parameter £ BSV15. 1BSV16. BSV17 Static forward current transfer ratio />FE=/(/c) yCE = 1 V; 7"amb = parameter BSV15-6, BSV16-6, BSV17-6 - , / 100 160°G 'am 6 Current gain bandwidth product /T=/(/c) \ZCE5S 10 V (typical cureve) MHz BSV15 , BSV 15 BSV 15 BSV 15 BSV 15 BSV 16 BSV 16 BSV 16 BSV 16 BSV 17 BSV 17 BSV 17 hrE group 6 10 16 , ; /B1«-/B2«5 mA) BSV15 BSV16 BSV17 >50 >50 MHz ^CBO 20 (
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OCR Scan
Q62702-S207 Q62702-S208 Q62702-S212 jc100 7mb150 Q82702-S209 Q62702-S 40VBSV15

BAV90

Abstract: bd139 smd BFG67 BSV15 BSR30/31 PH2222 BSR13 BFQ23 BFT93 BSV15-6 BSR30 PH2222A BSR14 BFQ24 BFT93 BSV15-10 BSR30 , type BC556B BC856B BCX58 BCW60 BD135 BCX54 BC557 BC857 BCX59 BCX70 BD135-6 BCX54-6 BCW69/70 BCX78 , BC557B BC857B BCF70 BD136-6 BCX51-6 BCW70 BCY57 BC849 BD136-10 BCX51-10 BC557C BC857C BCF32/33 BD136-16 BCX51-16 BC558 BC858 BCY58 BC849 BD137 BCX55 BCW29/30 BCW60 fain. BD137-6 BCX55-6 BC558A BC858A , BCX52 BCW30 BCY58-IX BC849B BD138-6 BCX52-6 BC558C BC858C BCW60C BD138-10 BCX52-10 BC559 BC859
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OCR Scan
BC157 BAV90 bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd 0D12DE BA243 BC146/02 BC849B/C BC338 BC818

2A 40V NPN

Abstract: BSW68A Results Part number search for devices beginning "BSV15" Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT BSV15 BSV15-10 BSV15-6 Polarity PNP PNP PNP , Searched through 3083 records and found 6 products matching your criteria. Top of Page If you are , 130MHz 130MHz 130MHz PD 5W 5W 5W 5W 5W 5W Searched through 3083 records and found 6 products matching , 3083 records and found 6 products matching your criteria. Top of Page If you are unable to find a
Semelab
Original
2A 40V NPN BSW68A 150v 3A pnp bu326 BSS71 BSS71CSM BSS71CSM-JQR-B BSS71DCSM BSS71DCSM-JQR-B BSS74

2N3907

Abstract: 2c415 -2, 56, 63-64 BLX12,48 BLY11 BSS44 BSV15 /6/10 BSV60,64 BSW66-68 /A (cont) BSX45-47,59-64 , BC300-304 4/5/6, 323 BC440-441 /4/5/6 BC460-461 /4/5/6 BF257-259 BF337-338/ 335 BFQ38S BFS93 , 2N6211-12, 45 2N6260-61, 63-64 2N6296-6301 2N6312-18, 72-74 2N6420-25 /A 2N6500 2N6534-37 /B BDW25 /6
Semelab
Original
BSV91 BSX39-40 2N3209 2N4122-18 BC107-109 BSV81 2N3907 2c415 2N3409 2N3680 2N2604-05 2N2907A-T46 2N3485-86 2N3508-09 2N5581-82 BC182-TO46

BF689

Abstract: 2N5651 -39: Industry Type: BSV15-10 STI Type: BSV15-6 Notes: Polarity: PNP Power Dissipation: 1.0 Tj: 200 VCBO , Style: TO-205AD/TO-39: Industry Type: BSV15-6 STI Type: BSV16-10 Notes: Polarity: PNP Power , : hfe: fT: 50 Case Style: TO-206AA/TO-18: Industry Type: BSS77 STI Type: BSV15 Notes: Polarity , : 1.0 VCE A: 500 hfe: 20 fT: 50 Case Style: TO-205AD/TO-39: Industry Type: BSV15 STI Type: BSV15 , : BSV15-16 STI Type: BSV15-10 Notes: Polarity: PNP Power Dissipation: 7.0 Tj: 200 VCBO: 40 VCEO: 40
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Original
BF183 BF689 2N5651 2N5652 BF272 BF251 BFY70 BF200 BF206 BF208 BF207 BF209
Abstract: l l N AMER PHILIPS/DISCRETE b^E â  J> bbS3T31 002767b 3 m I IAPX BSV15 to 17 , DATA BSV15 Collector-emitter voltage (open base) V c e Q max- BSV16 BSV17 40 60 80 , > D.C. current gain â'"1£ = 100 mA; â'" MHz 50 BSV15-10 BSV15-16 BSV16-10 BSV16-16 BSV17 , 12,7 mm. Qualification approved to CECC 50 002-131 6,6 â'ž _12,7_â'ž N AUER PHILIPS/DISCRETE bHE D bb53H31 0027677 E l l » A P X ff BSV15 to 17 J V RATINGS Limiting values -
OCR Scan
S3T31 BSV15-10 BSV15-16 BSV17-10 53H31 S3S31

BSV16

Abstract: BSV17-10 Ambient R8JA 140 °C/W BSV15-10, thru BSV17-10, 46 16 CASE 79-04, STYLE 1 TO-39 (TO-205AD) AMPLIFIER , ICES (VCE - 40 V) 50 nA (VCE - 40 V. TA = 150°C) BSV15 Series 50 (iA (VCE - 60 V) 50 nA , Series 50 HA (Vce = 40 v, vbe = -0.2 v, ta = ioo°c) BSV15 Series ICEX 50 MA (Vce = eo v, vb'e = -0.2 , (1) BSV15 Series 40 BSV16 Series 60 BSV17 Series 80 Collector-Emitter Breakdown Voltage BSV15 Series V(BR)CES 40 V 0C = 10 |iA) BSV16 Series 60 BSV17 Series 90 Emitter-Base Breakdown
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OCR Scan
2N4405 BAY63 LTNV BSv15 MOTOROLA MOTOROLA TO205AD

Transistor 5331

Abstract: BSV16 N AMER PHILIPS/DISCRETE fc.'ÃE J> I I ^53^31 â¡027Ã7b 341 I BSV15 to 17 IAPX SILICON , . current gain -lc = 100 mA; -VCE = 1 V fT hFE > -vCEO max. BSV15 BSV 16 BS VI7 V 40 60 80 -'c max , Dimensions in mm 8,5 max _ 6,6 _ max -10,51 â ^max . 12,7 _ min Maximum lead diameter is guaranteed , Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE LIE D BSV15 to 17 _J b^E 3> bbsa^i , ) BSV15 BSV16 BSV17 Collector-emitter voltage (open base) -VCEO max. 40 60 80 V Collector-emitter
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OCR Scan
Transistor 5331 Silicon Epitaxial Planar Transistor philips 7Z62505

BSV16-10

Abstract: BSV16 DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSV15; BSV16; BSV17 PNP medium power , BSV15; BSV16; BSV17 FEATURES PINNING · High current (max. 1 A) PIN · Low voltage (max. 80 , . MAX. UNIT open emitter BSV15 - -40 V BSV16 - -60 V - -90 V BSV15 - -40 V BSV16 - -60 V BSV17 - -80 V - -2 A Tamb 25 , current gain IC = -100 mA; VCE = -1 V BSV15-10; BSV16-10; BSV17-10 BSV15-16; BSV16-16 fT 1997
Philips Semiconductors
Original
Transistor Bsv16 MAM334 SCA54

BSV16

Abstract: bsv15 PNP medium power transistor in a TO-39 metai package. 1 BSV15; BSV16; BSV17 PINNING PIN 1 2 3 , . QUICK REFERENCE DATA SYMBOL V cbO BSV15 BSV16 BSV17 VcEO collector-emitter voltage BSV15 BSV16 BSV17 ICM , V V V V A W W peak collector current total power dissipation DC current gain BSV15-10; BSV16-10; BSV17-10 BSV15-16; BSV16-16 V 63 100 hFE fT transition frequency lc = -50 mA; VCe = , System (IEC 134). SYMBOL VCBO BSV15; BSV16; BSV17 PARAMETER collector-base voltage BSV15 BSV16
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OCR Scan

BSV17-10

Abstract: all ic datasheet TRANSISTORS BSV15 BSV16 BSV17 TO- 39 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BSV15 BSV16 BSV17 , SYMBOL TEST CONDITION BSV15 BSV16 BSV17 ICES VBE=0, VCE=40V , IC=0.1mA, VCE=1V DC Current BSV15-10 BSV16-10 BSV17-10 BSV15-16 BSV16-16 MIN TYP MAX 20 20 20 - - 30 30 - UNIT - IC=100mA, VCE=1V BSV15-10 BSV16-10 BSV17 , 160 100 100 - 250 250 IC=500mA, VCE=1V BSV15-10 BSV16-10 BSV17-10 Cc - BSV15
Continental Device India
Original
all ic datasheet C-120

BSV16-10

Abstract: BSV16-16 SILICON PLANAR EPITAXIAL TRANSISTORS BSV15 BSV16 BSV17 TO- 39 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BSV15 BSV16 BSV17 VCEO 40 60 80 Collector -Emitter Voltage VCES 40 60 90 , Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION BSV15 BSV16 BSV17 ICES VBE=0, VCE=40V , ) DESCRIPTION SYMBOL TEST CONDITION hFE IC=0.1mA, VCE=1V DC Current BSV15-10 BSV16-10 BSV17-10 BSV15 , =1V BSV15-10 BSV16-10 BSV17-10 Emitter Capacitance Ce Transition Frequency ft Small Signal
Continental Device India
Original

BSV16

Abstract: BSV15-10 Datasheet BSV15, -10, -16 BSV16, -10, -16 central BSV17, -10, Semiconductor Corp. PNP , SEMICONDUCTOR BSV15 series types are PNP Silicon Epitaxial Transistors designed for general purpose amplifier and switching applications. MAXIMUM RATINGS (TA=25°C) symbol BSV15 BSV16 BSV17 UNITS , noted) BSV15 BSV16 BSV17 symbol TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS 'CBO , =100mA, lB1=lB2=5.0mA 500 500 500 ns {off lc=100mA, lB1=lB2=5.0mA 650 650 650 ns BSV15-10 BSV16
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OCR Scan
ic lg 631 100MH
Abstract: 1 0.2 0.2 200 200 - 6 5 to +2 0 0 5 5 V V V A A °C °C W Thermal resistance , »23SbOS 00047^5 0 m S I Z G â  25C 0 - 7 9 - , , D - T - .3 7 - /S ' BSV15 SIEMENS , hFE group 6 10 16 h mA /1FE &FE ZlFE Vbe ¡c /h Id h h lh V , cutoff current (-V CE = 6 0 V ; r am = 150°C) b Collector cutoff current (-V C = 80 V) E Collector , I E S .2 5 C .0 4 T 9 6 O f - S I - t S BSV 16 BSV 17 â' SIEMENS AKTIENGESELLSCHAF Dynamic -
OCR Scan
62702-S425 62702-S207 62702-S208 Q62702-S209 62702-S426 62702-S210

a1t 75

Abstract: BSV15 Collector connected to c.-bC (sim. to TO-39) 157 7/76 BSV15 BSVÃ6 THERMAL DATA Hh j-case "^th j-amb , industrial applications. ABSOLUTE MAXIMUM RATINGS BSV15 BSV 16 Vces Collector-emitter voltage (VBE = 0) -40 , DC current gain lc = -0.1 mA VCE = -IV Gr. 6 Gr. 10 Gr. 16 lc = -100 mA VCE = -IV Gr. 6 Gr. 10 Gr. 16 15 44 20 75 30 120 40 63 100 63 100 160 100 160 250 - 158 BSV15 BSV16 DC current gain â'¢ i t. Â
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OCR Scan
a1t 75 A1T -13 TRANSISTOR TRANSISTOR BC 157 35MHI

BSV15

Abstract: BSV16 Collector connected to c.-bC (sim. to TO-39) 157 7/76 BSV15 BSVÃ6 THERMAL DATA Hh j-case "^th j-amb , industrial applications. ABSOLUTE MAXIMUM RATINGS BSV15 BSV 16 Vces Collector-emitter voltage (VBE = 0) -40 , DC current gain lc = -0.1 mA VCE = -IV Gr. 6 Gr. 10 Gr. 16 lc = -100 mA VCE = -IV Gr. 6 Gr. 10 Gr. 16 15 44 20 75 30 120 40 63 100 63 100 160 100 160 250 - 158 BSV15 BSV16 DC current gain â'¢ i t.  , / I * « â'¢ } i i I 2 t I I 4 â'¢ â'¢ > * s â'¢ 160 BSV15 BSV16 ELECTRICAL CHARACTERISTICS
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OCR Scan

AL102 ATES

Abstract: 2N2222A mps BSR51 BSR52 BSR60 BSR61 BSR62 BSS38 BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS68 BSV15 BSV15-6
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OCR Scan
2N2431 AL102 ATES 2N2222A mps AD149 KR206 TIS88 RS276-2001 RS276-2002 RS270-2003 RS276-2004 BS276-200S RS276-2008
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