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Part : BSS295E6325 Supplier : Infineon Technologies Manufacturer : ComSIT Stock : 314 Best Price : - Price Each : -
Part : BSS295E6325 Supplier : Siemens Manufacturer : Chip One Exchange Stock : 189 Best Price : - Price Each : -
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BSS295 Datasheet

Part Manufacturer Description PDF Type
BSS295 Infineon Technologies SIPMOS Small-Signal Transistor Original
BSS295 Siemens Original
BSS295 Siemens SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) Original
BSS295 Toshiba Power MOSFETs Cross Reference Guide Original
BSS295 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BSS295 N/A Shortform Datasheet & Cross References Data Scan
BSS295E6288 Infineon Technologies N-Channel SIPMOS Small-Signal Transistor Original
BSS295E6325 Infineon Technologies N-Channel SIPMOS Small-Signal Transistor Original

BSS295

Catalog Datasheet MFG & Type PDF Document Tags

2N7002LT

Abstract: BSS124 · n- 2149 501 501 501 502 504 504 504 504 504 504 505 505 505 505 523 523 523B 523 max, U max, 0,2 60 0,5 1,0 1,0 1,0 0,7 0,7 0,7 0,7 1,0 1,0 1,0 0,7 240 200 200 400 240 240 200 250 240 240 50 50 60 8 1,0 1,0 0,7 0,7 200 200 200 200 2N7002LT 1 ZVN2120 BSS124 BSS88 BSS295 BSS297 U max, I max, U R I A/B (A) 115 1,0÷2,5 7,5 1,0 1,5 0,08 -46
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Original
BSS-295

BSS295

Abstract: BSS-295 ÇIFMFItK 9 1 E» l w * ï mm BSS295 SIPMOS ® Small-Signal Transistor · N channel · Enhancement mode · Logic Level · ^GS(th)= 0.8.2.0V Pin 1 G Type BSS 295 Type BSS 295 BSS 295 VDS 50 V Pin 2 D Marking SS 295 Pin 3 S 1.4 A ffDS(on) 0.3 a Package TO-92 Ordering Code Q67000-S238 Q67000-S105 Tape and Reel Information E6288 E6325 Maximum Ratings Parameter Drain source , dissipation Drain current fc -W A ) parameter: VqS ^ 10 V BSS295 Safe operating area l&=t{VDS) parameter
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OCR Scan

Q62702-S616

Abstract: Q62702-S483 SIEMENS SIPMOS®Kleinsignaltransistoren Bedrahtete Bauformen Typ Type ^D S(m ax) ^G S (th ) fa (max) SIPMOS® Small-Signal Transistors Leaded types ^ D S {o n )m a x V V mA n P lot mW Bestellnummer Ordering code Gehäuse Package Bild Figure N-Kanal-Anreicherungstypen BSS 98 BSS295 BS 170 SN 7000 BSS 100 BSS 296 BS 107 BSS 297 BSS 88 BSS 89 BSS 101 BSS 124 BSS 125 50 50 60 60 0.8 . . 1.6 0.8 . . 2.0 0.8 . . 2.0 0.8 . . 2.0 300 1400 300 250 3.5 0.3 5 5 N channel
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OCR Scan
Q62702-S464 Q62702-S483 Q62702-S615 Q62702-S616 Q62702-S455 Q62702-S505 BS 240 siemens BSS229 q62702-s484 Q62702-S601 Q62702-S603 Q67000-S061 Q67000-S062

Sot23 SL6

Abstract: BSS315 SOT223 26 BSS295 BSP296 N 100 1000 1500 < 1.00 100
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OCR Scan
BSP17 BSP88 BSP89 BSS89 BSP92 BSS92 Sot23 SL6 BSS315 BSP296N siemens sot223 BSS125 BSS100

BSP87

Abstract: bsp296 l SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type M axim um Ratings Characteristics (T( =25°C Case N = N Channel P = P Channel BS107 BS170 BSS88 BSS89 BSS91 BSS92 BSS98 BSS100 BSSlOl BSSUO BSS124 BSS125 BSS129 BSS135 BSS149 BSS229 BSS295 BSS296 BSS297 SN7000 N N N N N P N N N P N N N* N* N* N* N N N N V 200 60 240 240 240 240 50 100 240 50 400 600 240 600 200 250 50 100 200 60 mA Pt m\Y 1000 630 1000 1000 1500 1000 630 630 630 630 1000
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OCR Scan
BSP87 bsp296 l to92d BSS123 BSS87 BSS138 BSS84 BSP124

BSS87

Abstract: BSP315 SOT223 BSS92 BSS125 BSS129 BSS135 BSS149 BSS295 BSS296 SOT223 SOT223 SOT223 SOT223 130 130 290 170 170
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OCR Scan
BSP171 BSP315 SOT223 BSP129 BSP135 BSP149 BSP295 BSP297

IRF9634

Abstract: MJE13001 BSS295 BSS315 BSS92 BSS131 IRML2402 TN0535 TN0540 BSS297 2N7002LT1 Vgs max, V ±20 ±10
INTEGRAL
Original
KT817A KT817B IRF9634 MJE13001 KT538A KT8296 KT829 kt8290 KT6136A KT6137A KT660A KT660 KT814A KT814

BUZ90af

Abstract: hv82 BSS135 BSS295 BSS89 BSS92 BTS117 BTS117E -3045A BTS121A BTS121AE-3045A BTS141E -3045A BTS149
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Original
BUZ90af hv82 MGF4919G-01 MGF4919G BUZ80AF1 MGF2407A-01 BF1005 BLF244/B SO-20

mosfet cross reference

Abstract: pj 929 diode BSS149 BSS192 BSS229 BSS250 BSS295 TN0620N3 TP2520N8 TN0620N3 VP0106N3 VN2210N3 MFE990
Supertex
Original
mosfet cross reference pj 929 diode pj 1229 diode VN0109N5 pj 66 diode pj 929 T0-92 TN2101 TN2501 TN0602 TN0702 TN0102

Q2N4401

Abstract: D1N3940 BSS138 BSS138 BSS139 BSS145 BSS149 BSS159 BSS169 BSS192 BSS229 BSS284 BSS295 BSS296 BSS297
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Original
Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 RD91EB

YTA630

Abstract: MTW14P20 ÇIFMFItK 9 1 E» l w * ï mm BSS295 SIPMOS ® Small-Signal Transistor · N channel · Enhancement mode · Logic Level · ^GS(th)= 0.8.2.0V Pin 1 G Type BSS 295 Type BSS 295 BSS 295 VDS 50 V Pin 2 D Marking SS 295 Pin 3 S 1.4 A ffDS(on) 0.3 a Package TO-92 Ordering Code Q67000-S238 Q67000-S105 Tape and Reel Information E6288 E6325 Maximum Ratings Parameter Drain source , dissipation Drain current fc -W A ) parameter: VqS ^ 10 V BSS295 Safe operating area l&=t{VDS) parameter
Toshiba
Original
YTA630 MTW14P20 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401

IL311ANM

Abstract: tda8362b SIEMENS SIPMOS®Kleinsignaltransistoren Bedrahtete Bauformen Typ Type ^D S(m ax) ^G S (th ) fa (max) SIPMOS® Small-Signal Transistors Leaded types ^ D S {o n )m a x V V mA n P lot mW Bestellnummer Ordering code Gehäuse Package Bild Figure N-Kanal-Anreicherungstypen BSS 98 BSS295 BS 170 SN 7000 BSS 100 BSS 296 BS 107 BSS 297 BSS 88 BSS 89 BSS 101 BSS 124 BSS 125 50 50 60 60 0.8 . . 1.6 0.8 . . 2.0 0.8 . . 2.0 0.8 . . 2.0 300 1400 300 250 3.5 0.3 5 5 N channel
INTEGRAL
Original
IL311ANM tda8362b ILa1519B1Q iff4n60 IN1307N tda8890

SEMICON INDEXES

Abstract: Ericsson SPO 1410 · n- 2149 501 501 501 502 504 504 504 504 504 504 505 505 505 505 523 523 523B 523 max, U max, 0,2 60 0,5 1,0 1,0 1,0 0,7 0,7 0,7 0,7 1,0 1,0 1,0 0,7 240 200 200 400 240 240 200 250 240 240 50 50 60 8 1,0 1,0 0,7 0,7 200 200 200 200 2N7002LT 1 ZVN2120 BSS124 BSS88 BSS295 BSS297 U max, I max, U R I A/B (A) 115 1,0÷2,5 7,5 1,0 1,5 0,08 -46
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OCR Scan
SEMICON INDEXES Ericsson SPO 1410 tr/NEC Tokin 0d 108 irfp240f LT5202 diode appian adi/2 VV276
Abstract: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type M axim um Ratings Characteristics (T( =25°C Case N = N Channel P = P Channel BS107 BS170 BSS88 BSS89 BSS91 BSS92 BSS98 BSS100 BSSlOl BSSUO BSS124 BSS125 BSS129 BSS135 BSS149 BSS229 BSS295 BSS296 BSS297 SN7000 N N N N N P N N N P N N N* N* N* N* N N N N V 200 60 240 240 240 240 50 100 240 50 400 600 240 600 200 250 50 100 200 60 mA Pt m\Y 1000 630 1000 1000 1500 1000 630 630 630 630 1000 -
OCR Scan
P-T0252-3-1 P-T0263-3-2/D2PAK Q133777 SQT-89

TIC 160 D

Abstract: BSS 130 SOT223 26 BSS295 BSP296 N 100 1000 1500 < 1.00 100
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OCR Scan
TIC 160 D BSS 130 BSP 17 D Q67000-S095 Q67000-S066 SIK001S4

SS295

Abstract: E-6288 BSS92 BSS125 BSS129 BSS135 BSS149 BSS295 BSS296 SOT223 SOT223 SOT223 SOT223 130 130 290 170 170
Infineon Technologies
Original
SS295 E-6288