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Part	Manufacturer	Description	Datasheet	BUY
BSS123W-7-F	Diodes Incorporated	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
BSS123NH6327XTSA1	Infineon Technologies AG	Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
BSS123TA	Diodes Incorporated	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSS123-7-F	Diodes Incorporated	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
BSS123WQ-7-F	Diodes Incorporated	Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
BSS123NH6433XTMA1	Infineon Technologies AG	MOSFET N-CH 100V 0.19A SOT-23

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BSS123 Datasheet

Part	Manufacturer	Description	PDF	Type
BSS123	Diodes	N-CHANNEL ENHANCEMENT MODE MOSFET	Promotions Datasheet 5p. 101.96 Kb	Original
BSS123	Diodes	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	Promotions Datasheet 3p. 65.38 Kb	Original
BSS123	Fairchild Semiconductor	TRANS MOSFET N-CH 100V 0.17A 3SOT-23 T/R	Promotions Datasheet 5p. 140.8 Kb	Original
BSS123	Fairchild Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor	Promotions Datasheet 10p. 281.34 Kb	Original
BSS123	Fairchild Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor	Promotions Datasheet 5p. 70.67 Kb	Original
BSS123	Fairchild Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor	Promotions Datasheet 13p. 510.69 Kb	Original
BSS123	Infineon Technologies	SIPMOS Small-Signal Transistor	Promotions Datasheet 7p. 87.91 Kb	Original
BSS123	Infineon Technologies	N-Channel Small Signal MOSFETs (20V - 800V); Package: PG-SOT23-3; Package: SOT-23; V<sub>DS</sub> (max): 100.0 V; R<sub>DS (on)</sub> (max) (@10V): 6,000.0 mOhm; R<sub>DS (on)</sub> (max) (@4.5V): 10,000.0 mOhm; R<sub>DS (on)</sub> (max) (@2.5V): -;	Promotions Datasheet 8p. 87.92 Kb	Original
BSS123	Philips Semiconductors	N-Channel Logic Level Enhancement Mode Field Effect Transistor	Promotions Datasheet 8p. 47.41 Kb	Original
BSS123	Philips Semiconductors	N-Channel Enhancement Mode Vertical D-MOS Transistor	Promotions Datasheet 4p. 72.49 Kb	Original
BSS123	Siemens	SIPMOS Small-Signal Transistor	Promotions Datasheet 8p. 74.52 Kb	Original
BSS123	Siemens	SIPMOS Small-Signal Transistor	Promotions Datasheet 88p. 1479.06 Kb	Original
BSS123	Siemens		Promotions Datasheet 7p. 1066.96 Kb	Original
BSS123	Siemens	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)	Promotions Datasheet 8p. 131.08 Kb	Original
BSS123	Toshiba	Power MOSFETs Cross Reference Guide	Promotions Datasheet 67p. 161.9 Kb	Original
BSS123	Weitron	Power MOSFET N-Channel	Promotions Datasheet 3p. 87.26 Kb	Original
BSS123	Zetex Semiconductors	SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET	Promotions Datasheet 1p. 44.53 Kb	Original
BSS123	Calogic	N-Channel Enhancement Mode Vertical DMOS FET	Promotions Datasheet 2p. 77.97 Kb	Scan
BSS123	Motorola	Switchmode Datasheet	Promotions Datasheet 1p. 31.51 Kb	Scan
BSS123	N/A	Semiconductor Master Cross Reference Guide	Promotions Datasheet 1p. 119.47 Kb	Scan

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BSS123

Catalog Datasheet	MFG & Type	PDF	Document Tags
BSS123 Abstract: F A IR C H IL D SEM IC ONDUCTO R tm September 1996 BSS100 / BSS123 N-Channel Logic Level , . Features BSS100: 0.22A, 100V. RD S (0N ) = 6£2 @ VGS= 10V. BSS123: 0.17A, 100V. Rds(on) = 6£2 @ VGS= 10V , Continuous - Non Repetitive (Tp < 50 |aS) BSS100 100 100 ±14 ±20 0.22 0.9 0.63 -55 to 150 300 BSS123 , 20 V, VG S= 0 V Tj=125°C All BSS100 BSS123 100 15 1 60 10 10 10 50 V mA mA mA All BSS100 BSS123 BSS100 BSS123 nA nA nA nA IgS S F Gate - Body Leakage, Forward VG S= 20 V, VD S	- OCR Scan	Promotions Datasheet 5p. 159.3 Kb
BSS123 Abstract: SAs SOT23 BSS123 Rev. 1.4 SIPMOS Small-Signal-Transistor Feature Product Summary · N-Channel , Package Pb-free Tape and Reel Information Marking BSS123 PG-SOT23 Yes L6327: 3000 pcs/reel SAs BSS123 PG-SOT23 Yes L6433: 10000 pcs/reel SAs Maximum Ratings, at Tj = 25 , IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2006-12-01 BSS123 Rev. 1.4 , =4.5V, ID=0.13A Drain-source on-state resistance VGS=10V, ID=0.17A Page 2 2006-12-01 BSS123	Infineon Technologies Original	Promotions Datasheet 8p. 87.92 Kb	SAs SOT23 transistor bss123 BSS123(A) equivalent MARKING QG 6 PIN VPS05161
BSS123 Abstract: BSS100 PAIRCHILD MICDNDUCTDR i September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement , . Features â  BSS100: 0.22A, 100V. RDS(0N) = 6i2 @ VGS= 10V. BSS123: 0.17A, 100V. Rds(on) = 6i2 @ VGS= 10V , . â  Rugged and reliable. V» TO-92 (97) BSS100 G o SOT-23 BSS123 Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter BSS100 BSS123 Units vâ'ž Drain-Source Voltage 100 , BSS100 Rev. F / BSS123 Rev. F This Material Copyrighted By Its Respective Manufacturer Electrical	- OCR Scan	Promotions Datasheet 5p. 158.88 Kb	transistor BJ 017 BSS100 TO92 bss100 transistor BS8123 bss123 transistor BSS10
BSS100 Abstract: transistor P1 P September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor , , 100V. RDS(ON) = 6 @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6 @ VGS = 10V High density cell design , . D G BSS100 BSS123 Absolute Maximum Ratings Symbol S TA = 25°C unless otherwise noted Parameter BSS100 BSS123 Units VDSS Drain-Source Voltage 100 V VDGR , , Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 200 350 °C/W BSS100 Rev. F1 / BSS123 Rev	Fairchild Semiconductor Original	Promotions Datasheet 10p. 280.6 Kb	transistor P1 P bSS100 TRANSISTOR DATASHEET F1 SOT23 BSS100 TO-92 BSS100 equivalent
BSS123 Abstract: BSS100 tu National Semiconductor" July 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode , . Features â  BSS100: 0.22A, 100V. RDS(ON) = 6Q @ VGS = 10V. BSS123: 0.17 A, 100V. RDS(ON) = 6ii @ VGS = , switch. â  Rugged and reliable. TO-97 BSS100 SOT-23 BSS123 Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter BSSIOO BSS123 Units VDSS Drain-Source Voltage 100 V ^DGR , Current Vcs = 100 V, VGS = 0 V BSS100 15 MA vDS = ioov,vGS=ov BSS123 1 mA VDS = 100V,VGS=0V Tj	- OCR Scan	Promotions Datasheet 5p. 184.29 Kb	85S100 K5011 LSD1130 004D1 S0113D GG401
BSS123 Abstract: BSS123 L6433 BSS123 Rev. 1.41 SIPMOS Small-Signal-Transistor Feature Product Summary · N-Channel , BSS123 PG-SOT23 Yes L6327: 3000 pcs/reel SAs BSS123 PG-SOT23 Yes L6433: 10000 pcs , 2010-05-12 BSS123 Rev. 1.41 Thermal Characteristics Parameter Symbol Values Unit min , =0.17A Page 2 2010-05-12 BSS123 Rev. 1.41 Electrical Characteristics, at Tj = 25 °C, unless , 2010-05-12 BSS123 Rev. 1.41 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA	Infineon Technologies Original	Promotions Datasheet 8p. 119.54 Kb	BSS123 L6433 PG-SOT-23
bss123 Abstract: BSS123 Rev. 1.3 SIPMOS Small-Signal-Transistor Feature Product Summary â , VPS05161 Type Package Ordering Code Tape and Reel Information Marking BSS123 PG-SOT23 Q62702-S512 L6327: 3000 pcs/reel SAs BSS123 PG-SOT23 Q67000-S245 SAs BSS123 PG-SOT23 , category; DIN IEC 68-1 55/150/56 Page 1 2006-11-02 BSS123 Rev. 1.3 Thermal Characteristics , =4.5V, ID=0.13A Drain-source on-state resistance VGS=10V, ID=0.17A Page 2 2006-11-02 BSS123	Infineon Technologies Original	Promotions Datasheet 8p. 89.37 Kb	SP000084574
Abstract: Rev. 1.1 BSS123 SIPMOS Small-Signal-Transistor Feature · N-Channel · Enhancement mode · , Drain pin 3 Gate pin1 Source pin 2 2 1 VPS05161 Type BSS123 BSS123 Package PG-SOT23 , Characteristics Drain-source breakdown voltage VGS=0, ID =250µA BSS123 Symbol min. RthJA - Values typ , *RDS(on)max, ID=0.14A VGS=0, VDS=25V, f=1MHz BSS123 Symbol Conditions min. 0.09 - Values , Power dissipation Ptot = f (TA) 0.38 BSS123 BSS123 2 Drain current ID = f (TA) parameter: VGS 10	Infineon Technologies Original	Promotions Datasheet 8p. 86.24 Kb	E6327 E6433
SAs SOT23 Abstract: BSS123 BSS123 Rev. 1.0 SIPMOS Small-Signal-Transistor Feature Product Summary · N-Channel , Package Ordering Code Tape and Reel Information Marking BSS123 SOT23 Q62702-S512 E6327: 3000 pcs/reel SAs BSS123 SOT23 Q67000-S245 E6433: 10000 pcs/reel SAs Maximum , T j , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2002-12-10 BSS123 , 2002-12-10 BSS123 Rev. 1.0 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified	Infineon Technologies Original	Promotions Datasheet 8p. 74.52 Kb	bss123 infineon sot23 sas sot23-3
BSS123 Abstract: BSS100 equivalent September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features BSS100: 0.22A, 100V. RDS(ON) = 6 @ VGS = 10V. BSS123: 0.17A, 100V. RDS , . D G BSS100 BSS123 Absolute Maximum Ratings S T A = 25°C unless otherwise noted , ) ± 20 ID BSS100 Drain Current - Continuous - Pulsed BSS123 0.22 0.17 0.9 , , Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 200 350 °C/W BSS100 Rev. F / BSS123 Rev	Fairchild Semiconductor Original	Promotions Datasheet 5p. 70.67 Kb
Abstract: Equivalent Circuit Ordering Information (Note 3) Part Number BSS123-7-F BSS123Q-13 BSS123Q-7 Notes , BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON , Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D BSS123 , www.diodes.com March 2012 © Diodes Incorporated BSS123 Maximum Ratings @TA = 25°C unless otherwise , minimize self-heating effect. BSS123 Document number: DS30366 Rev. 16 - 2 2 of 5 www.diodes.com	Diodes Original	Promotions Datasheet 5p. 98 Kb	J-STD-020 MIL-STD-202
Abstract: BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description , Reel Size Tape width Quantity SA BSS123 7â'™â'™ 8mm 3000 units ©2003 Fairchild Semiconductor Corporation BSS123 Rev G(W) BSS123 June 2003 Symbol Parameter TA = 25° unless , , Duty Cycle ≤ 2.0% BSS123 Rev G(W) BSS123 Electrical Characteristics BSS123 Typical , ) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. BSS123 Rev G(W	Fairchild Semiconductor Original	Promotions Datasheet 5p. 150.19 Kb
transistor 45 f 123 Abstract: c m p r M - iii n SEMICONDUCTOR September 1996 tm BSS100 / BSS123 N-Channel , drivers, and other switching applications. â  BSS100: 0.22A, 100V. RD (0 ) = 6 0 @ VG 10V. BSS123: SN , Continuous - Pulsed PD Total Power Dissipation @ Tfl = 25 °C BSS123 0.22 0.17 0.9 , 997 Fairchild Semiconductor Corporation 200 350 °C/W BSS100 Rev. F / BSS123 Rev. F , %. BSS100 Rev. F / BSS123 Rev. F Typical Electrical Characteristics V , D R A IN -S O U R C E V O	- OCR Scan	Promotions Datasheet 5p. 136.11 Kb	transistor 45 f 123
SOT23 K23 Abstract: Ordering Information Device BSS123-7 Notes: (Note 3) Packaging SOT-23 Shipping 3000/Tape & Reel 3 , BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: BSS123 NEW PRODUCT , specified Symbol VDSS VDGR Continuous Continuous Pulsed VGSS ID IDM Pd RqJA Tj, TSTG BSS123 100 100 ±20 170 , . DS30366 Rev. 3 - 2 1 of 3 www.diodes.com BSS123 ã Diodes Incorporated NEW PRODUCT , 2 2 of 3 www.diodes.com BSS123 VGS(th), NORMALIZED THRESHOLD VOLTAGE 1.2 2.2 RDS(ON	Diodes Original	Promotions Datasheet 3p. 68.46 Kb	SOT23 K23 J-STD-020A 3000/T
BSS123 Abstract: BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description , SA BSS123 7'' 8mm 3000 units ©2003 Fairchild Semiconductor Corporation BSS123 Rev G(W) BSS123 June 2003 Symbol Parameter TA = 25°C unless otherwise noted Test , Width 300 µs, Duty Cycle 2.0% BSS123 Rev G(W) BSS123 Electrical Characteristics BSS123 , . Body Diode Forward Voltage Variation with Source Current and Temperature. BSS123 Rev G(W	Fairchild Semiconductor Original	Promotions Datasheet 5p. 140.81 Kb
BSS123Q-13 Abstract: DS30366 Number BSS123-7-F BSS123Q-13 BSS123Q-7 Notes: Qualification Commercial Automotive Automotive Case , BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) 6.0 @ VGS = 10V , 2008 V Mar 3 2009 W Apr 4 YM BSS123 Document number: DS30366 Rev. 16 - 2 1 of 5 www.diodes.com March 2012 © Diodes Incorporated BSS123 Maximum Ratings @TA = 25°C unless otherwise , . BSS123 Document number: DS30366 Rev. 16 - 2 2 of 5 www.diodes.com March 2012 © Diodes	Diodes Original	Promotions Datasheet 5p. 108.67 Kb	bss123 c23 K23 mOSFET K23 SOT23
SP000084574 Abstract: PG-SOT-23 BSS123 Rev. 1.2 SIPMOS Small-Signal-Transistor Feature Product Summary · N-Channel , Package Ordering Code Tape and Reel Information Marking BSS123 PG-SOT23 Q62702-S512 E6327: 3000 pcs/reel SAs BSS123 PG-SOT23 Q67000-S245 SAs BSS123 PG-SOT23 , ; DIN IEC 68-1 55/150/56 Page 1 2005-07-21 BSS123 Rev. 1.2 Thermal Characteristics , =0.13A Drain-source on-state resistance VGS=10V, ID=0.17A Page 2 2005-07-21 BSS123 Rev. 1.2 Electrical	Infineon Technologies Original	Promotions Datasheet 8p. 88.71 Kb	bss123 infineon DIODE MARKING CODE G SOT23 bss123 marking marking code 10 sot23 bss123 sas
BSS100 Abstract: BSS100 TO-92 September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor , , 100V. RDS(ON) = 6 @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6 @ VGS = 10V High density cell design , . D G BSS100 BSS123 Absolute Maximum Ratings Symbol S TA = 25°C unless otherwise noted Parameter BSS100 BSS123 Units VDSS Drain-Source Voltage 100 V VDGR , , Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 200 350 °C/W BSS100 Rev. F1 / BSS123 Rev	Fairchild Semiconductor Original	Promotions Datasheet 13p. 510.68 Kb	CBVK741B019 F63TNR PN2222N
Abstract: Information (Note 4) Part Number BSS123-7-F BSS123Q-13 BSS123Q-7 Notes: Qualification Commercial , BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON , May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D BSS123 Document number: DS30366 Rev. 17 - 2 1 of 5 www.diodes.com July 2013 © Diodes Incorporated BSS123 , minimize self-heating effect. BSS123 Document number: DS30366 Rev. 17 - 2 2 of 5 www.diodes.com	Diodes Original	Promotions Datasheet 5p. 99.86 Kb	AEC-Q101
Abstract: ) Part Number BSS123-7-F BSS123Q-13 BSS123Q-7 Notes: Qualification Commercial Automotive , BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON , Aug 8 Sep 9 Oct O Nov N Dec D BSS123 Document number: DS30366 Rev. 18 - 2 1 of 5 www.diodes.com August 2013 © Diodes Incorporated BSS123 Maximum Ratings (@TA = +25°C , self-heating effect. BSS123 Document number: DS30366 Rev. 18 - 2 2 of 5 www.diodes.com August 2013	Diodes Original	Promotions Datasheet 5p. 101.96 Kb
SAs SOT-23 marking Abstract: SAS SOT23 F A IR C H IL D SEM IC ONDUCTO R tm September 1996 BSS100 / BSS123 N-Channel Logic Level , . Features BSS100: 0.22A, 100V. RD S (0N ) = 6£2 @ VGS= 10V. BSS123: 0.17A, 100V. Rds(on) = 6£2 @ VGS= 10V , Continuous - Non Repetitive (Tp < 50 |aS) BSS100 100 100 ±14 ±20 0.22 0.9 0.63 -55 to 150 300 BSS123 , 20 V, VG S= 0 V Tj=125°C All BSS100 BSS123 100 15 1 60 10 10 10 50 V mA mA mA All BSS100 BSS123 BSS100 BSS123 nA nA nA nA IgS S F Gate - Body Leakage, Forward VG S= 20 V, VD S	- OCR Scan	Promotions Datasheet 7p. 170.61 Kb	SAs SOT-23 marking marking BSs sot23 MARKING code VG SOT-23 marking AFE
SAs SOT-23 marking Abstract: marking BSs PAIRCHILD MICDNDUCTDR i September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement , . Features â  BSS100: 0.22A, 100V. RDS(0N) = 6i2 @ VGS= 10V. BSS123: 0.17A, 100V. Rds(on) = 6i2 @ VGS= 10V , . â  Rugged and reliable. V» TO-92 (97) BSS100 G o SOT-23 BSS123 Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter BSS100 BSS123 Units vâ'ž Drain-Source Voltage 100 , BSS100 Rev. F / BSS123 Rev. F This Material Copyrighted By Its Respective Manufacturer Electrical	Siemens Original	Promotions Datasheet 8p. 131.07 Kb	marking BSs marking "BSs" bss 108 BSS 123 marking SAs SOT23

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