500 MILLION PARTS FROM 12000 MANUFACTURERS
500 MILLION PARTS FROM 12000 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| BSS123W | Fairchild Semiconductor Corporation | N-Channel Logic Level Enhancement Mode Field Effect Transistor, 3LD, SC70, EIAJ SC-70, 1.25MM WIDE, 3000/TAPE REEL | 
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| BSS123_NL | Fairchild Semiconductor Corporation | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN |
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| BSS123L | Fairchild Semiconductor Corporation | N-Channel Logic Level Enhancement Mode Field Effect Transistor, 3LD, SOT23, JEDEC TO-236, LOW PROFILE, 3000/TAPE REEL |
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| Part | Manufacturer | Description | Last Check | Distributor | Ordering |
| BSS123 | - | - | 6,334 (Sep 2016) | Chip One Exchange | |
| BSS123 | - | MOSFET Transistor, N-Channel, TO-236AB | 838 from $0.04 (Sep 2016) | Quest Components | |
| BSS123 | Diodes | MOSFET Transistor, N-Channel, TO-236AB | 980 from $0.04 (Sep 2016) | Quest Components | |
| BSS123 | Fairchild Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | 432 from $0.0359 (Sep 2016) | Arrow Electronics | |
| BSS123 | Fairchild Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R (Alt: BSS123) | 420,000 from €0.0154 (Sep 2016) | Avnet | |
| BSS123 | Fairchild Semiconductor | - | 5,784 from $0.0090 (Sep 2016) | Bristol Electronics | |
| BSS123 | Fairchild Semiconductor | - | 7,801 (Sep 2016) | Chip One Exchange | |
| BSS123 | Fairchild Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | 882,000 from $0.0289 (Sep 2016) | Chip1Stop | |
| BSS123 | Fairchild Semiconductor | MOSFET Fairchild Semiconductor BSS123 1 N-Kanal 360 mW SOT-23-3 | 30 from €0.24 (Sep 2016) | Conrad Electronic | |
| BSS123 | Fairchild Semiconductor | MOSFET N-CH 100V 170MA SOT-23 | 69,575 from $0.0476 (Sep 2016) | Digi-Key | |
| BSS123 | Fairchild Semiconductor | N CHANNEL MOSFET, 100V, 170mA, SOT-23, F | 60,273 from $0.03 (Sep 2016) | element14 Asia-Pacific | |
| BSS123 | Fairchild Semiconductor | MOSFET, N-CH, 100V, 170MA, SOT-23, RL | 106,906 from £0.0240 (Sep 2016) | Farnell element14 | |
| BSS123 | Fairchild Semiconductor | N-Channel 100 V 6 Ohm Logic Level Enhancement Mode FET - SOT-23-3 | 5,046,000 from $0.0260 (Sep 2016) | Future Electronics | |
| BSS123 | Fairchild Semiconductor | MOSFET SOT-23 N-CH LOGIC | 101,837 from $0.0230 (Oct 2016) | Mouser Electronics | |
| BSS123 | Fairchild Semiconductor | N CHANNEL MOSFET, 100V, 170mA, SOT-23, FULL REEL; Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V;RoHS Compliant: Yes | 53,900 from $0.0470 (Sep 2016) | Newark element14 | |
| BSS123 | Fairchild Semiconductor | MOSFET Transistor, N-Channel, TO-236AB | 26,151 from $0.03 (Sep 2016) | Quest Components | |
| BSS123 | Fairchild Semiconductor | MOSFET N-Channel 100V 0.17A SOT23 | 16,400 (Oct 2016) | RS Components | |
| BSS123 | Fairchild Semiconductor | Transistor: N-MOSFET; unipolar; logic level; 100V; 150mA; 250mW | 62,269 from $0.0214 (Sep 2016) | TME Electronic Components | |
| BSS123 | Fairchild Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | 240,000 from $0.0265 (Sep 2016) | Verical | |
| BSS123 | Freescale Semiconductor | MOSFET Transistor, N-Channel, TO-236AB | 104 from $0.10 (Sep 2016) | Quest Components | |
| Part | Manufacturer | Description | Type | Ordering |
| BSS123 | N/A | Shortform Datasheet & Cross References Data |
1 pages, |
Scan | |
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| BSS123 | Motorola | Switchmode Datasheet |
1 pages, |
Scan | |
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| BSS123LT1 | N/A | Shortform Datasheet & Cross References Data |
1 pages, |
Scan | |
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| BSS123LT1 | On Semiconductor | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, TMOS FET, N Channel, 100mA, 100V, Pkg Style SOT23 |
1 pages, |
Scan | |
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| BSS123T/R | N/A | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
1 pages, |
Scan | |
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| BSS123 | N/A | Semiconductor Master Cross Reference Guide |
1 pages, |
Scan | |
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| BSS123 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan | |
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| BSS123 | N/A | FET Data Book |
1 pages, |
Scan | |
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| BSS123 | Calogic | N-Channel Enhancement Mode Vertical DMOS FET |
2 pages, |
Scan | |
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| BSS123 | Diodes | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
3 pages, |
Original | |
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| Catalog Datasheet | MFG & Type | Document Tags |
| Abstract: F A IR C H IL D SEM IC ONDUCTO R tm September 1996 BSS100 BSS100 / BSS123 N-Channel Logic Level , . Features BSS100 BSS100: 0.22A, 100V. RD S (0N ) = 6£2 @ VGS= 10V. BSS123: 0.17A, 100V. Rds(on) = 6£2 @ VGS= 10V , Continuous - Non Repetitive (Tp < 50 |aS) BSS100 BSS100 100 100 ±14 ±20 0.22 0.9 0.63 -55 to 150 300 BSS123 , 20 V, VG S= 0 V Tj=125°C All BSS100 BSS100 BSS123 100 15 1 60 10 10 10 50 V mA mA mA All BSS100 BSS100 BSS123 BSS100 BSS100 BSS123 nA nA nA nA IgS S F Gate - Body Leakage, Forward VG S= 20 V, VD S ... | OCR Scan |
5 pages, |
BSS123 TEXT |
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| Abstract: BSS123 Rev. 1.4 SIPMOS Small-Signal-Transistor Feature Product Summary · N-Channel , Package Pb-free Tape and Reel Information Marking BSS123 PG-SOT23 PG-SOT23 Yes L6327 L6327: 3000 pcs/reel SAs BSS123 PG-SOT23 PG-SOT23 Yes L6433 L6433: 10000 pcs/reel SAs Maximum Ratings, at Tj = 25 , IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2006-12-01 BSS123 Rev. 1.4 , =4.5V, ID=0.13A Drain-source on-state resistance VGS=10V, ID=0.17A Page 2 2006-12-01 BSS123 ... | Infineon Technologies Original |
8 pages, |
PG-SOT23 MARKING QG 6 PIN L6327 BSS123(A) equivalent transistor bss123 SAs SOT23 BSS123 TEXT |
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| Abstract: PAIRCHILD MICDNDUCTDR i September 1996 BSS100 BSS100 / BSS123 N-Channel Logic Level Enhancement , . Features â BSS100 BSS100: 0.22A, 100V. RDS(0N) = 6i2 @ VGS= 10V. BSS123: 0.17A, 100V. Rds(on) = 6i2 @ VGS= 10V , . â Rugged and reliable. V» TO-92 (97) BSS100 BSS100 G o SOT-23 BSS123 Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter BSS100 BSS100 BSS123 Units vâ Drain-Source Voltage 100 , BSS100 BSS100 Rev. F / BSS123 Rev. F This Material Copyrighted By Its Respective Manufacturer Electrical ... | OCR Scan |
5 pages, |
bss123 transistor BSS100 TO-92 BSS10 BS8123 bss100 transistor BSS100 TO92 transistor BJ 017 BSS100 BSS123 TEXT |
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| Abstract: September 1996 BSS100 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor , , 100V. RDS(ON) = 6 @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6 @ VGS = 10V High density cell design , . D G BSS100 BSS100 BSS123 Absolute Maximum Ratings Symbol S TA = 25°C unless otherwise noted Parameter BSS100 BSS100 BSS123 Units VDSS Drain-Source Voltage 100 V VDGR , , Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 200 350 °C/W BSS100 BSS100 Rev. F1 / BSS123 Rev ... | Fairchild Semiconductor Original |
10 pages, |
transistor bss123 BSS123 BSS100 equivalent F1 SOT23 bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 transistor P1 P BSS100 TEXT |
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| Abstract: tu National Semiconductor" July 1996 BSS100 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode , . Features â BSS100 BSS100: 0.22A, 100V. RDS(ON) = 6Q @ VGS = 10V. BSS123: 0.17 A, 100V. RDS(ON) = 6ii @ VGS = , switch. â Rugged and reliable. TO-97 BSS100 BSS100 SOT-23 BSS123 Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter BSSIOO BSS123 Units VDSS Drain-Source Voltage 100 V ^DGR , Current Vcs = 100 V, VGS = 0 V BSS100 BSS100 15 MA vDS = ioov,vGS=ov BSS123 1 mA VDS = 100V,VGS=0V Tj ... | OCR Scan |
5 pages, |
TRANSISTOR BSS123 85S100 BSS100 BSS123 TEXT |
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| Abstract: BSS123 Rev. 1.41 SIPMOS Small-Signal-Transistor Feature Product Summary · N-Channel , BSS123 PG-SOT23 PG-SOT23 Yes L6327 L6327: 3000 pcs/reel SAs BSS123 PG-SOT23 PG-SOT23 Yes L6433 L6433: 10000 pcs , 2010-05-12 BSS123 Rev. 1.41 Thermal Characteristics Parameter Symbol Values Unit min , =0.17A Page 2 2010-05-12 BSS123 Rev. 1.41 Electrical Characteristics, at Tj = 25 °C, unless , 2010-05-12 BSS123 Rev. 1.41 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA ... | Infineon Technologies Original |
8 pages, |
PG-SOT23 PG-SOT-23 L6327 SAs sot23 BSS123 L6433 BSS123 TEXT |
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| Abstract: BSS123 Rev. 1.3 SIPMOSï Small-Signal-Transistor Feature Product Summary â , VPS05161 VPS05161 Type Package Ordering Code Tape and Reel Information Marking BSS123 PG-SOT23 PG-SOT23 Q62702-S512 Q62702-S512 L6327 L6327: 3000 pcs/reel SAs BSS123 PG-SOT23 PG-SOT23 Q67000-S245 Q67000-S245 SAs BSS123 PG-SOT23 PG-SOT23 , category; DIN IEC 68-1 55/150/56 Page 1 2006-11-02 BSS123 Rev. 1.3 Thermal Characteristics , =4.5V, ID=0.13A Drain-source on-state resistance VGS=10V, ID=0.17A Page 2 2006-11-02 BSS123 ... | Infineon Technologies Original |
8 pages, |
BSS123 TEXT |
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| Abstract: Rev. 1.1 BSS123 SIPMOS Small-Signal-Transistor Feature · N-Channel · Enhancement mode · , Drain pin 3 Gate pin1 Source pin 2 2 1 VPS05161 VPS05161 Type BSS123 BSS123 Package PG-SOT23 PG-SOT23 , Characteristics Drain-source breakdown voltage VGS=0, ID =250uA BSS123 Symbol min. RthJA - Values typ , *RDS(on)max, ID=0.14A VGS=0, VDS=25V, f=1MHz BSS123 Symbol Conditions min. 0.09 - Values , Power dissipation Ptot = f (TA) 0.38 BSS123 BSS123 2 Drain current ID = f (TA) parameter: VGS 10 ... | Infineon Technologies Original |
8 pages, |
BSS123 TEXT |
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| Abstract: BSS123 Rev. 1.0 SIPMOS Small-Signal-Transistor Feature Product Summary · N-Channel , Package Ordering Code Tape and Reel Information Marking BSS123 SOT23 Q62702-S512 Q62702-S512 E6327 E6327: 3000 pcs/reel SAs BSS123 SOT23 Q67000-S245 Q67000-S245 E6433 E6433: 10000 pcs/reel SAs Maximum , T j , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2002-12-10 BSS123 , 2002-12-10 BSS123 Rev. 1.0 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified ... | Infineon Technologies Original |
8 pages, |
sas sot23-3 Q67000-S245 Q62702-S512 E6327 bss123 infineon sot23 BSS123 SAs SOT23 TEXT |
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| Abstract: September 1996 BSS100 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features BSS100 BSS100: 0.22A, 100V. RDS(ON) = 6 @ VGS = 10V. BSS123: 0.17A, 100V. RDS , . D G BSS100 BSS100 BSS123 Absolute Maximum Ratings S T A = 25°C unless otherwise noted , ) ± 20 ID BSS100 BSS100 Drain Current - Continuous - Pulsed BSS123 0.22 0.17 0.9 , , Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 200 350 °C/W BSS100 BSS100 Rev. F / BSS123 Rev ... | Fairchild Semiconductor Original |
5 pages, |
bss100 transistor BSS100 BSS100 equivalent BSS123 TEXT |
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| Abstract: F A IR C H IL D SEM IC ONDUCTO R tm September 1996 BSS100 BSS100 / BSS123 N-Channel Logic Level , . Features BSS100 BSS100: 0.22A, 100V. RD S (0N ) = 6£2 @ VGS= 10V. BSS123: 0.17A, 100V. Rds(on) = 6£2 @ VGS= 10V , Continuous - Non Repetitive (Tp < 50 |aS) BSS100 BSS100 100 100 ±14 ±20 0.22 0.9 0.63 -55 to 150 300 BSS123 , 20 V, VG S= 0 V Tj=125°C All BSS100 BSS100 BSS123 100 15 1 60 10 10 10 50 V mA mA mA All BSS100 BSS100 BSS123 BSS100 BSS100 BSS123 nA nA nA nA IgS S F Gate - Body Leakage, Forward VG S= 20 V, VD S ... | OCR Scan |
7 pages, |
SOT-23 marking AFE MARKING code VG marking BSs sot23 SAS SOT23 SAs SOT-23 marking TEXT |
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| Abstract: PAIRCHILD MICDNDUCTDR i September 1996 BSS100 BSS100 / BSS123 N-Channel Logic Level Enhancement , . Features â BSS100 BSS100: 0.22A, 100V. RDS(0N) = 6i2 @ VGS= 10V. BSS123: 0.17A, 100V. Rds(on) = 6i2 @ VGS= 10V , . â Rugged and reliable. V» TO-92 (97) BSS100 BSS100 G o SOT-23 BSS123 Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter BSS100 BSS100 BSS123 Units vâ Drain-Source Voltage 100 , BSS100 BSS100 Rev. F / BSS123 Rev. F This Material Copyrighted By Its Respective Manufacturer Electrical ... | Siemens Original |
8 pages, |
bss 108 BSS 123 E6327 marking SAs SOT23 Q62702-S512 Q67000-S245 marking "BSs" transistor 45 f 123 SAS SOT23 marking BSs SAs SOT-23 marking TEXT |
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| Abstract: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON , Equivalent Circuit Ordering Information (Note 3) Part Number BSS123-7-F BSS123Q-13 BSS123Q-13 BSS123Q-7 BSS123Q-7 Notes , Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D BSS123 , www.diodes.com March 2012 © Diodes Incorporated BSS123 Maximum Ratings @TA = 25°C unless otherwise , minimize self-heating effect. BSS123 Document number: DS30366 DS30366 Rev. 16 - 2 2 of 5 www.diodes.com ... | OCR Scan |
5 pages, |
TEXT |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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BSS123_3 Product information page BSS123 ringer The BSS123 is supplied in the SOT23 subminiature surface mounting package. Features Datsheet status Page count File size BSS123 N-channel TrenchMOS (tm) transistor Logic Level FET Status Chemical Content BSS123 BSS123 T/R 9339 463 40215 week 35, 2003 Standard Spice model of BSS123 High performance MOSFET's for DC-DC conversion (2001-11-01
/datasheets/files/philips/pip/bss123_3-v1.html |
Philips | 15/06/2005 | 4.93 Kb | HTML | bss123_3-v1.html |
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BSS123_3 Product information page BSS123; N-channel High-speed line driver Telephone ringer The BSS123 is supplied in the SOT23 subminiature BSS123 N-channel TrenchMOS(TM) transistor Logic Level FET 01-okt-02 Product Specification 4 ) Marking/Packing Specific Package Device Status BSS123 BSS123 T/R 9339 463 40215 Standard Marking * Reel Pack, SMD, Low Profile SOT23 RFS Support Spice model of BSS123
/datasheets/files/philips/pip/bss123_3.html |
Philips | 23/04/2003 | 3.36 Kb | HTML | bss123_3.html |
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Models BSS123/3 model(s) BSS123 BSS123 Simulation values .SUBCKT BSS123 1 2 3 * 1=drain 2=gate 3=source Cgs 2 3 18.8E-12 8E-12 Cgd1 2 4 57.7E-12 7E-12 Cgd2 1 4 4E-12 4E-12 M1 1 2 3 3 MOST1 M2 4 2 1 3 MOST2 D1 3 1 Dbody .MODEL MOST1 NMOS(Level=3 Kp=20.79u W=7.9m L=2u Rs=20m Vto=1.6 Rd=1.515) .MODEL MOST2 NMOS(VTO=-4.64 Kp=20.79u W=7.9m L=2u Rs=20m) .MODEL Dbody D(Is=192.2f N=1.052 Rs=318.2m Cjo=72.35p M=422.8m Vj=494.8m + Bv=100
/datasheets/files/philips/models/bss123_3.html |
Philips | 23/04/2003 | 1.78 Kb | HTML | bss123_3.html |
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Chemical content for BSS123 Chemical content for BSS123 Typenumber Philips package type Philips package type description Moisture Sensitivity Level Total product weight BSS123 SOT23 SST3 1 08.0 mg Subpart Material group Substances CAS number Mass(mg) Mass(%) Active device Other Si 00.10 01.25 Bond wire Other Au 00.06 00.75 Leadframe Other Co 00.01 00.16 Fe
/datasheets/files/philips/chemical_content/bss123.html |
Philips | 14/06/2005 | 5.58 Kb | HTML | bss123.html |
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BSS123 ELECTRICAL MODEL (SOT-23 Single N-Ch DMOS) *- .SUBCKT BSS123 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.00184*TEMP+1.046}} KP={-0.0012*TEMP+0.6} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 50p Rd 20 4 1.3 TC=0.00864 Dds 3 4 DDS .MODEL DDS INTER E3 9 1 4 1 -2 .ENDS BSS123 *
/datasheets/files/spicemodels/misc/spice_model_cd/vendor list/fairchild/bs/bss123.lib |
Spice Models | 29/07/2012 | 0.92 Kb | LIB | bss123.lib |
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BSS123_CNV_2 BSS123 N-channel enhancement mode vertical D-MOS transistor @ max. (V) Configuration BSS123 0.15 0.15 75 - 300 V N-channel MOSFETs 100 Order Code (12nc) Marking/Packing Specific Package Device Status BSS123 BSS123 T/R 9339 Spice model of BSS123 BSS123 N-channel
/datasheets/files/philips/pip/bss123_cnv_2.html |
Philips | 14/02/2002 | 7.08 Kb | HTML | bss123_cnv_2.html |
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*BSS123 at Temp. Electrical *- .SUBCKT BSS123 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS NMOS(VTO=1.5 KP=1.15 +THETA=0.94118 VMAX=2E5 LEVEL=3) Cgs 1 5x VBLK VB2 0 100 D 20 DB1 DBLK .MODEL DBLK D(IS=1E-14 1E-14 CJO=.1p RS=.1) EDB DB1 0 VB1 0 1 .ENDS BSS123 *BSS123 (Rev.A1) 5/15/02 *ST
/datasheets/files/fairchild/pdfs/models actual/bss123.mod |
Fairchild | 22/08/2003 | 1.11 Kb | MOD | bss123.mod |
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Models BSS123/3 model(s) BSS123 BSS123 Simulation values .SUBCKT BSS123 1 2 3 * 1=drain 2=gate 3=source Cgs 2 3 18.8E-12 8E-12 Cgd1 2 4 57.7E-12 7E-12 Cgd2 1 4 4E-12 4E-12 M1 1 2 3 3 MOST1 M2 4 2 1 3 MOST2 D1 3 1 Dbody .MODEL MOST1 NMOS(Level=3 Kp=20.79u W=7.9m L=2u Rs=20m Vto=1.6 Rd=1.515) .MODEL MOST2 NMOS(VTO=-4.64 Kp=20.79u W=7.9m L=2u Rs=20m) .MODEL Dbody D(Is=192.2f N=1.052 Rs=318.2m Cjo=72.35p M=422.8m Vj=494.8m + Bv=100
/datasheets/files/philips/models/bss123_3-v1.html |
Philips | 12/05/2005 | 1.82 Kb | HTML | bss123_3-v1.html |
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.SUBCKT BSS123 20 10 30 *FC SUBCKT BSS123, 3 *Node 1,Drain *Node 2,Gate *Node 3,Source * Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO=1.3 KP=0.57 THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 50p Rd 20 4 1.3 * TC=0.00864 Dds 3 4 DDS .MODEL DDS D(BV=100 M=0.36 CJO=23p VJ=0.8) *.MODEL DDS D(BV={100*{0.0008*TEMP+0.98}} M=0.36 CJO=23p VJ=0.8) Dbody 3 20 .ENDS BSS123
/datasheets/files/kaleidoscope/cad/visionics_edwinxp140/edwinxp/eds_sbk/fairchld/bss123.sbc |
Kaleidoscope | 06/08/1999 | 0.68 Kb | SBC | bss123.sbc |
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.SUBCKT BSS123 1 2 3 *PHILIPS SEMICONDUCTORS BSS123, 3 *Node 1,NODE 1 *Node 2,NODE 2 *Node 3,NODE 3 * Cgs 2 3 18.8E-12 8E-12 Cgd1 2 4 57.7E-12 7E-12 Cgd2 1 4 4E-12 4E-12 M1 1 2 3 3 MOST1 M2 4 2 1 3 MOST2 D1 3 1 Dbody .MODEL MOST1 NMOS(Level=3 Kp=20.79u W=7.9m L=2u Rs=20m Vto=1.6 Rd=1.515) .MODEL MOST2 NMOS(VTO=-4.64 Kp=20.79u W=7.9m L=2u Rs=20m) .MODEL Dbody D(Is=192.2f N=1.052 Rs=318.2m Cjo=72.35p M=422.8m Vj=494.8m + Bv=100 Ibv=10u Tt=140n) .ENDS BSS123
/datasheets/files/kaleidoscope/cad/visionics_edwinxp140/edwinxp/eds_sbk/philips/bss123.sbc |
Kaleidoscope | 28/06/1999 | 0.45 Kb | SBC | bss123.sbc |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| BSS123T1 | Motorola | N-Channel Enhancement MOSFET - SIPMOPS | |
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| BSS123T/R | Philips Semiconductors / NXP Semiconductors | N-Channel Enhancement MOSFET - SIPMOPS | |
| Diodes, Inc. Part | Type | Industry Part |
| BSS123 Buy | Diodes, Inc. Equivalent | BSS123LT1 Buy |
| BSS123 Buy | Diodes, Inc. Equivalent | BSS123LT1G Buy |
| BSS123 Buy | Diodes, Inc. Closest | BST82 Buy |
| Leshan Radio Company Part | Industry Part |
| NXP Semiconductor / Philips Part | Industry Part | Manufacturer | Type | Comments |
| BSH114 Buy | BSS123 Buy | |||
| BSS123 Buy | BSP108 Buy | Replacement For Discontinued NXP Product | ||
| BSS123 Buy | BSS119 E6327 Buy | |||
| BSS123 Buy | BSS123/A2 Buy | Replacement For Discontinued NXP Product | ||
| BST82 Buy | BSS 123 Buy |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| BSS123LT1G Buy | 02-961-176 Buy | Freescale Semiconductor | Direct |
| BSS123LT1G Buy | 2N7002 Buy | American Microsemiconductor | Close |
| BSS123LT1G Buy | 2N7002,215 Buy | NXP Semiconductors | Close |
| BSS123LT1G Buy | 2N7002-01 Buy | Diodes, Inc. | Close |
| BSS123LT1G Buy | 2N7002A-7 Buy | Diodes, Inc. | Close |
| BSS123LT1G Buy | 2N7002CK Buy | NXP Semiconductors | Close |
| BSS123LT1G Buy | 2N7002CK,215 Buy | NXP Semiconductors | Close |
| BSS123LT1G Buy | 2N7002E Buy | NXP Semiconductors | Close |
| BSS123LT1G Buy | 2N7002E,215 Buy | NXP Semiconductors | Close |
| BSS123LT1G Buy | 2N7002-E3 Buy | Vishay Intertechnology | Close |
| Part | Similar Part | Notes |
| BSS123 Buy | 2SK1589 Buy | |
| BSS123 Buy | BSS119 Buy | |
| BSS123/A Buy | 2SK1589 Buy | |
| BSS123/A Buy | 2SK1591 Buy | |
| BSS123/A Buy | BSS119 Buy |