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BSC025N03LSGATMA1 Infineon Technologies AG Power Field-Effect Transistor, 25A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 visit Digikey Buy

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Part : BSC025N03LS G Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.3587 Price Each : $0.4201
Part : BSC025N03LSGATMA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.4159 Price Each : $0.4459
Part : BSC025N03LSGATMA1 Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : - Best Price : $0.55 Price Each : $0.55
Part : BSC025N03LSGATMA1 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 5,450 Best Price : $0.63 Price Each : $0.63
Part : BSC025N03LS G Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 50 Best Price : - Price Each : -
Part : BSC025N03LSGATMA1 Supplier : Infineon Technologies Manufacturer : RS Components Stock : 4,995 Best Price : £0.3610 Price Each : £0.3740
Part : BSC025N03LSGATMA1 Supplier : Infineon Technologies Manufacturer : TME Electronic Components Stock : 90 Best Price : $0.5123 Price Each : $0.9166
Part : BSC025N03LS G Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 87 Best Price : $0.4040 Price Each : $0.4040
Part : BSC025N03LSGATMA1 Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 5,000 Best Price : $0.4810 Price Each : $0.4810
Part : BSC025N03LSGATMA1 Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 265 Best Price : $0.61 Price Each : $1.4240
Part : BSC025N03LSGATMA1 Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 265 Best Price : £0.38 Price Each : £0.4010
Part : BSC025N03LSG Supplier : Infineon Technologies Manufacturer : Wuhan P&S Stock : 100 Best Price : $0.60 Price Each : $0.84
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BSC025N03LS Datasheet

Part Manufacturer Description PDF Type
BSC025N03LS G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; V<sub>DS</sub> (max): 30.0 V; R<sub>DS (on)</sub> (max) (@10V): 2.5 mOhm; R<sub>DS (on)</sub> (max) (@4.5V): 3.6 mOhm; I<sub>D </sub> (max): 100.0 A; Original

BSC025N03LS

Catalog Datasheet MFG & Type PDF Document Tags

025N03LS

Abstract: BSC025N03LS G OptiMOS®3 Power-MOSFET Features · Fast switching MOSFET for SMPS · Optimized , thermal resistance · Avalanche rated · Pb-free plating; RoHS compliant Type BSC025N03LS G Package PG-TDSON , 2007-07-11 BSC025N03LS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power , page 2 2007-07-11 BSC025N03LS G Parameter Symbol Conditions min. Dynamic characteristics Input , for gate charge parameter definition Rev. 1.2 page 3 2007-07-11 BSC025N03LS G 1 Power
Infineon Technologies
Original
025N03LS J-STD20 JESD22

025N03LS

Abstract: BSC025N03LS BSC025N03LS G OptiMOS®3 Power-MOSFET Product Summary Features V DS 2.5 m ID , Package Marking BSC025N03LS G PG-TDSON-8 025N03LS Maximum ratings, at T j=25 °C, unless , . 1.4 ±20 mJ kV/µs V J-STD20 and JESD22 page 1 2008-10-06 BSC025N03LS G Maximum , See figure 3 for more detailed information page 2 2008-10-06 BSC025N03LS G Parameter , figure 16 for gate charge parameter definition page 3 2008-10-06 BSC025N03LS G 1 Power
Infineon Technologies
Original
025N03 PG-TDSON-8
Abstract: BSC025N03LS G OptiMOSâ"¢3 Power-MOSFET Product Summary Features V DS 30 V â , '¢ Halogen-free according to IEC61249-2-21 Type Package Marking BSC025N03LS G PG-TDSON-8 025N03LS , J-STD20 and JESD22 page 1 2009-10-22 BSC025N03LS G Maximum ratings, at T j=25 ° unless , See figure 3 for more detailed information page 2 2009-10-22 BSC025N03LS G Parameter , BSC025N03LS G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 100 120 Infineon Technologies
Original
Abstract: BSC025N03LS G OptiMOS®3 Power-Transistor Features · Fast switching MOSFET for SMPS · Optimized , thermal resistance · Avalanche rated · Pb-free plating; RoHS compliant Type BSC025N03LS G Package PG-TDSON , page 1 2007-03-02 BSC025N03LS G Maximum ratings, at T j=25 °C, unless otherwise specified , BSC025N03LS G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance , 2007-03-02 BSC025N03LS G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 100 Infineon Technologies
Original

BSC025N03LS G

Abstract: BSC025N03LS BSC025N03LS G OptiMOSTM3 Power-MOSFET Product Summary Features V DS 30 V · , according to IEC61249-2-21 Type Package Marking BSC025N03LS G PG-TDSON-8 025N03LS Maximum , 2009-10-22 BSC025N03LS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power , BSC025N03LS G Parameter Values Symbol Conditions Unit min. typ. max. - 4600 6100 , BSC025N03LS G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS10 V 100 120
Infineon Technologies
Original
Abstract: BSC025N03LS Thick Film 0 Ohm jumper 0603 Rsw 1 Vishay Generic 5% Thick Film 10 Ohms 0603 Analog Devices
Original
ADP1821 MMBTA05 IRLR3110 QSOP-16 ADP1821ARQZ

ICE3B0365J

Abstract: ICE2A765P2 1.6m 100A 63nC BSC020N03LS G 2m 100A 70nC BSC020N03MS G 2m 100A 45nC BSC025N03LS G 2.5m 100A 56nC
Infineon Technologies
Original
ICE3B0365J ICE2A765P2 ICE3BR4765J TDA16888 ICE1PCS02G ICE2PCS01G SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3

3bs02

Abstract: 2bs01 (ON)=7.2m BSC150N03LD G RDS(ON)=15.0m BSC025N03LS G BSZ0902NSI BSC0902NSI RDS(on)=2.8m IPS031N03L G
Infineon Technologies
Original
3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 B152-H8926-G2-X-7600 NB08-1069

PX3544

Abstract: PX7510 BSC025N03LSGINCT-ND BSC025N03MSGINCT-ND BSZ035N03LSGINCT-ND BSC030N03MSGINCT-ND BSC042N03LSGINCT-ND , IPD075N03LGINTR-ND IPD105N03LGINTR-ND BSC016N03MSGINTR-ND BSC020N03MSGINTR-ND BSC025N03LSGINTR-ND , IPD050N03LG IPD075N03LG IPD105N03LG BSC016N03MSG BSC020N03MSG BSC025N03LSG BSC025N03MSG BSZ035N03LSG
Infineon Technologies
Original
PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 TDA21801 B152-H9345-G2-X-7600