BSC010NE2LS IEC61249-2-21 010NE2LS J-STD20 JESD22

OptiMOSTM Power-MOSFET BSC010NE2LS Product Summary Features V DS m 100 A 32 nC Q G(0V.10V) · Superior thermal resistance

Target Datasheet OptiMOSTM Power-MOSFET BSC010NE2LS BSC010NE2LS Product Summary Features V DS m 100 A 32 nC Q G(0V.10V) · Superior thermal resistance 1.0 Q OSS · 100% avalanche tested V ID · Very low on-resistance R DS(on) @ V GS=4.5 V 25 R DS(on),max · Optimized for high performance Buck converter 70 nC · N-channel · Qualified according to JEDEC1) for target applications PG-TDSON-8 · Pb-free lead plating; RoHS compliant · Halogen-free according to IEC61249-2-21 IEC61249-2-21 Type Package Marking BSC010NE2LS BSC010NE2LS PG-TDSON-8 010NE2LS 010NE2LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 100 V GS=10 V, T C=100 °C 100 V GS=4.5 V, T C=25 °C 100 V GS=4.5 V, T C=100 °C Unit 100 V GS=10 V, T A=25 °C, R thJA=50 K/W 2) A 40 Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche current, single pulse 4) I AS T C=25 °C 50 Avalanche energy, single pulse E AS I D=50 A, R GS=25 190 Gate source voltage V GS 1) Rev. 0.4 +20/-16 mJ V J-STD20 J-STD20 and JESD22 JESD22 page 1 2010-02-23 Target Datasheet BSC010NE2LS BSC010NE2LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation P tot Value Symbol Conditions T C=25 °C 96 T A=25 °C, T j, T stg -55 . 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.5 R thJA=50 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. - - 1.3 top - - 20 6 cm2 cooling area2) - - 50 25 - - Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.2 Zero gate voltage drain current I DSS V DS=25 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=25 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=30 A - 1.1 1.3 m V GS=10 V, I D=30 A - 0.8 1.0 - 0.5 - 60 120 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Rev. 0.4 See figure 3 for more detailed information page 2 2010-02-23 Target Datasheet Parameter BSC010NE2LS BSC010NE2LS Values Symbol Conditions Unit min. typ. max. - 5300 - - 1600 - Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=12 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 180 - Turn-on delay time t d(on) - 7.0 - Rise time tr - 5.6 - Turn-off delay time t d(off) - 36 - Fall time tf - 4.4 - Gate to source charge Q gs - 12 - Gate charge at threshold Q g(th) - 8.4 - Gate to drain charge Q gd - 6.9 - Switching charge Q sw - 11 - Gate charge total Qg - 33 - Gate plateau voltage V plateau - 2.4 - Gate charge total Qg V DD=12 V, I D=30 A, V GS=0 to 10 V - 70 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 29 - Output charge Q oss V DD=12 V, V GS=0 V - 32 - - - 87 - - pF 400 V DD=12 V, V GS=10 V, I D=30 A, R G=1.6 ns Gate Charge Characteristics 5) V DD=12 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.79 - Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - tbd 4) 5) Rev. 0.4 T C=25 °C A V nC See figure 13 for more detailed information See figure 16 for gate charge parameter definition page 3 2010-02-23 Target Datasheet 1 Power dissipation 2 Drain current P tot=f(T C) BSC010NE2LS BSC010NE2LS I D=f(T C); V GS10 V 100 80 80 I D [A] 120 100 P tot [W] 120 60 60 40 40 20 20 0 0 0 40 80 120 160 0 40 80 T C [°C] 120 160 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 limited by on-state resistance 1 µs 10 µs 102 100 0.5 0.2 Z thJC [K/W] I D [A] 100 µs 1 ms 101 10 ms DC 0.1 10-1 0.05 0.02 0.01 100 10-1 10-1 10-2 100 101 102 V DS [V] Rev. 0.4 10-3 10-6 single pulse 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2010-02-23 Target Datasheet BSC010NE2LS BSC010NE2LS 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 800 2 10 V 5 V 4.5 V 3.5 V 3.2 V 700 3.5 V 600 1.5 4V 4.5 V R DS(on) [m] 500 I D [A] 4V 400 300 3.2 V 200 3V 5V 7V 1 8V 10 V 0.5 2.8 V 100 0 0 0 1 2 3 0 10 20 V DS [V] 30 40 50 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 400 300 250 320 200 I D [A] g fs [S] 240 150 160 100 150 °C 25 °C 80 50 0 0 0 1 2 3 4 5 Rev. 0.4 0 40 80 120 160 I D [A] V GS [V] page 5 2010-02-23 Target Datasheet BSC010NE2LS BSC010NE2LS 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA Ugs=10V, Id=30 A 3 2.5 2.5 2 V GS(th) [V] R DS(on) [m] 2 1.5 1 1.5 1 typ 0.5 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 10000 Ciss 25 °C 100 150 °C 103 I F [A] C [pF] Coss 1000 10 Crss 102 1 100 0 5 10 15 20 25 Rev. 0.4 0.0 0.5 1.0 1.5 V SD [V] V DS [V] page 6 2010-02-23 Target Datasheet BSC010NE2LS BSC010NE2LS 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 125 °C 12 V 10 25 °C 5V 20 V 100 °C V GS [V] I AV [A] 8 10 6 4 2 1 0 1 10 100 1000 0 10 20 30 40 50 60 70 80 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 28 V GS 27 Qg 26 V BR(DSS) [V] 25 24 V g s(th) 23 22 Q g(th) 21 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 0.4 page 7 2010-02-23 Target Datasheet Package Outline BSC010NE2LS BSC010NE2LS PG-TDSON-8 PG-TDSON-8: Outline Rev. 0.4 page 8 2010-02-23 Target Datasheet BSC010NE2LS BSC010NE2LS Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 0.4 page 9 2010-02-23 Target Datasheet BSC010NE2LS BSC010NE2LS Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 0.4 page 10 2010-02-23