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Part : BS107ARL1G Supplier : ON Semiconductor Manufacturer : Allied Electronics & Automation Stock : - Best Price : $0.1350 Price Each : $0.1890
Part : BS107ARL1 Supplier : ON Semiconductor Manufacturer : Chip One Exchange Stock : 5,230 Best Price : - Price Each : -
Part : BS107ARL1G Supplier : ON Semiconductor Manufacturer : Chip One Exchange Stock : 4,209 Best Price : - Price Each : -
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BS107A Datasheet

Part Manufacturer Description PDF Type
BS107A Motorola TMOS Switching(N-Channel-Enhancement) Original
BS107A On Semiconductor TRANS MOSFET N-CH 200V 0.25A 3TO-92 BOX Original
BS107A On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original
BS107A Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original
BS107A Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original
BS107A Motorola European Master Selection Guide 1986 Scan
BS107A Motorola Switchmode Datasheet Scan
BS107A N/A Shortform Data and Cross References (Misc Datasheets) Scan
BS107A N/A FET Data Book Scan
BS107A N/A Shortform Datasheet & Cross References Data Scan
BS107A On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, MOSFET, N Channel, .25A, 200V, Pkg Style TO92 Scan
BS107AG On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original
BS107AG On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 1000 Original
BS107AMO Philips Semiconductors Transistor Mosfet N-CH 200V 0.15A 3TO-92 AMMOPACK Original
BS107AMO N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
BS107ARL On Semiconductor BS107 - TRANSISTOR 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AA, 3 PIN, FET General Purpose Small Signal Original
BS107ARL1 On Semiconductor Small Signal MOSFET 250 mA, 200 V N-Channel TO-92 Original
BS107ARL1 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Tape and Reel; Qty per Container: 2000 Original
BS107ARL1G On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Tape and Ammunition Box; Qty per Container: 2000 Original
BS107ARL1G On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original
Showing first 20 results.

BS107A

Catalog Datasheet MFG & Type PDF Document Tags

BS107

Abstract: PPAP MANUAL ) 2000/Ammo Pack BS107 BS107AG BS107ARL1 BS107ARL1G *For additional information on our , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 http , VOLTS RDS(on) = 14 W (BS107) RDS(on) = 6.4 W (BS107A) Rating Drain-Source Voltage Gate-Source , YWWG G 3 xxx = BS107 or BS107A A = Assembly Location Y = Year WW = Work Week G = , Shipping TO-92 1000 Units/Box BS107G TO-92 (Pb-Free) 1000 Units/Box BS107A TO
ON Semiconductor
Original
PPAP MANUAL BS107/D

BS107

Abstract: BS107 application Units/Box BS107ARLRM TO­92 2000 Ammo Pack BS107ARLRP TO­92 2000 Ammo Pack BS107ARL1 , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N­Channel TO , (on) = 6.4 (BS107A) N­Channel D G 1. The Power Dissipation of the package may result in a , , 2000 November, 2000 ­ Rev. 2 1 Publication Order Number: BS107/D BS107, BS107A , ) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID = 250 mAdc) rDS(on) OFF CHARACTERISTICS Gate Reverse
ON Semiconductor
Original
BS107 application BS107RL1 BS107RLRA

BS107

Abstract: BS107G BS107 BS107AG BS107ARL1 BS107ARL1G *For additional information on our Pb-Free strategy and , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO , ) = 14 W (BS107) RDS(on) = 6.4 W (BS107A) Rating Drain-Source Voltage Gate-Source Voltage - , xxx = BS107 or BS107A A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package , -92 1000 Units/Box BS107G TO-92 (Pb-Free) 1000 Units/Box BS107A TO-92 1000 Units/Box
ON Semiconductor
Original
mosfet to92

BP317

Abstract: BS107A DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS , Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107A , vertical D-MOS transistor BS107A RATINGS Limiting values in accordance with the Absolute Maximum , transistor BS107A CHARACTERISTICS Tj = 25 °C unless otherwise specified Drain-source breakdown , handbook, halfpage BS107A handbook, halfpage 90 % INPUT 10 % 90 % 10 V 0V ID
Philips Semiconductors
Original
BP317 MBB692 MSB033 MBB076 SCA54

BC107 to92

Abstract: BC107 characteristic ORDERING INFORMATION Device BS107 BS107G BS107RLRA BS107RL1 BS107A BS107AG BS107ARLRM BS107ARLRP BS107ARL1 , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO , (on) = 6.4 W (BS107A) N-Channel Symbol VDS VGS VGSM ID IDM PD TJ, Tstg Value 200 ± 20 ± 30 250 500 , Order Number: BS107/D BS107, BS107A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID =
ON Semiconductor
Original
BC107 to92 BC107 characteristic BC107 to-92 BC107 BRD8011/D
Abstract: BS107A Small Signal MOSFET 250 mA, 200 V, Nâ'Channel TOâ'92 Features â'¢ AECâ'Q101 , '92 CASE 29â'11 STYLE 30 3 A BS107A YWW G G A = Assembly Location Y = Year WW = Work , Device BS107ARL1G Package Shipping TOâ'92 (Pbâ'Free) 2000 / Tape & Reel â' For , â' Rev. 7 1 Publication Order Number: BS107/D BS107A ELECTRICAL CHARACTERISTICS (TA = , 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID = 250 mAdc) rDS(on) â' â' â' â ON Semiconductor
Original
Abstract: BS107A Small Signal MOSFET 250 mAmps, 200 Volts Nâ'Channel TOâ'92 Features http , WW G A BS107A YWW G G = Assembly Location = Year = Work Week = Pbâ'Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BS107ARL1G Package , Publication Order Number: BS107/D BS107A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , Resistance BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = ON Semiconductor
Original

BS107 MOTOROLA

Abstract: BS107A N­Channel - Enhancement BS107 BS107A 1 DRAIN 2 GATE ® 3 SOURCE MAXIMUM RATINGS Rating , BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 , Small­Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 BS107 BS107A RESISTIVE , Characteristic Motorola Small­Signal Transistors, FETs and Diodes Device Data BS107 BS107A ID(on), DRAIN , Motorola Small­Signal Transistors, FETs and Diodes Device Data 3 BS107 BS107A PACKAGE DIMENSIONS
Motorola
Original
BS107 MOTOROLA 226AA

BS107A

Abstract: BS107A A_ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. Features â'¢ Direct , 1988 411 1^53^31 0(]3b000 2b3 This Material Copyrighted By Its Respective Manufacturer BS107A , Copyrighted By Its Respective Manufacturer N-channel enhancement mode vertical D-MOS transistor BS107A 7J~L
-
OCR Scan
7ZSS773

BS107

Abstract: BS107A / Box BS107ARLRM TO-92 2000 Ammo Pack BS107ARLRP TO-92 2000 Ammo Pack BS107ARL1 TO-92 BS107AG BS107ARL1G 2000 / Tape & Reel TO-92 (Pb-Free) For information on tape , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO , ) RDS(on) = 6.4 W (BS107A) N-Channel MAXIMUM RATINGS Rating Drain -Source Voltage Gate-Source , 1 Publication Order Number: BS107/D BS107, BS107A ELECTRICAL CHARACTERISTICS (TA = 25
ON Semiconductor
Original

BC107 characteristic

Abstract: BC107 to92 Device BS107 BS107G BS107RLRA BS107RL1 BS107A BS107AG BS107ARLRM BS107ARLRP BS107ARL1 BS107ARL1G Package , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO , ) RDS(on) = 6.4 W (BS107A) N-Channel Symbol VDS VGS VGSM ID IDM PD TJ, Tstg Value 200 ± 20 ± 30 250 500 , Order Number: BS107/D BS107, BS107A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID =
ON Semiconductor
Original

BS107

Abstract: BS107A BS107A Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features http://onsemi.com , 2 TO-92 CASE 29-11 STYLE 30 3 A Y WW G A BS107A YWW G G = Assembly Location , INFORMATION Device BS107ARL1G Package Shipping TO-92 (Pb-Free) 2000 / Tape & Reel For , Rev. 6 1 Publication Order Number: BS107/D BS107A ELECTRICAL CHARACTERISTICS (TA = 25 , Resistance BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID =
ON Semiconductor
Original

TRANSISTOR SL 100

Abstract: bs107a BS107A max. max. max. max. typ. max. min. typ. 200 V 20 V 250 mA 0.6 W 4.5 Q 2 6.4 £ 200 mS 350 mS , BS107A max. max. max. max. max. 200 V 250 mA 500 mA 0.6 W CM o > Id Id m P.crt T stg , transistor BS107A Fig.3 Input and output waveforms. April 1995 69
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OCR Scan
TRANSISTOR SL 100
Abstract: BS107A y V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers. Features â , BS107A J V RATINGS Lim iting values in accordance w ith the Absolute Maximum System (I EC 134 , April 1995 BS107A N-channel enhancement mode vertical O-MOS transistor J Fig.2 Switching -
OCR Scan
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N -C hannel â'" Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Symbol Value Unit Vd S 200 Vdc Vg s , ) (Vq s = 10 Vdc, Ip = 200 mAdc) BS107A (Vq s = 10 Vdc) (ID = 100 mAdc) (ID = 250 mAdc) rDS(on , ?5 S S OO'iBb?!* Motorola S m all-S ignal Transistors, FETs and Diodes Device Data BS107 BS107A , BS107A V o s , DRAIN-SO URC E VOLTAGE (VOLTS) Figure 7. Saturation Characteristic t>3b?2S5 -
OCR Scan
Abstract: BS107A J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers , are available. December 1988 0D3b000 2b3 BS107A y v RATINGS Limiting values in accordance , ITT BS107A N-channel enhancement mode vertical D-MOS transistor 7 V Fig.2 Switching times -
OCR Scan

BS107A

Abstract: BS107 MOTOROLA MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS107/D TM OS Switching N-Channel - Enhancement 1 DRAIN BS107 BS107A 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Gate-Source Voltage - Continuous - Non-repetitive (tp < 50 us) Drain Current Continuous , Resistance BS107 (VGS = 2.6 Vdc, Id = 20 mAdc) ( V q s = 10 Vdc, lD = 200 mAdc) BS107A (Vq s = 10 Vdc) (Iq = , -© Motorola, Inc. 1997 ( M ) MOTOROLA ^ - BS107 BS107A RESISTIVE SWITCHING +25 V O
-
OCR Scan
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N -Channel - Enhancement 1 DRAIN BS107 BS107A G ATE ' 3 SOURCE M AXIM UM R A T IN G S Rating D r a in - S o u r c e V olta g e G a t e -S o u r c e V oltag e - C o n tin u o u s - N o n -re p e titiv e (tp < 50 jxs) D rain , Device Data BS107 BS107A RESISTIVE SWITCHING +25 V TO SAM PLIN G S C O P E S23 PU LS E GEN , , FETs and Diodes Device Data 4-9 BS107 BS107A V o s , D R A IN -S O U R C E V O LT A G E -
OCR Scan

lt 2904

Abstract: BS107 MOTOROLA TMOS SWITCHING N-CHANNEL - ENHANCEM ENT BS107A Is a M otorola designated preferred device. (1) T , ) (V q s = 10 V, lD = 200 mA} BS107A {VGS = 10 Vdc) { I D = 100 mA) (I d = 250 mA) SMALL-SIGNAL
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OCR Scan
lt 2904
Abstract: BS107A _ FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed fo r use as line current interrupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers. Features · Direct interface to C-MOS, T T L , etc. · High-speed switching · No second breakdown Q UICK REFERENCE D A T A Drain-source -
OCR Scan

2904S

Abstract: DS130 ) BS107A (V q ( lD ( lD s - - 28 14 6 .0 6 .4 = 10 V d c ) = 100 m A ) = 250 m A ) 4 .5 4
-
OCR Scan
2904S DS130
Showing first 20 results.