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BS107P Diodes Incorporated Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 visit Digikey Buy
BBS-107-G-C Samtec Inc Board Connector, 7 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle, ROHS COMPLIANT visit Digikey Buy
BBS-107-T-B Samtec Inc Board Connector, 7 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle, ROHS COMPLIANT visit Digikey Buy
BBS-107-G-G Samtec Inc Board Connector, 7 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle, ROHS COMPLIANT visit Digikey Buy
BBS-107-G-D Samtec Inc Board Connector, 7 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle, ROHS COMPLIANT visit Digikey Buy
BBS-107-G-A Samtec Inc Board Connector, 7 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle, ROHS COMPLIANT visit Digikey Buy

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BS107 Datasheet

Part Manufacturer Description PDF Type
BS107 Diodes N-CHANNEL ENHANCEMENT MODE TRANSISTOR Original
BS107 Infineon Technologies TRANS MOSFET N-CH 200V 0.13A 3TO-92 Original
BS107 Motorola TMOS Switching(N-Channel-Enhancement) Original
BS107 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original
BS107 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original
BS107 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original
BS107 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original
BS107 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original
BS107 Philips Semiconductors UHF power transistor Original
BS107 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original
BS107 Siemens SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) Original
BS107 Siemens Original
BS107 Siliconix N-Channel Enhancement-Mode MOSFET Transistors Original
BS107 Temic Semiconductors N-channel Enhancement-mode Mos Transistors Original
BS107 Toshiba Power MOSFETs Cross Reference Guide Original
BS107 Vishay Telefunken TRANS MOSFET N-CH 200V 0.12A 3TO-92-18RM Original
BS107 ITT Semiconductors VMOS Transistor Scan
BS107 Motorola European Master Selection Guide 1986 Scan
BS107 Motorola Switchmode Datasheet Scan
BS107 N/A Semiconductor Master Cross Reference Guide Scan
Showing first 20 results.

BS107

Catalog Datasheet MFG & Type PDF Document Tags

BS107

Abstract: PPAP MANUAL ) 2000/Ammo Pack BS107 BS107AG BS107ARL1 BS107ARL1G *For additional information on our , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 http , VOLTS RDS(on) = 14 W (BS107) RDS(on) = 6.4 W (BS107A) Rating Drain-Source Voltage Gate-Source , YWWG G 3 xxx = BS107 or BS107A A = Assembly Location Y = Year WW = Work Week G = , Shipping TO-92 1000 Units/Box BS107G TO-92 (Pb-Free) 1000 Units/Box BS107A TO
ON Semiconductor
Original
PPAP MANUAL BS107/D

BS107

Abstract: BS107G BS107 BS107AG BS107ARL1 BS107ARL1G *For additional information on our Pb-Free strategy and , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO , ) = 14 W (BS107) RDS(on) = 6.4 W (BS107A) Rating Drain-Source Voltage Gate-Source Voltage - , xxx = BS107 or BS107A A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package , -92 1000 Units/Box BS107G TO-92 (Pb-Free) 1000 Units/Box BS107A TO-92 1000 Units/Box
ON Semiconductor
Original
mosfet to92

TO-92-18RM

Abstract: BS107 VN2010L/BS107 Siliconix NChannel EnhancementMode MOS Transistors Product Summary Part Number V(BR)DSS Min (V) VN2010L rDS(on) Max (W) BS107 ID (A) 10 @ VGS = 4.5 V 0.8 to , View VN2010L BS107 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol VN2010L BS107 DrainSource Voltage VDS 200 200 GateSource Voltage VGS , junction temperature. P-38283-Rev. B (08/15/94) 1 VN2010L/BS107 Siliconix Specificationsa
Temic Semiconductors
Original
TO-92-18RM TO-92-18R VN2010L/BS107 P-38283--R

equivalent of BS107

Abstract: BS107 VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V(BR)DSS Min (V) ID (A) 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 200 BS107 VGS(th) (V) 10 @ VGS , Top View VN2010L BS107 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol VN2010L BS107 Drain-Source Voltage VDS 200 200 Gate-Source Voltage VGS , -Aug-94 1 VN2010L/BS107 Specificationsa Limits VN2010L Parameter Symbol Test Conditions
Temic Semiconductors
Original
equivalent of BS107 BS107 application
Abstract: Temic siiicon ix_VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number VN2010L BS107 V(BR)DSS Mín (V) r DS(on) Max (Q) VGS(th) (V , -18 L e a d F orm ) Top View V N 2010L Top View BS107 Absolute Maximum Ratings (Ta = 25 , . 8 0.8 0.32 156 - 5 5 to 150 BS107 200 Unit V ±25 0.12 A lffCE 0.5 W 250 ° c /w °c , -38283- Rev. B (08/15/94) 1 Tem ic VN2010L/BS107 Specifications3 Limits V N 2010L Siliconix -
OCR Scan
P-38283--

VN2010L

Abstract: BS107 VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR)DSS Min (V) ID (A) 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 200 BS107 VGS(th) (V) 10 @ , Top View VN2010L BS107 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol VN2010L BS107 Drain-Source Voltage VDS 200 200 Gate-Source Voltage VGS , -Aug-94 1 VN2010L/BS107 Specificationsa Limits VN2010L Parameter Symbol Test Conditions
Siliconix
Original

BS107

Abstract: BS107 application BS107RLRA TO­92 2000 Tape & Reel BS107RL1 TO­92 2000 Tape & Reel BS107A TO­92 1000 Units/Box BS107ARLRM TO­92 2000 Ammo Pack BS107ARLRP TO­92 2000 Ammo Pack BS107ARL1 , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N­Channel TO , , 2000 November, 2000 ­ Rev. 2 1 Publication Order Number: BS107/D BS107, BS107A , . Switching Test Circuit http://onsemi.com 2 BS107, BS107A 200 180 VGS = 0 V 160 5.0 VGS
ON Semiconductor
Original

BS107

Abstract: MBB692 DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS , PIN BS107 Fig.1 Simplified outline and symbol. 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 LIMITING VALUES In , transistor BS107 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER , handbook, halfpage BS107 handbook, halfpage 90 % INPUT 10 % 90 % 10 V OUTPUT ID
Philips Semiconductors
Original
MBB692 transistor bs107 MAM146 SCA54

VN2010L

Abstract: S0427 VN2010L/BS107 Vishay Siliconix N-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VN2010L BS107 200 28 @ V gs = 2.8 V 0.8 to 3 0.12 V (B R )D S S M i n ( V ) r D S (o n) M a x ( Q ) 10 @ V , VN2010L Top View BS107 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter , 200 ±30 0.19 0.12 0.8 0.8 0.32 156 - 5 5 to 150 BS107 200 Unit V ±25 0.12 A dm 0.5 W 250 °C/W °C Tj' Ts tg 11-84 VN2010L/BS107 Vishay Siliconix SPECIFICATIONS (T a - 25
-
OCR Scan
S0427 siliconix marking code S-04279-- VNDQ20 7Q215 S-0427

BC107 to92

Abstract: BC107 characteristic , DRAIN-SOURCE VOLTAGE (VOLTS) Figure 7. Saturation Characteristic http://onsemi.com 36 BS107, BS107A ORDERING INFORMATION Device BS107 BS107G BS107RLRA BS107RL1 BS107A BS107AG BS107ARLRM BS107ARLRP BS107ARL1 , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO , Order Number: BS107/D BS107, BS107A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , ://onsemi.com 35 BS107, BS107A 10 VDS , DRAIN-SOURCE VOLTAGE (VOLTS) 5.0 2.0 1.0 0.5 0.2 0.1 -55 -35 -15
ON Semiconductor
Original
BC107 to92 BC107 characteristic BC107 to-92 BC107 BRD8011/D

ha1100

Abstract: UG-94 Temic S e m i c o n d u c t o r s VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V N2010L 200 BS107 28 @ V o s = 2.8 V 0.8 to 3 0.12 V(BR)DSS Min (V , Form) Top View VN2U10L Top View BS107 Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise , VGS VN2Ö10L 200 ±30 0.19 0.12 0.8 0.8 0.32 156 -5 5 to 150 BS107 200 Unit V ±25 0.12 A , VN2010L/BS107 Specifications3 Temic S e m i c o n d u c t o r s Limits VN2010L BS107 Parameter
-
OCR Scan
ha1100 UG-94
Abstract: VN2010L/BS107 Vishay Siliconix N-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VN2010L BS107 200 V(BR)DSS Min (V) rDS(on) Max (W) 10 @ VGS = 4.5 V 28 @ VGS = 2.8 V VGS(th) (V , G 2 G 2 D 3 S 3 Top View VN2010L Top View BS107 ABSOLUTE MAXIMUM , to 150 BS107 200 "25 0.12 Unit V A 0.5 W 250 _C/W _C 11-1 VN2010L/BS107 Vishay , 100 A 220 1.2 200 0.8 1.8 "10 "10 1 0.03 mA nA 200 0.8 3 V BS107 Min Max Unit Symbol Test Vishay Siliconix
Original
S-04279--R

MAM146

Abstract: BP317 DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS , PIN BS107 Fig.1 Simplified outline and symbol. 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 LIMITING VALUES In , transistor BS107 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER , Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 Fig
Philips Semiconductors
Original
BP317 bs107 philips

BS107

Abstract: VN2010L VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR)DSS Min (V) ID (A) 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 200 BS107 VGS(th) (V) 10 @ , Top View VN2010L BS107 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol VN2010L BS107 Drain-Source Voltage VDS 200 200 Gate-Source Voltage VGS , -Aug-94 1 VN2010L/BS107 Specificationsa Limits VN2010L Parameter Symbol Test Conditions
Temic Semiconductors
Original

bs107 transistor

Abstract: cr 406 transistor BS107 N-channel enhancement mode vertical D-MOS transistor FEATURES â'¢ Direct interface to C-MOS , BS107 D-MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER , D-MOS transistor BS107 I r 10 V 1-] 0 J L 0 . (j5 >1 'D 5012 RT 8 V 7ZM773.1 Fig.2 Switching , N-channel enhancement mode vertical D-MOS transistor BS107 "DS (on) in) imi 1 VGS = 3 V , Preliminary specification N -channel enhancement mode vertical BS107 D-MOS transistor UCB700 Tomb C°C
-
OCR Scan
bs107 transistor cr 406 transistor transistor 406 specification MBB073

equivalent of BS107

Abstract: BS107 application VN2010L/BS107 Vishay Siliconix N-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number , 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low , Top View Top View VN2010L Device Marking Front View BS107 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol VN2010L BS107 Drain-Source Voltage , Number: 70215 S-04279-Rev. C, 16-Jul-01 www.vishay.com 11-1 VN2010L/BS107 Vishay Siliconix
Vishay Siliconix
Original

BS107

Abstract: BS107A BS107RL1 TO-92 2000 / Tape & Reel BS107A TO-92 BS107G TO-92 (Pb-Free) 1000 Units / Box BS107ARLRM TO-92 2000 Ammo Pack BS107ARLRP TO-92 2000 Ammo Pack BS107ARL1 , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO , 1 Publication Order Number: BS107/D BS107, BS107A ELECTRICAL CHARACTERISTICS (TA = 25 , Resistance BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID =
ON Semiconductor
Original

BC107 characteristic

Abstract: BC107 to92 ) Figure 7. Saturation Characteristic http://onsemi.com 3 BS107, BS107A ORDERING INFORMATION Device BS107 BS107G BS107RLRA BS107RL1 BS107A BS107AG BS107ARLRM BS107ARLRP BS107ARL1 BS107ARL1G Package , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO , Order Number: BS107/D BS107, BS107A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , BS107, BS107A 10 VDS , DRAIN-SOURCE VOLTAGE (VOLTS) 200 180 5.0 2.0 1.0 100 mA 250 mA C, CAPACITANCE
ON Semiconductor
Original
Abstract: transistor BS107 QUICK REFERENCE DATA FEATURES â'¢ Direct interface to C-MOS, TTL, etc â , BS107 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). PARAMETER SYMBOL , N-channel enhancement mode vertical D-MOS transistor BS107 CHARACTERISTICS Tj = 25 °C unless , specification Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor BS107 Fig , transistor 1 10 100 BS107 1000 ID (mA) Vd s Fig.6 Typical on-resistance as a function -
OCR Scan
CB700

BS-107C

Abstract: Tem ic Siliconix VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number VN2010L BS107 V(BR,)DSS Min (V) 200 rDS(on) Max (Ö) 10 @ VGS = 4.5 V 28 @ V GS = 2.8 V , -92-18RM (TO-18 Lead Form) Tbp View VN2010L Top View BS107 Absolute Maximum Ratings (Ta = 25°C Unless , junction temperature. P-38283-Rev. B (08/15/94) 1 1 -6 7 L ow Power MOS Tem ic VN2010L/BS107 , Drain Current® iD(on) Siliconix BS107 M in M ax U n it Sym bol T e st C o n d itio n s
-
OCR Scan
BS-107C 08A5/94

BS107A

Abstract: BS107 MOTOROLA MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS107/D TM OS Switching N-Channel - Enhancement 1 DRAIN BS107 BS107A 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit , Resistance BS107 (VGS = 2.6 Vdc, Id = 20 mAdc) ( V q s = 10 Vdc, lD = 200 mAdc) BS107A (Vq s = 10 Vdc) (Iq = , -© Motorola, Inc. 1997 ( M ) MOTOROLA ^ - BS107 BS107A RESISTIVE SWITCHING +25 V O , 0 BS107/D
-
OCR Scan
BS107 MOTOROLA

transistor BS 107

Abstract: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR)DSS Min (V) ID (A) 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 200 BS107 VGS(th) (V) 10 @ , Top View VN2010L BS107 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol VN2010L BS107 Drain-Source Voltage VDS 200 200 Gate-Source Voltage VGS , -Aug-94 1 VN2010L/BS107 Specificationsa Limits VN2010L Parameter Symbol Test Conditions
-
OCR Scan
transistor BS 107 Q67000-S078 Q67000-S060

BS107

Abstract: MARKING BS BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features http://onsemi.com · Pb-Free Package is Available* 250 mA, 200 V RDS(on) = 14 W (BS107 , BS 107 YWW TO-92 CASE 29 STYLE 30 1 2 3 BS107 = Specific Device Code Y = Year WW = , 1 Publication Order Number: BS107/D BS107, BS107A ELECTRICAL CHARACTERISTICS (TA = 25 , Resistance BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID =
-
OCR Scan
MARKING BS VPT05 E6288 30-----------------S
Showing first 20 results.