BR805 BR810 BR801 BR802 BR804 BR806 BR808 BR1005 BR101 BR102 BR104 BR106 BR108

RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION BR810 SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts

BR805 BR805 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION BR810 BR810 SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes FEATURES * * * * Surge overloab rating: 125 amperes peak Low forward voltage drop Mounting position: Any Mounting: Hole thru for # 6 screw BR-8 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) SYMBOL BR805 BR805 BR801 BR801 BR802 BR802 BR804 BR804 BR806 BR806 BR808 BR808 BR810 BR810 UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts VDC 50 100 200 400 600 800 1000 Volts RATINGS Maximum DC Blocking Voltage o Maximum Average Forward Tc = 50 C Rectified Output Current at: Tc = 100 oC 8.0 IO Amps 6.0 o T A = 50 C 6.0 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 125 -55 to + 125 0 C T STG Storage Temperature Range I FSM TJ Operating Temperature Range -55 to + 150 0 C Amps ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS SYMBOL Maximum Forward Voltage Drop per element at 4.0A DC Maximum Reverse Current at Rated @T A = 25 oC DC Blocking Voltage per element @T C = 100 oC VF BR1005 BR1005 BR101 BR101 BR102 BR102 BR104 BR104 BR106 BR106 BR108 BR108 BR1010 BR1010 UNITS 1.1 Volts 10 uAmps 0.2 mAmps IR 1998-8 Back RECTRON