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LTC2655CGN-L12#PBF Linear Technology LTC2655 - Quad I<sup>2</sup>C 16-/12-Bit Rail-to-Rail DACs with 10ppm/°C Max Reference; Package: SSOP; Pins: 16; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC2655IUF-H12#PBF Linear Technology LTC2655 - Quad I<sup>2</sup>C 16-/12-Bit Rail-to-Rail DACs with 10ppm/°C Max Reference; Package: QFN; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC2655BCGN-L16#TRPBF Linear Technology LTC2655 - Quad I<sup>2</sup>C 16-/12-Bit Rail-to-Rail DACs with 10ppm/°C Max Reference; Package: SSOP; Pins: 16; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC2655BCUF-H16#TRPBF Linear Technology LTC2655 - Quad I<sup>2</sup>C 16-/12-Bit Rail-to-Rail DACs with 10ppm/°C Max Reference; Package: QFN; Pins: 20; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC2655CGN-H12#TRPBF Linear Technology LTC2655 - Quad I<sup>2</sup>C 16-/12-Bit Rail-to-Rail DACs with 10ppm/°C Max Reference; Package: SSOP; Pins: 16; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC2655CUF-L12#TRPBF Linear Technology LTC2655 - Quad I<sup>2</sup>C 16-/12-Bit Rail-to-Rail DACs with 10ppm/°C Max Reference; Package: QFN; Pins: 20; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

BR C2655 Transistor

Catalog Datasheet MFG & Type PDF Document Tags

C2655 NPN Transistor

Abstract: C2655 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm · · · · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed , IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage , (1) classification O: 70 to 140, Y: 120 to 240 Marking C2655 Part No. (or abbreviation
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2SA1020 C2655 NPN Transistor toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics

C2655 NPN Transistor

Abstract: transistor C2655 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · High collector power dissipation: PC = 900 mW · , VEB = 5 V, IC = 0 1.0 A V (BR) CEO IC = 10 mA, IB = 0 50 V VCE = , C2655 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates
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C2655 transistor c2655 equivalent 2SC2655 Silicon NPN Epitaxial Type C2655 Y 06 C2655 Y 40 C2655 BR

C2655 NPN Transistor

Abstract: transistor C2655 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications · Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · High collector power dissipation: PC = 900 mW · , IEBO VEB = 5 V, IC = 0 1.0 µA V (BR) CEO IC = 10 mA, IB = 0 50 V , Marking C2655 Part No. (or abbreviation code) Lot No. Characteristics indicator A line
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C2655(Y)-T BR C2655 Transistor c2655 datasheet RX-2-G

C2655 NPN Transistor

Abstract: C2655 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · High collector power dissipation: PC = 900 mW · , VEB = 5 V, IC = 0 1.0 A V (BR) CEO IC = 10 mA, IB = 0 50 V VCE = , Marking C2655 Part No. (or abbreviation code) Lot No. Characteristics indicator Note 3
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